• Journal of Ginseng Research
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• 제41권2호
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• pp.120-126
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• 2017

Background: The present study investigated the effect of ginseng berry hot water extract (GBx) on blood flow via the regulation of lipid metabolites and blood coagulation in rats fed a high-fat diet (HFD). Methods: Sixty rats were divided into five groups in descending order of body weight. Except for the control group, the other four groups were fed a HFD containing 45% kcal from fat for 11 wk without GBx. GBx groups were then additionally treated by gastric gavage with GBx dissolved in distilled water at 50 (GBx 50) mg/kg, 100 (GBx 100) mg/kg, or 150 (GBx 150) mg/kg body weight for 6 wk along with the HFD. To investigate the effects of GBx on rats fed a HFD, biochemical metabolite, blood coagulation assay, and histological analysis were performed. Results: In the experiments to measure the serum levels of leptin and apolipoprotein B/A, GBx treatment attenuated the HFD-induced increases in these metabolites (p < 0.05). Adiponectin and apolipoprotein E levels in GBx-treated groups were significantly higher than the HFD group. Prothrombin time and activated partial thromboplastin time were increased in all GBx-treated groups. In the GBx-treated groups, the serum levels of thromboxane $A_2$ and serotonin were decreased and concentrations of serum fibrinogen degradation products were increased (p < 0.05). Moreover, histomorphometric dyslipidemia-related atherosclerotic changes were significantly improved by treatment with GBx. Conclusion: These results suggest the possibility that GBx can ameliorate blood flow by decreasing intima-media thickness via the regulation of blood coagulation factors related to lipid metabolites in rats fed a HFD.

• 한국재료학회지
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• 제17권4호
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• pp.207-214
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• 2007

We fabricated thermally-evaporated 10 -Ni/(poly)Si and 10 -Ni/1 -Ir/(poly)Si structures to investigate the microstructure of nickel monosilicide at the elevated temperatures required for annealing. Silicides underwent rapid at the temperatures of 300-1200 for 40 seconds. Silicides suitable for the salicide process formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester was used to investigate the sheet resistances. A transmission electron microscope(TEM) and an Auger depth profile scope were employed for the determination of vertical section structure and thickness. Nickel silicides with iridium on single crystal silicon actives and polycrystalline silicon gates shoed low resistance up to 1000 and 800, respectively, while the conventional nickle monosilicide showed low resistance below 700. Through TEM analysis, we confirmed that a uniform, 20 -thick silicide layer formed on the single-crystal silicon substrate for the Ir-inserted case while a non-uniform, agglomerated layer was observed for the conventional nickel silicide. On the polycrystalline silicon substrate, we confirmed that the conventional nickel silicide showed a unique silicon-silicide mixing at the high silicidation temperature of 1000. Auger depth profile analysis also supports the presence of thismixed microstructure. Our result implies that our newly proposed iridium-added NiSi process may widen the thermal process window for the salicide process and be suitable for nano-thick silicides.

• 한국표면공학회지
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• 제43권1호
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• pp.25-30
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• 2010

Titanium and titanium alloys are widely used for orthopedic and dental implants for their superior mechanical properties, low modulus, excellent corrosion resistance and good biocompatibility. In this study, corrosion behaviors of nanotube formed on the bone plate of Ti-6Al-4V alloy for dental use have been investigated. $TiO_2$ nanotubes were formed on the dental bone plates by anodization in $H_3PO_4$ containing 0.6 wt % NaF solution at $25^{\circ}C$. Electrochemical experiments were performed using a conventional three-electrode configuration with a platinum counter electrode and a saturated calomel reference electrode. Anodization was carried out using a scanning potentiostat (EG&G Co, Model 263A USA), and all experiments were conducted at room temperature. The surface morphology was observed using field emission scanning electron microscopy (FE-SEM) and energy dispersive x-ray spectroscopy(EDS). The corrosion behavior of the dental bone plates was examined using potentiodynamic test(potential range of -1500~2000 mV) in a 0.9% NaCl solution by potentiostat (EG&G Co, PARSTAT 2273. USA). The inner diameter of nanotube was about 150~180 nm with wall thickness of about 20 nm. The interspace of nanotube to nanotube was 50 nm. The passive region of the nanotube formed bone plates showed the broad range compared to non-nanotube formed bone plates. The corrosion surface of sample was covered with corrosion products.

• Structural Engineering and Mechanics
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• 제44권4호
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• pp.431-448
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• 2012

In this paper, the first-order shear deformation theory (FSDT) (Mindlin) for continuum incorporating surface energy is exploited to study the static behavior of ultra-thin functionally graded (FG) plates. The size-dependent mechanical response is very important while the plate thickness reduces to micro/nano scales. Bulk stresses on the surfaces are required to satisfy the surface balance conditions involving surface stresses. Unlike the classical continuum plate models, the bulk transverse normal stress is preserved here. By incorporating the surface energies into the principle of minimum potential energy, a series of continuum governing differential equations which include intrinsic length scales are derived. The modifications over the classical continuum stiffness are also obtained. To illustrate the application of the theory, simply supported micro/nano scaled rectangular films subjected to a transverse mechanical load are investigated. Numerical examples are presented to present the effects of surface energies on the behavior of functionally graded (FG) film, whose effective elastic moduli of its bulk material are represented by the simple power law. The proposed model is then used for a comparison between the continuum analysis of FG ultra-thin plates with and without incorporating surface effects. Also, the transverse shear strain effect is studied by a comparison between the FG plate behavior based on Kirchhoff and Mindlin assumptions. In our analysis the residual surface tension under unstrained conditions and the surface Lame constants are expected to be the same for the upper and lower surfaces of the FG plate. The proposed model is verified by previous work.

• Corrosion Science and Technology
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• 제6권5호
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• pp.257-260
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• 2007

In order to further improve the corrosion resistance and wear resistance of the Ni-P coatings of electroless plating, electroless Ni-P/n-$Al_2O_3$ composite deposits were prepared by adding some nano $Al_2O_3$ Particles in Ni-P plating bath. The bath composition and proproties were studied in this paper. The orthogonal test was applied in order to get the new composite solution, taking the initial stable potential as evaluation standard and considering the elements correlation at the same time. The processing parameters have been optimized by single factor experiment in which the depositing speed was chosen as the evaluation standard. The results showed that the process is stable and the composite Ni-P/n-$Al_2O_3$ deposits werebright and smooth, whose hardness and corrosion resistance are much better than simple Ni-P coatings. Furthermore the surface appearance and structure of the composite Ni-P/n-$Al_2O_3$ coating were investigated by SEM and XRD method. It was proved that the coating surface is typical cystiform cells and its structure is amorphous. All test results ofcomposite coating showed that all various physical coating properties had been improved by adding nano-particles. The hardness of optimal coating is more than 600HV and increases to 1000HV after heat-treating, and its hardness is 20~50% higher than Ni-P coating. The rust points appeared in 200 hour by immersing the coating into the 10%HCl solution and the corrosive speed is $3{\times}10^{-3}mg/(cm^2{\cdot}h)$which was obtained after 300 hour. In the same condition Ni-P coating is $5.6{\times}10^{-3}mg/(cm^2{\cdot}h)$. The salt spray resistance of the layers can exceed 600h with the thickness $20{\mu}m$.

• 한국재료학회지
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• 제19권4호
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• pp.179-185
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• 2009

We fabricated thermally evaporated 30 nm-Ni/(20 nm or 60 nm)a-Si:H/Si films to investigate the energy-saving property of silicides formed by rapid thermal annealing (RTA) at temperatures of $350^{\circ}C$, $450^{\circ}C$, $550^{\circ}C$, and $600^{\circ}C$ for 40 seconds. A transmission electron microscope (TEM) and a high resolution X-ray diffractometer (HRXRD) were used to determine the cross-sectional microstructure and phase changes. A UVVIS-NIR and FT-IR (Fourier transform infrared spectroscopy) were employed for near-IR and middle-IR absorbance. Through TEM and HRXRD analysis, for the nickel silicide formed at low temperatures below $450^{\circ}C$, we confirmed columnar-shaped structures with thicknesses of $20{\sim}30\;nm$ that had ${\delta}-Ni^2Si$ phases. Regarding the nickel silicide formed at high temperatures above $550^{\circ}C$, we confirmed that the nickel silicide had more than 50 nm-thick columnar-shaped structures with a $Ni_{31}Si_{12}$ phase. Through UV-VIS-NIR analysis, nickel silicide showed almost the same absorbance in the near IR region as well as ITO. However, in the middle IR region, the nickel silicides with low temperature showed similar absorbance to those from high temperature silicidation.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2006년도 춘계종합학술대회
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• pp.869-872
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• 2006

본 연구에서는 나노구조 이중게이트 FinFET에 대하여 문턱전압이동 특성을 분석하였다. 분석을 위하여 분석학적 전류모델을 개발하였으며 열방사 전류 및 터널링 전류를 포함하였다. 열방사전류는 포아슨방정식에 의하여 구한 포텐셜분포 및 맥스월-볼쯔만통계를 이용한 캐리어분포를 이용하여 구하였으며 터널링전류는 WKB(Wentzel-framers-Brillouin)근사를 이용하였다. 이 두 모델은 상호 독립적이므로 각각 전류를 구해 더함으로써 문턱전압을 구하였다. 본 연구에서 제시한 모델을 이용하여 구한 문턱전압이동값이 이차원시뮬레이션값과 비교되었으며 잘 일치함을 알 수 있었다. 분석 결과 10nm이하에서 특히 터널링의 영향이 증가하여 문턱전압이동이 매우 현저하게 나타남을 알 수 있었다. 이러한 단채널현상을 감소시키기 위하여 채널두께 및 게이트산화막의 두께를 가능한한 얇게 제작하여야함을 알았으며 이를 위한 산화공정개발이 중요하다고 사료된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.511-511
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• 2007

Low-emissivity (low-e) coatings with visible transparency have attracted increased interest m reducing heat radiation loss through window panes from ecological and sustainable aspects. $TiO_2$-silver transparent thin films for low-e have good properties for UV and IR blocking as well as photocatalyst compared to that with commercial UV blocking films such as fluorine doped oxide (FTO), antimony doped tin oxide (ATO), etc. In this study, transparent $TiO_2$-silver thin films were prepared by successive ink-jet printing of commercial nano silver and $TiO_2$ sol. The $TiO_2$ sol, as ink for ink-jet printing, were synthesized by hydrothermal process in the autoclave externally pressurized with $N_2$ gas of 200 bar at $120^{\circ}C$ for 10 hrs. The synthesized $TiO_2$ sols were all formed with brookite phase and their particle size was several to 30 nm. At first nano sized silver sol was coated on glass substrate, after that $TiO_2$ sol was coated by ink-jet printing. With increasing coating thickness of $TiO_2$-silver multilayer by repeated ink-jet coating, the absorbance of UV region (under 400nm) and IR region (over 700nm) also increase reasonably, compared to that with commercial UV blocking films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.502-502
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• 2007

Current thin film process using memory device fabrication process use expensive processes such as manufacturing of photo mask, coating of photo resist, exposure, development, and etching. However, direct printing technology has the merits about simple and cost effective processes because inks are directly injective without mask. And also, this technology has the advantage about fabrication of fine pattern line on various substrates such as PCB, FCPB, glass, polymer and so on. In this work, we have fabricated the fine and thick metal pattern line for the electronic circuit board using metal ink contains Ag nano-particles. Metal lines are fabricated by two types of printing methods. One is a conventional printing method which is able to quick fabrication of fine pattern line, but has various difficulties about thick and high resolution DPI(Dot per Inch) pattern lines because of bulge and piling up phenomenon. Another(Second) methods is sequential printing method which has a various merits of fabrication for fine, thick and high resolution pattern lines without bulge. In this work, conductivities of metal pattern line are investigated with respect to printing methods and pattern thickness. As a result, conductivity of thick pattern is about several un.

• 한국전기전자재료학회논문지
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• 제20권4호
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• pp.308-317
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• 2007

We fabricated thermally-evaporated 10 nm-Ni/(poly)Si and 10 nm-$Ni_{0.5}Co_{0.5}$/(Poly)Si structures to investigate the microstructure of nickel silicides at the elevated temperatures required lot annealing. Silicides underwent rapid annealing at the temperatures of $600{\sim}1100^{\circ}C$ for 40 seconds. Silicides suitable for the salicide process formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester was used to investigate the sheet resistances. A transmission electron microscope and an Auger depth profilescope were employed for the determination of vortical microstructure and thickness. Nickel silicides with cobalt on single crystal silicon actives and polycrystalline silicon gates showed low resistance up to $1100^{\circ}C$ and $900^{\circ}C$, respectively, while the conventional nickle monosilicide showed low resistance below $700^{\circ}C$. Through TEM analysis, we confirmed that a uniform, $10{\sim}15 nm$-thick silicide layer formed on the single-crystal silicon substrate for the Co-alloyed case while a non-uniform, agglomerated layer was observed for the conventional nickel silicide. On the polycrystalline silicon substrate, we confirmed that the conventional nickel silicide showed a unique silicon-silicide mixing at the high silicidation temperature of $1000^{\circ}C$. Auger depth profile analysis also supports the presence of this mixed microstructure. Our result implies that our newly proposed NiCo-alloy composite silicide process may widen the thermal process window for the salicide process and be suitable for nano-thick silicides.