• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.2
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• pp.214-222
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• 2008

The equivalent circuit for the RLH-TL is proposed considering radiation effects due to the inclusion of a series capacitor and shunt inductor in a unit cell for the right/left-handed transmission line(RLH-TL). The design equations to realize a specific phase shift at a given frequency is also provided. The S-parameters for unit cells with N=1, 3, 5, and 10 are analyzed in various aspects based on the EM and circuit simulations especially for the purpose of controlling radiation along RLH-TL's. A modification formula for the radiation rate per unit cell is also proposed for good agreement between the EM and circuit simulation results.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.40-47
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• 2014

In this paper, $Al_2O_3$ film deposited by thermal atomic layer deposition (ALD) with diluted $NH_4OH$ instead of $H_2O$ was suggested for passivation layer and anti-reflection (AR) coating of the p-type crystalline Si (c-Si) solar cell application. It was confirmed that the deposition rate and refractive index of $Al_2O_3$ film was proportional to the $NH_4OH$ concentration. $Al_2O_3$ film deposited with 5 % $NH_4OH$ has the greatest negative fixed oxide charge density ($Q_f$), which can be explained by aluminum vacancies ($V_{Al}$) or oxygen interstitials ($O_i$) under O-rich condition. $Al_2O_3$ film deposited with $NH_4OH$ 5 % condition also shows lower interface trap density ($D_{it}$) distribution than those of other conditions. At $NH_4OH$ 5 % condition, moreover, $Al_2O_3$ film shows the highest excess carrier lifetime (${\tau}_{PCD}$) and the lowest surface recombination velocity ($S_{eff}$), which are linked with its passivation properties. The proposed $Al_2O_3$ film deposited with diluted $NH_4OH$ is very promising for passivation layer and AR coating of the p-type c-Si solar cell.

• Korean Journal of Optics and Photonics
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• v.14 no.2
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• pp.135-141
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• 2003

In arrayed waveguide grating (AWG) devices whose waveguides were composed of polymer with negative thermo-optic coefficient as overcladding, and silica with positive thermo-optic coefficient as both core and undercladding, we investigated the temperature dependence of the central wavelength using two-dimensional SFDM. From these results, it was confirmed that the temperature dependence can be nearly eliminated by adjusting the refractive index of the cladding and the thickness of the silica thin film upper-loaded on the core. Based on the numerical calculations, the AWG device with polymer overcladding was fabricated. and its optical characteristics were compared with those of the orginal silica AWG device. The introduction of polymer overcladding decreased the temperature dependence of the central wavelength from 0.0130 nm/$^{\circ}C$ to 0.0028 nm/$^{\circ}C$ without deteriorating the insertion loss and crosstalk characteristics.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1245-1251
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• 1999

Phase-change optical disk very rapid recording, high densification of data, resulting in high feedback rate and good C/N(carrier to noise) ratio of a feedback signal. However, repetitive thermal energy may cause the deformation of a disk or the lowering of an eliminability and a cyclability of the recording. The lowering of the cyclability can be reduced by insertion of thin layer of ZnS-$SiO_2$ dielectric thin film in appropriate disk structure between the upper and lower part of the recording film. Using the Taguchi method, optimum conditions satisfying both the optimized quality characteristic values and the scattering values for film formation were found to be the target R.F. power of 200W, the substrate R.F. power of 20W, the Ar pressure of 6mTorr, and the electrode distance of 6cm. From the refractive index data, the existence of the strong interaction between the electrode distance and Ar pressure was confirmed, and so was the large effect of the electrode distance on transmittance. According to the analysis of TEM and XRD, the closer the electrode distance was, the finer was the grain size due to the high deposition rate. However, the closer electrode distance brought the negative effect on the morphology of the film and caused the reduction of transmittance. AFM and SEM analyses showed that the closer the electrode distance was, the worse was the morphology due to the high rate of the deposition. Under optimum condition, the deposited thin film showed a good morphology and dense microstructure with less defects.

• Journal of the Mineralogical Society of Korea
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• v.5 no.2
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• pp.109-121
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• 1992

For the purpose of mineralogical and chemical study on the topazes from various localities of world(Brzail, China, India, Nigeria and Sri Lanka), electron microprobe analysis(EPMA), neutron activation analysis(NAA), X-ray diffractometry, Raman spectroscopy, etch test, scanning electron microscopy, refractive index, specific gravity, fluid inclusion were performed. The chemical composition in topaz was discussed along with its physical and structural properties. Variations in the unit-cell dimension and physical properties of topaz were found to have a close relations in the unit-cell dimension and physical properties of topaz were found to have a close relationship with extent of substitution of $OH^-\;for\;F^-$. According to neutron activation analyses, the trace elements had no effects on the physical properties of topaz. Raman spectra showed that the peaks of topaz were different in intensity from one locality to another. Etching defects in topaz includes negative crystal defect o point-bottom pit(India, Nigeria) and net work defect of curl-bottom pit(Brazil, China). Fluid inclusions in topaz may be classiffied into liquid $CO_2$-bearing inclusion, gaseous inclusion, halite, sylvite-bearing inclusion and liquid inclusion. The results of this study can be useful to devising artificial coloring methods for topaz with different mineralogical compositions.