• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.300-304
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• 2008

A novel characterization method was investigated to estimate the trap generation during the program /erase cycles in nand flash memory cell. Utilizing Fowler-Nordheim tunneling current, floating gate potential and oxide electric field, we established a quantitative model which allows the knowledge of threshold voltage (Vth) as a function of either program or erase operation time. Based on our model, the derived results proved that interface trap density (Nit) term is only included in the program operation equation, while both Nit and oxide trap density (Not) term are included in the erase operation equation. The effectiveness of our model was tested using 50 nm nand flash memory cell with floating gate type. Nit and Not were extracted through the analysis of Program/Erase speed with respect to the endurance cycle. Trap generation and cycle numbers showed the power dependency. Finally, with the measurement of the experiment concerning the variation of cell Vth with respect to program/erase cycles, we obtained the novel quantitative model which shows similar results of relationship between experimental values and extracted ones.

• Proceedings of the Korea Information Processing Society Conference
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• 2006.05a
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• pp.1471-1480
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• 2006

• Journal of the Korea Society of Computer and Information
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• v.20 no.5
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• pp.1-12
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• 2015

NAND flash memory has being used for storage systems widely, because it has good features which are low-price, low-power and fast access speed. However, NAND flash memory has an in-place update problem, and therefore it needs FTL(flash translation layer) to run for applications based on hard disk storage. The FTL includes complex functions, such as address mapping, garbage collection, wear leveling and so on. Futhermore, implementation of the FTL on low-power embedded systems is difficult due to its memory requirements and operation overhead. Accordingly, many index data structures for NAND flash memory have being studied for the embedded systems. Overall performances of the index data structures are enhanced by a decreasing of page write counts, whereas it has increased page read counts, as a side effect. Therefore, we propose an index management method using a page mapping log table in $B^+$-Tree based on NAND flash memory to decrease page write counts and not to increase page read counts. The page mapping log table registers page address information of changed index node and then it is exploited when retrieving records. In our experiment, the proposed method reduces the page read counts about 61% at maximum and the page write counts about 31% at maximum, compared to the related studies of index data structures.

• Journal of IKEEE
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• v.26 no.2
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• pp.329-332
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• 2022

In this paper, retention characteristics of lateral charge migration according to parameters of 3D NAND flash memory to which ferroelectric (HfO₂) structure is applied and ∆V_th were analyzed. The larger the P_s, the greater maximum polarization possible in ferroelectric during Programming. Therefore, the initial V_th increases by about 1.04V difference at P_s 70µC/cm² than at P_s 25µC/cm². Also, electrons trapped after the Program operation causes lateral charge migration over time. Since ferroelectric maintains polarization without applying voltage to the gate after Programming, regardless of P_s value, polarization increases as P_r increases and the ∆V_th due to lateral charge migration becomes smaller by about 1.54V difference at P_r 50µC/cm² than P_r 5µC/cm².

• Journal of IKEEE
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• v.27 no.4
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• pp.399-404
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• 2023

In this paper, we analyzed the current path in the O/N/O (Oxide/Nitride/Oxide) structure of 3D NAND Flash memory and in the O/N/F (Oxide/Nitride/Ferroelectric) structure where the blocking oxide is replaced by a ferroelectric. In the O/N/O structure, when V_read is applied, a current path is formed on the backside of the channel due to the E-fields of neighboring cells. In contrast, the O/N/F structure exhibits a current path formed on the front side due to the polarization of the ferroelectric material, causing electrons to move toward the channel front. Additionally, we performed an examination of device characteristics considering channel thickness and channel length. The analysis results showed that the front electron current density in the O/N/F structure increased by 2.8 times compared to the O/N/O structure, and the front electron current density ratio of the O/N/F structure was 17.7% higher. Therefore, the front current path is formed more effectively in the O/N/F structure than in the O/N/O structure.

• Journal of KIISE:Computing Practices and Letters
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• v.13 no.7
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• pp.508-519
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• 2007

Flash memory based storage has been used in various mobile systems and now is to be used in Laptop computers in the name of Solid State Disk. The Flash memory has not only merits in terms of weight, shock resistance, and power consumption but also limitations like erase-before-write property. To overcome these limitations, Flash memory based storage requires special address mapping software called FTL(Flash-memory Translation Layer), which often performs merge operation for block recycling. In order to reduce block recycling cost in NAND Flash memory based storage, we introduce another block recycling scheme which we call migration. As a result, the FTL can select either merge or migration depending on their costs for each block recycling. Experimental results with Postmark benchmark and embedded system workload show that this cost-based selection of migration/merge operation improves the performance of Flash memory based storage. Also, we present a solution of macroscopic optimal migration/merge sequence that minimizes a block recycling cost for each migration/merge combination period. Experimental results show that the performance of Flash memory based storage can be more improved by the macroscopic optimization than the simple cost-based selection.

• Proceedings of the Korean Information Science Society Conference
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• 2012.06a
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• pp.251-252
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• 2012

본 논문은 기존 Legacy NAND의 성능을 향상시키기 위해 제안된 ONFI (Open NAND Flash Interface) NAND의 특성을 지원하는 컨트롤러를 구현하고, 실제 테스트 보드 제작 및 실험 환경을 구축하여 성능을 측정하였다. 그 결과 인터페이스 속도가 기존 Legacy NAND에 비해 약 6배 증가하였다. 또한 읽기 속도의 경우 약 3배의 성능 향상이 있었다.

• IEMEK Journal of Embedded Systems and Applications
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• v.6 no.1
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• pp.32-40
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• 2011

For a NAND booting based embedded system, an application program on the NAND flash memory is downloaded to the RAM when the system is booted. In this case, the application program exists in both the RAM and the NAND flash so the RAM usage is increased. In this paper, we suggested the demand paging technique for the decreasing of the RAM usage for OS-less NAND booting based embedded systems. As a result of a benchmark test, 40~80% of the code memory usage was reduced with below 5% of execution time delay.

• Journal of the Korea Society of Computer and Information
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• v.20 no.12
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• pp.1-8
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• 2015

Wear leveling techniques have been studied to prolong the lifetime of NAND flash memory. Most of studies have used Program/Erase(P/E) cycles as wear index for wear leveling. Unfortunately, P/E cycles could not predict the real lifetime of NAND flash blocks. Therefore, these algorithms have the limited performance from prolonging the lifetime when applied to the SSD. In order to apply the real lifetime, wear leveling algorithms, which use raw Bit Error Rate(rBER) as wear index, have been studied in recent years. In this paper, we propose CrEWL(Cold data identification using raw Bit error rate in Wear Leveling), which uses rBER as wear index to apply to the real lifetime. The proposed wear leveling reduces an overhead of garbage collections by using HBSQ(Hot Block Sequence Queue) which identifies hot data. In order to reduce overhead of wear leveling, CrEWL does not perform wear leveling until rBER of the some blocks reaches a threshold value. We evaluate CrEWL in comparison with the previous studies under the traces having the different Hot/Cold rate, and the experimental results show that our wear leveling technique can reduce the overhead up to 41% and prolong the lifetime up to 72% compared with previous wear leveling techniques.

• Journal of the Institute of Electronics Engineers of Korea CI
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• v.46 no.4
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• pp.21-30
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• 2009

Fusion flash memory such as OneNAND$^{TM}$ is popular as a ubiquitous storage device for embedded systems because it has advantages of NAND and NOR flash memory that it can support large capacity, fast read/write performance and XIP(eXecute-In-Place). Besides, OneNAND$^{TM}$ provides not only advantages of hybrid structure but also multi-block erase function that improves slow erase performance by erasing the multiple blocks simultaneously. But traditional NAND Flash Translation Layer may not fully support it because the garbage collection of traditional FTL only considers a few block as victim block and erases them. In this paper, we propose an Erase Group Flash Translation Layer for improving multi-block erase function. EGFTL uses a superblock scheme for enhancing garbage collection performance and invalid block management to erase multiple blocks simultaneously. Also, it uses clustered hash table to improve the address translation performance of the superblock scheme. The experimental results show that the garbage collection performance of EGFTL is 30% higher than those of traditional FTLs, and the address translation performance of EGFTL is 5% higher than that of Superblock scheme.