• Title/Summary/Keyword: Nano-ink

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Studies on electrokinetic motion of FULLERENE/POLYSTYRENE microparticles in liquid crystal medium for electronic paper displays (전자종이 제작을 위한 FULLERENE/POLYSTYRENE microparticles의 움직임연구)

  • Kim, Mi-Young;Kim, Kun-Ji;Kim, Sung-Min;Jo, Eun-Mi;Srivastava, Anoop Kumar;Jung, Jun-Ho;Ji, Seung-Hoon;Lee, Myong-Hoon;Lee, Seung-Hee;Lee, Gi-Dong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.341-342
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    • 2008
  • The dynamics of nano particles in LC medium under an external electric field is of theoretical and technological interest. In this work, the dynamical characteristics of fullerene $(C_{60})$ particles in liquid crystal (LC) medium under dc electric field have been investigated. This effect was studied for homogeneously aligned nematic LC cells driven by in-plane field. The $C_{60}$ was found to be aggregated in a form of cluster inside the LC medium. Hence polystytene was used to protect the aggregation of $C_{60}$ in LC medium. When the electric field was applied, the fullerenes start to move in direction of applied electric field. The density of $C_{60}$'s particles at the electrodes increase with increase in the value of applied electric field. The dynamical motions of fullerene $(C_{60})$ particles in liquid crystal (LC) suggest that fullerene can be designed for electrophoretic displays (i.e., electronic ink).

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Recent Advances in Eco-friendly Nano-ink Technology for Display and Semiconductor Application (디스플레이 반도체 기술 적용을 위한 청정 나노잉크 제조 기술)

  • Kim, Jong-Woong;Hong, Sung-Jei;Kim, Young-Seok;Kim, Young-Sung;Lee, Jeong-No;Kang, Nam-Kee
    • Journal of the Microelectronics and Packaging Society
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    • v.17 no.1
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    • pp.33-39
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    • 2010
  • Printing technologies have been indicated as alternative methods for patterning conductive, semi-conductive or insulative materials on account of their low-cost, large-area patternability and pattern flexibility. For application of the printing technologies in manufacture of semiconductor or display modules, ink or paste composed of nanoparticles, solvent and additives are basically needed. Here, we report recent advances in eco-friendly nano-ink technology for semiconductor and display technology. Then, we will introduce an eco-friendly ink formation technology developed in our group with an example of manufacturing $SiO_2$ nanopowders and inks. We tried to manufacture ultrafine $SiO_2$ nanoparticles by applying a low-temperature synthetic method, and then attempted to fabricate the printed $SiO_2$ film onto the glass substrate to see whether the $SiO_2$ nanoparticles are feasible for the printing or not. Finally, the electrical characteristics of the films were measured to investigate the effect of the manufacturing parameters.

Pentacene Thin-Film Transistor with PEDOT:PSS S/D Electrode by Ink-jet Printing Method (잉크젯 프린팅 방법을 이용한 Pentacene 박막 트랜지스터의 제작 및 특성 분석)

  • Kim, Jae-Kyoung;Kim, Jung-Min;Lee, Hyun Ho;Yoon, Tae-Sik;Kim, Yong-Sang
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.1277-1278
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    • 2008
  • Pentacene 박막 트랜지스터의 소스/드레인 전극을 폴리머인 Poly(3,4-ethylene dioxythiophene) poly(styrenesulfonate) (PEDOT:PSS)를 사용하여 잉크젯 프린팅 방법으로 제작하였다. 펜타신 박막 트랜지스터는 열 증착법을 사용하여 폴리며 기판위에 100nm의 두께로 증착하였다. 게이트 절연막은 $SiO_2$ 위에 Polymethly Methacrylate (PMMA)를 증착시킨 double layer를 사용하였다. PMMA 위에 증착시킨 pentacene 결정립이 $SiO_2$ 위에 증착한 pentacene 결정립 보다 크게 성장하였고, double layer의 절연막을 씀으로 인해 게이트 누설 전류가 감소함을 보였다. Pentacene 증착 온도에 따른 결정립 크기를 비교하여 가장 적절한 온도를 찾았다. 프린팅 방법을 사용하여 만든 박막 트랜지스터는 전계효과 이동도가 ${\mu}_{FET}=0.023cm^2/Vs$ 이고, 문턱이전 기울기 S.S=0.49V/dec, 문턱전압 $V_{th}=-18V$, $I_{on}/I_{off}$ 전류비 >$10^3$의 전기적 특성을 보였다.

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Wool Dyeing with Sepia Melanin (세피아 멜라닌에 의한 양모 염색)

  • Kim, Su-Jin;Kwon, Hye-Ryun;Yoo, Jung-Hwa;Jang, Jin-Ho
    • Textile Coloration and Finishing
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    • v.22 no.1
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    • pp.14-20
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    • 2010
  • Squid ink was purified to melanin powder by repeated treatments with aqueous sodium hydroxide and acetic acid solutions. The exhaustion dyeing conditions of melanin to wool fabrics were investigated in relation with pH, melanin concentration, dyeing temperature and time. The melanin was dyeable to cotton and wool fabrics but higher dyeability of the wool was observed. A K/S of 7 was obtained on the optimally dyed wool fabrics with 5 % owf melanin under pH 4 at $100^{\circ}C$ for 60 minutes. Color fastness to both washing and rubbing was excellent and color fastness to light was also very good probably due to the polymeric nature of the extracted sepia melanin.

A Study on Flow Characteristics of Fountain-pen Nano-Lithography with Active Membrane Pumping (능동적 박막 펌핑에 의한 파운틴 펜 나노 리소그래피 유동 특성에 관한 연구)

  • Lee Jin-Hyoung;Lee Young-Kwan;Lee Sung-Kun;Lee Suk-Han;Kim Youn-Jea;Kim Hun-Mo
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.30 no.8 s.251
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    • pp.722-730
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    • 2006
  • In this study, the flow characteristics of a FPN (Fountain Pen Nano-Lithography) using active membrane pumping are investigated. The FPN has integrated chamber, micro channel, and high capacity reservoir for continuous ink feed. The most important aspect in this probe provided control of fluid injection using active membrane pumping in chamber. The flow rates in channel by capillary force are theoretically analyzed, including the control of the mass flow rates by the deflection of the membrane. The above results are compared with the numerical simulations that calculated by commercial code, FLUENT. The velocity of the fluid in micro channel shows linear behaviors. And the mass flows are proportional to the second order function of the pumping pressure that is imposed to the membrane.

Pentacene Thin Film Transistors with Various Polymer Gate Insulators

  • Kim, Jae-Kyoung;Kim, Jung-Min;Yoon, Tae-Sik;Lee, Hyun-Ho;Jeon, D.;Kim, Yong-Sang
    • Journal of Electrical Engineering and Technology
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    • v.4 no.1
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    • pp.118-122
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    • 2009
  • Organic thin film transistors with a pentacene active layer and various polymer gate insulators were fabricated and their performances were investigated. Characteristics of pentacene thin film transistors on different polymer substrates were investigated using an atomic force microscope (AFM) and x-ray diffraction (XRD). The pentacene thin films were deposited by thermal evaporation on the gate insulators of various polymers. Hexamethyldisilazane (HMDS), polyvinyl acetate (PVA) and polymethyl methacrylate (PMMA) were fabricated as the gate insulator where a pentacene layer was deposited at 40, 55, 70, 85, 100 oC. Pentacene thin films on PMMA showed the largest grain size and least trap concentration. In addition, pentacene TFTs of top-contact geometry are compared with PMMA and $SiO_2$ as gate insulators, respectively. We also fabricated pentacene TFT with Poly (3, 4-ethylenedioxythiophene)-Polysturene Sulfonate (PEDOT:PSS) electrode by inkjet printing method. The physical and electrical characteristics of each gate insulator were tested and analyzed by AFM and I-V measurement. It was found that the performance of TFT was mainly determined by morphology of pentacene rather than the physical or chemical structure of the polymer gate insulator

Synthesis of Concentrated Cu-Ag Nano Sol for Ink-Jet Method

  • Park, Han-Sung;Choi, Young-Min;Ryu, Beyong-Hwan
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1370-1373
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    • 2006
  • The Cu-Ag nanoparticles have been synthesized in aqueous medium using a hydrazine reduction method. The assisted role of polymeric dispersant on synthesis of highly concentrated Cu-Ag nanoparticles was studied. The 30wt% of Cu-Ag nanoparticles with the range of 10 nm in diameter was prepared.

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Vat dyeing of Wool and Cotton fabrics with Sepia Melanin

  • Kim, Su-Jin;Jang, Jin-Ho
    • Textile Coloration and Finishing
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    • v.22 no.2
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    • pp.88-93
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    • 2010
  • Using extracted sepia melanin powder by repeated treatments with aqueous sodium hydroxide and acetic acid solutions, vat dyeing of wool and cotton fabrics was carried out under various dyeing conditions including concentration of melanin, alkali, reducing agent and salt, as well as dyeing time and temperature. A K/S of 25.3 for wool fabrics was obtained at the optimal dyeing condition with 9% owf melanin, 0.5g/L NaOH and 56g/L $Na_2S_2O_4$ without salt at $80^{\circ}C$ for 90minutes. The vat dyeing of sepia melanin was applicable to both cotton and wool fabrics but the wool showed higher dyeability. The color fastness properties of the dyed wool and cotton fabrics were excellent to washing, rubbing and light irradiation.

Thin Film Transistor fabricated with CIS semiconductor nanoparticle

  • Kim, Bong-Jin;Kim, Hyung-Jun;Jung, Sung-Mok;Yoon, Tae-Sik;Kim, Yong-Sang;Choi, Young-Min;Ryu, Beyong-Hwan;Lee, Hyun-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1494-1495
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    • 2009
  • Thin Film Transistor(TFT) having CIS (CuInSe) semiconductor layer was fabricated and characterized. Heavily doped Si was used as a common gate electrode and PECVD Silicon nitride ($SiN_x$) was used as a gate dielectric material for the TFT. Source and drain electrodes were deposited on the $SiN_x$ layer and CIS layer was formed by a direct patterning method between source and drain electrodes. Nanoparticle of CIS material was used as the ink of the direct patterning method.

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