• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.203-207
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• 2009

Copper is known as a replacement for aluminum wire which is used for semiconductor. Because specific resistance of Cu ($1.67{\mu}{\Omega}$-cm) is lower than that of Al ($2.66{\mu}{\Omega}$-cm), Cu reduce RC delay time. Although melting point of Cu($1085^{\circ}C$) is higher than melting point of Al, Cu have characteristic to easily react with Silicon(Si) in low temperature, and it isn't good at adhesive strength with Si. For above these reason, research of diffusion barrier to prevent reaction between Cu and Si and to raise adhesive strength is steadily advanced. Our study group have researched on W-C-N (tungsten-carbon-nitrogen) Diffusion barrier for preventing diffusion of Cu through semiconductor. By recent studies, It's reported that W-C-N diffusion barrier can even precent Cu and Si diffusing effectively at high temperature. In this treatise, we vaporized different proportion of N into diffusion barrier to research Cu's Electromigration based on the results and studied surface hardness in the heat process using nano scale indentation system. We gain that diffusion barrier containing nitrogen is more stable for Cu's electromigration and has stronger surface hardness in heat treatment process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.651-654
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• 2010

This paper describes the thermal and mechanical properties of doped thin film 3C-SiC and porous 3C-SiC. In this work, the in-situ doped thin film 3C-SiC was deposited by using atmospheric pressure chemical vapor deposition (APCVD) method at $120^{\circ}C$ using single-precursor hexamethyildisilane: $Si_2(CH_3)_6$ (HMDS) as Si and C precursors. 0~40 sccm $N_2$ gas was used as doping source. After growing of doped thin film 3C-SiC, porous structure was achieved by anodization process with 380 nm UV-LED. Anodization time and current density were fixed at 60 sec and 7.1 mA/$cm^2$, respectively. The thermal and mechanical properties of the $N_2$ doped porous 3C-SiC was measured by temperature coefficient of resistance (TCR) and nano-indentation, respectively. In the case of 0 sccm, the variations of TCR of thin film and porous 3C-SiC are similar, but TCR conversely changed with increase of $N_2$ flow rate. Maximum young's modulus and hardness of porous 3C-SiC films were measured to be 276 GPa and 32 Gpa at 0 sccm $N_2$, respectively.

• Corrosion Science and Technology
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• v.17 no.3
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• pp.101-108
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• 2018

AA7010 is an Al-Zn-Mg-Cu alloy containing Zr, developed as an alternate to traditional AA7075 alloy owing to their high strength combined with better fracture toughness. It is necessary to improve the corrosion resistance and surface properties of the alloy by incorporating plasma electrolytic oxidation (PEO) method. AA7010-T7452 aluminum alloy has been processed through the forging route with multi-stage working operations, and was coated with $10{\mu}m$ thick $Al_2O_3$ ceramic aluminina coating using the plasma electrolytic oxidation (PEO) method. The corrosion, stress corrosion cracking (SCC) and nano-mechanical behaviours were examined by means of potentiodynamic polarization, slow strain rate test (SSRT) and nano-indentation tests. The results indicated that the additional thermomechanical treatment during the forging process caused a fully recrystallized microstructure, which lead to the poor environmental cracking resistance of the alloy in 3.5% NaCl solution, despite the overaging treatment. Although the fabricated PEO coating improved general corrosion resistance, the brittle nature of the coating did not provide any improvement in SCC resistance of the alloy. However, the hardness and elastic modulus of the coating were significantly higher than the base alloy.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.31 no.10
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• pp.73-78
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• 2003

MEMS technology in the field of aerospace engineering is more important with light weight and high resolution. Therefore the investigation of thin films properties is issued and the residual stress of thin filrns is one of the important problems to solve. Ion implantation without thermal annealing is applied for the stress gradient relaxation of LPCVD polysilicon films used as the structural part in MEMS. He+ and Ar+ ion implantations reduce the stress gradient of polysilicon films. The property modification of polysilicon films by ion implantation is also investigated. The elastic modulus and hardness of polysilicon films with ion implantation is studied by CSM method which is an advanced nano-indentation method. Ion implantation decreases the elastic modulus and hardness of polysilicon films. However, they are improved with increasing ion dose.

• Transactions of Materials Processing
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• v.17 no.8
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• pp.633-642
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• 2008

It's important to measure quantitative properties about thermal-nano behavior of polymer for producing high quality components using Nanoimprint lithography process. Nanoscale indents can be used to make the cells for molecular electronics and drug delivery, slots for integration into nanodevices, and defects for tailoring the structure and properties. In this study, formability of polymethylmetacrylate(PMMA) and polycarbonate(PC) were characterized Polymer has extreme variation in thermo mechanical variation during forming high temperature. Because of heating the polymer, it becomes softer than at room temperature. In this case it is particularly important to study high temperature-induced mechanical properties of polymer. Nanoindenter XP(MTS) was used to measure thermo mechanical properties of PMMA and PC. Polymer was heated by using the heating stage on NanoXP. At CSM(Continuous Stiffness Method) mode test, heating temperature was $110^{\circ}C,120^{\circ}C,130^{\circ}C,140^{\circ}C$ and $150^{\circ}C$ for PMMA, $140^{\circ}C,150^{\circ}C,160^{\circ}C,170^{\circ}C$ and $180^{\circ}C$ for PC, respectively. Maximum indentation depth was 2000nm. At basic mode test, heating temperature was $90^{\circ}C$ and $110^{\circ}C$ for PMMA, $140^{\circ}C,160^{\circ}C$ for PC. Maximum load was 10mN, 20mN and 40mN. Also indented pattern was observed by using SEM and AFM. Mechanical properties of PMMA and PC decreased when temperature increased. Decrease of mechanical properties from PMMA went down rapidly than that of PC.

• Journal of the Korean Society for Heat Treatment
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• v.36 no.3
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• pp.128-136
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• 2023

In this study, the effects of heat treatment on the nano-scale creep behavior of CoCrFeMnNi high-entropy alloy (HEA) processed by high-pressure torsion (HPT) was investigated through nanoindentation technique. Nanoindentation experiments with a Berkovich indenter were performed on HPT-processed alloy subjected to heat treatment at 450℃, revealing that the hardness of the HPT-processed alloy (HPT sample) significantly increased with the heat treatment time. The heat treatment-induced microstructural change in HPT-processed alloy was analyzed using transmission electron microscopy, which showed the nano-sized Cr-, NiMn-, and FeCo-rich phases were formed in the HPT-processed alloy subjected to 10 hours of heat treatment (HPT+10A sample). To compare the creep behavior of HPT and HPT+10A samples, constant load nanoindentation creep experiments were performed using spherical indentation indenters with two different radii. It was revealed that the predominant mechanism for creep highly depended on the applied stress level. At low stress level, both HPT and HPT+10A samples were dominated by Coble creep. At high stress level, however, the mechanism transformed to dislocation creep for HPT sample, but continued to be Coble creep for HPT+10A sample, leading to higher creep resistance in the HPT+10A sample.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.165-166
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• 2002

Hydrogen free diamond like carbon (DLC) films were prepared on steel substrates by using a single ion beam in a configuration that allowed sputtering of a graphite target and at the same time allowed to impact the substrate at a grazing angle. The DLC films so prepared have improved properties with increased disorder and with modest hardness that is slightly higher than previously reported values. We have studied the effects of $N_2^+$ ions implantation on such films. It is found that the implantations of nitrogen ions into DLC films lead to chemical modifications that allowed N atoms to be incorporated into the carbon network to produce a nitrogenated DLC. Nano-indentation experiments indicated that the nitrogenated films have consistently higher hardnesses ranging from 30 to 45GPa, which represents a considerable increase in surface hardness, compared with non-nitrogenated precursor films. The investigations by XPS and Raman spectroscopy suggests that the $N_2^+$ implanted DLCs had undergone both chemical and structural modifications through the incorporation of N atoms and the increased ratio of $sp^3/sp^2$ type bonding. The observed high hardness was therefore attributable to these structural and chemical modifications. This result has implication for the preparation of super hard wear resistant films required for tribological functions in devices.

• Journal of the Korean Society for Precision Engineering
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• v.30 no.5
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• pp.552-558
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• 2013

In recent years the interest on flexible display has been increasing as a future display due to its bendable characteristics. An ITO(indium tin oxide) layer, which is part of a flexible display, can be broken easily while bending because it is made of brittle materials. This brittle property can cause the malfunction of flexible display. To analyze fracture characteristics of ITO layer, bending test was conducted commonly. However, it is not possible to know specific phenomena on bended ITO layer by simple bending test only. Accordingly, in this study, the FE(finite element) model is developed similarly to a real flexible display to analyze stress distribution of flexible display under bending condition, especially on ITO layer. To validate FE model, actual bending test was conducted and the test results were compared with the simulation results by measuring reaction forces during bending. By using the developed model, FE analysis about the effect of design parameter (Thickness & Young's Modulus of BL) on ITO Layer was performed. By explained FE analysis above, this research draws a conclusion of reliable design guide of flexible display, especially on ITO layer.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1115-1119
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• 2005

The paper proposes the elastic modulus evaluation technique of a cantilever beam by vibration analysis based on time-average electronic speckle pattern interferometry (TA-ESPI) with non-contact and nondestructive and Euler-Bernoulli equation. General approaches for the measurement of elastic modulus of thin film are Nano indentation test, Bulge test and Micro-tensile test and so on. They each have strength and weakness in the preparation of test specimen and the analysis of experimental result. ESPI has been developed as a common measurement method for vibration mode visualization and surface displacement. Whole-field vibration mode shape (surface displacement distribution) at a resonance frequency can be visualized by ESPI. And the maximum surface displacement distribution from ESPI is a clue to find the resonance frequency at each vibration mode shape. And the elastic modules of test material can be easily estimated from the measured resonance frequency and Euler-Bernoulli equation. The TA-ESPI vibration analysis technique is able to give the elastic modulus of materials through the simple processing of preparation and analysis.

• Korean Journal of Materials Research
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• v.28 no.10
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• pp.595-600
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• 2018

This study investigates the microstructural properties of CoCrFeMnNi high entropy alloy (HEA) oxynitride thin film. The HEA oxynitride thin film is grown by the magnetron sputtering method using nitrogen and oxygen gases. The grown CoCrFeMnNi HEA film shows a microstructure with nanocrystalline regions of 5~20 nm in the amorphous region, which is confirmed by high-resolution transmission electron microscopy (HR-TEM). From the TEM electron diffraction pattern analysis crystal structure is determined to be a face centered cubic (FCC) structure with a lattice constant of 0.491 nm, which is larger than that of CoCrFeMnNi HEA. The HEA oxynitride film shows a single phase in which constituting elements are distributed homogeneously as confirmed by element mapping using a Cs-corrected scanning TEM (STEM). Mechanical properties of the CoCrFeMnNi HEA oxynitride thin film are addressed by a nano indentation method, and a hardness of 8.13 GPa and a Young's modulus of 157.3 GPa are obtained. The observed high hardness value is thought to be the result of hardening due to the nanocrystalline microstructure.