• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.12
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• pp.1092-1100
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• 2005

We investigated a carbon nanotube (CNT) oscillator controlled by the thermal gas expansion using classical molecular dynamics simulations. When the temperature rapidly increased, the force on the CNT oscillator induced by the thermal gas expansion rapidly increased and pushed out the CNT oscillator. As the CNT oscillator extruded from the outer nanotube, the suction force on the CNT oscillator increased by the excess van der Waals(vdW) energy. When the CNT oscillator reached at the maximum extrusion point, the CNT oscillator was encapsulated into the outer nanotube by the suction force. Therefore, the CNT oscillator could be oscillated by both the gas expansion and the excess vdW interaction. As the temperature increased, the amplitude of the CNT oscillator increased. At the high temperatures, the CNT oscillator escaped from the outer nanotube, because the force on the CNT oscillator due to the thermal gas expansion was higher than the suction force due to the excess vdW energy. By the appropriate temperature controls, such as the maximum temperature, the heating rate, and the cooling rate, the CNT oscillator could be operated.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.51-57
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• 2008

we have demonstrated structural evolution and optical properties of Si-nanowires (NWs) synthesized on Si (111) substrates with nanoscale Au-Si islands by rapid thermal chemical vapor deposition (RTCVD). The Au-Si nano-islands (10-50nm in diameter) were employed as a liquid-droplet catalysis to grow Si-NWs via vapor-liquid-solid mechanism. The Si-NWs were grown by a mixture gas of SiH4 and H2 at a pressure of 1.0 Torr and temperatures of $500{\sim}600^{\circ}C$. Scanning electron microscopy measurements showed that the Si-NWs are uniformly sized and vertically well-aligned along <111> direction on Si (111) surfaces. The resulting NWs are ${\sim}60nm$ in average diameter and ${\sim}5um$ in average length. High resolution transmission microscopy measurements indicated that the NWs are single crystals covered with amorphous SiOx layers of ${\sim}3nm$ thickness. In addition, the optical properties of the NWs were investigated by micro-Raman spectroscopy. The downshift and asymmetric broadening of the Si main optical phonon peak were observed in Raman spectra of Si-NWs, which indicates a minute stress effects on Raman spectra due to a slight lattice distortion led by lattice expansion of Si-NW structures.