• 한국산학기술학회논문지
• /
• 제11권10호
• /
• pp.3928-3934
• /
• 2010

본 논문에서는 움직임에 의해 흐려지고 잡음으로 훼손된 영상에 대하여 영상전체에 일률적으로 복원처리를 행하는 기존의 적용방법들에서 나타나는 문제점을 해결하고자 영상의 국부적인 특성과 방향성을 고려한 복원방법을 제시한다. 이는 평면영역과 윤곽영역을 적응적으로 처리하기 위하여 윤곽의 방향성을 찾기 위하여 다해상도 신호분석인 Wavelet 계수를 적용하여 처리하는 방법을 제안한다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.32-32
• /
• 2011

Plasma etching is used in microelectronic processing for patterning of micro- and nano-scale devices. Commonly, optical emission spectroscopy (OES) is widely used for real-time endpoint detection for plasma etching. However, if the viewport for optical-emission monitoring becomes blurred by polymer film due to prolonged use of the etching system, optical-emission monitoring becomes impossible. In addition, when the exposed area ratio on the wafer is small, changes in the optical emission are so slight that it is almost impossible to detect the endpoint of etching. For this reason, as a simple method of detecting variations in plasma without contamination of the reaction chamber at low cost, a method of measuring plasma impedance is being examined. The object in this research is to investigate the suitability of using plasma impedance monitoring (PIM) with statistical approach for real-time endpoint detection of $SiO_2$ etching. The endpoint was determined by impedance signal variation from I-V monitor (VI probe). However, the signal variation at the endpoint is too weak to determine endpoint when $SiO_2$ film on Si wafer is etched by fluorocarbon plasma on inductive coupled plasma (ICP) etcher. Therefore, modified principal component analysis (mPCA) is applied to them for increasing sensitivity. For verifying this method, detected endpoint from impedance analysis is compared with optical emission spectroscopy (OES). From impedance data, we tried to analyze physical properties of plasma, and real-time endpoint detection can be achieved.

• ETRI Journal
• /
• 제45권4호
• /
• pp.570-580
• /
• 2023

Sensor nodes are the most significant part of a wireless sensor network that offers a powerful combination of sensing, processing, and communication. One major challenge while designing a sensor node is power consumption, as sensor nodes are generally battery-operated. In this study, we proposed the design of a low-power, long range-based wireless sensor node with flexibility, a compact size, and energy efficiency. Furthermore, we improved power performance by adopting an efficient hardware design and proper component selection. The Nano Power Timer Integrated Circuit is used for power management, as it consumes nanoamps of current, resulting in improved battery life. The proposed design achieves an off-time current of 38.17309 nA, which is tiny compared with the design discussed in the existing literature. Battery life is estimated for spreading factors (SFs), ranging from SF7 to SF12. The achieved battery life is 2.54 years for SF12 and 3.94 years for SF7. We present the analysis of current consumption and battery life. Sensor data, received signal strength indicator, and signal-to-noise ratio are visualized using the ThingSpeak network.

• Transactions on Electrical and Electronic Materials
• /
• 제11권3호
• /
• pp.106-111
• /
• 2010

The convergence of significantly different and disparate technologies such as spintronics, carbon nano tube field effect transistors, photon and bio-responsive molecular switches, memristor and memristive systems and metamaterials, coupled with energy scavenging sources are gaining a renewed focus in the quest for new products. This paper will provide an insight into an anticipated technological revolution and will highlight a futuristic Roadmap to capture opportunities that are brought about as the results of formulation of new circuit components basically driven by emergence of nanoscale materials as part of System on System integration. Challenges as the result of new lumped components such as memristor, metamaterial-based lumped components and the like that will challenge the designers' comfort zone will also be discussed.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
• /
• pp.137-137
• /
• 2003

Optical amplificator have been used to compensate the losses in the optical signal transmission and processing. Today, there has been increasing demand for the very low cost optical amplifier. Sol-gel offers considerable potential both low cost manufacture, and for great flexibility in materials composition and structure. In addition, the sol-gel process is a very attractive method for producing porous materials with controlled structure. In this work, we present the potoluminescence properties of Er doped A1$_2$O$_3$/SiO$_2$ films. Erbium doped alumina nano sol was prepared by Al(NO$_3$)$_3$.9$H_2O$ and Er(NO$_3$)$_3$.5$H_2O$ through hydrolysis and peptization, and then GPS (3-Glycidoxypropyltrimethoxysilane) was added into Er doped alumina nano sol for organic- inorganic hybridization. Er doped A1$_2$O$_3$/SiO$_2$ film was obtained by spin coating, dip coating and thermal treatment from 30$0^{\circ}C$~120$0^{\circ}C$, and there were crack-free after thermal treatment. The thickness of film was measured SEM, and the porosity of film was characterized by BET and TGA. The crystal phase of Er doped A1$_2$O$_3$/SiO$_2$ were determined by XRD. Finally, the photoluminescence properties of Er doped A1$_2$O$_3$/SiO$_2$ films will be discuss with the consideration of porosity and crystallity.

• 센서학회지
• /
• 제19권2호
• /
• pp.149-154
• /
• 2010

Top of the alumina body which is made according to plan has been printed using a screen printer equipment in order to print an electrode pattern. The electrode is connected with the quartz crystal oscillator of the piezoelectricity method which has a piezoelectric characteristic. The pressure contact department has been experimented using three type of the teflon. The teflon is good for pressure delivery vector but it is bad restitution. So we devised the structure which inserts the metal in the teflon. Bottom of the module is connected with the signal processing department which is planned in advance and then has investigated to characteristic. Therefore we have got the best output-voltage and frequency characteristic follows in the pressure.