• 대한치과기공학회지
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• 제38권2호
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• pp.79-84
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• 2016

Purpose: The aim of this study was to make nanomesh on the surface of titanium by potentiostatic technique which was done at the suitable potential level. Methods: In order to find the suitable potential level, use a $25^{\circ}C$ NaCl, NaOH and NH4F solution of 1 M and 5 M as supporting electrolyte, working electrode(positive potential) was contact to the titanium specimen and counter electrode(negative potential) was contact to the Pt substrate. At the transpassive potential which was observed by potentiostatic technique, potentiostatic technique was done for 2hours. Results: As a result, 1 M NaOH solution was suitable as a supporting electrolyte, potentiostatic technique used a $25^{\circ}C$ NaOH solution of 1 M for 2hours, nanomesh was formed. Conclusion: The potentiostatic technique was used $25^{\circ}C$ NaOH solution of 1 M and 5 M as supporting electrolyte for 2hours. Nanomesh was built more uniform and fine in 1 M NaOH solution than 5 M NaOH solution.

• Tribology and Lubricants
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• 제36권6호
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• pp.315-319
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• 2020

In various fields, several studies based on carbon nanotubes (CNTs) have been conducted. The results of previous studies, wherein CNT coatings have been incorporated as solid lubricants, demonstrate that the friction and wear characteristics of CNT coatings can be improved through the absorption/dispersion of the contact pressure by controlling the stiffness of the nanomesh structure comprising CNT strands. In this study, the friction and wear characteristics of the following are compared: CNT coating formed by spin coating of CNT solution, compressed CNT coating, and compressed/heated CNT coating (wherein CNT strands are squeezed through compression and/or heating). It is observed that the friction coefficient of the CNT coating having the largest number of voids between the CNT strands is significantly lower than those of the compressed CNT coating and the compressed/heated CNT coating. The wear tracks of the compressed CNT coating and the compressed/heated CNT coating indicate that some parts become torn or adhere into a lump. However, in the case of the CNT coating, a smooth wear surface is formed by rubbing. Furthermore, as the void space between the squeezed and adhered CNT strands decreases, the resistance to structural deformation increases, thereby resulting in an increased frictional force and a wear pattern that becomes torn or forms a lump. Hence, the results obtained from this study corroborate that the friction and wear characteristics of CNT coatings can be enhanced through the absorption/dispersion of the contact pressure by controlling the stiffness of the nanomesh structure of CNT coatings.

• Bulletin of the Korean Chemical Society
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• 제30권6호
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• pp.1365-1367
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• 2009

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.658-658
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• 2013

Graphene is an attractive material for various device applications due to great electrical properties and chemical properties. However, lack of band gap is significant hurdle of graphene for future electrical device applications. In the past few years, several methods have been attempted to open and tune a band gap of graphene. For example, researchers try to fabricate graphene nanoribbon (GNR) using various templates or unzip the carbon nanotubes itself. However, these methods generate small driving currents or transconductances because of the large amount of scattering source at edge of GNRs. At 2009, Bai et al. introduced graphene nanomesh (GNM) structures which can open the band gap of large area graphene at room temperature with high current. However, this method is complex and only small area is possible. For practical applications, it needs more simple and large scale process. Herein, we introduce a photosensitive graphene device fabrication using CdSe QD coated nano-porous graphene (NPG). In our experiment, NPG was fabricated by thin film anodic aluminum oxide (AAO) film as an etching mask. First of all, we transfer the AAO on the graphene. And then, we etch the graphene using O2 reactive ion etching (RIE). Finally, we fabricate graphene device thorough photolithography process. We can control the length of NPG neckwidth from AAO pore widening time and RIE etching time. And we can increase size of NPG as large as 2 $cm^2$. Thin CdSe QD layer was deposited by spin coatingprocess. We carried out NPG structure by using field emission scanning electron microscopy (FE-SEM). And device measurements were done by Keithley 4200 SCS with 532 nm laser beam (5 mW) irradiation.

• 한국재료학회지
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• 제23권7호
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• pp.379-384
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• 2013

In order to produce size-controllable Ag nanoparticles and a nanomesh-patterned Si substrate, we introduce a rapid thermal annealing(RTA) method and a metal assisted chemical etching(MCE) process. Ag nanoparticles were self-organized from a thin Ag film on a Si substrate through the RTA process. The mean diameter of the nanoparticles was modulated by changing the thickness of the Ag film. Furthermore, we controlled the surface energy of the Si substrate by changing the Ar or $H_2$ ambient gas during the RTA process, and the modified surface energy was evaluated through water contact angle test. A smaller mean diameter of Ag nanoparticles was obtained under $H_2$ gas at RTA, compared to that under Ar, from the same thickness of Ag thin film. This result was observed by SEM and summarized by statistical analysis. The mechanism of this result was determined by the surface energy change caused by the chemical reaction between the Si substrate and $H_2$. The change of the surface energy affected on uniformity in the MCE process using Ag nanoparticles as catalyst. The nanoparticles formed under ambient Ar, having high surface energy, randomly moved in the lateral direction on the substrate even though the etching solution consisting of 10 % HF and 0.12 % $H_2O_2$ was cooled down to $-20^{\circ}C$ to minimize thermal energy, which could act as the driving force of movement. On the other hand, the nanoparticles thermally treated under ambient $H_2$ had low surface energy as the surface of the Si substrate reacted with $H_2$. That's why the Ag nanoparticles could keep their pattern and vertically etch the Si substrate during MCE.