• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.3
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• pp.24-32
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• 2011

[ $SF_6$ ]gas, which has an excellent dielectric strength and interruption performance, is used in various applications such as gas insulated switchgear (GIS) in substations. However, since $SF_6$ has a high global warming potential (GWP), it is necessary to find an eco-friendly alternative insulation gas. In order to examine the possibility of using alternative insulation gases for $SF_6$ in power distribution system equipment, the dielectric strength and physical phenomena of dry air in a quasi-uniform electric field are investigated experimentally in this paper. As a result, the breakdown voltages for positive polarity are higher than those for negative polarity under impulse voltage applications. The negative 50[%] flashover voltage, $V_{50}$ of dry air under conditions above 0.4[MPa] gas pressure, is higher than 150[kV], that is the basic impulse insulation level of distribution equipment. The $V_{50}$ increases linearly with increasing the gas pressure, regardless of the waveform and polarity of the applied impulse voltages. The voltage-time curves are dependent on the rise time of the impulse voltage and gas pressure. Furthermore, streamer discharge was observed through light emission images by an ICCD camera under impulse voltage applications.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.2
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• pp.67-75
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• 2007

To improve low sense margin at low voltage, we propose a negatively driven sensing (NDS) scheme and to solve the problem of WL-to-BL short leakage fail, a variable bitline reference scheme with free-level precharged bitline (FLPB) scheme is adopted. The influence of the threshold voltage offset of NMOS and PMOS transistors in a latch type sense amplifier is very important factor these days. From evaluating the sense amplifier offset voltage distribution of NMOS and PMOS, it is well known that PMOS has larger distribution in threshold voltage variation than that of NMOS. The negatively-driven sensing (NDS) scheme enhances the NMOS amplifying ability. The offset voltage distribution is overcome by NMOS activation with NDS scheme first and PMOS activation followed by time delay. The sense amplifier takes a negative voltage during the sensing and amplifying period. The negative voltage of NDS scheme is about -0.3V to -0.6V. The performance of the NDS scheme for DRAM at the gigabit level has been verified through its realization on 1-Gb DDR2 DRAM chip.

• Experimental Neurobiology
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• v.26 no.5
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• pp.241-251
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• 2017

Saturation mutagenesis was performed on a single position in the voltage-sensing domain (VSD) of a genetically encoded voltage indicator (GEVI). The VSD consists of four transmembrane helixes designated S1-S4. The V220 position located near the plasma membrane/extracellular interface had previously been shown to affect the voltage range of the optical signal. Introduction of polar amino acids at this position reduced the voltage-dependent optical signal of the GEVI. Negatively charged amino acids slightly reduced the optical signal by 33 percent while positively charge amino acids at this position reduced the optical signal by 80%. Surprisingly, the range of V220D was similar to that of V220K with shifted optical responses towards negative potentials. In contrast, the V220E mutant mirrored the responses of the V220R mutation suggesting that the length of the side chain plays in role in determining the voltage range of the GEVI. Charged mutations at the 219 position all behaved similarly slightly shifting the optical response to more negative potentials. Charged mutations to the 221 position behaved erratically suggesting interactions with the plasma membrane and/or other amino acids in the VSD. Introduction of bulky amino acids at the V220 position increased the range of the optical response to include hyperpolarizing signals. Combining The V220W mutant with the R217Q mutation resulted in a probe that reduced the depolarizing signal and enhanced the hyperpolarizing signal which may lead to GEVIs that only report neuronal inhibition.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.2
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• pp.87-93
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• 2010

This paper presents a low-power, wide tuning range VCO with automatic two-step negative-Gm calibration loop to compensate for the process, voltage and temperature variation. To cover the wide tuning range, digital automatic negative-Gm tuning loop and analog automatic amplitude calibration loop are used. Adaptive body biasing (ABB) technique is also adopted to minimize the power consumption by lowering the threshold voltage of transistors in the negative-Gm core. The power consumption is 2 mA to 6mA from a 1.2 V supply. The VCO tuning range is 2.65 GHz, from 2.35 GHz to 5 GHz. And the phase noise is -117 dBc/Hz at the 1 MHz offset when the center frequency is 3.2 GHz.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1248-1251
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• 1995

This paper reports some results of an experimental investigation of planar double injection magnetic sensors. The threshold voltage proved to be very sensitive to an applied magnetic field. The magnitude and direction of the threshold voltage variation depends on the field strength and its orientation with respect to the conduction chennel. The positively-directed field pushes the carriers into the bulk causing an increase in the threhold voltage. These results seem to agree with a path modulation due to Lorentz force. The application of a negative field causes a negative variation, which is dependent on the surface recombination velocity of the silicon-$SiO_2$ interface.

• Journal of the Korean Institute of Telematics and Electronics
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• v.11 no.6
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• pp.16-24
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• 1974

In this paper the method of constructing short and open stable voltage inversion negative immittance converter (VNIC) circuits is proposed according to simplified equivalent models witch consist of a parameter control circuit, and a voltage or a current control circuit. VNIC characteristics can be obtained as gate voltage of common gate connection is controlled by the output of the parameter control circuit corresponding to its input. Constructed circuits are analysed, and the experimental results are compared and cheeked with the calculated results. Errors are found less than 11%. Oscillation behavior of constructed VNIC oscillator is compared with that of negative resistance oscillator.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.17-20
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• 2002

This study has been investigated that traps generated inside of the oxide and at the oxide interfaces by the stress bias voltage. The traps are charged near the cathode with negative charge and charged near the anode with positive charge. The charge state of the traps can easily be changed by application of low voltages after the stress high voltage. These trap generation involve either electron impact ionization processes or high field generation processes. It determined to the relative traps locations inside the oxides ranges from 113.4A to 814A with capacitor areas of 10$^{-3}$ $\textrm{cm}^2$ The oxide charge state of traps generated by the stress high voltage contain either a positive or negative charge.

• Journal of Industrial Technology
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• v.19
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• pp.217-226
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• 1999

A single phase to three phase power converter with cost effective and simple structure is proposed. The converter consists of rectifier and inverter. The rectifier is composed of a half wave rectifier, a dc link capacitor, and a current limiting inductor, and the inverter is of only two switches with PWM control. For negative sequence operation the inverter output voltage leads the line input by $60^{\circ}$, and for positive sequence operation the inverter output voltage leads by $60^{\circ}$. We can see that positive sequence operation shows higher output voltage, slight harmonic distortion(2%), and better performances such as high efficiency and high power factor. A mathematical model for system analysis is provided, and specifications for selection and control scheme both for start-up and for steady state are analyzed. comparison and operational limits of positive and negative sequence operation are performed, and simulations and experiments are executed to verify the proposed.

• Proceedings of the KIEE Conference
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• 2001.07a
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• pp.149-151
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• 2001

This paper proposes the design of STATCOM(static synchronous compensator) stabilizer for improving power system stability using fuzzy logic controller(FLC). The STATCOM DC voltage regulator contributes negative damping to the power system as the installation of STATCOM DC voltage regulator. STATCOM stabiliser is superimposed on the AC voltage regulator to compensate the negative damping effect. To evaluate usefulness of the proposed method, we perform the nonlinear simulation on a single-machine infinite bus system. As results of the simulations, the proposed method shows better control performance than PI controller in terms of damping effects.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1243-1246
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• 2009

A novel a-Si TFT integrated gate driver circuit which suppresses the threshold voltage shift due to prolonged positive gate bias to pull-down TFTs, is reported. Negative gate-to-drain bias is applied alternately to the pull-down TFTs to recover the threshold voltage shift. Consequently, the stability of the circuit has been improved considerably.