• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.318-318
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• 2012

A graphene layer is most important materials in resent year to enhance the electrical properties of semiconductor device due to high mobility, flexibility, strong mechanical resistance and transparency[1,2]. The resistance switching memory with the graphene layer have been reported for next generation nonvolatile memory device[3,4]. Also, the graphene layer is able to improve the electrical properties of memory device because of the high mobility and current density. In this study, the resistance switching memory device with metal-oxide nano-particles embedded in polyimide layer on the graphene mono-layer were fabricated. At first, the graphene layer was deposited $SiO_2$/Si substrate by using chemical vapor deposition. Then, a biphenyl-tetracarboxylic dianhydride-phenylene diamine poly-amic-acid was spin coated on the deposited metal layer on the graphene mono-layer. Then the samples were cured at $400^{\circ}C$ for 1 hour in $N_2$ atmosphere after drying at $135^{\circ}C$ for 30 min through rapid thermal annealing. The deposition of aluminum layer with thickness of 200 nm was done by a thermal evaporator. The electrical properties of device were measured at room temperature using an HP4156a precision semiconductor parameter analyzer and an Agilent 81101A pulse generator. We will discuss the switching mechanism of memory device with metal-oxide nano-particles on the graphene mono-layer.

• Transactions of the Korean hydrogen and new energy society
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• v.17 no.1
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• pp.39-46
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• 2006

Highly ordered Li dispersed nickel oxide nanotubes were prepared with anodic aluminum oxide (AAO) template for hydrogen storage. Electron microscope results showed that uniform length and diameter of nickel oxide nanotubes were obtained. The wall thickness and outer diameter of nickel oxide nanotubes are about 40 - 50 nm and 200 - 400 nm, respectively. It was observed that the diameter of nickel oxide nanotubes is bigger than the pore diameter of AAO template. Li dispersed nickel oxide were consisted of nanoflakes and had structures of nanotubes and nanorods. For increasing the hydrogen adsorption and desorption capacity, the Li dispersed nickel oxide nanotubes were fluorinated. The fluorinated Li dispersed nickel oxide nanotubes showed 1.65 wt% of the hydrogen adsorption capacities at 77 K under 47 atm.

• Journal of the Semiconductor & Display Technology
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• v.5 no.2 s.15
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• pp.47-49
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• 2006

Various methods of making thin film is being used in semiconductor manufacturing process. The most common method in this field includes CVD(Chemical Vapor Deposition) and PVD(Physical Vapor Deposition). Thin film is deposited on both the backside and the frontside of wafers. The thin film deposited on the backside has poor thickness profile, and can contaminate wafers in the following processes. If wafers with the thin film remaining on the backside are immersed in batch type process tank, the thin film fall apart from the backside and contaminate the nearest wafer. Thus, it is necessary to etch the backside of the wafer selectively without etching the frontside, and chemical injection nozzle positioned under the wafer can perform the backside etching. In this study, the backside chemical injection nozzle with optimized chemical injection profile is built for single wafer tool. The evaluation of this nozzle, performed on $Si_3N_4$ layer deposited on the backside of the wafer, shows the etching rate uniformity of less than 5% at the etching rate of more than $1000{\AA}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.12
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• pp.1075-1079
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• 2005

The Pseudo MOSFET measurements technique has been used for the electrical characterization of the nano SOI wafer. Silicon islands for the Pseudo MOSFET measurements were fabricated by selective etching of surface silicon film with dry or wet etching to examine the effects of the etching process on the device properties. The characteristics of the Pseudo MOSFET were not changed greatly in the case of thick SOI film which was 205 nm. However the characteristics of the device were dependent on etching process in the case of less than 100 nm thick SOI film. The sub 100 nm SOI was obtained by thinning the silicon film of standard thick SOI wafer. The thickness of SOI film was varied from 88 nm to 44 nm by chemical etching. The etching process effects on the properties of pseudo MOSFET characteristics, such as mobility, turn-on voltage, and drain current transient. The etching Process dependency is greater in the thinner SOI wafer.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.7
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• pp.999-1005
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• 2004

A new stamp fabrication technique for the soft lithography has been developed in the range of several microns by means of a nano-replication printing (nRP) process. In the nRP process, a figure or a pattern can be replicated directly from a two-tone bitmap figure with nano-scale details. A photopolymerizable resin was polymerized by the two-photon absorption which was induced by a femtosecond laser. After the polymerization of master patterns, a gold metal layer (about 30 ㎚ thickness) was deposited on the fabricated master patterns for the purpose of preventing a join between the patterns and the PDMS, then the master patterns were transferred in order to fabricate a stamp by using the PDMS (poly-dimethylsiloxane). In the transferring process, a few of gold particles, which were isolated from the master patterns, remained on the PDMS stamp. A gold selective etchant, the potassium iodine (KI) was employed to remove the needless gold particles without any damage to the PDMS stamp. Through this work, the effectiveness of the nRP process with the PDMS molding was evaluated to make the PDMS stamp with the resolution of around 200 ㎚.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.12
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• pp.1115-1119
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• 2014

In this article, a 20 kHz ultrasonic waveguide for nano-surface treatment was designed and manufactured. When designing the system, finite element analysis with ANSYS software was performed to find optimal dimensions of the waveguide, which can raise energy efficiency. Consequently an anti-resonance frequency of an Al waveguide with a piezoelectric actuator was 20 kHz, which predicted the experimentally obtained value of 18 kHz well. For the assessment of the performance, Steel Use Stainless (SUS) 304 and chromium molybdenum steel (SCM) 435 specimens were tested. Cross-sectional microscopies of SUS304 were taken and they showed that the treated thickness was $30{\mu}m$. Additionally, hardness tests of SCM435 were done and the hardness before the process was 14.0 Rockwell Hardness-C scale (HRC) and after the process was 20.5 HRC, respectively, which means 46% increase. Considering these results, the developed ultrasonic system is thought to be effective in the nano-surface treatment process.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1154-1155
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• 2008

본 연구에서는 전자 주개 물질(electron donor)인 regioregular poly(3-hexylthiophene)(P3HT)와 전자 받개 물질(electron acceptor)인 phenyl-$C_{61}$-butyric acid methyl ester (PCBM)을 혼합한 복합 박막 구조(Bulk Heterojunction)를 이용하여 태양전지를 제작하고 광활성층(Active layer)의 두께를 변화시키면서 광학적 특성 및 전기적 특성에 대해 분석하였다. 광활성층의 두께가 두꺼워 질수록 광흡수율이 높기 때문에 태양전지의 효율이 증가하여 200nm정도의 두께에서 가장 좋은 특성을 보였으며, 그 이상의 두께에서는 광흡수율이 높더라도 직렬저항(Series resistance)의 증가로 개방 회로 전압이 감소하는 것을 볼 수 있었으며, 최적화된 광활성층의 두께(190nm)에서 개방 회로 전압($V_{oc}$)은 0.6V, 단락 회로 전류($J_{sc}$)는 8.29mA, Fill factor(FF)는 0.59, 전력변환효율($\eta$)은 2.94%였다.

• Structural Engineering and Mechanics
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• v.63 no.2
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• pp.161-169
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• 2017

In this paper, using consistent couple stress theory and Hamilton's principle, the free vibration analysis of Euler-Bernoulli nano-beams made of bi-directional functionally graded materials (BDFGMs) with small scale effects are investigated. To the best of the researchers' knowledge, in the literature, there is no study carried out into consistent couple-stress theory for free vibration analysis of BDFGM nanostructures with arbitrary functions. In addition, in order to obtain small scale effects, the consistent couple-stress theory is also applied. These models can degenerate into the classical models if the material length scale parameter is taken to be zero. In this theory, the couple-tensor is skew-symmetric by adopting the skew-symmetric part of the rotation gradients as the curvature tensor. The material properties except Poisson's ratio are assumed to be graded in both axial and thickness directions, which it can vary according to an arbitrary function. The governing equations are obtained using the concept of Hamilton principle. Generalized differential quadrature method (GDQM) is used to solve the governing equations for various boundary conditions to obtain the natural frequencies of BDFG nano-beam. At the end, some numerical results are presented to study the effects of material length scale parameter, and inhomogeneity constant on natural frequency.

• Steel and Composite Structures
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• v.26 no.6
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• pp.663-672
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• 2018

This paper contains a consistent couple-stress theory to capture size effects in Euler-Bernoulli nano-beams made of three-directional functionally graded materials (TDFGMs). These models can degenerate into the classical models if the material length scale parameter is taken to be zero. In this theory, the couple-stress tensor is skew-symmetric and energy conjugate to the skew-symmetric part of the rotation gradients as the curvature tensor. The material properties except Poisson's ratio are assumed to be graded in all three axial, thickness and width directions, which it can vary according to an arbitrary function. The governing equations are obtained using the concept of minimum potential energy. Generalized differential quadrature method (GDQM) is used to solve the governing equations for various boundary conditions to obtain the natural frequencies of TDFG nano-beam. At the end, some numerical results are performed to investigate some effective parameter on buckling load. In this theory the couple-stress tensor is skew-symmetric and energy conjugate to the skew-symmetric part of the rotation gradients as the curvature tensor.

• Journal of the Korean institute of surface engineering
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• v.40 no.1
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• pp.32-38
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• 2007

Ni coating layers were formed using a newly developed electroless Ni plating solution. The properties of Ni coating layer such as internal stress, hardness, surface roughness, crystallinity, solderability and surface morphology were investigated using various tools. Results revealed that internal stress decreased with plating time and reached $40N/mm^2$ at 20 minutes of the plating time. Hardness increased with increasing P content and thickness. Surface roughness of the pad decreased with Ni and Ni/Au plating. Crystallinity decreased with increasing P content. Solderability based on wettability decreased with Ni and Ni/Au plating. Based on surface morphology, it is expected that Ni coating layer formed using a newly developed electroless Ni plating solution is lower than that formed using a commercial electroless Ni plating solution in possibility of black pad occurrence.