• 제목/요약/키워드: Nano technology

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ITO/CNT 나노 복합체의 염료감응형 태양전지의 이용 (ITO/CNT Nano Composites as a Counter Electrode for the Dye-Sensitized Solar Cell Applications)

  • 박종현;;정현준;조태연;윤순길
    • 한국전기전자재료학회논문지
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    • 제24권1호
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    • pp.76-80
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    • 2011
  • The ITO/Cabon Nano Tube (CNT) nano composites were deposited by nano cluster deposition (ITO) and arc discharge deposition (CNT) on glass substrates. The structural, optical and photovoltaic performance of ITO/CNT nano composites as a counter electrode of dye-sensitized solar-cells (DSSCs) such films were investigated. At low temperature below $250^{\circ}C$, the ITO films deposited on CNT. The ITO/CNT nano composit showed a good optical and electrical property for the counter electrode of DSSCs. When the as-prepared ITO/CNT nano composites are used for the counter electrodes, the photovoltaic parameters are $V_{OC}$ = 0.69 V, $J_{SC}$ = 5.69 mA/$cm^2$, FF = 0.32, and $\eta$ = 0.53 %. The ITO/CNT nano composites showed the possibility for the counter electrode applications of DSSCs.

Nano TiNx를 함유한 Ti복합체의 제조 (Fabrication of Titanium Composites Containing nano-sized TiNx)

  • 김문협;김동식;오영환;박성범;박승식;이지혜;박노진;김성진;정찬회;이준희
    • 한국분말재료학회지
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    • 제13권2호
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    • pp.144-149
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    • 2006
  • In this research we tried to make nano-sized TiNx by using planetary milling, and we made the composites double layered of titanium and nano-sized TiNx by using spark plasma sintering apparatus after mixing with the different ratio of pure titanium powder, and they were heat treated at $850^{\circ}C$ for 30 minutes. The crystal structures of nano-sized TiNx powders and the composites were analyzed by X-ray diffraction (XRD). The microstructures of the powders were analyzed by using scanning electron microscopy (FESEM) and the 40-50 nm size of nano-sized TiNx particle on the surface of agglomerated particles was investigated. With increasing the ratio of nano-sized TiNx of the composites, the microvickers hardness of the composites was increased.

A 0.55" PDLC-LCoS Micro-display for Mobile Projectors

  • Do, Yun-Seon;Yang, Kee-Jeong;Sung, Shi-Joon;Kim, Jung-Ho;Lee, Gwang-Jun;Lee, Yong-Hwan;Chung, Hoon-Ju;Roh, Chang-Gu;Choi, Byeong-Dae
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.1527-1530
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    • 2009
  • A LCoS micro-display using polymer dispersed liquid crystals (PDLCs) for light switching layer was fabricated. The Si backplane of SVGA ($800{\times}600$) with a pixel size of $14{\times}14mm^2$ was prepared by a $0.35{\mu}m$ 18V CMOS process. PDLCs were filled in the gap between backplane and ITO glass by conventional vacuum filling method. The prepared panels were driven by a field sequential color (FSC) scheme at the frequency of 180Hz and were successful in modulating LED lights to show projection images. The preparation and performance of PDLC-LCoS are presented.

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Novel Graphene Volatile Memory Using Hysteresis Controlled by Gate Bias

  • Lee, Dae-Yeong;Zang, Gang;Ra, Chang-Ho;Shen, Tian-Zi;Lee, Seung-Hwan;Lim, Yeong-Dae;Li, Hua-Min;Yoo, Won-Jong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.120-120
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    • 2011
  • Graphene is a carbon based material and it has great potential of being utilized in various fields such as electronics, optics, and mechanics. In order to develop graphene-based logic systems, graphene field-effect transistor (GFET) has been extensively explored. GFET requires supporting devices, such as volatile memory, to function in an embedded logic system. As far as we understand, graphene has not been studied for volatile memory application, although several graphene non-volatile memories (GNVMs) have been reported. However, we think that these GNVM are unable to serve the logic system properly due to the very slow program/read speed. In this study, a GVM based on the GFET structure and using an engineered graphene channel is proposed. By manipulating the deposition condition, charge traps are introduced to graphene channel, which store charges temporarily, so as to enable volatile data storage for GFET. The proposed GVM shows satisfying performance in fast program/erase (P/E) and read speed. Moreover, this GVM has good compatibility with GFET in device fabrication process. This GVM can be designed to be dynamic random access memory (DRAM) in serving the logic systems application. We demonstrated GVM with the structure of FET. By manipulating the graphene synthesis process, we could engineer the charge trap density of graphene layer. In the range that our measurement system can support, we achieved a high performance of GVM in refresh (>10 ${\mu}s$) and retention time (~100 s). Because of high speed, when compared with other graphene based memory devices, GVM proposed in this study can be a strong contender for future electrical system applications.

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FIB를 이용한 나노가공공정 기술 개발 (Development of Nano Machining Technology using Focused ion Beam)

  • 최헌종;강은구;이석우;홍원표
    • 한국공작기계학회:학술대회논문집
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    • 한국공작기계학회 2004년도 춘계학술대회 논문집
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    • pp.482-486
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    • 2004
  • The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its use in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies, such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries. This paper presents that the recent development and our research goals in FIB nano machining technology are given. The emphasis will be on direct milling, or chemical vapor deposition techniques (CVD), and this can distinguish the FIB technology from the contemporary photolithography process and provide a vital alternative to it. After an introduction to the technology and its FIB principles, the recent developments in using milling or deposition techniques for making various high-quality devices and high-precision components at the micro/nano meter scale are examined and discussed. Finally, conclusions are presented to summarize the recent work and to suggest the areas for improving the FIB milling technology and for studying our future research.

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