• Journal of the Microelectronics and Packaging Society
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• v.17 no.1
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• pp.33-39
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• 2010

Printing technologies have been indicated as alternative methods for patterning conductive, semi-conductive or insulative materials on account of their low-cost, large-area patternability and pattern flexibility. For application of the printing technologies in manufacture of semiconductor or display modules, ink or paste composed of nanoparticles, solvent and additives are basically needed. Here, we report recent advances in eco-friendly nano-ink technology for semiconductor and display technology. Then, we will introduce an eco-friendly ink formation technology developed in our group with an example of manufacturing $SiO_2$ nanopowders and inks. We tried to manufacture ultrafine $SiO_2$ nanoparticles by applying a low-temperature synthetic method, and then attempted to fabricate the printed $SiO_2$ film onto the glass substrate to see whether the $SiO_2$ nanoparticles are feasible for the printing or not. Finally, the electrical characteristics of the films were measured to investigate the effect of the manufacturing parameters.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.53-58
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• 2018

Since the scaling-down of IC devices has been reached to their physical limitations, several innovative packaging technologies such as 3D packaging, embedded packaging, and fan-out wafer level packaging (FOWLP) are actively studied. In this study the fabrication of organic-inorganic dielectric material was evaluated for the use of multi-structured redistribution layers (RDL) in FOWLP. Compared to current organic dielectrics such as PI or PBO an organic-inorganic hybrid dielectric called polysilsesquioxane (PSSQ) can improve mechanical, thermal, and electrical stabilities. polysilsesquioxane has also an excellent advantage of simultaneous curing and patterning through UV exposure. The polysilsesquioxane samples were fabricated by spin-coating on 6-inch Si wafer followed by pre-baking and UV exposure. With the 10 minutes of UV exposure polysilsesquioxane was fully cured and showed $2{\mu}m$ line-pattern formation. And the dielectric constant of cured polysilsesquioxane dielectrics was ranged from 2.0 to 2.4. It has been demonstrated that polysilsesquioxane dielectric can be patterned and cured by UV exposure alone without a high temperature curing process.

• Journal of the Korean Magnetics Society
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• v.18 no.2
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• pp.49-53
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• 2008

Magnetic and crystallographic properties of patterned media fabricated by nanoimprint lithography and Co-Pt electroplating were studied. Thin films of Ru(20 nm)/Ta(5 nm)/$SiO_2$(100 nm) were deposited on Si(100) wafer and then 25 nm hole pattern was fabricated by nanoimprint lithography on substrate. The electroplated Co-Pt nano-dots have the diameter of 35 nm and the height of 27 nm. Magnetic dot patterns of Co-Pt alloy were created using electroplated Co-Pt alloy and then their properties were measured by MFM, SQUID, SEM, TEM and AFM. We observed single domain with perendicular anisotropy for each dot and achieved optimum coercivity of 2900 Oe. These results mean that patterned media fabricated by nanoimprint lithography and electroplating have good properties in view of extending superparamagnetic limit while satisfying the writability requirements with the present write heads.