• Korean Journal of Materials Research
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• v.29 no.1
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• pp.59-64
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• 2019

This study investigates the optical characteristics of InGaN multiple quantum wells(MQWs) light emitting diodes(LEDs) on planar sapphire substrates(PSSs), nano-sized PSS(NPSS) and micro-sized PSS(MPSS). We obtain the results as the patterning size of the sapphire substrates approach the nanometer scale: The light from the back side of the device increases and the total light extraction becomes larger than the MPSS- and planar-LEDs. The experiment is conducted by Monte Carlo ray-tracing, which is regarded as one of the most suitable ways to simulate light propagation in LEDs. The results show fine consistency between simulation and measurement of the samples with different sized patterned substrates. Notably, light from the back side becomes larger in the NPSS LEDs. We strongly propose that the increase in the light intensity of NPSS LEDs is due to an abnormal optical distribution, which indicates an increase of extraction probability through NPSS.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.3.2-3.2
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• 2011

In recent years, inkjet printing technology has received significant attention as a micro/nanofabrication technique for flexible printing of electronic circuits and solar cells, as well for biomaterial patterning. It eliminates the need for physical masks, causes fewer environment problems, lowers fabrication costs, and offers good layer-to-layer registration. To fulfill the requirements for use in the above applications, however, the inkjet system must meet certain criteria such as high frequency jetting, uniform droplet size, high density nozzle array, etc. Existing inkjet devices are either based on thermal bubbles or piezoelectric pumping; they have several drawbacks for flexible printing. For instance, thermal bubble jetting has limitations in terms of size and density of the nozzle array as well as the ejection frequency. Piezoelectric based devices suffer from poor pumping energy in addition to inadequate ejection frequency. Recently, an electrohydrodynamic (EHD) printing technique has been suggested and proposed as an alternative to thermal bubble or piezoelectric devices. In EHD jetting, a liquid (ink) is pumped through a nozzle and a strong electric field is applied between the nozzle and an extractor plate, which induce charges at the surfaces of the liquid meniscus. This electric field creates an electric stress that stretches the meniscus in the direction of the electric field. Once the electric field force is larger than the surface tension force, a liquid droplet is formed. An EHD inkjet head can produce droplets smaller than the size of the nozzle that produce them. Furthermore, the EHD nano-inkjet can eject high viscosity liquid through the nozzle forming tiny structures. These unique features distinguish EHD printing from conventional methods for sub-micron resolution printing. In this presentation, I will introduce the recent research results regarding the EHD nano-inkjet and the printing system, which has been applied to solar cell or thin film transistor applications.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.2 s.233
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• pp.228-231
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• 2005

In this paper, we present reusable quartz master fabricated by electron-beam lithography and dry etching process of quartz, and results of injection molding based on the reusable quartz master for the manufacturing of nano-scale information media. Since patterned structures of photoresist can be easily damaged by separation (demolding) process of nickel stamper and master, a master with photoresist cannot be reused in stamper fabrication process. In this work, we have made it possible of the repeated use of master by directly patterning on quart in nickel stamper fabrication process. We have designed and fabricated four different specimens including 100nm, 140nm 200nm and 400nm pit patterns. In addition, both intaglio and embossed carving patterns are fabricated for each specimen. In the preliminary test of injection molding, we have fabricated polycarbonate patterns with varying mold temperature. We have experimentally verified the fabrication process of the reusable quart master and possibility of quartz master as direct stamper.

• Transactions on Electrical and Electronic Materials
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• v.9 no.4
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• pp.163-168
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• 2008

Photonic crystal structures have been received considerable attention due to their high optical sensitivity. One of the techniques to construct their structure is the dip-pen lithography (DPN) process, which requires a nano-scale resolution and high reliability. In this paper, we propose a two dimensional photonic crystal array to improve the sensitivity of optical biosensor and DPN process to realize it. As a result of DPN patterning test, we have observed that the diffusion coefficient of the mercaptohexadecanoic acid (MHA) molecule ink in octanol is much larger than that in acetonitrile. In addition, we have designed and fabricated optical waveguides based on the mach-zehnder interferometer (MZI) for application to biosensors. The waveguides were optimized at a wavelength of 1550 nm and fabricated according to the design rule of 0.45 delta%, which is the difference of refractive index between the core and clad. The MZI optical waveguides were measured of the optical characteristics for the application of biosensor.

• Korean Journal of Optics and Photonics
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• v.16 no.3
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• pp.235-238
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• 2005

A Multiple electron beam lithography system with arrayed microcolumns has been developed for high throughput applications. The small size of the microcolumn opens the possibility for arrayed operation on a scale commensurate. The arrayed microcolumns based on of Single Column Module (SCM) concept has been fabricated and successfully demonstrated. Low energy microcolumn lithography has been operated in the energy range from 250 eV to 300 eV for the generation of nano patterns. Probe beam current at the sample was measured about >1 nA at a total beam current of $0.5\;{\mu}A$ and a working distance of $\~1\;mm$. The magnitude of probe beam current is strong enough for the low energy lithography. The thin layers of PMMA resist have been employed. The results of nano-patterning by low energy microcolumn lithography will be discussed.

• Transactions of Materials Processing
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• v.18 no.3
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• pp.268-273
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• 2009

Ultraviolet nanoimprint lithography (UV-NIL), which is performed at a low pressure and at room temperature, is known as a low cost method for the fabrication of nano-scale patterns. In the patterning process, maintaining the uniformity of the residual layer is critical as the pattern transfer of features to the substrate must include the timed etch of the residual layer prior to the etching of the transfer layer. In pursuit of a thin and uniform residual layer thickness, the initial volume and the position of each droplet both need to be optimized. However, the monomer mixtures of resin had a tendency to evaporate. The evaporation rate depends on not only time, but also the initial volume of the monomer droplet. In order to decide the initial volume of each droplet, the accurate prediction of evaporation behavior is required. In this study, the theoretical model of the evaporation behavior of resin droplets was developed and compared with the available experimental data in the literature. It is confirmed that the evaporation rate of a droplet is not proportional to the area of its free surface, but to the length of its contact line. Finally, the parameter of the developed theoretical model was calculated by curve fitting to decide the initial volume of resin droplets.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.132-132
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• 2010

In the nano-scale Si processing, patterning processes based on multilevel resist structures becoming more critical due to continuously decreasing resist thickness and feature size. In particular, highly selective etching of the first dielectric layer with resist patterns are great importance. In this work, process window for the infinitely high etch selectivity of silicon oxynitride (SiON) layers and silicon nitride (Si3N4) with EUV resist was investigated during etching of SiON/EUV resist and Si3N4/EUV resist in a CH2F2/N2/Ar dual-frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters, such as the CH2F2 and N2 flow ratio and low-frequency source power (PLF). It was found that the CH2F2/N2 flow ratio was found to play a critical role in determining the process window for ultra high etch selectivity, due to the differences in change of the degree of polymerization on SiON, Si3N4, and EUV resist. Control of N2 flow ratio gave the possibility of obtaining the ultra high etch selectivity by keeping the steady-state hydrofluorocarbon layer thickness thin on the SiON and Si3N4 surface due to effective formation of HCN etch by-products and, in turn, in continuous SiON and Si3N4 etching, while the hydrofluorocarbon layer is deposited on the EUV resist surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.32-32
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• 2011

Plasma etching is used in microelectronic processing for patterning of micro- and nano-scale devices. Commonly, optical emission spectroscopy (OES) is widely used for real-time endpoint detection for plasma etching. However, if the viewport for optical-emission monitoring becomes blurred by polymer film due to prolonged use of the etching system, optical-emission monitoring becomes impossible. In addition, when the exposed area ratio on the wafer is small, changes in the optical emission are so slight that it is almost impossible to detect the endpoint of etching. For this reason, as a simple method of detecting variations in plasma without contamination of the reaction chamber at low cost, a method of measuring plasma impedance is being examined. The object in this research is to investigate the suitability of using plasma impedance monitoring (PIM) with statistical approach for real-time endpoint detection of $SiO_2$ etching. The endpoint was determined by impedance signal variation from I-V monitor (VI probe). However, the signal variation at the endpoint is too weak to determine endpoint when $SiO_2$ film on Si wafer is etched by fluorocarbon plasma on inductive coupled plasma (ICP) etcher. Therefore, modified principal component analysis (mPCA) is applied to them for increasing sensitivity. For verifying this method, detected endpoint from impedance analysis is compared with optical emission spectroscopy (OES). From impedance data, we tried to analyze physical properties of plasma, and real-time endpoint detection can be achieved.

• Journal of the Korean institute of surface engineering
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• v.56 no.2
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• pp.115-124
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• 2023

Anodization is an electrochemical process that electrochemically converts a metal surface into an oxide layer, resulting in enhanced corrosion resistance, wear resistance, and improved aesthetic appearance. Local anodization, also known as selective anodization, is a modified process that enables specific regions or patterns on the metal surface to undergo anodization instead of the entire surface. Several methods have been attempted to produce oxide layers via localized anodic oxidation, such as using a mask or pre-patterned substrate. However, these methods are often intricate, time-consuming, and costly. Conversely, the direct writing or patterning approach is a more straightforward and efficient way to fabricate the oxide layers. This review paper intends to enhance our comprehension of local anodization and its potential applications in various fields, including the development of nanotechnologies. The application of anodization is promising in surface engineering, where the anodic oxide layer serves as a protective coating for metals or modifies the surface properties of materials. Furthermore, anodic oxidation can create micro- and nano-scale patterns on metal surfaces. Overall, the development of efficient and cost-effective anodic oxidation methods is essential for the advancement of various industries and technologies.

• Journal of the Korean Vacuum Society
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• v.13 no.1
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• pp.39-45
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• 2004

Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. A 5${\times}$5${\times}$0.09 in. quartz stamp is fabricated using the etch process in which a Cr film was employed as a hard mask for transferring nanostructures onto the quartz plate. FAS(Fluoroalkanesilane) is used as a material for anti-adhesion surface treatment on the stamp and a thin organic film to improve adhesion on a wafer is formed by spin-coating. The low viscosity resin droplets with a nanometer scale volume are dispensed on the whole area of the coated wafer. The UV-NIL experiments have been performed using the EVG620-NIL. 370 nm - 1 m features on the stamp have been transferred to the thin resin layer on the wafer using the multi-dispensing method and UV-NIL process. We have measured the imprinted patterns and residual layer using SEM and AFM to evaluate the potential of the process.