• The KIPS Transactions:PartA
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• v.14A no.4
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• pp.235-244
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• 2007

Caching and prefetching policies have been used in most of computer systems to compensate speed differences between primary memory and secondary storage devices. In this paper, we design and implement a Flash Cache Core Module(FCCM) on the YAFFS which operates on a file system layer for NAND flash memory. The FCCM is independent of the underlying kernel in order to support its stability and compatibility. Also, we implement the Dirty-Last memory replacement technique considering the characteristics of flash memory, and the waiting queue for pages to be prefetched according to page hit. The FCCM reduced the number of I/Os and the amount of prefetched pages by maximum 55%(20% on average) and maximum 55%(24% on average), respectively, comparing with caching and prefetching policies of Linux.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.10
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• pp.46-53
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• 2011

This paper presents an equalizer reducing CCI(cell-to-cell interference) in MLC NAND flash memory. The CCI is a critical factor which affects occurring data errors in a cell, when surrounding cells are programed. We derived a characteristic equation for CCI considering write procedure of data that is similar with signal equalizing. The model considers the floating gate capacitance coupling effect, the direct field effect, and programming methods of the MLC NAND flash memory. We verify the proposed equalizer comparing with the measured data of 1-block MLC NAND flash memory. As the simulation result, the equalizer shows an error correction ratio about 60% under 20nm NAND process.

• The KIPS Transactions:PartA
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• v.12A no.7 s.97
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• pp.571-582
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• 2005

NAND flash memory has advantages of non-volatility, little power consumption and fast access time. However, it suffers from inability that dose not provide to update-in-place and the erase cycle is limited. Moreover, the unit of read and write operations is a page. A NAND flash file system called YAFFS has been proposed. But YAFFS has several problems to be addressed. In this paper, the Reliable Flash File System(RFFS) for NAND flash memory is designed and evaluated. In designing a file system the following four issues must be considered in particular for the design: (i) to minimize a repairing time when the system fault occurs, (ii) to balance the number of block erase operations by offering wear leveling policy, and (iii) to reduce turnaround time of memory operations by reducing the amount of data written. We demonstrate and evaluate the performance of the proposed schemes.

• ETRI Journal
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• v.36 no.5
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• pp.876-879
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• 2014

In current NAND flash design, one of the most challenging issues is reducing peak current consumption (peak ICC), as it leads to peak power drop, which can cause malfunctions in NAND flash memory. This paper presents an efficient approach for reducing the peak ICC of the cache program in NAND flash memory - namely, a program Cache Busy Time (tPCBSY) control method. The proposed tPCBSY control method is based on the interesting observation that the array program current (ICC2) is mainly decided by the bit-line bias condition. In the proposed approach, when peak ICC2 becomes larger than a threshold value, which is determined by a cache loop number, cache data cannot be loaded to the cache buffer (CB). On the other hand, when peak ICC2 is smaller than the threshold level, cache data can be loaded to the CB. As a result, the peak ICC of the cache program is reduced by 32% at the least significant bit page and by 15% at the most significant bit page. In addition, the program throughput reaches 20 MB/s in multiplane cache program operation, without restrictions caused by a drop in peak power due to cache program operations in a solid-state drive.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.768-771
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• 2007

Recently, Nand flash memory is widely used for digital equipments and its capacity and performance are rapidly improving. The limit on the number of writings and readings to/from Nand flash memory does not guarantee the integrity of its data. Therefore, ECC algorithm should be applied to the Nand flash controller. To reduce the access time, we use the look-up table to implement the ECC algorithm instead of the conventional logic gates.

• Journal of Korea Society of Industrial Information Systems
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• v.18 no.2
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• pp.27-34
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• 2013

NAND Flash Memory has been used in several devices by low cost and high capacity, and the demand for mass NAND Flash Memory has increased due to the multimedia extension of mobile devices. The JFFS2, NILFS2, and YAFFS2 file systems are used mainly in NAND Flash Memory. In this paper, the performance of Sequential read/write of the 3 file systems are analyzed for the 4 I/O schedulers : CFQ(Complete Fair Queuing) I/O scheduler, NOOP(No Operation) I/O scheduler, Anticipatory I/O scheduler, and Deadline I/O scheduler. In JFFS2 file system, Anticipatory I/O scheduler has the best performance by 8% decreasing speed in writing time and 1.5% decreasing speed in reading time compared to the other I/O scheduler. In YAFFS2 file system, it results are similar to performance in reading and writing for the 4 I/O schedulers. In NILFS2 file system, NOOP I/O scheduler has 2% faster in writing and Deadline I/O scheduler has 6% faster in reading than other I/O schedulers.

• IEMEK Journal of Embedded Systems and Applications
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• v.12 no.3
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• pp.185-192
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• 2017

Due to the characteristics of low power, high durability and high density, NAND flash memory is being heavily used in various type of devices such as USB, SD card, smart phone and SSD. On the other hand, because of another characteristic of flash cell with the limited number of program/erase cycles, NAND flash memory has a short lifetime compared to other storage devices. To overcome the lifetime problem, many researches related to the wear leveling have been conducted. This paper presents a method called a TCB (Tracking Cold Blocks) using more reinforced constraint conditions when classifying cold blocks than previous works. TCB presented in this paper keeps a MCT (Migrated Cold block Table) to manage the enhanced classification process of cold blocks, with which unnecessary migrations of pages can be reduced much more. Through the experiments, we show that TCB reduces the overhead of wear leveling by about 30% and increases the lifetime up to about 60% compared to BET and BST.

• IEMEK Journal of Embedded Systems and Applications
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• v.12 no.6
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• pp.413-424
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• 2017

In this paper, we show shortcomings of separate chaining scheme by way of experiments with NAND flash memory and improve the performance with merge chaining scheme which is proposed in this paper. We explain this merge chaining scheme and explain how to improve the performance of search operation. Merge chaining scheme shows better performance at insert and search operation compare to separate chaining scheme.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.7-11
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• 2009

In this study, p-channel silicon-oxide-nitride-oxide-silicon(SONOS) transistors are fabricated and characterized as an unit cell for NAND flash memory. The SONOS transistors are fabricated by $0.13{\mu}m$ low power standard logic process technology. The thicknesses of gate insulators are 2.0 nm for the tunnel oxide, 1.4 nm for the nitride layer, and 4.9 nm for the blocking oxide. The fabricated SONOS transistors show low programming voltage and fast erase speed. However, the retention and endurance of the devices show poor characteristics.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.647-648
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• 2008

Traditional FTL and flash file systems based of NAND flash memory may not be adaptively applied to new fusion flash memory which combines the advantages of NAND and NOR flash memory. In this paper, we propose a FTL performance measurement tool using Multi Block Erase function of fusion flash memory. The performance measurement tool shows that multi block erase function can be effectively utilized in performance enhancement of garbage collection for fusion flash memory.