• Journal of the Optical Society of Korea
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• v.9 no.1
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• pp.16-21
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• 2005

Using a cantilever type nanoprobe having a 100㎚m aperture at the apex of the pyramidal tip of a near-field scanning optical microscope (NSOM), nanopatterning of polymer films are conducted. Two different types of polymer, namely a positive photoresist (DPR-i5500) and an azopolymer (Poly disperse orange-3), spincoated on a silicon wafer are used as the substrate. A He-Cd laser with a wavelength of 442㎚ is employed as the illumination source. The optical near-field produced at the tip of the nanoprobe induces a photochemical reaction on the irradiated region, leading to the fabrication of nanostructures below the diffraction limit of the laser light. By controlling the process parameters properly, nanopatterns as small as 100㎚ are produced on both the photoresist and azopolymer samples. The shape and size variations of the nanopatterns are examined with respect to the key process parameters such as laser beam power, irradiation time or scanning speed of the probe, operation modes of the NSOM (DC and AC modes), etc. The characteristic features during the fabrication of ordered structures such as dot or line arrays using NSOM lithography are investigated. Not only the direct writing of nano array structures on the polymer films but also the fabrication of NSOM-written patterns on the silicon substrate were investigated by introducing a passivation layer over the silicon surface. Possible application of thereby developed NSOM lithography technology to the fabrication of data storage is discussed.

• Applied Microscopy
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• v.34 no.1
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• pp.13-21
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• 2004

The high voltage electron microscope (HVEM) newly installed in KBSI is an advanced transmission electron microscope capable of atomic resolution (${\leq}1.2{\AA}$ point-to-point resolution) together with high titling function (${\pm}60^{\circ}$), which are suitable to do 3-dimensional atomic imaging of a specimen. In addition, the instrument can be controlled by remote operation system, named as 'FasTEM' for the HVEM, which is favorable to overcome some environmental obstacles resulting from the direct operation. The FasTEM remote operation system has been established between the headquarter of KBSI in Daejeon and the Seoul branch. The server system in the headquarter has been connected with a portable client console system in the Seoul branch using an advanced internet resource, 'KOREN' of 155 Mbps grade. Most of the HVEM functions essential to do remote operation are available on the portable client console. The experiment to acquire the high resolution image of [001] Au has been achieved by excellent transmission of control signals and communication with the HVEM. Real-time reaction like direct operation, such as controls of the illumination and projection parameters, acquisition and adjustment of each detector signal, and electrical steering of each motor-driven system has been realized in remote site. It is positively anticipated that the first remote operation of HVEM in conjunction with IT infraengineering plays a important role in constructing the network based e-Science Grid in Korea for national user s facilities.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.184-184
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• 2012

Recently, InGaN/GaN multi-quantum well grown on GaN pyramid structures have attracted much attention due to their hybrid characteristics of quantum well, quantum wire, and quantum dot. This gives us broad band emission which will be useful for phosphor-free white light emitting diode. On the other hand, by using quantum dot emission on top of the pyramid, site selective single photon source could be realized. However, these structures still have several limitations for the single photon source. For instance, the quantum efficiency of quantum dot emission should be improved further. As detection systems have limited numerical aperture, collection efficiency is also important issue. It has been known that micro-cavities can be utilized to modify the radiative decay rate and to control the radiation pattern of quantum dot. Researchers have also been interested in nano-cavities using localized surface plasmon. Although the plasmonic cavities have small quality factor due to high loss of metal, it could have small mode volume because plasmonic wavelength is much smaller than the wavelength in the dielectric cavities. In this work, we used localized surface plasmon to improve efficiency of InGaN qunatum dot as a single photon emitter. We could easily get the localized surface plasmon mode after deposit the metal thin film because lnGaN/GaN multi quantum well has the pyramidal geometry. With numerical simulation (i.e., Finite Difference Time Domain method), we observed highly enhanced decay rate and modified radiation pattern. To confirm these localized surface plasmon effect experimentally, we deposited metal thin films on InGaN/GaN pyramid structures using e-beam deposition. Then, photoluminescence and time-resolved photoluminescence were carried out to measure the improvement of radiative decay rate (Purcell factor). By carrying out cathodoluminescence (CL) experiments, spatial-resolved CL images could also be obtained. As we mentioned before, collection efficiency is also important issue to make an efficient single photon emitter. To confirm the radiation pattern of quantum dot, Fourier optics system was used to capture the angular property of emission. We believe that highly focused localized surface plasmon around site-selective InGaN quantum dot could be a feasible single photon emitter.