• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.261-263
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• 2008

We attempted modulation of the hydrogen dilution ratio in a Cat-CVD system to achieve both the minimal incubation layer and the high throughput. We obtained the incubation layer thickness of 3 nm, and were able to grow a 200 nm-thick film having a 70 % crystallinity in 18 minutes.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.557-559
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• 2009

We attempted modulation of hydrogen dilution ratio to achieve both the minimal incubation layer and high deposition rate. The incubation layer thickness was estimated by transmission electron microscopy (TEM) and crystallization fraction was measured by Raman spectroscopy.

• 반도체디스플레이기술학회지
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• 제22권4호
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• pp.66-71
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• 2023

This paper describes a hybrid cleaning method of silicon wafer combining nano-bubble and ultrasound to remove sub-micron particles and contaminants with minimal damage to the wafer surface. In the megasonic cleaning process of semiconductor manufacturing, the cavitation induced by ultrasound can oscillate and collapse violently often with re-entrant jet formation leading to surface damage. The smaller size of cavitation bubbles leads to more stable oscillations with more thermal and viscous damping, thus to less erosive surface cleaning. In this study, ultrasonic energy was applied to the wafer surface in the DI water to excite nano-bubbles at resonance to remove contaminant particles from the surface. A patented nano-bubble generator was developed for the generation of nano-bubbles with concentration of 1×10⁹ bubbles/ml and nominal nano-bubble diameter of 150 nm. Ultrasonic nano-bubble technology improved a contaminant removal efficiency more than 97% for artificial nano-sized particles of alumina and Latex with significant reduction in cleaning time without damage to the wafer surface.

• 한국재료학회지
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• 제15권1호
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• pp.66-72
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• 2005

Surface modification of the silicon-coated graphite was carried out at $200^{\circ}C\~800^{\circ}C$ under hydrogen atmosphere. The silicon-coated graphites were prepared by fluidized-bed spray coating method. The components of silicon films prepared on the graphite consist of SiO, $SiO_x\;(1. The components of silicon films at $200^{\circ}C$ of heat treatment brought on the higher fraction of SiO and $SiO_x$ than that of $SiO_2$. However, inactive $SiO_2$ fraction increases with increase of the heat treatment temperature. The high content of SiO and $SiO_x$ in the silicon film on graphite leads to the higher discharge capacity in our experimental range.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.32-32
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• 2009

Silicon carbide (SiC) is a wide-bandgap semiconductor that has materials properties necessary for the high-power, high-frequency, high-temperature, and radiation-hard condition applications, where silicon devices cannot perform. SiC is also the only compound semiconductor material. on which a silicon oxide layer can be thermally grown, and therefore may fabrication processes used in Si-based technology can be adapted to SiC. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, we investigated that the local oxide growth on SiC under various conditions and demonstrated that an increased (up to ~100 nN) tip loading force (LF) on highly-doped SiC can lead a direct oxide growth (up to few tens of nm) on 4H-SiC. In addition, the surface potential and topography distributions of nano-scale patterned structures on SiC were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the nano-scale patterned on SiC was higher than that of original SiC surface. The results confirm the concept of the work function and the barrier heights of oxide structures/SiC structures.

• 자원리싸이클링
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• 제16권5호
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• pp.41-45
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• 2007

폐실리콘 슬러지로부터 테트라메틸오쏘실리케이트(TMOS)와 실리카 나노분말을 제조하였다. 먼저, 실리카 나노분말의 전구체인 TMOS를 폐실리콘 슬러지로부터 촉매 화학반응에 의해 합성하였다. TMOS의 합성실험에서 반응온도가 $130^{\circ}C$ 이상에서는 반응시간이 5시간 경과 시 반응온도에 무관하게 100%의 반응율을 나타내었다. 그러나 $150^{\circ}C$ 이상에서는 초기 반응속도가 빨라졌다. 메탄올 주입속도를 0.8 ml/min에서 1.4 ml/min로 증가시에는 3시간 경과 후에는 반응율이 변화하지 않았다. 이와 같이 합성된 TMOS로부터 화염분무열분해법에 의해 실리카 나노분말을 제조하였다. 제조된 실리카 나노분말은 구형이며, 무응집 형태이었다. 평균입자 크기는 전구체의 주입속도 및 농도변화에 따라 9 nm에서 30 nm로 변화하였다.

• 센서학회지
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• 제11권5호
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• pp.294-300
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• 2002

In this study, we fabricated thermopile infrared sensor with floating membrane structure. Floating membrane was formed by SOI(Silicon On Insulator) structure. In SOI structure, silicon dioxide layer between top silicon layer and bottom silicon substrate was etched by HF solution, then membrane was floated over substrate. After membrane was floated, thermopile pattern was formed on membrane. By insertion of SOI technology, we could obtain thermal isolation structure easily and passivation process for sensor pattern protection was not required during fabrication process. Then, the amplifier circuit for thermopile sensor was fabricated by using $1.5{\mu}m$ CMOS process. The voltage gain of fabricated amplifier was about two hundred.

• 한국분말재료학회지
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• 제23권1호
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• pp.43-48
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• 2016

Waste SiC powders obtained from silicon wafer sludge have very low density and a narrow particle size distribution of $10-20{\mu}m$. A scarce yield of C and Si is expected when SiC powders are incorporated into the Fe melt without briquetting. Here, the briquetting variables of the SiC powders are studied as a function of the sintering temperature, pressure, and type and contents of the binders to improve the yield. It is experimentally confirmed that Si and C from the sintered briquette can be incorporated effectively into the Fe melt when the waste SiC powders milled for 30 min with 20 wt.% Fe binder are sintered at $1100^{\circ}C$ upon compaction using a pressure of 250 MPa. XRF-WDS analysis shows that an yield of about 90% is obtained when the SiC briquette is kept in the Fe melt at $1650^{\circ}C$ for more than 1 h.

• 한국정밀공학회지
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• 제28권8호
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• pp.966-974
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• 2011

The use of ion beams in the micro/nano scale is greatly increased by technology development. Especially, focused ion beams (FIBs) have a great potential to fabricate the device in sub micro scale. Nevertheless, FIB has several limitations, surface swelling in low ion dose regime, precipitation of incident ions, and the redeposition effect due to the sputtered atoms. In this research, we demonstrate a way which can be used to fabricate mold structures on a silicon substrate using FIBs. For the purpose of the demonstration, two essential subjects are necessary. One is that focused ion beam diameter as well as shape has to be measured and verified. The other one is that the accurate rotational symmetric model of ion-solid interaction has to be mathematically developed. We apply those two, measured beam diameter and mathematical model, to fabricate optical lenses mold on silicon. The characteristics of silicon mold fabrication will be discussed as well as simulation results.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.171-171
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• 2012

Neutral beam assisted chemical vapor deposition (NBa-CVD) process has been developed as a nove,l room temperature deposition process for the light-soaking free nano-crystalline silicon (nc-Si) thin films including intrinsic and n-type doped thin film. During formation of nc-Si thin films by the NBa-CVD process with silicon reflector at room temperature, the energetic particles enhance doping efficiency and crystalline phase in nc-Si thin films without additional heating at substrate. The effects of incident NB energy controlled by the reflector bias have been confirmed by Raman spectra analysis. Additionally, TEM images show uniform nc-Si grains which imbedded amorphous phase without incubation layer. The nc-Si films by the NBa-CVD are hardly degenerated by light soaking; the degradations of photoconductivity were just a few percents before and after light irradiation.