• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.70-73
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• 2001

MFIS(Metal-ferroelectric-insulator- semiconductor) structures using silicon oxynitride(SiON) buffer layers were fabricatied and demonstrated nonvolatile memory operations. Oxynitride(SiON) films have been formed on p-Si(100) by RTP(rapid thermal process) in O$_2$+N$_2$ ambient at 1100$^{\circ}C$. The gate leakage current density of Al/SiON/Si(100) capacitor was about the order of 10$\^$-8/ A/cm$^2$ at the range of ${\pm}$ 2.5 MV/cm. The C-V characteristics of Al/LiNbO$_3$/SiON/Si(100) capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 24. The memory window width was about 1.2V at the electric field of ${\pm}$300 kV/cm ranges.

• 한국재료학회지
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• 제33권6호
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• pp.229-235
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• 2023

An all-perovskite oxide heterostructure composed of SrSnO₃/Nb-doped SrTiO₃ was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO₃ and Nb-doped SrTiO₃ were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제37회 하계학술대회 초록집
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• pp.168-168
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• 2009

• 대한전자공학회논문지SD
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• 제38권7호
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• pp.473-478
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• 2001

강유전 물질인 Pb/sub 0.99/［(Zr/sub 0/6Sn/sub 0.4/)/0.9/Ti/sub 0.1/］0.98/Nb/sub 0.02/O₃(PNZST) 박막을 10 mole%의 과잉 PbO가 첨가된 타겟을 이용하여 La/sub 0.5/Sr/sub 0.5/CoO₃(LSCO)/Pt/Ti/SiO₂/Si 기판상에 RF 마그네트론 스퍼터링 방법으로 증착하였다. 증착된 박막에 대하여 온도와 시간을 다양하게 변화시키면서 급속 열처리(rapid thermal annealing) 한 후, 그 결정성과 전기적 특성을 조사하였다. 80 W의 RF 전력, 500 ℃의 기판온도에서 증착한 후, 급속 열처리된 박막이 페로브스카이트상으로 결정화되었으며, 650 ℃, 공기중에서 10초동안 급속 열처리된 박막이 가장 우수한 결정성을 나타내었다. 이러한 박막으로 제작된 PNZST 커패시터는 약 20 μC/㎠정도의 잔류 분극과 약 50 kV/cm 정도의 항전계를 나타내었으며, 2.2×10/sup 9/의 스위칭 후에도 잔류분극의 감소는 10 %미만이었다.

• 한국재료학회지
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• 제11권5호
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• pp.367-371
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• 2001

RF magnetron sputtering 법으로 T $a_2$ $O_{5}$ 세라믹 타겟과 S $r_2$N $b_2$ $O_{7}$ 세라믹 타겟을 동시 sputtering하여 저유전율 S $r_2$(T $a_{1-x}$ , N $b_{x}$)$_2$ $O_{7}$(STNO) 박막을 p-type Si (100) 기판 위에 증착하여 NDRO 강유전체 메모리 (Non-destructive read out ferro-electric random access memory)에 사용되는 Pt/STNO/Si (MFS) 구조의 응용 가능성을 확인하였다. Sr$_2$Nb$_2$ $O_{7} (SN O)$ 타겟과 T $a_2$ $O_{5}$ 타겟의 출력의 비를 100w/100w, 70w/100w, 그리고 50w/100w로 조절하면서 x 값을 달리하여 조성을 변화시켰다. 성장된 박막을 8$50^{\circ}C$, 90$0^{\circ}C$, 그리고 9$50^{\circ}C$에서 1시간 동안 산소 분위기에서 열처리하였다. 조성과 열처리 온도에 따른 구조적 특징을 XRD에 의해 관찰하였으며 표면특성은 FE-SBM에 의해 관찰하였고, C-V 측정과 I-V 측정으로 박막의 전기적 특성을 조사하였다. SNO 타겟과 T $a_2$ $O_{5}$ 타켓의 출력비에 따른 STNO 박막의 성장 결과 70W/170W의 출력비에서 성장된 STNO박막에서 Ta의 양이 상대적 맡은 x=0.4였으며 가장 우수한 C-V 특성 및 누설 전류 특성을 보였다. 이 조성에서 성장된 STNO박막은 3-9V외 인가전압에서 메모리 윈도우 갑이 0.5-8.3V였고 누설전류밀도는 -6V의 인가전압에서 7.9$\times$10$_{-8}$A /$\textrm{cm}^2$였다.

• 한국재료학회지
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• 제14권9호
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• pp.634-641
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• 2004

The photocatalytic performance of $TiO_2$ thin films coated on porous alumina balls using various aqueous $TiOCl_2$ solutions as starting precursors, to which 1.0 $mol\%$ transition metal ($Ni^{2+},\;Cr^{3+},\;Fe^{3+},\;Nb^{3+},\;and\;V^{5+}$) chlorides had been already added, has been investigated, together with characterizations for $TiO_2$ sols synthesized simultaneously in the same autoclave through hydrothermal method. The synthesized $TiO_2$ sols were all formed with an anatase phase, and their particle size was between several nm and 30 nm showing ${\zeta}-potential$ of $-25{\sim}-35$ mV, being maintained stable for over 6 months. However, the $TiO_2$ sol added with Cr had a much lower value of -potential and larger particle sizes. The coated $TiO_2$ thin films had almost the same shape and size as those of the sol. The pure $TiO_2$ sol showed the highest optical absorption in the ultraviolet light region, and other $TiO_2$ sols containing $Cr^{3+},\;Fe^{3+}\;and\;Ni^{2+}$ showed higher optical absorption than pure sol in the visible light region. According to the experiments for removal of a gas-phase benzene, the pure $TiO_2$ film showed the highest photo dissociation rate in the ultraviolet light region, but in artificial sunlight the photo dissociation rate of $TiO_2$ coated films containing $Cr^{3+},\;Fe^{3+}\;and\;Ni^{2+}$ was measured higher together with the increase of optical absorption by doping.

• 한국세라믹학회지
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• 제45권9호
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• pp.524-530
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• 2008

Anti-Reflective (AR) thin film coatings of $SiO_2$ (n= 1.48) and $TiO_2$ (n=2.17) were deposited by ion-beam assisted deposition (IBAD) with End-Hall ion source and conventional electron beam (e-beam) evaporation to investigate the effect of deposition method on the refractive indicies (n) of the fIlms. Green-light generation using a GaAs laser diode was achieved via excitation of the second harmonic. The latter resulted from the transmission of the fundamental guided-mode wave of 1064 nm through periodically poled $LiNbO_3$. Large differences in the refractive indicies of each of the layers in the multilayer coating may improve AR performance. IBAD of $SiO_2$ reduced its refractive index from 1.45 to 1.34 at 1064 nm. Conversely, e-beam evaporation of $TiO_2$ increased its refractive index from 1.80 to 2.11. In addition, no fluctuations in absorption at the wavelength of 1064 nm were found. The results suggest that films prepared by different deposition methods can increase the effectiveness of multilayer AR coatings.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

• 센서학회지
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• 제22권4호
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• pp.244-248
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• 2013

The discovery of a two-dimensional electron gas (2DEG) in $LaAlO_3$ (LAO)/$SrTiO_3$ (STO) heterostructure has stimulated intense research activity. We suggest a new structure model based on $KNbO_3$ (KNO) material. The KNO thin films were grown on $TiO_2$-terminated STO substrates as a p-type structure ($NbO_2/KO/TiO_2$) to form a two-dimensional hole gas (2DHG). The STO thin films were grown on KNO/$TiO_2$-terminated STO substrates as an n-type structure to form a 2DEG. Oxygen pressure during the deposition of the KNO and STO thin films was changed so as to determine the effect of oxygen vacancies on 2DEGs. Our results showed conducting behavior in the n-type structure and insulating properties in the p-type structure. When both the KNO and STO thin films were deposited on a $TiO_2$-terminated STO substrate at a low oxygen pressure, the conductivity was found to be higher than that at higher oxygen pressures. Furthermore, the heterostructure formed at various oxygen pressures resulted in structures with different current values. An STO/KNO heterostructure was also grown on the STO substrate, without using the buffered oxide etchant (BOE) treatment, so as to confirm the effects of the polar catastrophe mechanism. An STO/KNO heterostructure grown on an STO substrate without BOE treatment did not exhibit conductivity. Therefore, we expect that the mechanics of 2DEGs in the STO/KNO heterostructures are governed by the oxygen vacancy mechanism and the polar catastrophe mechanism.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 하계학술연구발표회 및 한.일 공동심포지엄
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• pp.88-89
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• 2003

During the past decade, giant magnetotransport phenomena such as giant magetoresistance (GMR) in thin films and in manganese perovskites, and, giant magnetoimpedance (GMI) in soft magnetic amorphous ribbons, have brought much interest in the basic physical understanding and their applications as magnetic recording heads and in magnetic sensors technology. Among the parameters required for the quality of a magnetic sensor, temperature dependences of GMR and GMI profiles are playing an important role. In the present work, we have studied temperature dependences of the longitudinal permeability and giant magnetoimpedance effect in $Co_{70}$F $e_{5}$S $i_{15}$ N $b_{2.2}$C $u_{0.8}$ $B_{7}$ amorphous ribbons expecting as a promising candidate in the domain of magnetic sensors.rs.rs.rs.s.