• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.199-204
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• 2000

In this study, the ZnS nanosized thin films that could be used for fabrication of blue light-emitting diodes, electro-optic modulators, and n-window layers of solar cells were grown by the solution growth technique (SGT), and their structural and optical properties were examined. Based on these results, the quantum size effects of ZnS were systematically investigated. Governing factors related to the growth condition were the concentration of precursor solution, growth temperature, concentration of aq. ammonia, and growth duration. X-ray diffraction patterns showed that the ZnS thin film obtained in this study had the cubic structure ($\beta$-ZnS). When the growth temperature was $75^{\circ}C$, the surface morphology and the grain size uniformity were the best. The energy band gaps of samples were determined from the optical transmittance valued, and were shown to vary from 3.69 eV to 3.91 eV. These values were substantially higher than 3.65 eV of bulk ZnS, demonstrating that the quantum size effect of SGT grown ZnS is remarkable. Photoluminescence (PL) peaks were observed at the positions corresponding to the lower energy than that to energy band gap, illustrating that the surface states were induced by the ultra-fineness of grains in ZnS films. Particularly, for the first time, it is reported for the SGT grown ZnS that the PL peaks were shifted depending on the grain size.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.241-241
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• 2008

Macrofore formation in silicon and other semiconductors using electrochemical etching processes has been, in the last years, a subject of great attention of both theory and practice. Its first reason of concern is new areas of macropore silicone applications arising from microelectromechanical systems processing (MEMS), membrane techniques, solar cells, sensors, photonic crystals, and new technologies like a silicon-on-nothing (SON) technology. Its formation mechanism with a rich variety of controllable microstructures and their many potential applications have been studied extensively recently. Porous silicon is formed by anodic etching of crystalline silicon in hydrofluoric acid. During the etching process holes are required to enable the dissolution of the silicon anode. For p-type silicon, holes are the majority charge carriers, therefore porous silicon can be formed under the action of a positive bias on the silicon anode. For n-type silicon, holes to dissolve silicon is supplied by illuminating n-type silicon with above-band-gap light which allows sufficient generation of holes. To make a desired three-dimensional nano- or micro-structures, pre-structuring the masked surface in KOH solution to form a periodic array of etch pits before electrochemical etching. Due to enhanced electric field, the holes are efficiently collected at the pore tips for etching. The depletion of holes in the space charge region prevents silicon dissolution at the sidewalls, enabling anisotropic etching for the trenches. This is correct theoretical explanation for n-type Si etching. However, there are a few experimental repors in p-type silicon, while a number of theoretical models have been worked out to explain experimental dependence observed. To perform ordered macrofore formaion for p-type silicon, various kinds of mask patterns to make initial KOH etch pits were used. In order to understand the roles played by the kinds of etching solution in the formation of pillar arrays, we have undertaken a systematic study of the solvent effects in mixtures of HF, N-dimethylformamide (DMF), iso-propanol, and mixtures of HF with water on the macrofore structure formation on monocrystalline p-type silicon with a resistivity varying between 10 ~ 0.01 $\Omega$ cm. The etching solution including the iso-propanol produced a best three dimensional pillar structures. The experimental results are discussed on the base of Lehmann's comprehensive model based on SCR width.

• Polymer(Korea)
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• v.36 no.4
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• pp.542-548
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• 2012

Morphological characteristics and formation of symmetric polystyrene-block-poly(1,4-butadiene) copolymer (PS-b-PBD) in thin films upon solvent-annealing were investigated by using atomic force microscopy (AFM). The thin films solvent-annealed in cyclohexane revealed the perforated lamellae of poly(1,4-butadiene) in the matrix of polystyrene while those solvent-annealed in n-hexane exhibited highly disordered patterns. Interestingly, when the thin films of PS-b-PBD were solvent-annealed with binary mixtures of cyclohexane and n-hexane, the morphological transition from the perforated lameallae to the perpendicularly-oriented lamellae of poly(1,4-butadiene) could be induced by changing the mixing ratio of both solvents. We also demonstrated that after microdomians of poly(1,4-butadiene) were successfully degraded by UV-$O_3$, linear poly(dimethyl siloxane) chains were back-filled into the etched regions of the thin film and then converted to silica nano-objects by oxygen plasma treatments.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.6
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• pp.1754-1759
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• 2008

To produce plastic parts that have fine pattern through conventional injection molding, a lot of difficulties follow. Therefore, rapid heating and cooling methods are good candidates for manufacturing injection-molded parts with micro/nano patterns. In this study, we adopted the E-Mold patent technology. The mold for E-Mold technology has a separate heated core with micro heaters. It is very important to optimize the lay-out of the heaters in heated core because it influences both control and distribution of mold temperature. We developed a optimization method of heating line lay-out by using commercial softwares and compared the output with the experimental results. We used Pro-Engineer Wildfire 2.0 for the mold design, ICEMCFD for mesh generation, and FLUENT for heat transfer simulation. The simulation results showed the temperature profile from $60^{\circ}C$ to $120^{\circ}C$ or $180^{\circ}C$ during heating and cooling process which were compared with the injection molding experiments. We concluded that the simulation could well explain the experimental results. It was shown that the E-Mold optimization design for heater lay-out could be available through the simulation.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.2
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• pp.54-62
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• 2024

SICM (Scanning Ion Conductivity Microscopy) is a technique for measuring surface topography in an environment where electrochemical reactions occur, by detecting changes in ion conductivity as a nanopipette tip approaches the sample. This study includes an investigation of the current response curve, known as the approach curve, according to the distance between the tip and the sample. First, a simulation analysis was conducted on the approach curves. Based on the simulation results, then, several measuring experiments were conducted concurrently to analyze the difference between the simulated and measured approach curves. The simulation analysis confirms that the current squeezing effect occurs as the distance between the tip and the sample approaches half the inner radius of the tip. However, through the calculations, the decrease in current density due to the simple reduction in ion channels was found to be much smaller compared to the current squeezing effect measured through actual experiments. This suggests that ion conductivity in nano-scale narrow channels does not simply follow the Nernst-Einstein relationship based on the diffusion coefficients, but also takes into account the fluidic hydrodynamic resistance at the interface created by the tip and the sample. It is expected that SICM can be combined with SECM (Scanning Electrochemical Microscopy) to overcome the limitations of SECM through consecutive measurement of the two techniques, thereby to strengthen the analysis of electrochemical surface reactivity. This could potentially provide groundbreaking help in understanding the local catalytic reactions in electroless plating and the behaviors of organic additives in electroplating for various kinds of patterns used in semiconductor damascene processes and packaging processes.