• Tribology and Lubricants
• /
• v.26 no.1
• /
• pp.14-20
• /
• 2010

Tribological properties of nanoporous structured alumina film was investigated. Alumina film (AAO: anodic aluminum oxide) of $60{\mu}m$ thickness having nanopores of 45 nm diameter with 105 nm interpore-diatance was fabricated by mild anodization process. Reciprocating ball-on-flat sliding friction tests using 1 mm diameter steel ball as a counterpart were carried out with wide range of normal load from 1 mN to 1 N in an ambient environment. The morphology of worn surfaces were analyzed using scanning electron microscopy. The friction coefficient was strongly influenced by the applied normal load. Smooth layer patches were formed on the worn surface of both AAO and steel ball at relatively high load (100 mN and 1 N) due to tribochemical reaction and compaction of wear debris. These tribolayers contributed to the lower friction at high loads. Extremely thin layer patches, due to mild plastic deformation of surface layer, were sparsely distributed on the worn surface of AAO at low loads (1 mN and 10 mN) without the evidence of tribochemical reaction. Delaminated wear particles were generated at high loads by fatigue due to repeated loading and sliding.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.41 no.6
• /
• pp.1-7
• /
• 2004

We performed two-dimensional (20) computer-based modeling and simulation of FinFET by solving the coupled Poisson-Schrodinger equations quantum-mechanically in a self-consistent manner. The simulation results are carefully investigated for FinFET with gate length(Lg) varying from 10 to 80nm and with a Si-fin thickness($T_{fin}$) varying from 10 to 40nm. Current-voltage (I-V) characteristics are compared with the experimental data. Device optimization has been performed in order to suppress the short-channel effects (SCEs) including the sub-threshold swing, threshold voltage roll-off, drain induced barrier lowering (DIBL). The quantum-mechanical simulation is compared with the classical appmach in order to understand the influence of the electron confinement effect. Simulation results indicated that the FinFET is a promising structure to suppress the SCEs and the quantum-mechanical simulation is essential for applying nano-scale device structure.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.14 no.11
• /
• pp.5930-5938
• /
• 2013

The sigmoid functionally graded mateiral(S-FGM) theory is reformulated using the nonlocal elatictiry of Erigen. The equation of equilibrium of the nonlocal elasticity are derived. This theory has ability to capture the both small scale effects and sigmoid function in terms of the volume fraction of the constituents for material properties through the plate thickness. Navier's method has been used to solve the governing equations for all edges simply supported boundary conditions. Numerical solutions of biaxial buckling of nano-scale plates are presented using this theory to illustrate the effects of nonlocal theory and power law index of sigmoid function on buckling load. The relations between nonlocal and local theories are discussed by numerical results. Further, effects of (i) power law index, (ii) length, (iii) nonlocal parameter, (iv) aspect ratio and (v) mode number on nondimensional biaxial buckling load are studied. To validate the present solutions, the reference solutions are discussed.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.254-254
• /
• 2011

The memories with nano-particles are very attractive because they are promising candidates for low operating voltage, long retention time and fast program/erase speed. In recent, various nano-floating gate memories with metal-oxide nanocrystals embedded in organic and inorganic layers have been reported. Because of the carrier generation in semiconductor, induced photon pulse enhanced the program/erase speed of memory device. We studied photo-induced electrical properties of these metal-oxide nanocrystal memory devices. At first, 2~10-nm-thick Sn and In metals were deposited by using thermal evaporation onto Si wafer including a channel with $n^+$ poly-Si source/drain in which the length and width are 10 ${\mu}m$ each. Then, a poly-amic-acid (PAA) was spin coated on the deposited Sn film. The PAA precursor used in this study was prepared by dissolving biphenyl-tetracarboxylic dianhydride-phenylene diamine (BPDA-PDA) commercial polyamic acid in N-methyl-2-pyrrolidon (NMP). Then the samples were cured at 400$^{\circ}C$ for 1 hour in N atmosphere after drying at 135$^{\circ}C$ for 30 min through rapid thermal annealing. The deposition of aluminum layer with thickness of 200 nm was followed by using a thermal evaporator, and then the gate electrode was defined by photolithography and etching. The electrical properties were measured at room temperature using an HP4156a precision semiconductor parameter analyzer and an Agilent 81101A pulse generator. Also, the optical pulse for the study on photo-induced electrical properties was applied by Xeon lamp light source and a monochromator system.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.132-132
• /
• 2011

For the programming volume of PRAM, Ge2Sb2Te5(GST) thin films have been dominantly used and prepared by physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD). Among these methods, ALD is particularly considered as the most promising technique for the integration of PRAM because the ALD offers a superior conformality to PVD and CVD methods and a digital thickness control precisely to the atomic level since the film is deposited one atomic layer at a time. Meanwhile, although the IST has been already known as an optical data storage material, recently, it is known that the IST benefits multistate switching behavior, meaning that the IST-PRAM can be used for mutli-level coding, which is quite different and unique performance compared with the GST-PRAM. Therefore, it is necessary to investigate a possibility of the IST materials for the application of PRAM. So far there are many attempts to deposit the IST with MOCVD and PVD. However, it has not been reported that the IST can be deposited with the ALD method since the ALD reaction mechanism of metal organic precursors and the deposition parameters related with the ALD window are rarely known. Therefore, the main aim of this work is to demonstrate the ALD process for IST films with various precursors and the conformal filling of a nano size programming volume structure with the ALD?IST film for the integration. InSbTe (IST) thin films were deposited by ALD method with different precursors and deposition parameters and demonstrated conformal filling of the nano size programmable volume of cell structure for the integration of phase change random access memory (PRAM). The deposition rate and incubation time are 1.98 A/cycle and 25 cycle, respectively. The complete filling of nano size volume will be useful to fabricate the bottom contact type PRAM.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.68-68
• /
• 2011

As feature size is smaller, new technology are needed in semiconductor factory such as gap-fill technology for sub 100nm, development of ALD equipment for Cu barrier/seed, oxide trench etcher technology for 25 nm and beyond, development of high throughput Cu CMP equipment for 30nm and development of poly etcher for 25 nm and so on. We are focus on gap-fill technology for sub-30nm. There are many problems, which are leaning, over-hang, void, micro-pore, delaminate, thickness limitation, squeeze-in, squeeze-out and thinning phenomenon in sub-30 nm gap fill. New gap-fill processes, which are viscous oxide-SOD (spin on dielectric), O3-TEOS, NF3 Based HDP and Flowable oxide have been attempting to overcome these problems. Some groups investigated SOD process. Because gap-fill performance of SOD is best and process parameter is simple. Nevertheless these advantages, SOD processes have some problems. First, material cost is high. Second, density of SOD is too low. Therefore annealing and curing process certainly necessary to get hard density film. On the other hand, film density by Flowable oxide process is higher than film density by SOD process. Therefore, we are focus on Flowable oxide. In this work, dielectric film were deposited by PECVD with TSA(Trisilylamine - N(SiH3)3) and NH3. To get flow-ability, the effect of plasma treatment was investigated as function of O2 plasma power. QMS (quadruple mass spectrometry) and FTIR was used to analysis mechanism. Gap-filling performance and flow ability was confirmed by various patterns.

• Journal of Powder Materials
• /
• v.27 no.5
• /
• pp.406-413
• /
• 2020

Ti_0.5Al_0.5N/CrN nano-multilayers, which are known to exhibit excellent wear resistances, were prepared using the unbalanced magnetron sputter for various periods of 2-7 nm. Ti_0.5Al_0.5N and CrN comprised a cubic structure in a single layer with different lattice parameters; however, Ti_0.5Al_0.5N/CrN exhibited a cubic structure with the same lattice parameters that formed the superlattice in the nano-multilayers. The Ti_0.5Al_0.5/CrN multilayer with a period of 5.0 nm exceeded the hardness of the Ti_0.5Al_0.5N/CrN single layer, attaining a value of 36 GPa. According to the low-angle X-ray diffraction, the Ti_0.5Al_0.5N/CrN multilayer maintained its as-coated structure up to 700℃ and exhibited a hardness of 32 GPa. The thickness of the oxidation layer of the Ti_0.5Al_0.5N/CrN multilayered coating was less than 25% of that of the single layers. Thus, the Ti_0.5Al_0.5N/CrN multilayered coating was superior in terms of hardness and oxidation resistance as compared to its constituent single layers.

• Journal of the Korean institute of surface engineering
• /
• v.41 no.2
• /
• pp.57-62
• /
• 2008

Electrochemical properties of Ti-30Ta-$(3{\sim}15)$Nb alloys coated by HA/Ti compound layer have been studied by various electrochemical method. Ti-30Ta binary alloys contained 3, 7, 10, and 15 wt% Nb contents were manufactured by the vacuum furnace system. The specimens were homogenized for 24 hrs at $1000^{\circ}C$. The samples were cut and polished for corrosion test and coating. It was coated with HA/Ti compound layer by magnetron sputter. The HA/Ti non-coated and coated morphology of Ti alloy were analyzed by x-ray diffractometer(XRD) and filed emission scanning electron microscope(FE-SEM). The corrosion behaviors were investigated using potentiodynamic method in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. The homoginazed Ti-30Ta-$(3{\sim}15wt%$)Nb alloys showed the ${\alpha}+{\beta}$ phase, and ${\beta}$ phase peak was predominantly appeared with increasing Nb content. The microstructure of Ti alloy was transformed from needle-like structure to equiaxed structure as Nb content increased. HA/Ti composite surface showed uniform coating layer with 750 nm thickness. The corrosion resistance of HA/Ti composite coated Ti-alloys were higher than those of the non-coated samples in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. Especially, corrosion resistance of Ti-Ta-Nb system increased as Nb content increased.

• Composites Research
• /
• v.33 no.2
• /
• pp.55-60
• /
• 2020

A study on the heating behavior and adhesion property of structural epoxy adhesive through induction heating have been conducted. An adhesive for induction heating was manufactured through mixing with nano and micro sized Fe₃O₄. From the results, it was observed that induction heating is less affected by adherend (GFRP) thickness than oven heating. The heating rate of Fe₃O₄ embedded epoxy adhesive using induction heating much higher than that of oven curing process and it is more appreciable when the contents of Fe₃O₄ increased. Furthermore, adhesion strength increased with increase of Fe₃O₄ particle contents.

• Journal of the Korean Ceramic Society
• /
• v.50 no.4
• /
• pp.301-307
• /
• 2013

SiC hollow fiber was fabricated by curing, dissolution and sintering of Al-PCS fiber, which was melt spun the polyaluminocarbosilane. Al-PCS fiber was thermally oxidized and dissolved in toluene to remove the unoxidized area, the core of the cured fiber. The wall thickness ($t_{wall}$) of Al-PCS fiber was monotonically increased with an increasing oxidation curing time. The Al-PCS hollow fiber was heat-treated at the temperature between 1200 and $2000^{\circ}C$ to make a SiC hollow fibers having porous structure on the fiber wall. The pore size of the fiber wall was increased with the sintering temperature due to the decomposition of the amorphous $SiC_xO_y$ matrix and the growth of ${\beta}$-SiC in the matrix. At $1400^{\circ}C$, a nano porous wall with a high specific surface area was obtained. However, nano pores grew with the grain growth after the thermal decomposition of the amorphous matrix. This type of SiC hollow fibers are expected to be used as a substrate for a gas separation membrane.