• Journal of the Korean institute of surface engineering
• /
• v.55 no.4
• /
• pp.202-214
• /
• 2022

Internal connections between device, package and external terminals for connecting packaging and printed circuit board are normally manufactured by electroless Ni-P plating followed by immersion Au plating (ENIG process) to ensure the connection reliability. In this study, a new non-cyanide-based immersion and electroless Au plating solutions using thiomalic acid as a complexing agent and aminoethanethiol as a reducing agent was investigated on different underlayer electroless Ni-P plating layers. As a result, it was confirmed that the deposition behavior and film properties of electroless Au plating are affected by grain size and impurity of the electroless Ni-P film, which is used as the plating underlayer. Au plating on the electroless Ni-P plating film with a dense surface structure showed the highest bonding strength. In addition, the electroless Au plating film on the Ni-P plating film has a smaller particle size exhibited higher bonding strength than that on the large particle size.

• Journal of the Korean Chemical Society
• /
• v.58 no.6
• /
• pp.513-516
• /
• 2014

We measure the conductance of a 4,4'-diaminobiphenyl formed with Ni electrodes using a scanning tunneling microscope-based break-junction technique. For comparison, we use Au or Ag electrodes to form a metal-molecular junction. For molecules that conduct through the highest occupied molecular orbital, junctions formed with Ni show similar conductance as Au and are more conductive than those formed with Ag, consistent with the higher work function for Ni or Au. Furthermore, we observe that the measured molecular junction length that is formed with the Ni or Au electrodes was shorter than that formed with the Ag electrodes. These observations are attributed to a larger gap distance of the Ni or Au electrodes compared to that of the Ag electrodes after the metal contact ruptures. Since our work allows us to measure the conductance of a molecule formed with various electrodes, it should be relevant to molecular electronics with versatile materials.

• Journal of the Microelectronics and Packaging Society
• /
• v.10 no.2
• /
• pp.61-67
• /
• 2003

The interfacial reaction between ultra-small 58Bi-42Sn solder and Au/Ni/Ti under bump metallurgy (UBM) for ultra-fine flip chip application was investigated. The ultra-small 58Bi-42Sn solder bump, about $46{\mu}m$ in diameter, was fabricated by using the lift-off method and reflowed using the rapid thermal annealing (RTA) system. The intermetallic compounds were characterized using a secondary electron microscopy (SEM), an energy dispersive spectroscopy (EDS), and an x-ray diffractometer (XRD). The faceted and polygonal intermetallic compounds were found in the Bi-Sn solder bumps on $Au(0.1{\mu}m)/Ni/Ti$ UBM and they were indentified as $(Au_xBi_yNi_{1-x-y})Sn_2$ Phase. The intermetallic compounds grown from the $Au(0.1{\mu}m)/Ni/Ti$ UBMinterface were dispersed in the solder bump.

• Journal of the Korean Vacuum Society
• /
• v.14 no.3
• /
• pp.147-152
• /
• 2005

The structural evolution of $Ni(400\;\AA)/Au(400\;\AA)$ films on p-type GaN during thermal oxidation in ai. was investigated by in situ x-ray scattering experiments. These results indicate that Ni layer and Au layer intermix during thermal oxidation. Au-rich solid solutions containing the different amount of Ni atoms are formed during oxidation. The Ni atoms in Au-rich solid solution out-diffuse as the oxidation proceeds resulting in the formation of NiO(111) phase. Despite of the complete oxidation at $650^{\circ}C$, the position of bulk Au(111) diffraction profile indicates that small amount of Wi atoms are still incorporated in the Au phase.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1998.11a
• /
• pp.151-151
• /
• 1998

• Korean Journal of Crystallography
• /
• v.14 no.2
• /
• pp.105-109
• /
• 2003

Electrical properties of Ni/Au/p-GaN and optical properties of epitaxial GaN MQW LED on sapphire were characterized. At 20 mA forward bias, GaN MQW emitted in the blue at 470 nm. Current-voltage (I-V) characteristics were decreased linearly with the annealing temperature. The resistivity of Ni/Au contacts was found by TLM measurements to be of device quality (2×10/sup -1/Ωㆍcm).

• Proceedings of the IEEK Conference
• /
• 2000.06b
• /
• pp.310-313
• /
• 2000

In this study, the Au/Ni and Au/Ni/Si/Ni layers prepared by electron beam evaporation were used to form ohmic contacts on p-type GaN. Before rapid thermal annealing, the current-voltage(I-V) characteristic of Au/Ni and Au/Ni/Si/Ni contact on p-type GaN film shows non-ohmic behavior. A Specific contact resistance as 3.4$\times$10$^{-4}$ Ω-$\textrm{cm}^2$ was obtained after 45$0^{\circ}C$-RTA. The Schottky barrier height reduction may be attributed to the presence of Ga-Ni and Ga-Au compounds, such as Ga$_4$Ni$_3$, Ga$_4$Ni$_3$, and GaAu$_2$ at the metal - semiconductor interface. The mixing behaviors of both Ni and Au have been studied by using X-ray photoelectron spectroscopy. In addition, X-ray diffraction measurements indicate that the Ni$_3$N, NiGa$_4$, Ni$_2$Si, and Ni$_3$Si$_2$ Compounds were formed at the metal-semiconductor interface.

• Membrane Journal
• /
• v.13 no.1
• /
• pp.9-19
• /
• 2003

Membrane process was investigated to recover process water and valuable gold from washing water of electroless PCB plating processes. The filtration experiments were carried out using not only a RO membrane test cell to determine suitable membrane for washing water but also spiral wound membrane modules of nanofiltration and reverse osmosis for scale-up. At first, RO-TL(tap water, low pressure), RO-BL(brackish water, low pressure) and RO-normal(for water purifier) sheet membranes made by Saehan Co. were tested, and the performance of RO-TL membrane showed most suitable f3r recovery of soft etching, catalyst and Ni washing waters. As a result of RO test cell, the experiments for scale-up were carried out using RO-TL modules far water purifier at 7bar and $25^{\circ}C $The permeate flux fur Au washing water was about 30 LMH, but Au rejection was less than 80%. The permeate fluxes for Pd, Ni and soft etching washing water were about 22, 17 and 10 LMH, respectively. The Pd, Ni and Cu rejections showed more than 85, 97 and 98% respectively. The nanofiltration module for water purifier was introduced to recover Au selectively from Au, Ni and Cu ions in Au washing water. Most of Ni and Cu ions in the feed washing water were removed, and only Au ion was existed 81.9% in the permeate. Furthermore, Au ion in the permeate was concentrated and recovered by RO-TL membrane module. Finally, Au was also able to recover effectively by using 4 inch diameter spiral wound modules of NF and RO-TL membranes, in series.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2002.05a
• /
• pp.183-188
• /
• 2002

With the contact pad consisted of $0.5{\mu}{\textrm}{m}$ $Au/5{\mu}{\textrm}{m}$ Ni/Cu layers on a conventional ball grid array(BGA) substrate, metallurgical reaction properties between the pad and In-15(wt.%)Pb-5Ag solder alloy were studied after reflow and solid aging. In as-reflow condition, thin AuIn$_2$or Ni$_{28}$In$_{72}$ intermetallic layer was formed at the solder/pad interface according to reflow time. Dissolution of the Au layer into the molten solder was remarkably limited in comparison with eutectic Sn-37Pb alloy. After solid aging of 300 hrs, thickness of In-Ni layer increased to about $2{\mu}{\textrm}{m}$ in the both as-reflow case. It was observed that In atoms diffuse through the AuIn$_2$phase to react with underlaying Ni layer. The metallurgical reaction properties between In-l5Pb-7Ag alloy and Au/Ni surface finish were analysed to result in suppression of Au-embrittlement in the solder joints.

• Journal of the Korean Vacuum Society
• /
• v.1 no.1
• /
• pp.106-114
• /
• 1992

Abstract-Quantitative surface analysis of Co-Ni and Au-Cu alloys by XPS and SIMS was studied. For Co-Ni alloy, quantitative XPS analysis could be done within 1-2% relative error with pure element standards without any correction. For Au-Cu, quantitative XPS analysis was not possible without any correction. But it could be done with standard alloys of various composition within 1-2% relative error. Without standard alloys, Au-Cu alloys could be analyzed by XPS within 10% relative error with pure element standards. For SIMS analysis of Co-Ni alloys, the relative secondary ion yields of Co+/Nit has linear relation with ratio of each composition so that quantitative SIMS analysis was possible for Co-Ni alloys. Preliminary results of XPS round robin test of VAMAS-SCA Japan Project are given.