• 반도체디스플레이기술학회지
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• 제7권2호
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• pp.63-67
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• 2008

The MgO protective layer plays an important role in plasma display panels (PDPs). Our previous work demonstrated that the properties of MgO thin film could be improved, which were deposited by ion beam assisted deposition (IBAD). However arc discharge always occurs during the IBAD process. To avoid this problem, oxygen neutral beam assisted deposition (NBAD) is used to deposit MgO thin films in this paper. The energy of the oxygen neutral beam was used as the parameter to control the deposition. The experimental results showed that the oxygen neutral beam energy was effective in determining in F/$F^+$ centers, crystal orientation, surface morphology of the MgO thin film, and the discharge characteristics of AC PDP. The lowest firing voltage $(V_f)$ and the highest secondary electron emission coefficient $(\gamma)$ were obtained when the neutral beam energy was 300 eV.

• 한국진공학회지
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• 제15권4호
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• pp.387-394
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• 2006

본 연구에서는 반응성 이온빔을 low-angle forward reflection으로 생성시킨 중성빔을 이용하여 Aspect Ratio Dependent Etching (ARDE) 현상이 제거되는 효과에 대하여 연구하였다. SF6 가스를 사용하여 Inductively Coupled Plasma system과 이온빔으로 각각 poly-Si 을 식각한 결과 ARDE 현상을 관찰할 수 있었으며, Si 기판위에 증착된 Poly-Si을 식각하는 것보다 $SiO_2$ 기판 위에 증착된 Poly-Si을 식각하는 것이 ARDE 현상이 더 많이 나타난다는 것을 관찰할 수 있었다. 반면에 같은 공정 조건에서 중성빔으로 poly-Si을 식각한 결과 이러한 ARDE 현상이 효과적으로 제거되었음을 관찰할 수 있었다. 중성빔을 이용하여 ARDE 현상이 제거되는 원리는 2 차원의 XOOPIC code 와 TRIM code를 사용하여 여러가지 나노스케일의 형상을 컴퓨터 시뮬레이션하여 증명하였다.

• 한국진공학회지
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• 제17권2호
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• pp.96-101
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• 2008

MgO는 플라즈마 디스플레이 패널 (Plasma Display Panel, PDP)의 보호막으로 널리 쓰이고 있다. 기존의 산소 이온빔 보조 증착(Ion-Beam-Assisted Deposition, IBAD) 방법을 이용하여 MgO 보호막을 형성시킨 경우 이온빔의 충전에 의해 야기되는 아크(Arc) 문제 등이 있었다. 이 문제점을 해결하기 위하여, 산소 중성빔 보조증착(Neutral-Beam-Assisted Deposition, NBAD) 방법을 이용하여 MgO를 증착하였다. 그리고 산소 중성빔의 에너지를 변화시킴에 따라 MgO 보호막의 특성과 PDP 패널 방전 특성에 미치는 영향을 분석하였다. 이에 따른 실험 결과로부터 산소 중성빔 에너지가 300eV일 때, 최소 방전 개시 전압, 최고 발광 휘도 및 최고 발광 효율을 얻을 수 있었다.

• Journal of Electrical Engineering and Technology
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• 제10권1호
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• pp.216-226
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• 2015

The neutral beam injection generate ultra-high temperature energy in the tokamak of nuclear fusion. The neutral beam injection make up arc power supply, filament power supply and acceleration & deceleration power supply. The arc power supply has characteristics of low voltage and high current. Arc power supply generate arc through constant output of voltage and current. So this paper proposed suitable buck converter for low voltage and high current. The proposed buck converter used parallel switch because it can be increased capacity and decrease conduction loss. When an arc generated, the neutral beam injection chamber occur high voltage. And it will break output capacitor of buck converter. Therefore the output capacitor was removed in the proposed converter. Thus the proposed converter should be designed for the characteristics of low voltage and high current. Also, the arc power supply should be guaranteed for system stability. The proposed parallel buck converter enables the system stability of the divided low output voltage and high current. The proposed converter with constant output be the most important design of the output inductor. In this paper, designed arc power supply verified operation of system and stability through simulation and prototype. After it is applied to the 288[kW] arc power supply for neutral beam injection.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.194-194
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• 2011

The effects of argon neutral beam (NB) energy on the amorphous carbon (a-C) films were investigated, while the a-C films were deposited by neutral particle beam assisted sputtering (NBAS) system. The energy of neutral particle beam can be controlled by reflector bias voltage directly as a unique operating parameter in this system. The deposition characteristics of the films investigated of Raman spectra, UV-visible spectroscopy, electrical conductivity, stress measurement system, and ellipsometer indicate the properties of amorphous carbon films can be manipulated by only NB energy (or reflector bias voltage) without changing any other process parameters. We report the effect of reflector bias voltage in the range from 0 to -1KV. By the increase of the reflector bias voltage, the amount of cross-linked sp2 clusters as well as the sp3 bonding in the a-C film coated by the NBAS system can be increased effectively and the composition of carbon thin films can be changed from nano-crystalline graphite phase to amorphous carbon phase.

• Steel and Composite Structures
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• 제15권5호
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• pp.467-479
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• 2013

In this paper, a new first-order shear deformation beam theory based on neutral surface position is developed for bending and free vibration analysis of functionally graded beams. The proposed theory is based on assumption that the in-plane and transverse displacements consist of bending and shear components, in which the bending components do not contribute toward shear forces and, likewise, the shear components do not contribute toward bending moments. The neutral surface position for a functionally graded beam which its material properties vary in the thickness direction is determined. Based on the present new first-order shear deformation beam theory and the neutral surface concept together with Hamilton's principle, the motion equations are derived. To examine accuracy of the present formulation, several comparison studies are investigated. Furthermore, the effects of different parameters of the beam on the bending and free vibration responses of functionally graded beam are discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.253-253
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• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• 한국진공학회지
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• 제8권4B호
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• pp.556-564
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• 1999

The analysis on heat fluxed on and transmission efficiencies by the collimators of neutral beam injection lines in KSTAR tokamak device has been carried out. And a mathematical model describing non-Gaussian beam distribution profile has been established. A neutral beam injection device is composed of 3 separate ion sources and corresponding beam transport lines, which deal with 7.8 MW of beam power, respectively. The divergence angles of ion beam are $1.2^{\circ}$and $0.5^{\circ}$, in vertical and horizontal directions, respectively. The maximum normal heat load on source exit scraper is 9.1 kW/$\textrm{cm}^2$ and net beam transmission efficiency is ~28%. The effect of misalignment of ion source and scrapers on the scraper heat load and beam transmission also has been analyzed.

• Journal of Korean Vacuum Science & Technology
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• 제7권1호
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• pp.23-26
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• 2003

In this study, a neutral beam was formed using a low angle forward reflection of the ion beam and its degree of neutralization at different reflection angles was investigated. When the ion beam was reflected by a reflector at the angles lower than 15$^{\circ}$, most of the ions reflected were neutralized and the lower reflector angle showed the higher degree of neutralization. Photoresist(PR) and SiO$_2$ etchings were carried out with the neutralized oxygen and fluorine radical fluxes, respectively, and highly anisotropic etch profiles could be obtained suggesting the formation of highly directional neutral flux.

• 한국재료학회지
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• 제16권4호
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• pp.213-217
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• 2006

In this study, atomic layer etching of Si has been carried out using $Cl_2$ adsorption followed by the irradiation Ar neutral beam of low energy. In this experiment, the etch rate of Si was dependent on the $Cl_2$ pressure(the surface coverage of chlorine) and the irradiation time of Ar neutral beam(the flux density of Ar neural beam). And the etch rate of Si(100) and Si(111) were saturated exactly at one monolayer per cycle with $1.36{\AA}/cycle\;and\;1.57{\AA}/cycle$, respectively.