• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.6
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• pp.1175-1177
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• 2011

The SBN thin films were deposited on Pt/Ti/$SiO_2$/Si and p-type Si(100) substrate by rf magnetron sputtering method using $Sr_{0.7}Bi_{2.3}Nb_2O_9$ ceramic target. SBN thin films deposited were annealed at 600~800[$^{\circ}C$] by furnace in oxygen atmosphere during 40min. The polarization characteristics have been investigated to confirm the possibility of the SBN thin films for the application to destructive read out ferroelectric random access memory. The maximum remanent polarization and the coercive voltage are 0.6[${\mu}C/cm^2$], 1.2[V] respectively at annealing temperature of 800[$^{\circ}C$]. The leakage current density was the $2.57{\times}10^{-6}[A/cm^2]$ at an applied voltage of 5[V] at annealing temperature of 650[$^{\circ}C$]. Also, the fatigue characteristics of SBN thin films did not change up to $10^8$ switching cycles.

• Journal of the Korean Ceramic Society
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• v.34 no.1
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• pp.23-30
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• 1997

Semiconductive SrTiO3 ceramic bodies were prepared by conventional ceramic powder processes in-cluding sintering in a reducing atmosphere. Sodium or potassium ions were diffused from the surface of the sintered bodies into the inner region using thermal diffusion process at 800-120$0^{\circ}C$. The effects of such ther-mal treatments on the electrical and chemical characteristics of the grain boundaries were investigated. The presence of sodium or potassium ions at grain boundaries produces non-linear current-voltage behaviors, electrical boundary potential barriers of 0.1-0.2eV, and threshold voltages of 10-70V. The diffused ions form diffusion layers with thicknesses of 20-50nm near the grain boundaries, reducing the concentration of strontium and oxygen.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.9
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• pp.692-701
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• 2012

Recently, many lead-free piezoelectric materials have been investigated for the replacement of existing Pb-based piezoelectric ceramics because of globally increasing environmental interest. There has been remarkable improvement in piezoelectric properties of some lead-free ceramics such as $(Bi,Na)TiO_3-(Bi,K)TiO_3-BaTiO_3$, $(Na,K)NbO_3-LiSbO_3$, and so on. However, no one still has comparable piezoelectric properties to lead-based materials. Therefore, new lead-free piezoelectric ceramics are required. $BiFeO_3$ has a rhombohedrally distorted perovskite structure at room temperature and a very high Curie temperature ($T_C$= 1,100 K). And a very large electric polarization of 50 ~ 60 ${\mu}C/cm^2$ has been reported both in epitaxial thin film and single crystal $BiFeO_3$. Therefore, a high piezoelectric effect is expected also in a $BiFeO_3$ ceramics. The recent research activities on $BiFeO_3$ or $BiFeO_3$-based solid solutions are reviewed in this article.

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.128-135
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• 1998

The paper gives a brief introduction to protonic defects and their chemistry, thermodynamics and transport in oxides. The temperature dependence of the equilibrium concentration of protons is illustrated and compared for different acceptor-doped oxides. The difficulties of saturating as well as emptying the oxides of protons are discussed. In order to illustrate the possibility of lattice relaxation of defects, a conceptual study is made of a case where the enthalpy of dissolution of protons(water) at the cost of oxygen vacancies is assumed dependent on the concentration of vacancies. It is shown how this changes the behavior of hydration curves vs temperature and water vapour pressure. finally, a discussion is given on the water uptake in heavily oxygen deficient oxides; how water uptake may affect order-disorder in the oxygen sublattice and eventually lead to defective, disordered or ordered oxyhydroxides or hydroxides of potential interest as intermediate temperature proton conductions.

• Korean Journal of Materials Research
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• v.30 no.10
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• pp.502-508
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• 2020

This paper focuses on the electrical properties and stability against DC accelerated aging stress of ZnO-V₂O₅-MnO₂-Nb₂O₅-Bi₂O₃-Co₃O₄-Dy₂O₃ (ZVMNBCD) varistor ceramics sintered at 850 - 925 ℃. With the increase of sintering temperature, the average grain size increases from 4.4 to 11.8 mm, and the density of the sintered pellets decreases from 5.53 to 5.40 g/㎤ due to the volatility of V₂O₅, which has a low melting point. The breakdown field abruptly decreases from 8016 to 1,715 V/cm with the increase of the sintering temperature. The maximum non-ohmic coefficient (59) is obtained when the sample is sintered at 875 ℃. The samples sintered at below 900 ℃ exhibit a relatively low leakage current, less than 60 mA/㎠. The apparent dielectric constant increases due to the increase of the average grain size with the increase of the sintering temperature. The change tendency of dissipation factor at 1 kHz according to the sintering temperature coincides with the tendency of the leakage current. In terms of stability, the samples sintered at 900 ℃ exhibit both high non-ohmic coefficient (45) and excellent stability, 0.8% in 𝚫E_B/E_B and -0.7 % in 𝚫α/α after application of DC accelerated aging stress (0.85 E_B/85 ℃/24 h).

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.625-628
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• 1998

This paper presents the design method of a temperature stable stepped-impedance resonator using composite material. In this method temperature coefficient of dielectric constant $(\tau\varepsilon)$ and thermal expansion coefficient $(\alpha1)$ of dielectric material were considered. Ba(Zn1/3Nb2/3)O3 and CaZrO3 as composite material having opposite signs of temperature coefficient of dielectric constant were selected. The length of this resonator for the temperature stability of resonance frequency was calculated at 900MHz, 1.4㎓ and 1.9㎓. It was found that the ratio of the length of positive $\tau\varepsilon$ materal to the length of negative $\tau\varepsilon$ material is constant at various resonance frequencies.

• Journal of the Korean Ceramic Society
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• v.43 no.7 s.290
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• pp.389-392
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• 2006

Electric field-induced phase transition from the tetragonal to rhombohedral phase was investigated for the <111> direction in tetragonal PZN-PT single crystals, which have spontaneous polarization along the <001> direction. From the strain and dielectric data, it was confirmed that the samples followed a tetragonal-orthorhombic-rhombohedral phase transition sequence with application of an electric field. This transition is different from the rhombohedral-tetragonal phase transition of <001> rhombohedral composition single crystals, in which a phase transition occurred without showing the intermediate orthorhombic phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.398-401
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• 2001

The dielectric and piezoelectric properties of Pb(Mn$\_$1/3/Nb$\_$2/3)O$_3$-Pb(Zr,Ti)O$_3$ceramics were investigated as a function of Zr/Ti ratio. Curie temperature was increased with the increase of Ti amount. At the Zr/Ti ratio of 0.495/0.505, dielectric constant and electromechanical coupling factor(kp) showed the maximum value of 1159 and 0.523 respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.569-573
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• 2004

RAINBOW(Reduced And Internally Biased Oxide Wafers) are a new class of high-displacement, piezoelectric actuator produced by selectively removing oxygen from one surface of ceramic using a high-temperature chemical reduction process. In this paper, RAINBOW composition of 0.4Pb$(Ni_{1/3}Nb_{2/3})O_3-0.6Pb(Zr_xTi_{1-x})O_3$ were prepared. Its dielectric and piezoelectric properties were investigated in the vicinity of MPB. The strain - electric field characteristics of RAINBOW actuator were significantly improved comparison with the conventional bulk actuator.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.286-289
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• 2012

In this paper, we have proposed piezoelectric energy harvester employing the pillar structure with the diameter size of 500 um. So we have selected the Su-8 photo-resist and modified lithography process to manufacture the pillar structure with height above the $500{\mu}m$. Simultaneously, we tried to make a comparative study to use ceramic bulk - polymer structure In this paper, we will report the process and properties of micro pillar structure based on the PMN-PZT ($Pb(Mg_{1/3}Nb_{2/3})O_3-PbZrTiO_3$) materials. Finally, We will propose a method for generating electrical energy with a piezoelectric element using vibration, an energy source can be obtained from the "clean" energy.