• Title/Summary/Keyword: Narrow-band electromagnetic radiation

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A Study on Malfunction Mode of CMOS IC Under Narrow-Band High-Power Electromagnetic Wave (협대역 고출력 전자기파로 인한 CMOS IC에서의 오동작 특성 연구)

  • Park, Jin-Wook;Huh, Chang-Su;Seo, Chang-Su;Lee, Sung-Woo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.9
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    • pp.559-564
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    • 2016
  • This study examined the malfunction mode of the HCMOS IC under narrow-band high-power electromagnetic wave. Magnetron is used to a narrow-band electromagnetic source. MFR (malfunction failure rate) was measured to investigate the HCMOS IC. In addition, we measured the resistance between specific pins of ICs, which are exposed and not exposed to the electromagnetic wave, respectively. As a test result of measurement, malfunction mode is shown in three steps. Flicker mode causing a flicker in LED connected to output pin of IC is dominant in more than 7.96 kV/m electric field. Self-reset mode causing a voltage drop to the input and output of IC during electromagnetic wave radiation is dominant in more than 9.1 kV/m electric field. Power-reset mode making a IC remained malfunction after electromagnetic radiation is dominant in more than 20.89 kV/m. As a measurement result of pin-to-pin resistance of IC, the differences between IC exposed to electromagnetic wave and normal IC were minor. However, the five in two hundred IC show a relatively low resistance. This is considered to be the result of the breakdown of pn junction when latch-up in CMOS occurred. Based on the results, the susceptibility of HCMOS IC can be applied to a basic database to IC protection and impact analysis of narrow-band high-power electromagnetic waves.

The Analysis of Effect for Photocoupler by Narrow-Band High-Power Electromagnetic Wave (협대역 고출력 전자기파에 의한 포토커플러 영향 분석)

  • Lee, Sung-Woo;Huh, Chang-Su;Seo, Chang-Su;Jin, In-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.1
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    • pp.1-5
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    • 2018
  • This study analyzed the change of electrical characteristics of a photocoupler when a narrow-band electromagnetic wave was combined with the photocoupler. A magnetron (3 kW, 2.45 GHz) was used as the narrow-band electromagnetic source. The EUT was Photocoupler (6N139) and the input signal was divided into two types: a square pulse and the second signal is 0 V. The malfunction of the photocoupler was confirmed by monitoring the variation in the output voltage of the photocoupler. As a result of the experiment, changes in the malfunctioning was observed as the electric field was increased. There are three types of malfunction modes: delay, output voltage off, and fluctuation. Bit errors were analyzed to verify the electrical characteristics of the photocoupler by narrow-band electromagnetic waves. The result of this study can be used as basic data for the effect analysis of photocoupler protection and impact analysis of high-power electromagnetic waves.

An Electrical Properties Analysis of CMOS IC by Narrow-Band High-Power Electromagnetic Wave (협대역 고출력 전자기파에 의한 CMOS IC의 전기적 특성 분석)

  • Park, Jin-Wook;Huh, Chang-Su;Seo, Chang-Su;Lee, Sung-Woo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.9
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    • pp.535-540
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    • 2017
  • The changes in the electrical characteristics of CMOS ICs due to coupling with a narrow-band electromagnetic wave were analyzed in this study. A magnetron (3 kW, 2.45 GHz) was used as the narrow-band electromagnetic source. The DUT was a CMOS logic IC and the gate output was in the ON state. The malfunction of the ICs was confirmed by monitoring the variation of the gate output voltage. It was observed that malfunction (self-reset) and destruction of the ICs occurred as the electric field increased. To confirm the variation of electrical characteristics of the ICs due to the narrow-band electromagnetic wave, the pin-to-pin resistances (Vcc-GND, Vcc-Input1, Input1-GND) and input capacitance of the ICs were measured. The pin-to-pin resistances and input capacitance of the ICs before exposure to the narrow-band electromagnetic waves were $8.57M{\Omega}$ (Vcc-GND), $14.14M{\Omega}$ (Vcc-Input1), $18.24M{\Omega}$ (Input1-GND), and 5 pF (input capacitance). The ICs exposed to narrow-band electromagnetic waves showed mostly similar values, but some error values were observed, such as $2.5{\Omega}$, $50M{\Omega}$, or 71 pF. This is attributed to the breakdown of the pn junction when latch-up in CMOS occurred. In order to confirm surface damage of the ICs, the epoxy molding compound was removed and then studied with an optical microscope. In general, there was severe deterioration in the PCB trace. It is considered that the current density of the trace increased due to the electromagnetic wave, resulting in the deterioration of the trace. The results of this study can be applied as basic data for the analysis of the effect of narrow-band high-power electromagnetic waves on ICs.

Design and Implementation of a Stacked Microstrip Antenna with Broad Bandwidth for ISM Band (ISM 대역에서의 적층 구조를 이용한 광대역 마이크로스트립 안테나 설계 및 제작)

  • Kim, Min-Joon;Lee, Jong-Woo
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2003.11a
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    • pp.437-441
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    • 2003
  • The major drawback of the classical microstrip patch antennas Is their narrow band characteristic from 1% to 5%. In this paper, to improve this drawback, we designed the antenna with stacked structure having one drive patch connected with feed line and four identical radiation patches. Resonance is achieved by adjust ing coupling area between one drive patch and four identical radiation patches and changing the size of drive patch or radial ion patches. Used substrate is FR4(${\epsilon}_r$=4.6 and t=1.6mm) and designed center frequency is 2.45GHz. The designed antenna has a wide bandwidth of 380Mhz form 2.333GHz to 2.713GHz(about 15.5%) including ISM band from 2.4GHz to 2.4835GHz.

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Band-Notched Ultra-Wideband Antenna with Asymmetric Coupled-Line for WLAN and X-Band Military Satellite

  • Lee, Jun-Hyuk;Sung, Young-Je
    • Journal of electromagnetic engineering and science
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    • v.13 no.1
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    • pp.34-37
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    • 2013
  • This paper presents a novel ultra-wideband (UWB) antenna that rejects narrow and broad bands and is suitable for wireless communications. The base of the proposed antenna has a circular patch that can cover the UWB frequency range (3.1~10.6 GHz). The interference issues caused by co-existence within the UWB operation frequency are overcome by a design that uses a parallel-coupled asymmetric dual-line with a circular monopole antenna. The proposed antenna showed a stable radiation pattern, realized gain and reflection coefficient lower than -10 dB across the UWB operation bandwidth except for 5.15~5.85 GHz and 7.25~8.4 GHz. The fabrication, simulation, and measurement results obtained for the proposed antenna were in good agreement with the expected values.

Design of the Broadband PIFA with Multi-Band for SAR Reduction (다중대역을 가지는 SAR 저감용 광대역 PIFA 설계)

  • Choi Donggeun;Shin Hosub;Kim Nam;Kim Yongki
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.16 no.1 s.92
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    • pp.66-77
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    • 2005
  • This paper proposed a novel broadband PIFA(Planar Inverted-F Antenna) for IMT-2000/WLAN/DMB terminal. Two branch lines for meander line were utilized in order to improve the characteristics of PIFA which usually has a narrow band. The shorting strip between the ground plane and meander-type radiation elements were used in order to minimize the size of the antenna. The -10 dB return loss bandwidth of a realized antenna was $38.2{\%}$(1.84~2.71 GHz), which contains the broadband bandwidth with triple band. And the simulated and measured values of 1 g and 10 g averaged peak SAR on human head caused by the triple band PIFA mounted on folder-type handsets were analyzed and discussed. As a result, the measured 1 g and 10 g averaged peak SARs of PIFA were similar with the simulated values and were lower than the 1.6 W/kg and 2 W/kg of 1 g and 10 g averaged peak SAR limits.

Microstrip Fed Meander Slot Antenna with Open-End for the RF Remote Controller (RF 리모컨용 마이크로스트립 급전 개방 종단을 갖는 미앤더 슬롯 안테나)

  • Jin, Jeong-Hi;Kim, Ui-Jung;Jang, Soo-Young;Lee, Young-Soon;Cho, Young-Ki
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.18 no.2 s.117
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    • pp.143-150
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    • 2007
  • A meander slot antenna with open-end fed by a microstrip line which can be used at 400 MHz ISM band is newly proposed. The main difference between the proposed slot antenna and the previous slot antenna is the introduction of the open-end to miniaturize the previous meander slot antenna in the space restricted within narrow limit. In order to check the validity of the proposed antenna, the resonant frequency and radiation pattern of the proposed antenna have been simulated and examined. Good agreements between simulated results and measured results have been observed.

Dual-Band Frequency Reconfigurable Small Eighth-Mode Substrate-Integrated Waveguide Antenna (이중 대역 주파수 가변 1/8차 소형 기판집적형 도파관 안테나)

  • Kang, Hyunseong;Lim, Sungjoon
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.25 no.1
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    • pp.10-18
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    • 2014
  • In this paper, we propose a new frequency reconfigurable dual-band antenna. By using an electronically compact eighth-mode substrate-integrated-waveguide(EMSIW) resonator, we have designed a compact antenna, which performs dual-band movement by additionally loading a complementary split ring resonator(CSRR) structure. The EMSIW and CSRR structures are designed to satisfy the bandwidths of 1.575 GHz(GPS) and 2.4 GHz(WLAN), respectively. We load the CSRR with a varactor diode to allow a narrow bandwidth and to enable the resonance frequency to continuously vary from 2.4 GHz to 2.5 GHz. Thus, we realize a channel selection function that is used in the WLAN standards. Irrespective of how a varactor diode moves, the EMSIW independently resonates so that the antenna maintains a fixed frequency of the GPS bandwidth even at different voltages. Consequently, as the DC bias voltage changes from 11.4 V to 30 V, the resonance frequency of the WLAN bandwidth continuously changes between 2.38 GHz and 2.5 GHz, when the DC bias voltage changes from 11.4 V to 30 V. We observe that the simulated and the measured S-parameter values and radiation patterns are in good agreement with each other.

Design of Broadband PIFA for PCS and IMT-2000 (PCS 및 IMT-2000용 광대역 PIFA 설계)

  • Lee, Jae-Hyang;Kim, Nam;Park, Ju-Derk
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.15 no.3
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    • pp.242-250
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    • 2004
  • In this thesis, a new broadband PIFA(Planar Inverted-F Antenna) for PCS and IMP-2000 applications is designed. The dual-L antenna structure is adopted in order to improve the characteristics of PIFA which usually has a narrow band. The height of the antenna is fixed 6 mm considering terminal's thickness and the structure is deformed into the folded radiation patches to minimize the size of the antenna. The bandwidth of a realized antenna is 1.66∼2.35 ㎓(34.5 %) fur return loss below -10 ㏈ which contain the required bandwidth of PCS and IMT-2000. And Monopole antenna with λ/4 length is designed and compared with dual-L with folded patch in SAR. 1 g and 10 g averaged peak SAR of PIFA are about 25.7 %, 30.3 % lower than those of monopole antenna respectively.

Design of a TM31 Higher Order Mode Half Circular-Ring Microstrip Patch Antenna for On-Body Communications (인체 표면 통신을 위한 TM31 고차 모드 반원-링 인체 부착형 마이크로스트립 패치 안테나 설계)

  • Tak, Jinpil;Jeon, Jaesung;Kim, Sunwoo;Choi, Jaehoon
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.25 no.5
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    • pp.491-503
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    • 2014
  • In this paper, a $TM_{31}$ higher order mode half circular-ring microstrip antenna with monopole-like radiation characteristic for on-body communication is proposed. By using shorting vias, $TM_{31}$ resonance mode was excited, while achieving compact low-profile antenna with monopole-like radiation characteristics. To overcome the narrow bandwidth of a patch antenna, a C-shape half ring patch with shorting vias having $TM_{31}$ mode is closely located around a half circular patch. For size reduction, half mode is adopted. The proposed antenna has the overall dimensions of $0.25{\lambda}_0{\times}0.46{\lambda}_0{\times}0.025{\lambda}_0$ at the industrial, scientific, and medical(ISM) 2.45 GHz band(2.4~2.485 GHz) and the 10-dB return loss is 4.24 % ranging from 2.38 to 2.49 GHz. To verify body effect, two-thirds muscle equivalent semi solid phantom was fabricated and used to measure the antenna performance. A communication link is analysed to investigate the effect of human-body movements and antenna locations.