• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.04a
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• pp.12-12
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• 2006

• Bulletin of the Korean Chemical Society
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• v.20 no.4
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• pp.466-468
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• 1999

• Bulletin of the Korean Chemical Society
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• v.11 no.4
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• pp.358-360
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• 1990

• Korean Journal of Soil Science and Fertilizer
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• v.9 no.1
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• pp.17-23
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• 1976

In order to investigate the fate of nitrogen in the paddy soil, Suchang, Hwasoon and Susan soil which have different properties, were treated with several nitrogen fertilizers such as ammonium chloride, ammonium sulfate, urea and SCU (sulfur-coated urea), and incubated under water-logged condition in $30^{\circ}C$ incubator. $NH_4-N$, $NO_3-N$, $Fe^{++}$ and pH in soil and stagnant water, were determined at 10, 20, 30, 40 and 50 days after incubation. The obtained results were summarized as follows: 1. The effect of rising temperature was increased in order of Hwasoon>Suchang>Susan and the effect of air drying soil was risen in order of Susan>Hwasoon>Suchang, while the rate of ammonication was in order of Susan>Suchang>Hwasoon. 2. The changes of $NH_4-N$ in stagnant water was dependent upon the nitrogen concentration of $NH_4Cl$ and $(NH_4)SO_4$ plat was high and decreased after 30 days incubation, but increased after 40 days and then decreased again. In contrast with the above, $NH_4-N$ concentration of urea and SCU plot was low but the change showed slightly through the incubation period. 3. Accumulation of $NH_4-N$ in the oxidative layer of the $NH_4Cl$ and $(NH_4)_2SO_4$ plot was higher than that of urea and SCU plot and $NH_4-N$ content was decreased with the incubation period. The change of $NH_4-N$ in the reductive layer showed the same pattern. 4. The changes of $NO_3-N$ in the stagnant water were different according to soil properties and nitrogen fertilizer. $NO_3-N$ concentration in stagnant water of urea and SCU plot was higher than in the $NH_4-Cl$ $(NH_4)_2SO_4$ plot and nearly disappeared after 30 to 40 days incubation. 5. The $NO_3-N$ concentration in the oxidative layer of soil was higher than reductive layer. The pattern of change was different in accordance with soil properties and nitrogen fertilizers. In general, nitrification in urea and SCU plot was more increased than $(NH_4)_2SO_4$ plot. In reductive layer, the concentration of $NO_3-N$ was very low until 30 days incubation and thereafter increased slightly. 6. Upon the concentration of $NH_4-N$ and $NO_3-N$ in stagnant water and soil, it was assumed that denitification of urea and SCU plot was higher than $NH_4Cl$ and $(NH_4)_2SO_4$ plot and denitrified nitrogen in incubation period was above 50%.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.472-472
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• 2013

본 논문은 InN와 GaN를 교대로 증착하는 교번성장법을 이용해 제작한 4주기 InN/GaN 박막의 구조적, 광학적, 특성을 X-ray diffraction, Atomic force microscopy, Transmission electron microscopy과 저온 Photoluminescence (PL) 장비를 사용하여 분석한 결과를 보고한다. Fig. 1은 4주기 InN/GaN박막의 XRD 스펙트럼으로 GaN(0002)와 InN(0002)의 회절 신호를 관찰할 수 있다. 그러나 두 피크뿐만 아니라 InN와 GaN 사이에 구분이 되지 않은 추가 신호를 확인할 수 있다. 추가신호는 InN와 GaN 계면에서 발생하는 상호확산 확률로서 해석할 수 있다. Fig. 2는 다양한 조건에서 성장한 InN/GaN 시료의 PL스펙트럼으로 방출 파장은 각각 1,380, 1,290, 1,280, 1,271, 1,246 nm로 측정되었다. 성장 조건 변화에 따른 발광특성 변화를 박막에서 III족 원자 특히, In 원자의 성장 거동에 따른 구속준위(Localized states) 변화로 논의할 예정이다.

• Journal of the Korean Ceramic Society
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• v.36 no.10
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• pp.1007-1015
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• 1999

The Si3N4 composites reinforced with carbon-coated SiC whiskers were fabricated by hot-pressing at 180$0^{\circ}C$ for 2 hours to examine the effects of carbon-coated whiskers on the mechanical properties of SiC whisker reinforced Si3N4 composites. The flexural strength of the Si3N4 composites and Si3N4 monolith respectively. The weak interfacial bond between carbon-coated SiC whiskers and Si3N4 matrix which enhances the crack deflection and whisker pull-out could contribute to the improvement of mechanical properties of the composites.

• Journal of Powder Materials
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• v.10 no.1
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• pp.57-62
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• 2003

The effect of bedding on the microstructure of $Si_3N_4$ added with ultra-fine SiC was investigated. The bedding and the addition of ultra-fine SiC effectively inhibited grain growth of $Si_3N_4$ matrix grain. The microstructures of the specimens sintered with bedding powder consisted of fine-grains as compared with the specimens sintered without bedding powder. In addition, the grain size and the difference of grain size between the specimens sintered with bedding and without bedding was reduced with increasing SiC content. Some ultra-fine SiC particles were trapped in the $Si_3N_4$ grains growed. The number of SiC particles trapped in the $Si_3N_4$ grains increased with increasing the grain growth. When ultra-fine SiC particles were added in the $Si_3N_4$ ceramics, the strength was improved but the toughness was decreased, which was considered to be resulted from the decrease of the grain size.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.124-125
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• 2008

The charge trapping and tunnelling characteristics with various thickness of $Si_3N_4$ layer were investigated for application of TBE (Tunnel Barrier Engineered) non-volatile memory. We confirmed that the critical thickness of no charge trapping was existed with decreasing $Si_3N_4$ thickness. Also, the charge trap centroid x and charge trap density were extracted by using CCS (Constant Current Stress) method. Through the optimized thickness of $Si_3N_4$ layer, it can be improve the performance of non-volatile memory.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2001.04a
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• pp.321-326
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• 2001

In the present study, $Si_3N_4-SiC$ ceramic composites that contained up to 20 wt% of dispersed SiC particles were fabricated via hot-pressing with an oxynitride glass. The microstructure, the mechanical properties, and the cutting performance of resulting ceramic composites were investigated. By fixing the composition as $Si_3N_4-20$ wt% SiC, the effect of sintering time on the microstructure, the mechanical properties, and the cutting performance were also investigated. For machining of gray cast i개n, the tool life increases with increasing the amount of SiC content in the composites; The tool life also increased with increasing the sintering time. The tool life of the home-made cutting tools was very close to that of commercial $Si_3N_4$ cutting tool. The superior cutting performance of $Si_3N_4-SiC$ ceramic cutting tools suggests the possibility to be a new ceramic tool material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.412-415
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• 2003

[ $Si_3N_4$ ] thin film is the good material to fabricate the capacitors at MMIC processes. Normally, $Si_3N_4$ thin films is used to dielectric in the MIM capacitor and film thickness is $2000\;{\AA}$. Insulator(or dielectric) was deposited by PECVD at our MIM structure with air bridge which connect between top metal and contact pad. We optimized PECVD process to fabricate the good capacitors which can be applied at the true MMIC. The thickness of our $Si_3N_4$ thin films was $1000\;{\AA}$ shallower than $2000\;{\AA}$, and their breakdown voltages were above 70V.