• Title/Summary/Keyword: Nano tungsten

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Nano Yttrium-90 and Rhenium-188 production through medium medical cyclotron and research reactor for therapeutic usages: A Simulation study

  • Abdollah Khorshidi
    • Nuclear Engineering and Technology
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    • v.55 no.5
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    • pp.1871-1877
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    • 2023
  • The main goal of the coordinated project development of therapeutic radiopharmaceuticals of Y-90 and Re-188 is to exploit advancements in radionuclide production technology. Here, direct and indirect production methods with medium reactor and cyclotron are compared to evaluate derived neutron flux and production yield. First, nano-sized 186W and 89Y specimens are suspended in water in a quartz vial by FLUKA simulation. Then, the solution is irradiated for 4 days under 9E+14 n/cm2/s neutron flux of reactor. Also, a neutron activator including three layers-lead moderator, graphite reflector, and polyethylene absorbent- is simulated and tungsten target is irradiated by 60 MeV protons of cyclotron to generate induced neutrons for 188W and 90Sr production via neutron capture. As the neutron energy reduced, the flux gradually increased towards epithermal range to satisfy (n/2n,γ) reactions. The obtained specific activities at saturation were higher than the reported experimental values because the accumulated epithermal flux and nano-sized specimens influence the outcomes. The beta emitters, which are widely utilized in brachytherapy, appeal an alternative route to locally achieve a rational yield. Therefore, the proposed method via neutron activator may ascertain these broad requirements.

Passivation of organic light emitting diodes with a-$SiN_x$ thin films grown by catalyzer enhanced chemical vapor deposition

  • Jeong, Jin-A;Kang, Jae-Wook;Kim, Han-Ki
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.659-662
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    • 2007
  • The characteristics of a $SiN_x$ passivation layer grown by a specially designed catalyzer enhanced chemical vapor deposition (CECVD) system and electrical and optical properties of OLEDs passivated with the $SiN_x$ layer are described. Despite the low substrate temperature, the single $SiN_x$ passivation layer, grown on the PC substrate, exhibited a low water vapor transmission rate of $2{\sim}6{\times}10^{-2}\;g/m^2/day$ and a high transmittance of 87 %. In addition, current-voltage-luminescence results of an OLED passivated with a 150 nm-thick $SiN_x$ film compared to nonpassivated sample were identical indicating that the performance of an OLED is not critically affected by radiation from tungsten catalyzer during the $SiN_x$ deposition.

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Metallic Nano Particle Generation by Supersonic Nozzle with Corona Discharge (초음속 유동에서 코로나 방전을 이용한 금속 나노 입자의 생성)

  • Jung, Jae-Hee;Park, Hyung-Ho;Kim, Sang-Soo
    • Proceedings of the KSME Conference
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    • 2004.04a
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    • pp.1510-1515
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    • 2004
  • The effects of additive ions on the generation of metallic nanoparticles were evaluated using a corona induced supersonic nozzle. Applying the corona discharge to the nanoparticle generator, a tungsten needle and the supersonic nozzle are used as an anode electrode and a cathode electrode respectively. The corona ions act as nuclei for the silver vapor condensation. The ion density was controlled precisely as varying the applied voltage between electrode and nozzle. The mean diameter of the silver particle decreases as the ion density increases. However, the number concentration of the silver particle tended to increase with the ion density. The size distribution is more uniform as the ion density increases.

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Effect of Contact Conditions on the Micro-adhesion Characteristics using SPM (SPM을 이용한 접촉조건 변화에 따른 미소응착 특성 연구)

  • 윤의성;박지현;양승호;공호성
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 2000.11a
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    • pp.18-22
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    • 2000
  • An experimental study was carried out to investigate the effect of nano-contact condition on the nano-adhesion phenomena. SPM(scanning probe microscope) tips with different radius of curvature were fabricated by a series of masking and etching processes. DLC(diamond-like carbon) and W-DLC (tungsten-incorporated diamond-like carbon) were coated on (100) silicon wafer by PACVD(plasma assisted chemical vapor deposition). Pull-off forces of Pure Si-wafer, DLC and W-DLC were measured with SPM(scanning probe microscope). Also, the same series of tests were carried out with the tips with different radius of curvature. Results showed that DLC and W-DLC showed much lower pull-off force than Si-wafer and Pull-off force increased with the tip radius.

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Visible Light-based Photocatalytic Degradation by Transition Metal Oxide (전이 금속 산화물을 이용한 가시광선 기반 광촉매 분해)

  • Lee, Soomin;Park, Yeji;Lee, Jae Hun;Patel, Rajkumar
    • Membrane Journal
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    • v.29 no.6
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    • pp.299-307
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    • 2019
  • Photocatalysis is an environment friendly technique for degrading organic dyes in water. Tungsten oxide is becoming an active area of research in photocatalysis nanomaterials for having a smaller bandgap than the previously favored titanium dioxide. Synthesis of hierarchical structures, doping platinum (Pt), coupling with nanocomposites or other semiconductors are investigated as valid methods of improving the photocatalytic degradation efficiency. These impact the reaction by creating a redshift in the wavelength of light used, effecting charge transfer, and the formation/recombination of electron-hole pairs. Each of the methods mentioned above are investigated in terms of synthesis and photocatalytic efficiency, with the simplest being modification on the morphology of tungsten oxide, since it does not need synthesis of other materials, and the most efficient in photocatalytic degradation being complex coupling of metal oxides and carbon composites. The photocatalysis technology can be incorporated with water purification membrane by modularization process and applied to advanced water treatment system.

Additional Impurity Roles of Nitrogen and Carbon for Ternary compound W-C-N Diffusion Barrier for Cu interconnect (Cu 금속 배선에 적용되는 질소와 탄소를 첨가한 W-C-N 확산방지막의 질소불순물 거동 연구)

  • Kim, Soo-In;Lee, Chang-Woo
    • Journal of the Korean Vacuum Society
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    • v.16 no.5
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    • pp.348-352
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    • 2007
  • In submicron processes, the feature size of ULSI devices is critical, and it is necessary both to reduce the RC time delay for device speed performance and to enable higher current densities without electromigration. In case of contacts between semiconductor and metal in semiconductor devices, it may be very unstable during the thermal annealing process. To prevent these problems, we deposited tungsten carbon nitride (W-C-N) ternary compound thin film as a diffusion barrier for preventing the interdiffusion between metal and semiconductor. The thickness of W-C-N thin film is $1,000{\AA}$ and the process pressure is 7mTorr during the deposition of thin film. In this work we studied the interface effects W-C-N diffusion barrier using the XRD and 4-point probe.

Fabrication of a Nano-sized Conical-type Tungsten Field-emitter Based on Carbon Nanotubes (탄소나노튜브를 이용한 텅스텐 나노팁 전계방출기 제작)

  • Park, Chang-Kyun;Kim, Jong-Pil;Kim, Young-Kwang;Yun, Sung-Jun;Kim, Won;Park, Jin-Seok
    • Proceedings of the KIEE Conference
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    • 2007.11a
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    • pp.90-91
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    • 2007
  • Nano-sized conical-type tungsten(W) field-emitters based on carbon nanotubes(CNTs) are fabricated with the configuration of CNTs/catalyst/buffer/W-tip by adopting various buffer layers, such as TiN, Al, Al/TiN, and Al/hi/TiN. This study focuses on elucidating how the buffer layers affect the structural properties of CNTs and the electron-emission characteristics of CNT-emitters. Field-emission scanning electron microscopy(FESEM) and high-resolution transmission electron microscopy(HRTEM) are used to monitor the nanostructures and surface morphologies of all the catalysts and CNTs grown. The crystalline structure of CNTs is also characterized by Raman spectroscopy. Furthermore, the measurement of field-emission characteristics for all the field-emitters fabricated shows that the emitter using the Al/Ni/TiN stacked buffer reveals the most excellent performances, such as maximum emission current of $202{\mu}A$, threshold field of 2.08V/${\mu}m$, and long-term (up to 24h) stability of emission current.

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Effects of applied voltages on nano-structures of anodized metal oixdes and their electrochromic applications (인가 전압에 따른 양극산화된 금속 산화물의 나노 구조 변화와 전기변색 응용)

  • Kim, Tae-Ho;Lee, Jae-Uk;Kim, Byeong-Seong;Jeon, Hyeong-Jin;Na, Yun-Chae
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2016.11a
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    • pp.115.1-115.1
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    • 2016
  • Electrochemical anodization has been interested due to its useful way for the nano-scale architecture of metal oxides obtained from a metal substrate. By using this method, it is easy to control the morphology of the oxide materials by controlling electrochemical conditions. Among oxide materials obtained from the transition metals such as Ti, V, W, etc., in this paper, the morphological study of anodized $TiO_2$ was employed at various voltage conditions in fluoric based electrolyte, and the effects of applied voltage (sweep rate and retention time) on the tube morphologies were investigated. Furthermore, by using anodization of tungsten substrate (W), we fabricated the porous structure of $WO_3$ and provided merits of tailored structure for the hybridization of inorganic and organic materials as electrochromic (EC) applications. The hybrid porous $WO_3$ shows multi-chromic properties during the EC reactions at specific voltage conditions. From these results, the anodization process with tailoring nano-structure is one of the promising methods for EC applications.

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Nitrogen concentration effect and Thin film thickness effect of tungsten - Boron - carbon - nitride thin film for diffusion barrier (W-B-C-N 확산방지막의 질소 불순물의 영향과 박막의 두께에 따른 열확산 특성 연구)

  • Kim, Soo-In;Choi, Min-Keon;Lee, Chang-Woo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.173-174
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    • 2007
  • 반도체 소자가 발달함에 따라서 박막은 더욱 다층화 되고 그 두께는 줄어들고 있다. 따라서 소자의 초고집적화를 위해서는 각 박막의 두께를 더욱 작게 하여야 한다. 또한 반도체 소자 제조 공정에서는 Si 기판과 금속 박막간의 확산이 커다란 문제로 부각되어 왔다. 특히 Cu는 높은 확산성에 의하여 Si 기판과 접합에서 많은 확산에 의한 문제가 발생하게 되며, 또한 선폭이 줄어듦에 따라 고열이 발생하여 실리콘으로 spiking이 발생하게 된다. 이러한 확산을 방지하기 위하여 금속 배선과 Si기판 사이에는 필연적으로 확산방지막을 삽입하게 되었다. 기존의 연구에서는 $1000\;{\AA}$의 W-B-C-N 확산방지막을 제작하여 연구하였다. 이 논문에서는 Cu의 확산을 방지하기 위한 W-B-C-N 확산방지막을 다양한 두께로 제작하여 그 특성을 확인하여 초고집적화를 위한 더욱 얇은 두께의 W-B-C-N 확산방지막에 대하여 연구하였다. W-B-C-N 확산방지막의 두께 변화에 대한 특성을 확인하기 위하여 $900^{\circ}C$까지 열처리 한 후 그 면저항을 측정하였다.

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Physical Property of W-C-N Diffusion Barrier through Stress-Strain curve (Stress-Strain curve를 이용한 W-C-N 확산방지막 물성 특성 연구)

  • Lee, Kyu-Young;Kim, Soo-In;Park, Sang-Jae;Lee, Dong-Kwan;Jeong, Yong-Rok;Jung, Jun;Lee, Jong-Rim;Lee, Chang-Woo
    • Journal of the Korean Vacuum Society
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    • v.20 no.4
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    • pp.266-270
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    • 2011
  • This paper suggest tungsten (W)-carbon (C)-nitrogen (N) thin films for diffusion barrier that W is main material and C and N are additives. W-C-N thin films are deposited with fixed rates of W and C but with a variation of $N_2$ gas flow and W-C-N thin films are heated at $600^{\circ}C$. From the experimental results, the variation of elastoplastic region for W-C-N thin film measured by tribological property is larger than that of elastic region with a variation of $N_2$ gas flow. These results show that the $N_2$ gas flow is more directly related with the elastoplastic region of W-C-N thin film. Nanoindenting test executed 16 times consecutively and we got the stress-strain curve graphs and hardness datas at each sample. Through the stress-strain curve graphs, the standard diviation of stress-strain curve for $N_2$ gas flow rate of 2.0 sccm is smaller than that of 0, 0.5, 1.5 sccm. Consequently, the physical stability of W-C-N thin film depends on the flow rate of $N_2$ gas.