• Title/Summary/Keyword: N_2gas

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A Study on Electric Characteristics of Plasma Electon Beam Produced by Cold Cathode. (냉음극을 이용한 plasma전자 beam의 전기적 입력특성 I)

  • 전춘생;박용관
    • 전기의세계
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    • v.27 no.3
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    • pp.36-42
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    • 1978
  • It has been investigates that electric characteristics of plasma electron beam in N$_{2}$, H$_{2}$ and Ar gas jars under various gas pressures during electron beams are formed. The results are as follows: 1)Electron beam is formed in the region of positive resistance on the characteristic curve. This phenomenon is identical in N$_{2}$, H$_{2}$ and Ar gases. 2)But in Ar gas, electron beam is formed at relatively lower gas pressure than in H$_{2}$ and N$_{2}$. 3)In pure gas either N$_{2}$, H$_{2}$ and N$_{2}$ the lower the gas pressure, the higher the voltage drop for the same electron beam current. 4)The region in which electron beam is formed is limited at a given pressure. 5)Beyond the limit mentioned above, it becomes glow discharge state and the current increases radically. 6)At a given gas pressure, electron beam voltage, that is, electrical power input increases with gap length.

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Surface Flashover Characteristics on Poor Contact in N2/O2 Mixture Gas under Non-Uniform Field (불평등 전계 중 불량 접촉갭에 관한 N2/O2 혼합가스의 연면플래쉬오버특성)

  • Lim, Dong-Young;Choi, Eun-Hyeok;Choi, Sang-Tae;Choi, Byoung-Ju;Lee, Kwang-Sik;Bae, Sungwoo
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.29 no.8
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    • pp.63-69
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    • 2015
  • This paper presents the surface flashover characteristics to simulate the poor contact between an anode and a solid dielectric in a $N_2/O_2$ mixture gas (8/2) under a non-uniform field. The surface flashover voltage of the $N_2/O_2$ mixture gas revealed the irregular tendency that was not in accordance with the Paschen's law with an increasing gap of the poor contact. In addition, the insulation performance of the $N_2/O_2$ mixture gas at 0.6MPa was comparable to that of $SF_6$ gas of 0.1MPa based on the insulation performance on the poor contact. These results are able to apply the insulation design of eco-friendly gas insulation switchgear considering the internal faults.

Effect of $H_{2}/N_{2}$ Sintering Atmosphere on the Carbon Content and Mechanical Properties in the Metal Injection Molding of Fe-Ni Mixed Powder ($H_{2}/N_{2}$ 혼합가스 혼합가스 소결분위기 변화가 사출성형한 Fe-Ni 혼합분말의 탄소량과 기계적 성질에 미치는 영향)

  • 구광덕
    • Journal of Powder Materials
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    • v.3 no.1
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    • pp.49-56
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    • 1996
  • The effect of$H_{2}/N_{2}$gas sintering atmosphere on the carbon content and mechanical properties during the metal injection molding process of carbonyl iron-nickel powder was studied. The carbon content of the specimen after debinding in the pure$N_{2}$atmosphere appeared 0.78 wt%. After showing the maximum value of 1.48 wt.% in the debinding atmosphere of 10%$H_{2}/N_{2}$gas mixture, the carbon content of the debinded specimen decreased gradually with increasing the$H_2$content in the$H_{2}/N_{2}$gas mixture. The carbon contents of the sintered specimen were 0.46~0.63wt% in Na gas atmosphere, while they appeared extremely low above 40%$H_{2}/N_{2}$gas atmosphere. The relative sintered density increased abruptly from 88~90% to 93~96% with the addition of Ni, while the density nearly unchanged above 2% Ni addition. The sintered density increased with increasing the fraction of$H_{2} in H_{2}/N_{2}$gas mixture. Tensile strength and hardness increased, and elongation decreased with increasing carbon and Ni content. In spite of high carbon content of 0.63 wt%, the superior elongation value of 10% was shown.

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UV emission characteristics of Ne+$N_2$ gas-mixture discharges in AC Plasma Display Panel

  • Baek, Byung-Jong;Hong, Sang-Min;Choi, Kyung-Cheol
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.586-589
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    • 2002
  • The Ultra Violet(UV) emission characteristics of Neon + Nitrogen gas-mixture discharge was investigated in AC plasma display panel. The firing voltage of Ne+$N_2$ gas-mixture discharge increased with increasing nitrogen concentration. The UV intensity emitted from the gas discharge also increased with increasing nitrogen concentration. The UV efficiency increase with increasing $N_2$ partial pressure at low $N_2$ concentration, and then UV efficiency is saturated at high $N_2$ concentration.

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The Analysis of $SF_6/N_2$ Plasma Properties Under the Atmosphere Pressure ($SF_6/N_2$ 혼합기체의 대기압 플라즈마 특성 분석)

  • So, Soon-Youl;Lee, Jin
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.58 no.4
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    • pp.516-520
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    • 2009
  • Atmosphere Plasmas of Gas Discharge (APGD) have been used in plasma sources for material processing such as etching, deposition, surface modification, etc. This study is to investigate and understand the fundamental plasma discharge properties. Especially, $SF_6/N_2$ mixed gas would be used in power transformer, GIS (Gas insulated switchgear) and so on. In this paper, we developed a one dimensional fluid simulation model with capacitively coupled plasma chamber at the atmosphere pressure (760 [Torr]). 38 kinds of $SF_6/N_2$ plasma particles which are an electron, two positive ions (${SF_5}^+$, ${N_2}^+$), five negative ions (${SF_6}^-$, ${SF_5}^-$, ${SF_4}^-$, ${F_2}^-$, ${F_1}^-$), thirty excitation and vibrational particles for $N_2$ were considered in this computation. The $N_2$ gases of 20%, 50%, 80% were mixed in $SF_6$ gas. As the amount of $N_2$ gas was increased, the properties of electro-negative plasma moved toward the electro-positive plasma.

$N_2$ Gas roles on Pt thin film etching using Ar/$C1_2/N_2$ Plasma (Ar/$C1_2/N_2$플라즈마를 이용한 Pt 박막 식각에서 $N_2$ Gas의 역할)

  • 류재홍;김남훈;이원재;유병곤;장의구
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.468-470
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    • 1999
  • One of the most critical problem in etching of platinum was generally known that the etch slope was gradual. therefore, the addition of $N_2$ gas into the Ar/C1$_2$ gas mixture, which has been proposed the optimized etching gas combination for etching of platinum in our previous article, was performed. The selectivity of platinum film to oxide film as an etch mask increased with the addition of N2 gas, and the steeper etch slope over 75 $^{\circ}$ could be obtained. These phenomena were interpreted the results the results of a blocking layer such as Si-N or Si-O-N on the oxide mask. Compostional analysis was carried out by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). Moreover, it could be obtained the higher etch rate of Pt film and steeper profile without residues such as p.-Cl and Pt-Pt ant the addition N\ulcorner of 20 % gas in Ar(90)/Cl$_2$(10) Plasma. The Plasma characteristic was extracted from optical emissionspectroscopy (OES).

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A Study on the Flashover along the Spacer Surface SF6-N2 Gas Mixtures Stressed by D.C (SF6및 SF6-N2 가스 중에서 직류전동에 \ulcorner나 스페이서 연면간락에 관한 연구)

  • 김정달;정재길;이동인
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.36 no.11
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    • pp.796-805
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    • 1987
  • The flashover voltages have been investigated for spacer and unbridged-gap in SF6-N2 gas mixtures up to the value of 760(torr. cm), The gap was stressed by DC source The results obtained are as follows` 1) The flashover voltages for an unbridged gap and for a spacer in SF6, N2 and SF6-N2 gas mixtures follow the Paschen's curve. 2) The polarity effects was not observed in both unbridged gap and a spacer which had per ect contact with an electrode. The flashover voltages for negative polatity are lower than those for positive polarity in case of imperfect contact. 3) 3%flashover voltage is decreased by putting a spacer which had perfect contact with an electrode. The spacer which has a gap void shows the lowest flashover voltage. 4) The lowest spacer efficiency was obtained with higher gas pressure & large amount of N2 content. The flashover voltages depend on the gas pressure rather than the spacer efficienty at low value of pd. 5) The flashover voltages of gas mixtures of N2 with SF6 are relatively high, even though the amount of SF6 gas content is small.

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The Effect Of Additive $N_2$ Gas In Pt Film Etching Using Inductively Coupled $Cl_2/Ar$ Plasmas ($Cl_2/Ar$ 유도 결합 플라즈마에서 Pt 박막 식각시 $N_2$ 가스 첨가 효과)

  • Ryu, Jae-Heung;Kim, Nam-Hoon;Chang, Eui-Goo;Kim, Chang-Il
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.7
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    • pp.1-6
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    • 2000
  • In this study, the effects of the addition of $N_2$ gas into the $Cl_2$ (90)/Ar(10) gas mixture, which has been proposed as the optimized etching gas combination, for etching of platinum was performed. The selectivity of platinum film to $SiO_2$ film etch mask increased with the addition of $N_2$ gas, and etch profile over 75 $^{\circ}$ could be obtained when 20 % additive $N_2$ gas was added. These phenomena were interpreted as the results of a formation of blocking layer such as Si-N or Si-O-N on the $SiO_2$ mask. The maximum etch rate of Pt film and selectivity of Pt to $SiO_2$ are 1425 ${\AA}$/min and 1.71, respectively. These improvements were considered to be due to the formation of more volatile compounds such as Pt-N or Pt-N-Cl.

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A Study on the Phase Transformations of (TiAl)N Films Deposited by TFT Sputtering System (TFT(Two-Facing-Targets) 스퍼터장치에 의해 증착된 (TiAl)N 박막의 상변태에 관한 연구)

  • Han, Chang-Suk
    • Journal of the Korean Society for Heat Treatment
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    • v.18 no.5
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    • pp.281-287
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    • 2005
  • Titanium aluminium nitride((TiAl)N) film is anticipated as an advanced coating film with wear resistance used for drills, bites etc. and with corrosion resistance at a high temperature. In this study, (TiAl)N thin films were deposited both at room temperature and at elevated substrate temperatures of 573 to 773 K by using a two-facing-targets type DC sputtering system in a mixture Ar and $N_2$ gases. Atomic compositions of the binary Ti-Al alloy target is Al-rich (25Ti-75Al (atm%)). Process parameters such as precursor volume %, substrate temperature and Ar/$N_2$ gas ratio were optimized. The crystallization processes and phase transformations of (TiAl)N thin films were investigated by X-ray diffraction, field-emission scanning electron microscopy. The microhardness of (TiAl)N thin films were measured by a dynamic hardness tester. The films obtained with Ar/$N_2$ gas ratio of 1:3 and at 673 K substrate temperature showed the highest microhardness of $H_v$ 810. The crystallized and phase transformations of (TiAl)N thin films were $Ti_2AlN+AlN{\rightarrow}TiN+AlN$ for Ar/$N_2$ gas ratio of 1:3, $Ti_2AlN+AlN{\rightarrow}TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 1:1 and $TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN{\rightarrow}Ti_2AlN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 3:1. The above results are discussed in terms of crystallized phases and microhardness.

Effect of Anaerobic Treatments on the ${\gamma}-Aminobutyric$ acid and Quality of Green Tea(Camellia sinensis var. sinensis) (차잎 혐기처리가 녹차의 기능성분 및 품질에 미치는 영향)

  • Park, Jang-Hyun
    • Korean Journal of Medicinal Crop Science
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    • v.9 no.1
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    • pp.26-32
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    • 2001
  • The contents of chemical components such as total nitrogen, total amino acid and vitamin C were somewhat higher in $N_2$ gas treatment at $10^{\circ}C$ for 3 hours than those of other treatments. However, the contents of tannin and chlorophyll were slightly lower than that in the other treatments. The content of ${\gamma}-Aminobutyric$ acid with $N_2$ gas treatment was higher $1.5{\sim}6$ times with values of $51{\sim}205mg/100g$ than in control (35mg/100g). The scores of sensory test was not different between $N_2$ gas treatment for 3 hours and control. The contents of chemical components such as total nitrogen, total amino acid including theanine and caffeine were slightly higher in $N_2$ gas treatment at $20^{\circ}C$ for 3 hours than those of other treatments. However, the contents of tannin and vitamin C were slightly lower than those of other treatment. The content of GABA in tea leaves treated with $N_2$ gas was higher $2.5{\sim}7$ times with values of $85{\sim}225mg/100g$ than in control (35mg/100g). The sensory test was lower in $N_2$ gas treatment($76.3{\sim}78.1$ point) than in control(80.4 point). The contents of chemical components were not different between $N_2$ gas treatment at $30^{\circ}C$ for 3 hours and control. Whereas the contents of chemical components were somewhat lower in $N_2$ gas treatment for 1 hour and 5 hours than in control. The content of GABA in tea leaves treated with $N_2$ gas was higher $3{\sim}7$ times with values of $115{\sim}217mg/100g $than in control(35mg/100g). The sensory test was lower in $N_2$ gas treatment ($74.3{\sim}78.4$ point) than in control(80.4 point). Consequently, tea mading within 5 time $N_2$ gas treatment at $10^{\circ}C$ or 3 time $N_2$ gas treatment at 20, $30^{\circ}C$ after plucking was considered to be the best green tea in terms of functional nature as well as taste nature.

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