• Journal of the Earthquake Engineering Society of Korea
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• v.25 no.5
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• pp.191-199
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• 2021

In seismic design, hollow section concrete columns offer advantages by reducing the weight and seismic mass compared to concrete section RC bridge columns. However, the flexure-shear behavior and spirals strain of hollow section concrete columns are not well-understood. Octagonal RC bridge columns of a small-scale model were tested under cyclic lateral load with constant axial load. The volumetric ratio of the transverse spiral hoop of all specimens is 0.00206. The test results showed that the structural performance of the hollow specimen, such as the initial crack pattern, initial stiffness, and diagonal crack pattern, was comparable to that of the solid specimen. However, the lateral strength and ultimate displacement of the hollow specimen noticeably decreased after the drift ratio of 3%. The columns showed flexure-shear failure at the final stage. Analytical and experimental investigations are presented in this study to understand a correlation confinement steel ratio with neutral axis and a correlation between the strain of spirals and the shear resistance capacity of steel in hollow and solid section concrete columns. Furthermore, shear strength components (V_c, V_s·, V_p) and concrete stress were investigated.

• Nuclear Engineering and Technology
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• v.54 no.1
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• pp.357-373
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• 2022

The high-temperature gas-cooled reactor pebble-bed module project is the first commercial Generation-IV NPP(Nuclear Power Plant) in China. A new joint is used for the vertical support of RPV(Reactor Pressure Vessel). The steel corbel is integrally embedded into the reactor-cabin wall through eight asymmetrically arranged pre-stressed high-strength bolts, achieving the different path transmission of shear force and moment. The vertical monotonic loading test of two specimens is conducted. The results show that the failure mode of the joint is bolt fracture. There is no prominent yield stage in the whole loading process. The stress of bolts is linearly distributed along the height of corbel at initial loading. As the load increases, the height of neutral axis of bolts gradually decreases. The upper and lower edges of the wall opening contact the corbel plate to restrict the rotation of the corbel. During the loading, the pre-stress of some bolts decreases. The increase of the pre-stress strength ratio of bolts has no noticeable effect on the structure stiffness, but it reduces the ultimate bearing capacity of the joint. A simplified calculation model for the elastic stage of the joint is established, and the estimation results are in good agreement with the experimental results.

• Steel and Composite Structures
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• v.41 no.6
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• pp.787-803
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• 2021

The size-dependent nonlinear thermomechanical vibration analysis of pre- and post-buckled tapered two-directional functionally graded (2D-FG) microbeams is presented in this study. In the context of the modified couple stress theory, the formulations are derived based on the parabolic shear deformation beam theory and von Karman nonlinear strains. Different thermomechanical material properties are assumed to be temperature-dependent and smoothly vary in both length and thickness directions using the power law and the physical neutral axis concept is employed. The nonlinear governing equations are derived using the Hamilton principle and the resulting variable coefficient equations of motion are solved using the differential quadrature method (DQM) and iterative Newton's method for clamped-clamped and simply supported boundary conditions. Comparison studies are presented to validate the derived model and solution procedure. The impacts of induced thermal moments, temperature power index, two gradient indices, nonuniform cross-section, and microstructure length scale parameter on the frequency-temperature configurations are explored for both clamped and simply supported microbeams.

• Progress in Superconductivity and Cryogenics
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• v.8 no.3
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• pp.23-26
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• 2006

For mechanical and electrical stability and environment protection. Cu and stainless steel stabilizers are laminated to a Ag layer to produce a composite neutral-axis(N-A) architecture in which the YBCO layer is centered between the oxide buffered metallic substrate and stabilizer strip lamination. This architecture allows the wire to meet operational requirements including stresses at cryogenic temperature. winding tensions as well as mechanical bending requirements including thermal and electrical stability under fault current conditions. We have experimentally studied mechanical properties of the laminated stainless steel and Cu stabilizers on YBCO coated conductors. We have laminated YBCO coated conductors by continuous dipping soldering process. We have investigated lamination interface between solder and stabilizer of the YBCO coated conductor. We evaluated bonding properties. tensile / shear bonding strength. and peeling strength laminated YBCO coated conductors.

• Steel and Composite Structures
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• v.44 no.6
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• pp.789-801
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• 2022

In order to study the influence of loading angles on seismic performance of steel reinforced concrete (SRC) special-shaped columns, cyclic loading tests and finite element analysis (FEA) were both carried out. Seven SRC special-shaped columns, including two L-shaped columns, three T-shaped columns and two cross-shaped columns, were tested, and the failure patterns of the columns with different loading angles were obtained. Based on the tests, the FEA models of SRC special-shaped columns with different loading angles were established. According to the simulation results, hysteretic curves and seismic performance indexes, including bearing capacity, ductility, stiffness and energy dissipation capacity, were analyzed in detail. The results showed that the failure patterns were different for the columns with the same section and different loading angles. With the increasing of loading angles, the hysteretic curves became fuller and the bearing capacity and initial stiffness appeared increasing tendency, but the energy dissipation capacity changed insignificantly. When the loading angle changed, the ductility got better with the larger area of steel at the failure side for the unsymmetrical section and near the neutral axis for the symmetrical section, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.4
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• pp.202-209
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• 2002

The stochiometric mix of evaporating materials for the $CuInSe_2$single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CuInSe_2$compound crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$single crystal thin films measured from Hall effect by van der Pauw method. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal field splitting $\Delta$Cr. From the photoluminescence measurement on $CuInSe_2$single crystal thin film, we observed free exciton ($E_x$) existing only high quality crystal and neutral bound exciton ($A^{\circ}$, X) having very strong peak intensity. Then, the full-width-at-half-maximum (FWHM) and binding energy of neutral donor bound exciton were 7 meV and 5.9 meV, respectivity. By haynes rule, an activation energy of impurity was 59 meV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.175-178
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• 2004

The stochiometric mixture of evaporating materials for the $ZnIn_2S_4$ single crystal thin film was prepared from horizontal furnace. To obtain the $ZnIn_2S_4$ single crystal thin film, $ZnIn_2S_4$ mixed crystal was deposited on throughly etched semi-insulating GaAs(100) in the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively and the growth rate of the $ZnIn_2S_4$ sing1e crystal thin film was about $0.5\;{\mu}m/hr$. The crystalline structure of $ZnIn_2S_4$ single crystal thin film was investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of $ZnIn_2S_4$ single crystal thin film measured from Hall effect by van der Pauw method are $8.51{\times}10^{17}\;cm^{-3}$, $291\;cm^2/V{\cdot}s$ at $293_{\circ}\;K$, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $ZnIn_2S_4$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}S_O$ and the crystal field splitting ${\Delta}Cr$ were 0.0148 eV and 0.1678 eV at $10_{\circ}\; K$, respectively. From the photoluminescence measurement of $ZnIn_2S_4$ single crystal thin film, we observed free excition $(E_X)$ typically observed only in high quality crystal and neutral donor bound exciton $(D^{o},X)$ having very strong peak intensity The full width at half maximum and binding energy of neutral donor bound excition were 9 meV and 26 meV, respectively, The activation energy of impurity measured by Haynes rule was 130 meV.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.2
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• pp.9-14
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• 2009

The effects of post-annealing temperature on the optical and electrical properties of P-doped ZnO thin films grown on sapphire substrate have been investigated under oxygen ambient. The XRD shows that regardless of the post-annealing temperature, all P-doped ZnO thin films indicate the c-axis orientation. The results of hall effect measurements indicate the P-doped ZnO thin film annealed at $850^{\circ}C$ exhibits p-type behavior with hole concentration of $1.18{\times}1016cm^{-3}$ and hole mobility of $0.96cm^2/Vs$. The low-temperature (10K) Photoluminescence results reveal that the peak related to the neutral-acceptor exciton (A0X), free electrons to neutral acceptor (FA) and donor acceptor pair (DAP) at 3.351ev, 3.283eV and 3.201eV are observed in the films showing p-type behavior with acceptor. The optimization of deposition and post-annealing conditions will certainly make the P-doped ZnO thin films promising materials for the application to the next generation of optical devices.

• Korean Journal of Crystallography
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• v.12 no.3
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• pp.127-136
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• 2001

A stoichiometric mixture of evaporating materials for ZnGa₂Se₄single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, ZnGa₂Se₄mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were 610℃ and 450℃, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnGa₂Se₄single crystal thin films measured from Hall effect by von der Pauw method are 9.63×10/sup 17/㎤ and 296 ㎠/V·s at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the ZnGa₂Se₄single crystal thin film, we have found that the values of spin orbit splitting △so and the crystal field splitting Δcr were 251.9meV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on th ZnGa₂Se₄single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (A°, X) having very strong peak intensity. Then, the full-width-at-half-maximum (FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.

• Journal of Sensor Science and Technology
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• v.10 no.6
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• pp.328-337
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• 2001

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_2Se_4$ single crystal thin film, we observed free excition ($E_x$) existing only high quality crystal and neutral bound exiciton ($D^{\circ}$, X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.