• Journal of KIISE:Computing Practices and Letters
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• v.14 no.1
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• pp.91-95
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• 2008

Flash memory is widely used in embedded systems because of its benefits such as non-volatile, shock resistant, and low power consumption. But NAND flash memory suffers from out-place-update, limited erase cycles, and page based read/write operations. To solve these problems, log-structured filesystem was proposed such as YAFFS. However, YAFFS sequentially retrieves an array of all block information to allocate free block for a write operation. Also before the write operation, YAFPS read the array of block information to find invalid block for erase. These could reduce the performance of the filesystem. This paper suggests fast operation method for NAND flash filesystem that solves the above-mentioned problems. We implemented the proposed methods in YAFFS. And we measured the performance compared with the original technique.

• Journal of Internet Computing and Services
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• v.7 no.6
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• pp.105-112
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• 2006

This paper be composed to file system by making a new i_node structure which can decrease Write frequency because this's can improved the file system efficiency if reduced Write operation frequency of flash memory in respect of file system, i-node is designed to realize Cleaning policy of data in order to perform Write operation. This paper suggest Cleaning Algorithm for Write operation through a new i_node structure. In addition, this paper have mode the oldest data cleaned and the most recent data maintained longest as a result of experiment that the recent applied program and data tend to be implemented again through the concept of regional and time space which appears automatically when applied program is implemented. Through experiment and realization of the Flash file system, this paper proved the efficiency of NAND-type flash file system which is required in on Embedded system.

• Journal of IKEEE
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• v.26 no.2
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• pp.329-332
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• 2022

In this paper, retention characteristics of lateral charge migration according to parameters of 3D NAND flash memory to which ferroelectric (HfO₂) structure is applied and ∆V_th were analyzed. The larger the P_s, the greater maximum polarization possible in ferroelectric during Programming. Therefore, the initial V_th increases by about 1.04V difference at P_s 70µC/cm² than at P_s 25µC/cm². Also, electrons trapped after the Program operation causes lateral charge migration over time. Since ferroelectric maintains polarization without applying voltage to the gate after Programming, regardless of P_s value, polarization increases as P_r increases and the ∆V_th due to lateral charge migration becomes smaller by about 1.54V difference at P_r 50µC/cm² than P_r 5µC/cm².

• Journal of the Korea Society of Computer and Information
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• v.28 no.8
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• pp.1-10
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• 2023

Recently, NAND flash memories have replaced magnetic disks due to non-volatility, high capacity and high resistance, in various computer systems but it has disadvantages which are the limited lifespan and imbalanced operation latency. Therefore, many page replacement policies have been studied to overcome the disadvantages of NAND flash memories. Although it is clear that these policies reflect execution characteristics of various environments and applications, researches on the foundation-policy decision for disk buffer management are insufficient. Thus, in this paper, we propose a foundation-policy recommendation model, called FRM for effectively utilizing NAND flash memories. FRM proposes a suitable page replacement policy by classifying and analyzing characteristics of workloads through machine learning. As an implementation case, we introduce FRM with a disk buffer management policy and in experiment results, prediction accuracy and weighted average of FRM shows 92.85% and 88.97%, by training dataset and validation dataset for foundation disk buffer management policy, respectively.

• Journal of IKEEE
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• v.27 no.4
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• pp.399-404
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• 2023

In this paper, we analyzed the current path in the O/N/O (Oxide/Nitride/Oxide) structure of 3D NAND Flash memory and in the O/N/F (Oxide/Nitride/Ferroelectric) structure where the blocking oxide is replaced by a ferroelectric. In the O/N/O structure, when V_read is applied, a current path is formed on the backside of the channel due to the E-fields of neighboring cells. In contrast, the O/N/F structure exhibits a current path formed on the front side due to the polarization of the ferroelectric material, causing electrons to move toward the channel front. Additionally, we performed an examination of device characteristics considering channel thickness and channel length. The analysis results showed that the front electron current density in the O/N/F structure increased by 2.8 times compared to the O/N/O structure, and the front electron current density ratio of the O/N/F structure was 17.7% higher. Therefore, the front current path is formed more effectively in the O/N/F structure than in the O/N/O structure.

• Journal of the Institute of Electronics Engineers of Korea CI
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• v.45 no.3
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• pp.47-57
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• 2008

Recently, energy-efficient NAND Flash memory of large volume is favored as next-generation storage for sensor nodes. So far, most sensor node file systems are based on NOR flash and few file systems are applicable to large NAND flash memory. Although it is required to develop new file systems taking account of the features of NAND flash memory, it is difficult to develop them mainly due to the limit of SRAM memory on sensor nodes. Sensor nodes support SRAM of $4{\sim}10$ KBytes only. In this paper, we designed and implemented a novel file system to support data-centric applications. To do this, we added EEPROM of 1 KBytes to store persistent file description data efficiently and devised a simple wear-leveling method. This reduces the number of page updates, resulting in reduction in energy use and increase in lifetime of sensor nodes.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.7
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• pp.48-56
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• 2011

Recently, new storage device SSD(Solid State Disk) based on NAND flash memory is gradually replacing HDD(Hard Disk Drive) in mobile device and thus a variety of research efforts are going on to find the cost-effective ways of performance improvement. By increasing the NAND flash channels in order to enhance the bandwidth through parallel processing, DRAM buffer which acts as a buffer cache between host(PC) and NAND flash has become the bottleneck point. To resolve this problem, this paper proposes an efficient low-cost scheme to increase SSD performance by improving DRAM buffer bandwidth through scheduling techniques which utilize DRAM multi-banks. When both host and NAND flash multi-channels request access to DRAM buffer concurrently, the proposed technique checks their destination and then schedules appropriately considering properties of DRAMs. It can reduce overheads of bank active time and row latency significantly and thus optimizes DRAM buffer bandwidth utilization. The result reveals that the proposed technique improves the SSD performance by 47.4% in read and 47.7% in write operation respectively compared to conventional methods with negligible changes and increases in the hardware.

• Journal of the Korea Society of Computer and Information
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• v.20 no.5
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• pp.1-12
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• 2015

NAND flash memory has being used for storage systems widely, because it has good features which are low-price, low-power and fast access speed. However, NAND flash memory has an in-place update problem, and therefore it needs FTL(flash translation layer) to run for applications based on hard disk storage. The FTL includes complex functions, such as address mapping, garbage collection, wear leveling and so on. Futhermore, implementation of the FTL on low-power embedded systems is difficult due to its memory requirements and operation overhead. Accordingly, many index data structures for NAND flash memory have being studied for the embedded systems. Overall performances of the index data structures are enhanced by a decreasing of page write counts, whereas it has increased page read counts, as a side effect. Therefore, we propose an index management method using a page mapping log table in $B^+$-Tree based on NAND flash memory to decrease page write counts and not to increase page read counts. The page mapping log table registers page address information of changed index node and then it is exploited when retrieving records. In our experiment, the proposed method reduces the page read counts about 61% at maximum and the page write counts about 31% at maximum, compared to the related studies of index data structures.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.8
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• pp.45-52
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• 2011

Flash memory is becoming widely prevalent in various area due to high performance, non-volatile features, low power, and robust durability. As price-per-bit is decreased, NAND flash based SSDs (Solid State Disk) have been attracting attention as the next generation storage device, which can replace HDDs (Hard Disk Drive) which have mechanical properties. Especially for the single package SSD, if channel number or FIFO buffer size per channel increases to improve performance, the size of a controller and I/O pin count will increase linearly with channel numbers and form factor will be affected. We propose a novel technique which can minimize form factor by optimizing the number of NAND flash channels and the size of interface FIFO buffer in the SSD. For SSD with 10 channel and double buffer, the experimental results show that buffer block size can be reduced about 73% without performance degradation and total size of a controller can be reduced about 40% because control block per channel and I/O pin count decrease according to decrease channel number.

• IEMEK Journal of Embedded Systems and Applications
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• v.10 no.3
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• pp.171-178
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• 2015

Recently NAND flash memory has been found to be the primary cause of low performance in the smart device. NAND flash memory is different from each other the execution time of I/O operations that flash file system is required. Therefore, it is necessary to compare and analyze the flash file system I/O performance for the efficient I/O on smart device. In this paper, it was tested and analyzing the I/O performance of the YAFFS2, JFFS2, UBIFS. Experimental results most read I/O performance is good, but the writing I/O performance is not good. For UBIFS, showed a more good I/O performance compared to other flash file system.