• Title/Summary/Keyword: Nanopipette

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Molecular Dynamics Simulations of Fullerene Nanostructure Fabrications by Atomic Force Microscope Carbon Nanotube tip (원자간력 현미경 탄소 나노튜브 팁을 이용한 플러렌 나노 구조물 제작에 관한 분자동역학 시뮬레이션)

  • 이준하;이홍주
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.8
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    • pp.812-822
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    • 2004
  • This paper shows that carbon nanotubes can be applied to a nanopipette. Nano space in atomic force microscope multi-wall carbon nanotube tips is filled with molecules and atoms with charges and then, the tips can be applied to nanopipette when the encapsulated media flow off under applying electrostatic forces. Since the nano space inside the tips can be refilled, the tips can be permanently used in ideal conditions of no chemical reaction and no mechanical deformation. Molecular dynamics simulations for nanopipette applications demonstrated the possibility of nano-lithography or single-metallofullerene-transistor array fabrication.

A Study of Nanostructure by Carbon Nanotube Simulation (탄소 나노튜브를 활용한 나노 구조물에 대한 시뮬레이션 연구)

  • Lee Jun Ha;Lee Hoong Joo;Song Young Jin;Yoon Young Sik
    • Journal of the Semiconductor & Display Technology
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    • v.4 no.3 s.12
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    • pp.11-15
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    • 2005
  • This paper shows that carbon nanotubes can be applied to a nanopipette. Nano space in atomic force microscope multi wall carbon nanotube tips is filled with molecules and atoms with charges and then, the tips can be applied to nanopipette when the encapsulated media flow off under applying electrostatic farces. Since the nano space inside the tips can be refilled, the tips can be permanently used in ideal conditions of no chemical reaction and no mechanical deformation. Molecular dynamics simulations for nanopipette applications demonstrated the possibility of nano-lithography or single-metallofullerene-transistor array fabrication.

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An Investigation of the Current Squeezing Effect through Measurement and Calculation of the Approach Curve in Scanning Ion Conductivity Microscopy (Scanning Ion Conductivity Microscopy의 Approach Curve에 대한 측정 및 계산을 통한 Current Squeezing 효과의 고찰)

  • Young-Seo Kim;Young-Jun Cho;Han-Kyun Shin;Hyun Park;Jung Han Kim;Hyo-Jong Lee
    • Journal of the Microelectronics and Packaging Society
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    • v.31 no.2
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    • pp.54-62
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    • 2024
  • SICM (Scanning Ion Conductivity Microscopy) is a technique for measuring surface topography in an environment where electrochemical reactions occur, by detecting changes in ion conductivity as a nanopipette tip approaches the sample. This study includes an investigation of the current response curve, known as the approach curve, according to the distance between the tip and the sample. First, a simulation analysis was conducted on the approach curves. Based on the simulation results, then, several measuring experiments were conducted concurrently to analyze the difference between the simulated and measured approach curves. The simulation analysis confirms that the current squeezing effect occurs as the distance between the tip and the sample approaches half the inner radius of the tip. However, through the calculations, the decrease in current density due to the simple reduction in ion channels was found to be much smaller compared to the current squeezing effect measured through actual experiments. This suggests that ion conductivity in nano-scale narrow channels does not simply follow the Nernst-Einstein relationship based on the diffusion coefficients, but also takes into account the fluidic hydrodynamic resistance at the interface created by the tip and the sample. It is expected that SICM can be combined with SECM (Scanning Electrochemical Microscopy) to overcome the limitations of SECM through consecutive measurement of the two techniques, thereby to strengthen the analysis of electrochemical surface reactivity. This could potentially provide groundbreaking help in understanding the local catalytic reactions in electroless plating and the behaviors of organic additives in electroplating for various kinds of patterns used in semiconductor damascene processes and packaging processes.