• 제목/요약/키워드: Nano process

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스탬퍼 가열/냉각을 이용한 고세장비 나노 구조물 성형 (Injection Molding of High Aspect Ratio Nano Features Using Stamper Heating/Cooling Process)

  • 유영은;최성주;김선경;최두선;황경현
    • 소성∙가공
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    • 제16권1호
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    • pp.20-24
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    • 2007
  • Polypropylene substrate with hair-like nano features(aspect $ratio{\sim}10$) on the surface is fabricated by injection molding process. Pure aluminum plate is anodized to have nano pore array on the surface and used as a stamper for molding nano features, The size and the thickness of the stamper is $30mm{\times}30mm$ and 1mm. The fabricated pore is about 120nm in diameter and 1.5 um deep. For molding of a substrate with nano-hair type of surface features, the stamper is heated up over $150^{\circ}C$ before the filling stage and cooled down below $70^{\circ}C$ after filling to release the molded part. For heating the stamper, stamper itself is used as a heating element by applying electrical power directly to each end of the stamper. The stamper becomes cooled down without circulation of coolant such as water or oil. With this new stamper heating method, nano hairs with aspect ratio of about 10 was successfully injection molded. We also found the heating & cooling process of the stamper is good for releasing of molded nano-hairs.

$SiO_2$막의 습식식각 방법별 균일도 비교 (Comparison of Etching Rate Uniformity of $SiO_2$ Film Using Various Wet Etching Method)

  • 안영기;김현종;성보람찬;구교욱;조중근
    • 반도체디스플레이기술학회지
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    • 제5권2호
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    • pp.41-46
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    • 2006
  • Wet etching process in recent semiconductor manufacturing is devided into batch and single wafer type. Batch type wet etching process provides more throughput with poor etching uniformity compared to single wafer type process. Single wafer process achieves better etching uniformity by boom-swing injected chemical on rotating wafer. In this study, etching characteristics of $SiO_2$ layer at room and elevated temperature is evaluated and compared. The difference in etching rate and uniformity of each condition is identified, and the temperature profile of injected chemical is theoretically calculated and compared to that of experimental result. Better etching uniformity is observed with single wafer tool with boom-swing injection compared to single wafer process without boom-swing or batch type tool.

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Micromachining of Cr Thin Film and Glass Using an Ultrashort Pulsed Laser

  • Choi, Ji-Yeon;Kim, Jae-Gu;Shin, Bo-Sung;Whang, Kyung-Hyun
    • Journal of the Optical Society of Korea
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    • 제7권3호
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    • pp.160-164
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    • 2003
  • Materials processing by ultrashort pulsed laser is actively being applied to micromachining technology due to its advantages with regard to non-thermal machining. In this study, materials processing with ultrashort pulses was studied by using the high repetition rate of a 800 nm Ti:sapphire regenerative amplifier. This revealed that the highly precise micromachining of metallic thin film and bulk glass with a minimal heat affected zone (HAZ) could be obtained by using near damage threshold energy. Grooves with diffraction limited sub-micrometer width were obtained with widths of 620 nm on Cr thin film and 800 nm on a soda-lime glass substrate. The machined patterns were investigated through SEM images. We also phenomenologically examined the influence of variations of parameters and proposed the optimal process conditions for microfabrication.

나노인프로세스 형상계측 및 미세가공용 프로브의 개발 (Development of a New Probe to Realize Nano/Micro Mechanical Machining and In-Process Profile Measurement)

  • 권현규;최성대
    • 한국기계가공학회지
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    • 제2권1호
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    • pp.75-84
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    • 2003
  • In this paper, a new nano/micro-mechanical processing test machine was developed. This new test machine, which is based on the principle of the scanning force controlled probe microscope, can realize nano/micro-mechanical machining and in-process profile measurement. Experimental results of nano/micro indentation and scratching show that the controllable cutting depth of the test machine can be controlled by PZT actuator. Profile measurement of the machined surface has also been performed by using the test machine and a conventional AFM(Atomic Force Microscopy). A good agreement of the two measurement results have been achieved.

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마이크로/나노 트라이볼로지 기반 기계-화학적 미세가공기술 : 발전과정 및 전망 (Mechano-Chemical Microfabrication Technology Based on Micro/Nano-Tribology : Development Process and Prospect)

  • 성인하;김대은
    • 한국공작기계학회:학술대회논문집
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    • 한국공작기계학회 2002년도 추계학술대회 논문집
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    • pp.274-279
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    • 2002
  • In this paper, the development process of an unique and creative micro/nano-structure fabrication technique based on micro/nano-tribology are reviewed and discussed. The so-called Mechano-Chemical Process(MCP), which has been developed since 1995 by Tribology Research Laboratory at Yonsei University with the motivation to overcome the demerits of the conventional photolithographic techniques, is based on the fundamental understanding of the interaction between the tool tip and the workpiece surface. This process is a maskless process which offers tremendous flexibility in surface patterns that can be created on a workpiece surface without using any capital intensive equipment. It Is capable of fabricating the prototypes of micro/nano-components, micro- structured surface with various geometries, micro-molds for making polymer or metal parts, and micro-fluidic channels for lab-on-a- chip

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Plasma Engineering for Nano-Materials

  • Kim, Seong-In;Shin, Myoung-Sun;Son, Byung-Koo;Song, Seok-Kyun;Choi, Sun-Yong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.79-79
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    • 2012
  • A high temperature and a low temperature plasma process technologies were developed and demonstrated for synthesis, hybrid formation, surface treatment and CVD engineering of nano powder. RF thermal plasma is used for synthesis of spherical nano particles in a diameter ranged from 10 nm to 100 nm. A variety of nano particules such as Si, Ni, has been synthesized. The diameter of the nano-particles can be controlled by RF plasma power, pressure, gas flow rate and raw material feed rate. A modified RF thermal plasma also produces nano hybrid materials with graphene. Hemispherical nano-materials such as Ag, Ni, Si, SiO2, Al2O3, size ranged from 30 to 100 nm, has been grown on graphene nanoplatelet surface. The coverage ranged from 0.1 to 0.7 has been achieved uniformly over the graphene surface. Low temperature AC plasma is developed for surface modification of nano-powder. In order to have a three dimensional and lengthy plasma treatment, a spiral type of reactor has been developed. A similar plasma reactor has been modfied for nano plasma CVD process. The reactor can be heated with halogen lamp.

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3중 접합 공정에 의한 MEMS 공진기의 웨이퍼레벨 진공 패키징 (Wafer-level Vacuum Packaging of a MEMS Resonator using the Three-layer Bonding Technique)

  • 양충모;김희연;박종철;나예은;김태현;노길선;심갑섭;김기훈
    • 센서학회지
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    • 제29권5호
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    • pp.354-359
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    • 2020
  • The high vacuum hermetic sealing technique ensures excellent performance of MEMS resonators. For the high vacuum hermetic sealing, the customization of anodic bonding equipment was conducted for the glass/Si/glass triple-stack anodic bonding process. Figure 1 presents the schematic of the MEMS resonator with triple-stack high-vacuum anodic bonding. The anodic bonding process for vacuum sealing was performed with the chamber pressure lower than 5 × 10-6 mbar, the piston pressure of 5 kN, and the applied voltage was 1 kV. The process temperature during anodic bonding was 400 ℃. To maintain the vacuum condition of the glass cavity, a getter material, such as a titanium thin film, was deposited. The getter materials was active at the 400 ℃ during the anodic bonding process. To read out the electrical signals from the Si resonator, a vertical feed-through was applied by using through glass via (TGV) which is formed by sandblasting technique of cap glass wafer. The aluminum electrodes was conformally deposited on the via-hole structure of cap glass. The TGV process provides reliable electrical interconnection between Si resonator and aluminum electrodes on the cap glass without leakage or electrical disconnection through the TGV. The fabricated MEMS resonator with proposed vacuum packaging using three-layer anodic bonding process has resonance frequency and quality factor of about 16 kHz and more than 40,000, respectively.

방열소자 나노튜브 제조 시스템을 위한 공정 및 장비 개발에 관한 연구 (A Study on The Development of Process and Equipment for Heat Radiating Module Nano-Tube Manufacturing System)

  • 최갑용
    • 한국융합학회논문지
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    • 제2권3호
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    • pp.45-50
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    • 2011
  • 컴퓨터를 비롯한 고집적 회로를 갖는 시스템의 작동 열 배출이나 열전소자를 이용한 냉난방시스템의 열 이동에는 고성능 열전달 통로가 필요하다. 이와 같은 고효율 열전달 시스템에 효과적으로 대처할 수 있도록 개발된 것이 나노튜브이다. 본 연구의 목적은 방열소자(이하 나노튜브라 한다.) 제조를 위한 공정과 제조시스템을 개발하는데 있다. 지금까지 국내에 보급되고 있는 나노튜브는 대부분 수입에 의존하고 있기 때문에 본 연구는 기술적인 측면에서 방열소자 개발에 기여할 뿐만 아니라 경제적으로는 큰 수입대체효과를 가져 올 것으로 기대된다. 본 연구는 나노튜브의 제조공정과 제조시스템 개발에 대한 전 과정을 보인다.

양극산화공정을 이용한 반사방지 성형용 나노 마스터 개발 (Fabrication of Nano Master with Anti-reflective Surface Using Aluminum Anodizing Process)

  • 신홍규;박용민;서영호;김병희
    • 한국생산제조학회지
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    • 제18권6호
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    • pp.697-701
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    • 2009
  • A simple method for the fabrication of porous nano-master for the anti-reflection effect on the transparent substrates is presented. In the conventional fabrication methods for antireflective surface, coating method using materials with low refractive index has usually been used. However, it is required to have a high cost and long processing time for mass production. In this paper, we developed a porous nano-master with anti-reflective surface for the molding stamper of the injection mold, hot embossing and UV imprinting by using the aluminum anodizing process. Through two-step anodizing and etching processes, a porous nano-master with anti-reflective surface was fabricated at the large area. Pattern size Pore diameter and inter-pore distance are about 130nm and 200nm, respectively. In order to replicate anti-reflective structure, hot embossing process was performed by varying the processing parameters such as temperature, pressure and embossing time etc. Finally, antireflective surface can be successfully obtained after etching process to remove selectively silicon layer of AAO master.

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