• Steel and Composite Structures
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• v.52 no.6
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• pp.621-626
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• 2024

The work researched the application of artificial intelligence to the design and analysis of advanced nanoplates, with a particular emphasis on size and surface effects. Employing an integrated theoretical framework, this study developed a more accurate model of complex nanoplate behavior. The following analysis considers nanoplates embedded in a Pasternak viscoelastic fractional foundation and represents the important step in understanding how nanoscale structures may respond under dynamic loads. Surface effects, significant for nanoscale, are included through the Gurtin-Murdoch theory in order to better describe the influence of surface stresses on the overall behavior of nanoplates. In the present analysis, the modified couple stress theory is utilized to capture the size-dependent behavior of nanoplates, while the Kelvin-Voigt model has been incorporated to realistically simulate the structural damping and energy dissipation. This paper will take a holistic approach in using sinusoidal shear deformation theory for the accurate replication of complex interactions within the nano-structure system. Addressing different aspectsof the dynamic behavior by considering the length scale parameter of the material, this work aims at establishing which one of the factors imposes the most influence on the nanostructure response. Besides, the surface stresses that become increasingly critical in nanoscale dimensions are considered in depth. AI algorithms subsequently improve the prediction of the mechanical response by incorporating other phenomena, including surface energy, material inhomogeneity, and size-dependent properties. In these AI- enhanced solutions, the improvement of precision becomes considerable compared to the classical solution methods and hence offers new insights into the mechanical performance of nanoplates when applied in nanotechnology and materials science.

• Asia-Pacific Journal of Business Venturing and Entrepreneurship
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• v.8 no.1
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• pp.1-11
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• 2013

The femto fusion technology refers to not only the technology for femtosecond($10^{-15}$ second) laser and but also the fusion technology of its application. This technology is comparable to the nano technology, the extreme technology on the space, and is of extreme time-domain technology. Now, we need to develop the hyperfine and high-precision femto fusion process technology which allows to miniaturize and highly integrate the products of mobile, semiconductor and display industries, the national main focusing growth industries. However, The femtosecond laser fabrication technology is essential in the development of fusion technology, but only a few of domestic researchers can handle the former. Under this condition, our government plans to develop the "femto fusion technology infrastructure project" as one of the ICT research infrastructure. So the purpose of this study is to analyze the feasibility of this project. We applied AHP(analytic hierarchy process) for this study. The final result shows that all the repondent's score is over 0.55 and the aggregated score is 0.846. And as a consequence, we can conclude that to do this project is feasible.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.134-134
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• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.1
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• pp.20-26
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• 2015

Ceramic ink-jet printing technology in art tiles, decorated tablewares and other porcelain products has many advantages of fast and precision printing of various images with high efficiency and low cost. For the application to ink-jet printing, ceramic ink requires a stable dispersibility with nano-sized pigments. In this paper, characteristics of pink-red aqueous ceramic ink for ink-jet printing was demonstrated. $CaCr_{0.1}Sn_{0.8}SiO_5$ pigment was synthesized using solid state reaction and deagglomerated using attrition milling. The aqueous ceramic ink contains 10 wt% of the obtained $CaCr_{0.1}Sn_{0.8}SiO_5$ nanopigment with 0.4 wt% of sodium dodecyl sulfate (SDS) as a dispersion agent. Viscosity of $CaCr_{0.1}Sn_{0.8}SiO_5$ aqueous ceramic ink was adjusted using 0.18 wt% of polyvinyl alcohol (PVA) for a suitable jetting from the nozzle. The prepared pink-red ceramic ink showed a good jetting property with formation of a single sphere-shaped droplet after $180{\mu}s$ without a tail and satellite droplet.