• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.05a
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• pp.12-12
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• 2004

나노임프린트 관련되어 전 세계적으로 지금까지 4개회사가 장비 및 공정기술 개발을 하고 있으나 대부분 수년 전에 창업한 회사이며, 4개의 나노임프린트 장비 관련 회사는 미국의 Nanonex, 오스트리아의 EVG사, 미국의 Molecular Imprint Inc. (MII),스웨덴이 Obducat이다. 개발된 장비의 대부분은 수작업이 필요한 연구용 장비로 현재 공정 기술개발을 위해 활용되고 있으며, MI사 장비가 최초로 양산 적용을 목표로 개발하여 국내에도 도입 되어있다. 일본에서는 아직 장비 개발이 시도된 바 없으며 현재 관련 공정 기술개발을 하고 있다.(중략)

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.128-128
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• 2008

본 연구에서는 나노 임프린트 리소그래피 래피 공정과 PVA(Poly-Vinyl-Alcohol), PDMS(Poly-Dimethyl-Siloxane) template 등의 flexible template를 사용하여 평면 기판 뿐만 아니라 곡면 렌즈 위에 moth-eye 구조를 성공적으로 형성시켰으며 처리 되지 않은 렌즈에 비해 투과율이 향상되는 것을 확인하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.139-139
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• 2008

나노 임프린트 리소그래피 방법을 이용하여 매미 날개의 표면구조를 열가소성 고분자 시트 위에 역상으로 전사하였다. 그 후 표면구조가 형성된 시트의 UV-가시광선 투과도와 증류수의 접촉각을 측정함으로써 표면구조 형성을 통해 난반사 효과와 자가 세정 효과를 부여하였음을 확인하였다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.11a
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• pp.431-432
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• 2010

• Korean Journal of Materials Research
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• v.26 no.11
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• pp.635-643
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• 2016

Graphene has shown exceptional properties for high performance devices due to its high carrier mobility. Of particular interest is the potential use of graphene nanoribbons as field-effect transistors. Herein, we introduce a facile approach to the fabrication of graphene nanoribbon (GNR) arrays with ~200 nm width using nanoimprint lithography (NIL), which is a simple and robust method for patterning with high fidelity over a large area. To realize a 2D material-based device, we integrated the graphene nanoribbon arrays in field effect transistors (GNR-FETs) using conventional lithography and metallization on highly-doped $Si/SiO_2$ substrate. Consequently, we observed an enhancement of the performance of the GNR-transistors compared to that of the micro-ribbon graphene transistors. Besides this, using a transfer printing process on a flexible polymeric substrate, we demonstrated graphene-silicon junction structures that use CVD grown graphene as flexible electrodes for Si based transistors.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.343-348
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• 2007

Molecular dynamics study of thermal NIL (Nano Imprint Lithography) process is performed to examine stamp-resist interactions. A layered structure consists of Ni stamp, poly-(methylmethacrylate) thin film resist and Si substrate was constructed for isothermal ensemble simulations. Imposing confined periodicity to the layered unit-cell, sequential movement of stamp followed by NVT simulation was implemented in accordance with the real NIL process. Both vdW and electrostatic potentials were considered in all non-bond interactions and resultant interaction energy between stamp and PMMA resist was monitored during stamping and releasing procedures. As a result, the stamp-resist interaction energy shows repulsive and adhesive characteristics in indentation and release respectively and irregular atomic concentration near the patterned layer were observed. Also, the spring back and rearrangement of PMMA molecules were analyzed in releasing process.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.24.2-24.2
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• 2010

고분자 몰드를 이용한 nanoimprint lithography (NIL)는 고분자소재의 유연성과 투명성으로 인하여, 유기전자소자나 유연한 디스플레이소자 등 다양한 응용이 가능하다. 하지만, 고분자소재는 일반적으로 열저항성과 내구성이 낮아서, 고분자 몰드를 이용한 패턴형성 시, 자외선 경화방식이 주로 사용된다. 만약 복제가 쉽고, 가격이 저렴하며, 열저항성과 내구성이 강한 고분자 몰드를 제작한다면, thermoplastic-NIL 기술에 적용할 수가 있기 때문에, 고온을 요구하는 소자의 패턴형성 공정에 사용 가능하다. 본 연구에서는 이러한 고분자 몰드 제작을 위하여, 열저항성과 내구성이 강한 polyimide 필름과 polyurethane acrylate (PUA)를 기반으로 제작된 resin을 이용하였다. 먼저 Polyimide 필름 위에 자외선 노광을 사용하여, PUA resin 을 경화시킴으로써 패턴을 형성하였다. 이렇게 만들어진 몰드를 thermoplastic-NIL기술에 적용함으로써, Si 기판 위에 sub-마이크로 급 패턴을 형성하였다. 또한, 제작된 고분자 몰드를 사용하여 반복적인 NIL 공정을 수행함으로써 몰드의 내구성을 확인하였으며, 곡면 기판 위에 NIL을 함으로써 몰드의 유연성을 확인 할 수 있었다.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.16 no.1
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• pp.8-17
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• 2023

In conventional liquid crystal display(LCD) manufacturing process, Indium Tin Oxide(ITO) as transparent electrode and rubbing process of polyimide as alignment layer are essential process to apply electric field and align liquid crystal molecules. However, there are some limits that deposition of ITO requires high vacuum state, and rubbing process might damage the device with tribolectric discharge. In this paper, we made nanocomposite with PEDOT:PSS and MWNT to replace ITO and constructed alignment layer by nano imprint lithography with nano wrinkle pattern, to replace rubbing process. These replacement made that only one PEDOT:PSS/MWNT film can function as two layers of ITO and polyimide alignment layer, which means simplification of process. Transferred nano wrinkle patterns functioned well as alignment layer, and we found out lowered threshold voltage and shortened response time as MWNT content increase, which is related to increment of electric conductivity of the film. Through this study, it may able to contribute to process simplification, reducing process cost, and suggesting a solution to disadvantage of rubbing process.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.10a
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• pp.167-170
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• 2005

The two-dimensional (2D) and three-dimensional (3D) diamond-like carbon (DLC) stamps for ultraviolet nanoimprint lithography (UV-NIL) were fabricated using two kinds of methods, which were a DLC coating process followed by the focused ion beam (FIB) lithography and the two-photon polymerization (TPP) patterning followed by nano-scale thick DLC coating. We fabricated 70 nm deep lines with a width of 100 nm and 70 nm deep lines with a width of 150 nm on 100 nm thick DLC layers coated on quartz substrates using the FIB lithography. 200 nm wide lines, 3D rings with a diameter of $1.35\;{\mu}m$ and a height of $1.97\;{\mu}m$, and a 3D cone with a bottom diameter of $2.88\;{\mu}m$ and a height of $1.97\;{\mu}m$ were successfully fabricated using the TPP patterning and DLC coating process. The wafers were successfully printed on an UV-NIL using the DLC stamp. We could see the excellent correlation between the dimensions of features of stamp and the corresponding imprinted features.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.4
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• pp.1-7
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• 2007

Nanoimprint lithography (NIL) is an emerging technology enabling cost-effective and high-throughput nanofabrication. To successfully imprint a nano-sized pattern, the process conditions such as temperature, pressure, and time should be appropriately selected. This starts with a clear understanding of polymer material behavior during the NIL process. In this work, the squeezing of thin polymer films into nanocavities during the thermal NIL has been investigated based upon a two-dimensional viscoelastic finite element analysis in order to understand how the process conditions affect a pattern quality. The simulations have been performed within the viscoelastic plateau region and the stress relaxation effect has been taken into account.