• 한국전기전자재료학회논문지
• /
• 제26권11호
• /
• pp.841-845
• /
• 2013

We give a textured front on silicon wafer for high-efficiency solar cells by using micro contact printing method which uses PDMS (polydimethylsiloxane) silicon rubber as a stamp and SAM (self assembled monolayer)s as an ink. A random pyramidal texturing have been widely used for a front-surface texturing in low cost manufacturing line although the cell with random pyramids on front surface shows relatively low efficiency than the cell with inverted pyramids patterned by normal optical lithography. In the past two decades, the micro contact printing has been intensively studied in nano technology field for high resolution patterns on silicon wafer. However, this promising printing technique has surprisingly never applied so far to silicon based solar cell industry despite their simplicity of process and attractive aspects in terms of cost competitiveness. We employ a MHA (16-mercaptohexadecanoic acid) as an ink for Au deposited $SiO_2/Si$ substrate. The $SiO_2$ pattern which is same as the pattern printed by SAM ink on Au surface and later acts as a hard resist for anisotropic silicon etching was made by HF solution, and then inverted pyramidal pattern is formed after anisotropic wet etching. We compare three textured surface with different morphology (random texture, random pyramids and inverted pyramids) and then different geometry of inverted pyramid arrays in terms of reflectivity.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2009년도 춘계학술발표대회
• /
• pp.24.2-24.2
• /
• 2009

Nanostuctures such as nanodot and nanowire have been extensively studied as building blocks for nanoscale devices. However, the direct growth of the nanostuctures at the desired position is one of the most important requirements for realization of the practical devices with high integrity. Self-assembled nanotemplate is one of viable methods to produce highly-ordered nanostructures because it exhibits the highly ordered nanometer-sized pattern without resorting to lithography techniques. And selective epitaxial growth (SEG) can be a proper method for nanostructure fabrication because selective growth on the patterned openings obtained from nanotemplate can be a proper direction to achieve high level of control and reproducibility of nanostructucture fabrication. Especially, SiGe has led to the development of semiconductor devices in which the band structure is varied by the composition and strain distribution, and nanostructures of SiGe has represented new class of devices such nanowire metal-oxide-semiconductor field-effect transistors and photovoltaics. So, in this study, various shaped SiGe nanostructures were selectively grown on Si substrate through ultrahigh vacuum chemical vapor deposition (UHV-CVD) of SiGe on the hexagonally arranged Si openings obtained using nanotemplates. We adopted two types of nanotemplates in this study; anodic aluminum oxide (AAO) and diblock copolymer of PS-b-PMMA. Well ordered and various shaped nanostructure of SiGe, nanodots and nanowire, were fabricated on Si openings by combining SEG of SiGe to self-assembled nanotemplates. Nanostructure fabrication method adopted in this study will open up the easy way to produce the integrated nanoelectronic device arrays using the well ordered nano-building blocks obtained from the combination of SEG and self-assembled nanotemplates.

• 한국재료학회지
• /
• 제15권9호
• /
• pp.589-593
• /
• 2005

Nanoimprinting lithography (NIL) is known as a suitable technique for fabricating nano and micro structures of high definition. Hot embossing is one of NIL techniques and can imprint on thin films and bulk polymers. Key issues of hot embossing are time and expense needed to produce a stamp withstanding a high temperature and pressure. Fabrication of a metal stamp such as an electroplated nickel is cost intensive and time consuming. A ceramic stamp made by silicon is easy to break when the pressure is applied. In this paper, a plastic stamp using a high temperature epoxy was fabricated and tested. The plastic stamp was relatively inexpensive, rapid to produce and durable enough to withstanding multiple hot embossing cycles. The merits of low viscosity epoxy solutions were a fast degassing and a rapid filling the microstructures. The hot embossing process with plastic stamp was performed on PMMA substrates. The hot embossing was conducted at 12.6 bar, $120^{\circ}C$ and 10 minutes. An imprinted PMMA wafer was almost same value of the plastic stamp after 10 times embossing. Entire fabrication process from silicon master to plastic stamp was completed within 12 hours.

• 마이크로전자및패키징학회지
• /
• 제30권2호
• /
• pp.13-20
• /
• 2023

마이크로 전자기계 시스템 공정에서 표면 처리는 공정 방법의 일환이자 디바이스에 자체적인 기능을 부여하는 역할을 한다. 특히 자기 조립 단분자층은 마이크로 전자기계 시스템 공정에서 표면 개질 및 기능화를 수행하는 표면처리 방법으로 침지 시간과 용액 농도에 따라 강도를 정밀하게 조절할 수 있는 유기 단분자막이다. 고분자 기판이나 금속/세라믹 부품에 자발적으로 흡착되어 형성되는 자기 조립 단분자층은 표면 특성의 개질 뿐만 아니라 나노스케일 단위의 높은 정밀도로 하여금 양산용 리소그래피 기술 및 초민감 유기/생체분자 센서에도 응용되고 있다. 본 논문에서는 마찰 특성의 조절부터 생체 분자의 탐침 기능까지 자기 조립 단분자층 기술이 발전되어 응용되고 있는 다양한 분야들에 대해 소개한다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.362-362
• /
• 2010

Today, vast attention has been paid to periodic arrays of nanostructures due to their potential for applications such as memory with huge storage density. Such application requires large-scale fabrication of well ordered nano-sized structures. One of the most widely used methods for the ordered nanostructures is lithography. This top-down process, however, has the limit to reduce size. Here the promising alternative is the self-organization of ordered nano-sized structures such as large scale 2d carbon-induced reconstructions on W(110). In the present study, we report on the first well-resolved atomic resolution STM studies of the well-known R($15{\times}3$) and R($15{\times}12$) carbon induced reconstruction of the W(110). From the atomic image of R($15{\times}3$) for different values of tunneling gap resistance, we can tell there are no missing atoms in unit cells of R($15{\times}3$) and some atomic displacements are substantial from the clean W(110), even though not all the imaged position of atoms correspond to tungsten, but may include those of carbon. We are considering two cases; First case is related to lattice deformation, or top layer of W(110) is deformed in the process of relief of strain caused by random inserting of carbon atoms possibly in the interstitial position. In the second case, R($15{\times}3$) unit cell results from a coincidence lattice between clean W(110) substrate and tungsten carbide overlayer which has rectangular atomic arrangement and giving R($15{\times}3$) coincidence lattice. beta-W2C showing rectangular unit cell should be a candidate. Further, we report on new reconstructions. Unlike the well-known R($15{\times}12$) consisting of two parts, two inner structures between two "Backbone" structures. The new reconstruction, which we found for the first time, contains more parts between the "Backbone"s. Sometimes we can observe the reconstruction consists of only inner parts without "Backbone" parts. Thus, the observed reconstruction can be built by constructing of two types of "Lego"-like block. Moreover, the rectangle shape of "Backbone" transform to parallelogram-like shape over time, the so-called wavy-R($15{\times}12$). Adsorption of hydrogen can be the reason for this transformation.

• 공업화학
• /
• 제31권5호
• /
• pp.539-544
• /
• 2020

본 연구에서는 넓은 면적의 나노필라 배열 필름을 기반으로 포토 및 소프트 리소그래피 기술과 화학적 희석 고분자 중합을 조절하여 3차원 다공성의 폴리아닐린 필름을 제조하였다. 3차원 폴리아닐린 필름은 계층 간 연결된 폴리아닐린 나노파이버들로 구성되어 있어, 넓은 표면적과 개방형의 다공성 구조를 가지는 3차원 계층형 나노웹 필름을 형성한다. 전기화학분석법을 기반으로 3차원 폴리아닐린 필름이 유연한 pH 센서 전극이 되는 것을 증명하였다. 3차원 폴리아닐린 필름은 이상적인 네른스트 거동과 근접한 60.3 mV/pH의 높은 민감도를 보였다. 또한, 3차원 폴리아닐린 전극은 10 min의 빠른 반응 속도, 우수한 반복성 그리고 높은 선택성을 나타내었다. 3차원 폴리아닐린 전극을 기계적으로 굽힌 상태에서 센서 특성을 측정하였을 때, 전극이 60.4 mV/pH의 높은 민감도를 보여줌으로써, 유연한 pH 센서 성능을 증명하였다.

• 한국자기학회지
• /
• 제17권4호
• /
• pp.156-161
• /
• 2007

어레이(away) 자성센서 개발을 위해 고진공 스퍼터링 증착장비를 이용하여 스펙큘러형(specular type) Glass/Ta(5)/NiFe(7)/IrMn(10)/NiFe(5)/$O_2$/CoFe(5)/Cu(2.6)/CoFe(5)/$O_2$/NiFe(7)/Ta(5)(nm) 거대자기저항-스핀밸브(giant magnetoresistive-spin valves; CMR-SV)박막을 제작하였다. 다층박막 시료를 $20{\times}80{\mu}m^2$의 미세 활성영역을 가진 15개 어레이를 $8{\times}8mm^2$ 영역 내에 최적화한 제작 조건으로 광 리소그래피 패터닝 하였다. Cu를 증착하여 만든 2단자 전극법으로 측정한 자성특성은 15개 모든 소자들이 균일한 자기저항특성을 나타내었고, 5 Oe 근방에서 가장 민감한 자기저항비 자장민감도와 출력전압들은 각각 0.5%/Oe, ${\triangle}$V: 3.9 mV이었다. 형상자기이방성이 적용된 상부 자유층 $CoFe/O_2/NiFe$층은 하부 고정 자성층 $IrMn/NiFe/O_2/CoFe$층 자화 용이축과 직교하였다. 측정시 인가전류 값을 각각 1 mA에서 10 mA까지 인가하였을 때 출력 작동 전압 값은 균일하게 증가하였으며, 자장감응도도 거의 일정하여 미세 외부자장에 민감한 나노자성소자로서 좋은 특성을 띠었다.