• Bulletin of the Korean Chemical Society
• /
• v.33 no.1
• /
• pp.189-193
• /
• 2012

ZnO nanorods were grown on the $Cd_xZn_{1-x}O$ seed layers with various Cd mole fractions by hydrothermal method. The effects of the Cd mole fraction for $Cd_xZn_{1-x}O$ seed layers on the structural and optical properties of the ZnO nanorods were investigated by scanning electron microscopy, X-ray diffraction, and photoluminescence. The narrowest full-width at half-maximum and largest grain size of the $Cd_xZn_{1-x}O$ seed layers, indicating improvement in crystal quality, were observed at the Cd mole fraction of 0.5. At the Cd mole fraction of 0.5, the largest enhancement in the density, the crystal quality, and the growth rate of the ZnO nanorods was observed while their appearance was not affected significantly by the incorporation of the Cd in the $Cd_xZn_{1-x}O$ seed layers. Consequently, the luminescent properties of the ZnO nanorods were enhanced. The largest improvement in the structural and optical properties of the ZnO nanorods was observed at the Cd mole fraction of 0.5.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.204.2-204.2
• /
• 2013

Wide band gap II-VI semiconductors have attracted the interest of many research groups during the past few years due to the possibility of their applications in light-emitting diodes and laser diodes. Among the II-VI semiconductors, ZnO is an important optoelectronic device material for use in the violet and blue regions because of its wide direct band gap (Eg ~3.37 eV) and large exciton binding energy (60 meV). F-doped ZnO (FZO) and undoped ZnO thin films were grown onto quartz substrate by the sol-gel spin-coating method. The doping level in the solution, designated by F/Zn atomic ratio of was varied from 0 to 5 in 1 steps. To investigate the effects of the structure and optical properties of FZO thin films were investigated using X-ray diffraction (XRD), UV-visible spectroscopy, and photoluminescence (PL). In the XRD, the residual stress, FWHM, bond length, and average grain size were changed with increasing the doping concentration. For the PL spectra, the high INBE/IDLE ratio of the FZO thin films doping concentration at 1 at.% than the other samples.

• Korean Journal of Metals and Materials
• /
• v.49 no.7
• /
• pp.583-588
• /
• 2011

$Cd_xZn_{1-x}O$ thin films were grown on quartz substrates by using the sol-gel spin-coating method. The mole fraction, x, of the $Cd_xZn_{1-x}O$ thin films was controlled from 0 to 1 by changes in the content ratio of the cadmium acetate dehydrate [$Cd{(CH_3COO)}_2{\cdot}2H_2O$] and zinc acetate dehydrate [$Zn{(CH_3COO)}_2{\cdot}2H_2O$]. The effects of the mole fraction on the morphological, structural, and optical properties of the $Cd_xZn_{1-x}O$ thin films were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and UV-visible spectroscopy. The $Cd_xZn_{1-x}O$ thin films exhibited the polygonal surface morphology and their grain size was increased ranging from 42.1 to 63.9 nm with the increase in the mole fraction. It was observed that the absorption bandgap of the $Cd_xZn_{1-x}O$ thin films decreased from 3.25 to 2.16 eV as the mole fraction increased and the Urbach energy ($E_U$) values changed inversely to the optical bandgap of the $Cd_xZn_{1-x}O$ thin films.

• Korean Journal of Materials Research
• /
• v.21 no.8
• /
• pp.444-449
• /
• 2011

Nano-sized $Y_2O_3$ powders were prepared via a sol-gel method starting with $Y(NO_3)_3{\cdot}6H_2O$ (Yttrium(III) nitrate hexahydrate) and water with ethanol as a cosolvent. $Y_2O_3$ is an important rare earth oxide and has been considered for use in nuclear applications, such as ceramic materials, due to its excellent optical and refractory characteristics. It has been used as a chemically stable substrate, a crucible material for melting reactive metals, and a nozzle material for jet casting molten rare earth-iron magnetic alloys. Oxalic acid ($C_2H_2O_4$) has been adopted as a chelating agent in order to control the rate of hydrolysis and polycondensation, and ammonia was added in order to adjust the base condition. The synthesized $Y_2O_3$ powder was characterized using TG/DTA, XRD, FE-SEM, BET and Impedance Analyzer analyses. The powder changed its properties in accordance with the pH conditions of the catalyst. As the pH increases according to the FE-SEM, the grain grew and it showed that the pore size decreased while confirming the effect of the grain size. The nano-material $Y_2O_3$ powders demonstrated that the surface area was improved with the addition of oxalic acid with ammonium hydroxide.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.23 no.1
• /
• pp.145-149
• /
• 2023

High-resolution images of surfaces provide detailed information on pores or shapes with specific sizes ranging from nano sizes to micrometers. However, it is not yet clear to determine an efficient association for pores or shapes from high-resolution images of surfaces. For the efficient association of pores and shapes, the surface characteristics of the device were considered as fractal dimensions by taking SEM photographs and binarizing the images. The fractal program was directly coded for surface analysis of the device. The device surface characteristics and electrical characteristics are thought to be related to the fractal dimension. The fractal dimension decreased with an increase in internal pores. The density and grain boundary of particles, which are structural characteristics of the device surface, were related to the fractal dimension. The particle size decreased with an increase in the fractal dimension and was uniformly formed. When the particles were uniformly formed, fewer pores were present and the fractal dimension increased.

• Korean Journal of Materials Research
• /
• v.20 no.7
• /
• pp.374-378
• /
• 2010

$MgTiO_3$ thin films were prepared by r.f. magnetron sputtering in order to prepare miniaturized NPO type MLCCs. $MgTiO_3$ films showed a polycrystalline structure of ilmenite characterized by the appearance of (110) and (202) peaks. The intensity of the peaks decreased with an increase in the chamber pressure due to the decrease of crystallinity which resulted from the decrease of kinetic energy of the sputtered atoms. The films annealed at $600^{\circ}C$ for 60min. showed a fine grained microstructure without micro-cracks. The grain size and roughness of the $MgTiO_3$ films decreased with the increase of chamber pressure. The average surface roughness was 1.425~0.313 nm for $MgTiO_3$ films prepared at 10~70 mTorr. $MgTiO_3$ films showed a dielectric constant of 17~19.7 and a dissipation factor of 2.1~4.9% at 1MHz. The dielectric constant of the films is similar to that of bulk ceramics. The dielectric constant and the dissipation factor decreased with the increase of the chamber pressure due to the decrease of grain size and crystallinity. The leakage current density was $10^{-5}\sim10^{-7}A/cm^2$ at 200kV/cm and this value decreased with the increase of the chamber pressure. The small grain size and smooth surface microstructure of the films deposited at high chamber pressure resulted in a low leakage current density. $MgTiO_3$ films showed a near zero temperature coefficient and satisfied the specifications for NPO type materials. The dielectric properties of the $MgTiO_3$ thin films prepared by sputtering suggest the feasibility of their application for MLCCs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.6
• /
• pp.433-439
• /
• 2011

Poly Si TFTs (poly silicon thin film transistors) with p channel those are annealed HT (high temperature) with gate poly crystalline silicon and LT (low temperature) with metal gate electrode were fabricated on quartz substrate using the analyzed data and compared according to the activated grade silicon thin films and the size of device channel. The electrical characteristics of HT poly-Si TFTs increased those are the on current, electron mobility and decrease threshold voltage by the quality of particles of active thin films annealed at high temperature. But the on/off current ratio reduced by increase of the off current depend on the hot carrier applied to high gate voltage. Even though the size of the particles annealed at low temperature are bigger than HT poly-Si TFTs due to defect in the activated grade poly crystal silicon and the grain boundary, the characteristics of LT poly-Si TFTs were investigated deterioration phenomena those are decrease the electric off current, electron mobility and increase threshold voltage. The results of transconductance show that slope depend on the quality of particles and the amplitude depend on the size of the active silicon particles.

• Journal of the Korean institute of surface engineering
• /
• v.43 no.4
• /
• pp.194-198
• /
• 2010

Indium doped zinc oxide films (ZIO) were deposited on non-alkali glass substrates by radio frequency (RF) magnetron sputtering at room temperature. The structural, electrical and optical properties of the ZIO films were investigated as a function of their $In_2O_3$ content (3.33-15.22 wt%). The ZIO films deposited with an $In_2O_3$ content of 9.54 wt% showed a relatively low resistivity of $9.13{\times}10^{-4}{\Omega}cm$ and a highly c-axis preferred orientation. The grain size and FWHM were mainly affected by the $In_2O_3$ content. The crystallinity and resistivity were enhanced with increasing grain size. The average transmittance of the ZIO films was over 85% in the visible region and their band gap varied from 3.22 to 3.66 eV depending on their doping ratio.

• Nuclear Engineering and Technology
• /
• v.51 no.5
• /
• pp.1365-1372
• /
• 2019

The effects of Y and Ti on the microstructure stability and tensile properties of the reduced activation ferritic/martensitic steel have been investigated. The addition of Y and Ti affected the prior austenite grain size due to the pinning of the inclusions. Ti addition of 0.008 wt% to the steel was intended to promote the precipitation of nano-sized carbides with a high resistance to coarsening. 8Ti14Y exhibited a higher yield strength and a lower DBTT than the other alloys due to the fine grain size and additional precipitation hardening by (Ti, Ta)-rich MX. After thermal exposure at $550^{\circ}C$ for 1500 h, yield strength was dropped significantly in exposed 0Ti13Y. On the contrary, a lower reduction of YS was observed in 8Ti14Y. The $M_{23}C_6$ in 0Ti13Y and 8Ti14Y and MX in 25Ti14Y and 39Ti15Y coarsened seriously during ageing, which could be responsible for the reduction of the tensile properties of alloys.

• Journal of the Korean Ceramic Society
• /
• v.44 no.4 s.299
• /
• pp.208-213
• /
• 2007

Alumina/silver ($Al_2O_3/Ag$) nanocomposites with Ag content up to 9 vol% were prepared from nanopowder by soaking method using ${\gamma}-Al_2O_3$ of needle type and spark plasma sintering (SPS). The mechanical properties of specimens were investigated three-point flexural strength and toughness as a function of the Ag contents. The maximum flexural strength of the alumina/silver nanocomposite was 850 MPa for the 1 vol% composite, and also higher than monolith alumina as about 800 MPa at 3, 5, and 7 vol% Ag contents. Fracture toughness by single edged V-notch beam (SEVNB) was $4.05MPa{\cdot}m^{1/2}$ for the 3 vol% composite and maintained about $4.00MPa{\cdot}m^{1/2}$ at 5, and 7 vol% Ag content. Microstructure of fracture surface for each fracture specimens was observed. Due to the inhibition effect of alumina grain growth, the average grain size of nanocomposites depends on the content of Ag nano particles. The fracture morphology of nanocomposite with dislocation (sub-grain boundary) by silver nano-particles of second phases in the alumina matrix also showed transgranular fracture-mode compare with intergranular of monolith alumina. Thermal conductivity of specimens at room temperature was about 40 W/mK for the 1 vol% Ag content.