• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.4
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• pp.145-149
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• 2016

The effect of process parameters such as plasma composition, ICP (Inductively Coupled Plasma) source power and rf chuck power on the etch characteristics of GaN epitaxy layer was studied. $Cl_2/Ar$ ICP discharges showed higher etch rates than $SF_6/Ar$ discharges because of the higher volatility of $GaCl_x$ etch products than $GaF_x$ compounds. As the Ar ratio increases in the $Cl_2/Ar$ ICP discharges, the etch anisotropy was enhanced due to the improved physical component of the etching. For both plasma chemistries, the GaN etch rate increased continuously as both the ICP source power and rf chuck power increased, and a maximum etch rate of 251.9 nm/min was obtained at $13Cl_2/2Ar$, 750W ICP power, 400W rf chuck power and 10 mTorr condition.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.5
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• pp.251-255
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• 2009

Nanocomposites based on coupling $TiO_2$ matrix with nanosized noble metals (Pt,Au) particles exhibited promising photoelectrode properties. The $M/TiO_2$ (M=Pt,Au) nanocomposite thin films were deposited on quartz and ITO glass substrates using a co-sputtering method. $TiO_2$ in rutile form is the dominant crystalline phase for as-deposited nanocomposite films. Along with heat treatment up to $600^{\circ}C$, XRD peaks of the rutile phase as well as those of noble metal increased in intensity and decreased in width, indicating the growth of crystallites. The anodic photocurrents of $M/TiO_2$ (M=Au,Pt) thin films were observed not only in the UV range but also in the visible light range. The photocurrent of the nanocomnosite films extended to the visible light region by dispersion of nano-sized noble metal in the $TiO_2$ matrix.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.6
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• pp.289-294
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• 2017

Films fabricated using atomic layer 2-dimensional nanosheets exhibit various physical properties depending on the size of the nanosheet. This is because the physical properties of the film depend on the interfacial properties between the sheets. Therefore, the synthesis of large-sized nanosheets is very important because it can reduce the dependency of the film on the interfacial properties. In this study, we succeeded in fabricating $TiO_x$ nanosheets with atomic layer thickness over micrometer size by using single-crystallized starting material and its chemical exfoliation. In addition, it was revealed that the mechanical agitation speed (the stirring speed of a magnetic bar) during the exfoliation step using the organic material is closely related to the nanosheet size and the colloidal concentration of the nanosheets.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.6
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• pp.245-250
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• 2019

We investigated the post-annealing effect of Sn-incorporated β-Ga₂O₃ (β-Ga₂O₃ : Sn) nanowires (NWs) grown on sapphire (0001) substrates using radio-frequency powder sputtering. The β-Ga₂O₃ : Sn NWs were converted to a porous structure during the vacuum annealing process at 800℃. Host non-stoichiometric Ga₂O_3-x, is transformed into stoichiometric Ga₂O₃, where Sn atoms separate and form Sn nano-clusters that gradually evaporate in a vacuum atmosphere. As a result, the amount of Sn atoms was reduced from 1.31 to 0.27 at%. Pores formed on the sides of β-Ga₂O₃ : Sn NWs were observed. This increases the ratio of the surface to the volume of β-Ga₂O₃ : Sn NWs.

• Journal of the Korean Ceramic Society
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• v.51 no.3
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• pp.156-161
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• 2014

Gallium oxide ($Ga_2O_3$) powders were synthesized using a precipitation method and a polymerized complex method. TG-DSC, SEM, and XRD were performed to investigate the phase and morphology of the $Ga_2O_3$. In situ high-temperature XRD analysis revealed the crystal structure of $Ga_2O_3$ at different temperatures. The $Ga_2O_3$ obtained using the precipitation method and polymerized complex method were generally spherical-shaped particles and their average particle size was approximately 80 nm and $1{\mu}m$, respectively. The crystal structure of the $Ga_2O_3$ prepared by the precipitation method was changed from rhombohedral to monoclinic at $700^{\circ}C$, while monoclinic $Ga_2O_3$ was obtained directly from the precursor by the polymerized complex method.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.1
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• pp.33-40
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• 2014

Poly vinylidene fluoride-co-hexafluoropropylene (PVdF-HFP) membrane were prepared by the electrospinning technique. We had applied a DLC coating process and then the surface of the membrane and the contact angle change was investigated. Electrospun fibrous PVdF-HFP membrane surface became to wrinkled shape by Ar plasma treatment and treatment conditions. The wrinkled surface of PVdF-HFP membrane became super-hydrophilic. However, after DLC coating process, it became super-hydrophobic. The resulting surfaces were characterized by water contact angle measurement, X-ray photoelectron spectroscopy (XPS) and field emission scanning electron microscopy (FE-SEM). Resultantly it was recognized that the wettability characteristics of the membrane surfaces depended on the chemical composition and surface morphology.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.1
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• pp.1-7
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• 2014

Aluminum nitride, which has outstanding properties such as high thermal conductivity and electrical resistivity, has been received a great attention as a substrate and packaging material of semiconductor devices. Since aluminum nitride has a high sintering temperature of 2173 K and its properties depends on the impurity level, it is necessary to synthesize high-purity and nano-sized aluminum nitride powders for the applications. In this research, we synthesized high purity aluminum nitride nanopowders from aluminum using RF induction thermal plasma system. Sheath gas (NH3) flow was controlled to establish the synthesis condition of high purity aluminum nitride nanopowders. The obtained aluminum nitride nanopowders were evaluated by XRD, SEM, TEM, BET, FTIR and N-O analysis.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.2
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• pp.101-107
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• 2013

Cerium compounds such as Cerium hydroxide ($Ce(OH)_3$), Cerium chloride ($CeCl_3{\cdot}nH_2O$), Cerium carbonate hydrate ($Ce_2(CO_3)_3{\cdot}8H_2O$), Cerium oxide ($CeO_2$) were synthesized using recycled Ce precursor. Cerium(IV) oxide of nanoparticles were obtained by Ultra-sonication. Cerium-sodium- sulfate compound was synthesized through acid-leaching and addition of sodium sulfate from 99 wt% purity of Ce precursor as a starting material that was recycled from the waste polishing slurry. Moreover Cerium hydroxide was obtained from Cerium-sodium-sulfate compound by adding to sodium hydroxide solution. Then Cerium chloride was synthesized by adding of hydrochloric acid to Cerium hydroxide. Needle-shaped Cerium carbonate hydrate was synthesized in the continuous process and Cerium(IV) oxide with 30~40 nm size was subsequently obtained by the calcinations and dispersion.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.5
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• pp.175-180
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• 2016

ZnO nanoparticles were synthesized by aqueous preparation routes of a precipitation and a hydrothermal process. In the processes, the powders were formed by mixing aqueous solutions of Zn-nitrate hexahydrate ($Zn(NO_3)_2{\cdot}6H_2O$) with NaOH aqueous solution under controlled reaction conditions such as Zn precursor concentration, reaction pH and temperature. Single ZnO phase has been obtained under low Zn precursor concentration, high reaction pH and high temperature. The synthesized particles exhibited flakes (plates), multipods or rods morphologies and the crystallite sizes and shapes would be efficiently controllable by changing the processing parameters. The hydrothermal method showed advantageous features over the precipitation process, allowing the precipitates of single ZnO phase with higher crystallinity at relatively low temperatures below $100^{\circ}C$ under a wider pH range for the Zn precursor concentration of 0.1~1 M.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.6
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• pp.263-270
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• 2018

Recently, porous ceramic materials with anti-static performance are urgently needed for semiconductor and OLED/LCD display manufacturing industry. In this work, we fabricated porous titanium manganese oxide ceramics having the surface resistivity of $10^8-10^{10}$ ohm and enhanced mechanical strength by partial sintering method using nanosized titanium oxide. By addition of nano-sized titanium oxide in the matrix, neck formation between grains was strengthened, which remarkably increased flexural strength up to 170 MPa (@porosity: 15 %), 110 MPa (@porosity: 31 %), compared to 80 MPa (@porosity: 26 %) for pristine titanium manganese oxide ceramics. We evaluated the performances of our ceramics as air-floating module for OLED flexible display manufacturing devices.