• 제목/요약/키워드: Nano grain size

검색결과 207건 처리시간 0.027초

Mg-Zn-(Zr) 합금의 미세조직과 결정립의 안정성 (Microstructures and Grain Stabilities of Mg-Zn-(Zr) Alloys)

  • 전중환
    • 열처리공학회지
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    • 제23권6호
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    • pp.309-314
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    • 2010
  • Microstructures and grain growth behaviors at elevated temperatures have been investigated for extruded Mg-2%Zn and Mg-2%Zn-0.3%Zr alloys, in order to clarify the role of Zr in grain stability of Mg-Zn alloy. The grain size of Zr-free alloy increased continuously with an increase in annealing temperature, when isochronally annealed for 60 min from 573 to 723K, while the grains of the Zr-containing alloy were relatively stable up to 723 K. The activation energies for grain growth ($E_g$) between 573 and 723 K were calculated as 77.8 and 118.6 kJ/mole for the Mg-2%Zn and Mg-2%Zn-0.3%Zr alloys, respectively, which indicates that grains in the Zr-added alloy possess higher thermal stabilities at elevated temperatures. TEM observations on the annealed Mg-2%Zn and Mg-2%Zn-0.3%Zr alloys revealed that enhanced grain stability resulting from Zr addition into Mg-Zn alloy would be ascribed to the restriction of grain growth by stable Zn-Zr nano-precipitates distributed in the microstructure.

미세구조가 제어된 전해도금 Cu2O 광양극의 광전기화학 특성 (Photoelectrochemical Properties of Electrodeposited Cu2O Photocathode with Tailored Microstructures)

  • 정다솔;조우현;정재범;정현성
    • 한국표면공학회지
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    • 제53권5호
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    • pp.232-240
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    • 2020
  • Cu2O films as a photocathode for photoelectrochemical water splitting were potentiostatically deposited on FTO glasses. The morphology and composition of the electrodeposited Cu2O films were adjusted by the applied potentials. The potential-dependent grain size of Cu2O films was characterized by XRD and SEM analysis. Photoelectrochemical properties of the fabricated Cu2O photocathodes were investigated with photocurrents as a function of potentials under 1 sun condition of 100mW/㎠. Photocurrents of the electrodeposited Cu2O films were controlled with the tailored surface morphologies of Cu2O photocathodes.

초미량의 이산화질소가스 감지를 위한 텅스텐산화물계 반도체 가스 센서의 제조 및 $NO_X$ 감응 특성 (The Fabrication and $NO_X$-sensing characteristics of $WO_3$-based semiconductor gas sensor for detecting sub-ppm level of $NO_X$)

  • 이대식;임준우
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1998년도 추계종합학술대회 논문집
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    • pp.601-604
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    • 1998
  • NOX detecting gas sensors using TiO2 doped tungsten oxide semiconductor were prepared and their electrical and sensing characteristics have been investigated. In normal air condition, the sensors of WO3, TiO2 doped WO3 show grain boundary heights of 0.34 eV, 0.25 eV, respectively. The grain boundary barrier energy variation was increased by doping TiO2 into large variation of resistance to NOX gases. And doping the TiO2 4 wt.%, the particle size of WO3 polycrystal films showed higher sensitivity and better sorption characteristics to NOX gas than the pure WO3 films material in air at operating temperature of $350^{\circ}C.$ The TiO2 doped WO3 semiconductor gas sensor shows nano-sized particle size and good sensitivity to sub-ppm concentration of NOX.

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결정립제어 레오로지 소재의 입자유동 해석 (Particle Flow Analysis of Grain-Size Controlled Rheology Materials)

  • 김현일;강충길
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2004년도 추계학술대회 논문집
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    • pp.774-777
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    • 2004
  • A rheology casting technology has some advantages compared with conventional forming processes such as die casting, squeeze casting and hot/cold forming. The liquid segregation is important on mechanical properties of materials using rheology casting. In this study, so, molecular dynamics simulations were performed for the control of liquid segregation. Because the dynamics of fluid flow about nano-scaled materials is completely different from continuum, molecular dynamics simulations were used. The behavior of particles was far from the truth according to boundary conditions in simple flow. But various movement of particles appear at two or more molecular simulations.

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나노 구조 Fe-Co 합금분말의 제조 및 자성특성 (Fabrication and Magnetic Properties of Nanostructured Fe-Co Alloy Powder)

  • 이백희;안봉수;김대건;김영도
    • 한국분말재료학회지
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    • 제9권3호
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    • pp.182-188
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    • 2002
  • Conventional Fe-Co alloys are important soft magnetic materials that have been widely used in industry. Compared to its polycrystalline counterpart, the nanostructured materials have showed superior magnetic properties, such as higher permeability and lower coercivity due to the single domain configuration. However, magnetic properties of nanostructured materials are affected in complicated manner by their microstructure such as grain size, internal strain and crystal structure. Thus, studies on synthesis of nanostructured materials with controlled microstructure are necessary for a significant improvement in magnetic properties. In the present work, starting with two powder mixtures of Fe and Co produced by mechanical alloying (MA) and hydrogen reduction process (HRP), differences in the preparation process and in the resulting microstructural characteristics will be described for the nano-sized Fe-Co alloy particles. Moreover, we discuss the effect of the microstructure such as crystal structure and grain size of Fe-Co alloys on the magnetic properties.

Nanostructure Ceramics of Silicon Nitride Produced by Spark Plasma Sintering

  • Hojo, Junichi;Hotta, Mikinori
    • 한국분말야금학회:학술대회논문집
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    • 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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    • pp.323-324
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    • 2006
  • The nanostructure control of $Si_3N_4$ ceramics can be achieved by using fine starting powder and retardation of grain growth. The spark plasma sintering technique is useful to retard the grain growth by rapid heating. In the present work, the change of microstructure was investigated with emphasis on the particle size of starting powder, the amount of sintering additive and the heating schedule. The rapid heating by spark plasma sintering gave the fine microstructure consisting of equiaxed grains with the same size as starting particles. The spark plasma sintering of $Si_3N_4$ fine powder was effective to control the microstrucutre on nano-meter level.

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Characterization of Nano-Grained ZnO Piezoelectric Thin Films Deposited under Various Sputtering Conditions

  • Zhang, Ruirui;Lee, Eunju;Yoon, Giwan
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2009년도 추계학술대회
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    • pp.428-430
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    • 2009
  • 본 논문은 RF 마그네트론 스퍼터링 시스템을 이용하여 p-Si (100) 기판위에 증착된 C축 배향을 가지는 ZnO 박막의 특성을 분석하고 있다. 증착 전력, 공정 압력, 반응가스로 사용된 산소 가스의 비율과 같은 증착 조건들을 변화시켰을 때, ZnO 박막의 결정구조의 변화를 분석한다. 증착된 ZnO 박막의 결정 구조는 주사 전자 현미경(scanning electron microscope, SEM)을 이용하여 조사되었다. 분석 결과 증착 파라미터들은 증착된 ZnO 박막의 결정(grain) 크기와 배향 특성에 강한 영향을 미친다는 사실을 알 수 있다.

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Effect of dopants(Tri-valent, Penta-valent) on the electrical and optical properties of SnO2 based transparent electrodes

  • Kim, G.W.;Sung, C.H.;Seo, Y.J.;Park, K.Y.;Heo, S.N.;Lee, S.H.;Koo, B.H.
    • Journal of Ceramic Processing Research
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    • 제13권spc2호
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    • pp.394-397
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    • 2012
  • In this work, we studied the influence of the dopant elements concentration on the properties of SnO2 thin films deposited by pulsed laser deposition. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Hall effect measurement and UV-Vis studies were performed to characterize the deposited films. XRD results showed that the films had polycrystalline nature with tetragonal rutile structure. FE-SEM micrographs revealed that the as deposited films composed of dense microstructures with uniform grain size distribution. All the films show n-type conduction and the best transparent conductive oxide (TCO) performance was obtained on 6 wt% Sb2O5 doped SnO2 film prepared at pO2 of 60mtorr and Ts of 500 ℃. Its resitivity, optical transmittance, figure of merit are 7.8 × 10-4 Ω cm, 85% and 1.2 × 10-2 Ω-1, respectively.

Electrical Properties of MIM and MIS Structure using Carbon Nitride Films

  • Lee, Hyo-Ung;Lee, Sung-Pil
    • Transactions on Electrical and Electronic Materials
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    • 제7권5호
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    • pp.257-261
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    • 2006
  • Nano-structured carbon nitride $(CN_x)$ films were prepared by reactive RF magnetron sputtering with a DC bias at various deposition conditions, and the physical and electrical properties were investigated. FTIR spectrum indicated an ${alpha}C_3N_4$ peak in the films. The carbon nitride film deposited on Si substrate had a nano-structured surface morphology. The grain size was about 20 nm and the deposition rate was $1.7{\mu}m/hr$. When the $N_2/Ar$ ratio was 3/7, the level of nitrogen incorporation was 34.3 at%. The film had a low dielectric constant. The metal-insulator-semiconductor (MIS) capacitors that the carbon nitride was deposited as insulators, exhibited a typical C-V characteristics.

Thickness Dependence of the Electrical Properties in NiCr Thin Film Resistors Annealed in a Vacuum Ambient for π - type Attenuator Applications

  • Phuong Nguyen Mai;Lee Won-Jae;Yoon Soon-Gil
    • 한국전기전자재료학회논문지
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    • 제19권8호
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    • pp.712-716
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    • 2006
  • NiCr thin films prepared on $SiO_2/Si$ substrates at room temperature by magnetron co-sputtering technique and then annealed in a vacuum ambient $(3{\times}10^{-6}\;Torr)\;at\;400^{\circ}C$. The grain size and crystallinity of the films increased with film thickness. The resistivity of the films slightly decreases as the film thickness increases, Temperature coefficient resistance (TCR) exhibits positive values irrespective of film thickness and TCR in the range of 50 to 400 nm thickness shows suitable values for the application of 10 dB in ${\pi}-type$ attenuators.