• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.266.2-266.2
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• 2013

According to advanced nanotechnology, the nanostructured materials with various kinds and shape are synthesized easily or produced by process. Recently, researches about interaction between the nanostructured materials and biological system have been progressed actively. The surface topography may influence cellular responses, for example cell adhesion, cell morphology. In this work, we synthesized vertically aligned silicon nanowires (SiNWs) on the Au-covered Si(111) wafer by chemical vapor deposition (CVD) method. We accomplished to control of the SiNWs diameter by regulating thickness of Au film such as 1 nm and 10 nm. These substrates did not isolate cells and just provided surface topography for cell culture. Human Embryonic Kidney 293T cells (HEK 293T cells) were cultured on these substrates for 2 days. We studied the nanotopographical effects on cell morphology, adhesion, and growth which are evaluated on each SiNWs substrate comparing bare glass as control.

• Vacuum Magazine
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• v.3 no.3
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• pp.10-14
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• 2016

Semiconductor nanowires (NWs) refer to one-dimensional semiconductor materials that have a diameter constrained to tens of nanometers or less and an unconstrained length. Over the past few decades, most efforts in the semiconductor NWs have been focused on synthesis, structure and morphology control, and assembly, as appropriate for diverse functional device applications. This paper provides a detailed overview of the recent research activities and major achievements in nanowire research, which especially includes nanowires synthesis, position and direction-controlled assembly or growth. In addition, the fine tuning of structure and morphology, and the related properties and device applications of the NWs are highlighted.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.28 no.4B
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• pp.383-392
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• 2008

It is not always easy to estimate the parameters in hydrologic models due to insufficient hydrologic data when hydraulic structures are designed or water resources plan are established. Therefore, uncertainty analysis are inevitably needed to examine reliability for the estimated results. With regard to this point, this study applies a Bayesian Markov Chain Monte Carlo scheme to the NWS-PC rainfall-runoff model that has been widely used, and a case study is performed in Soyang Dam watershed in Korea. The NWS-PC model is calibrated against observed daily runoff, and thirteen parameters in the model are optimized as well as posterior distributions associated with each parameter are derived. The Bayesian Markov Chain Monte Carlo shows a improved result in terms of statistical performance measures and graphical examination. The patterns of runoff can be influenced by various factors and the Bayesian approaches are capable of translating the uncertainties into parameter uncertainties. One could provide against an unexpected runoff event by utilizing information driven by Bayesian methods. Therefore, the rainfall-runoff analysis coupled with the uncertainty analysis can give us an insight in evaluating flood risk and dam size in a reasonable way.

• Applied Science and Convergence Technology
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• v.27 no.1
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• pp.5-8
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• 2018

In this paper, plasma treatment effects on a ploy(dimethyl siloxane) substrate were analyzed for the applications of stretchable silver nanowire (Ag NWs) electrodes. The oxygen plasma treated sample shows the best performance compared to nitrogen treated and untreated samples. The lowest sheet resistance and reasonable stretching capability was achieved up to 20% strain condition without open circuit fail for the oxygen plasma treated sample.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.215-216
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• 2013

The silicide is a compound of Si with an electropositive component. Silicides are commonly used in silicon-based microelectronics to reduce resistivity of gate and local interconnect metallization. The popular silicide candidates, CoSi2 and TiSi2, have some limitations. TiSi2 showed line width dependent sheet resistance and has difficulty in transformation of the C49 phase to the low resistive C54. CoSi2 consumes more Si than TiSi2. Nickel silicide is a promising material to substitute for those silicide materials providing several advantages; low resistivity, lower Si consumption and lower formation temperature. Nickel silicide (NiSi) nanowire (NW) has features of a geometrically tiny size in terms of diameter and significantly long directional length, with an excellent electrical conductivity. According to these advantages, NiSi NWs have been applied to various nanoscale applications, such as interconnects [1,2], field emitters [3], and functional microscopy tips [4]. Beside its tiny geometric feature, NW can provide a large surface area at a fixed volume. This makes the material viable for photovoltaic architecture, allowing it to be used to enhance the light-active region [5]. Additionally, a recent report has suggested that an effective antireflection coating-layer can be made with by NiSi NW arrays [6]. A unique growth mechanism of nickel silicide (NiSi) nanowires (NWs) was thermodynamically investigated. The reaction between Ni and Si primarily determines NiSi phases according to the deposition condition. Optimum growth conditions were found at $375^{\circ}C$ leading long and high-density NiSi NWs. The ignition of NiSi NWs is determined by the grain size due to the nucleation limited silicide reaction. A successive Ni diffusion through a silicide layer was traced from a NW grown sample. Otherwise Ni-rich or Si-rich phase induces a film type growth. This work demonstrates specific existence of NiSi NW growth [7].

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.6
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• pp.245-250
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• 2019

We investigated the post-annealing effect of Sn-incorporated β-Ga₂O₃ (β-Ga₂O₃ : Sn) nanowires (NWs) grown on sapphire (0001) substrates using radio-frequency powder sputtering. The β-Ga₂O₃ : Sn NWs were converted to a porous structure during the vacuum annealing process at 800℃. Host non-stoichiometric Ga₂O_3-x, is transformed into stoichiometric Ga₂O₃, where Sn atoms separate and form Sn nano-clusters that gradually evaporate in a vacuum atmosphere. As a result, the amount of Sn atoms was reduced from 1.31 to 0.27 at%. Pores formed on the sides of β-Ga₂O₃ : Sn NWs were observed. This increases the ratio of the surface to the volume of β-Ga₂O₃ : Sn NWs.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.325-325
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• 2012

1차원구속 반도체인 nanowires (NWs)는 전기적, 광학적으로 일반 bulk구조와 다른 특성을 가지고 있어서 현재 많은 연구가 되고 있다. 일반적으로 NWs는 Au 등의 금속 촉매를 이용하여 성장을 하게 되는데 이때 촉매가 오염물로 작용을 해서 결함을 만들어서 bandgap내에 defect level을 형성하게 된다. 본 연구는 Si (111) 기판 위에 GaAs NWs 와 InAs NWs를 촉매를 이용하지 않고 성장 하였다. vapour-liquid-solid (VLS)방법으로 성장하는 GaAs NWs는 Ga의 droplet을 이용하게 되는데 Ga이 Si 기판위에 자연 산화막에 존재하는 핀홀(pinhole)로 이동하여 1차적으로 Ga droplet 형성하고 이후 공급되는 Ga과 As은 SiO2 보다 GaAs와 sticking coefficient 가 좋기 때문에 Ga drolept을 중심으로 빠른 선택적 성장을 하게 되면서 NWs로 성장을 하게 된다. 반면에 InAs NWs를 성장 할 시에 droplet 방법으로 성장을 하게 되면 NWs가 아닌 박막 형태로 성장을 하게 되는데 이것으로 InAs과 GaAs의 $SiO_2$와의 sticking coefficient 의 차이를 추측을 할 수 있다. InAs NWs는 GaAs NWs는 달리 native oxide를 이용하지 않고 InAs 과 Si 사이의 11.5%의 큰 lattice mismatch를 이용한다. 이종의 epitaxy 방법에는 크게 3종류 (Frank-van der Merwe mode, Stranski-Krastanov mode, Volmer-Weber mode)가 있는데 각기 다른 adatom 과 surface의 adhesive force로 나누어지게 된다. 이 중 Volmer-Weber mode epitaxy는 adatom 의 cohesive force가 surface와의 adhesive force보다 큰 경우 성장 되는 방식으로 InAs NWs 는 이 방식을 이용한다. 즉 droplet을 이용하지 않는 vapour-solid (VS) 방법으로 성장을 하였다. 이 때 In 의 migration을 억제하기 위해서 VLS mode 의 GaAs NWs 보다 As의 공급을 10배 이상 하였다. FE-SEM 분석 결과 GaAs NWs는 Ga droplet을 확인 할 수 있었고 InAs NWs는 droplet이 존재하지 않았다. GaAs와 InAs NW는 density와 length가 V/III가 높을수록 증가 하였다.

• Korean Journal of Applied Biomechanics
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• v.16 no.2
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• pp.193-205
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• 2006

This study was to analysis the kinematic and kinetic differences between new walking shoe(NWS : RYN) and general walking shoe(GWS). The subjects for this study were 10 male adults who had the walking pattern of rearfoot shrike with normal foot. The movement of one lower leg was measured using plantar pressure and Vicon Motion Analysis Program(6 MX13 and 2 MX40 cameras : 100 f / s) while the subjects walked at the velocity(1.5m/s. on 2m).. The results of this study was as follows : 1. The NWS was better than the GWS that caused injuries such as adduction, abduction and pronation are reduced While walking on a perpendicular surface, the landing angle and the knees angles were extensive which makes walking more safe which reduces anxiety and uneasiness. 2. The bottom of the NWS were now made into a more circular arch which supports the weight of the body and reduces the irregular angles when wearing GWS. This arch made the supporting area more wide which made the upholding the trunk of the body more effective. The whole bottom of the foot that supports the weight is more flexible in addition, increases the safeness of walking patterns and the momentum of the body. 3. The moment the heel of the foot of the NWS touch the ground, the range of the pressure were partially notable and the range of the pressure on the upper part of the thigh were dispersed The injuries that occurred while walking. primary factors when a shock related injuries are reduced Judgements of the impacts of the knees and the spinal column dispersing could be made.

• Korean Journal of Materials Research
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• v.25 no.3
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• pp.125-131
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• 2015

Fluorine-doped $SnO_2$ (FTO) thin film/Ag nanowire (NW) double layers were fabricated by means of spin coating and ultrasonic spray pyrolysis. To investigate the optimum thickness of the FTO thin films when used as protection layer for Ag NWs, the deposition time of the ultrasonic spray pyrolysis process was varied at 0, 1, 3, 5, or 10 min. The structural, chemical, morphological, electrical, and optical properties of the double layers were examined using X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, the Hall effect measurement system, and UV-Vis spectrophotometry. Although pure Ag NWs formed isolated droplet-shaped Ag particles at an annealing temperature of $300^{\circ}C$, Ag NWs covered by FTO thin films maintained their high-aspect-ratio morphology. As the deposition time of the FTO thin films increased, the electrical and optical properties of the double layers degraded gradually. Therefore, the double layer fabricated with FTO thin films deposited for 1 min exhibited superb sheet resistance (${\sim}14.9{\Omega}/{\Box}$), high optical transmittance (~88.6 %), the best FOM (${\sim}19.9{\times}10^{-3}{\Omega}^{-1}$), and excellent thermal stability at an annealing temperature of $300^{\circ}C$ owing to the good morphology maintenance of the Ag NWs covered by FTO thin films.

• Korean Journal of Materials Research
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• v.29 no.2
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• pp.87-91
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• 2019

We report on stretchable electrochromic films of poly(3-hexylthiophene) (P3HT) fabricated on silver nanowire (AgNW) electrodes. AgNWs electrodes are prepared on polydimethylsiloxane (PDMS) substrates using a spray coater for stretchable electrochromic applications. On top of the AgNW electrode, poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is introduced to ensure a stable resistance over the electrode under broad strain range by effectively suppressing the protrusion of AgNWs from PDMS. This bilayer electrode exhibits a high performance as a stretchable substrate in terms of sheet resistance increment by a factor of 1.6, tensile strain change to 40 %, and stretching cycles to 100 cycles. Furthermore, P3HT film spin-coated on the bilayer electrode shows a stable electrochromic coloration within an applied voltage, with a color contrast of 28.6 %, response time of 4-5 sec, and a coloration efficiency of $91.0cm^2/C$. These findings indicate that AgNWs/PEDOT:PSS bilayer on PDMS substrate electrode is highly suitable for transparent and stretchable electrochromic devices.