• Journal of the Semiconductor & Display Technology
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• v.16 no.3
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• pp.31-35
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• 2017

We have fabricated flexible and stretchable pressure sensors using silver nanowires (AgNWs) and analyzed their electric responses. AgNWs are spray coated directly onto uncured polydimethylsiloxane (PDMS) such that AgNWs penetrate into the uncured PDMS, enhancing the adhesion properties of AgNWs. However, the single-layered AgNW sensor exhibits unstable electric response and low pressure sensitivity. To tackle it, we have coated a conductive polymer, poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) onto the AgNW layer. Such a hybrid bilayer sensor ensures a stable electric response because the over-coating layer of PEDOT:PSS effectively suppresses the protrusion of AgNWs from PDMS during release. To enhance the sensitivity further, we have also fabricated a stacked bilayer AgNW sensor. However, its electric response varies depending sensitively on the initial overlap pressure.

• Journal of Integrative Natural Science
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• v.5 no.4
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• pp.211-215
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• 2012

Single-crystalline silicon nanowire arrays (SiNWAs) using electroless metal-assisted etchings of p-type silicon were successfully fabricated. Ag nanoparticle deposition on silicon wafers in HF solution acted as a localized micro-electrochemical redox reaction process in which both anodic and cathodic process took place simultaneously at the silicon surface to give SiNWAs. The growth effect of SiNWs was investigated by changing of etching times. The morphologies of SiNWAs were obtained by SEM observation. Well-aligned nanowire arrays perpendicular to the surface of the silicon substrate were produced. Optical characteristics of SiNWs were measured by FT-IR spectroscopy and indicated that the surface of SiNWs are terminated with hydrogen. The thicknesses and lengths of SiNWs are typically 150-250 nm and 2 to 5 microns, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.364.1-364.1
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• 2016

We report the characteristics of individual ultra-long SnO2 nanowires(NWs) grown on sapphire(0001) substrates by vapor transport method. NWs, with typical lengths of >$400{\mu}m$, grew in the form of NW bundles under a hydrogen reducing atmosphere, without metal catalysts. The individual NWs were examined using high-resolution X-ray diffraction, transmission electron microscopy, and micro-Raman spectroscopy. The results revealed that the SnO2 NWs grew as high-quality, tetragonal-rutile-phase single crystals with mosaic distributions of $0.02^{\circ}$ and $0.026^{\circ}$ in the (101) and (110) planes, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.9
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• pp.572-576
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• 2017

A hybrid transparent electrode was fabricated with graphene and silver nanowires (Ag NWs). Three different processes were used to fabricate the hybrid electrode. Measurements of the sheet resistances, transmittances, and surface roughnesses of the hybrid electrodes were used to identify the optimal fabrication process. The surface roughness of the hybrid electrodes with Ag NWs embedded in a transparent polymer matrix was significantly lower than that of the other hybrid electrodes. A hybrid electrode fabricated by transferring graphene onto Ag NWs after spin-coating the Ag NWs onto the substrate showed the lowest sheet resistance. The transmittance of the hybrid electrodes was comparable to that of Ag NW electrodes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.115-116
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• 2005

Si nanowires (NWs) were fabricated in vacuum furnace by using a Nd:YAG pulsed laser with the wavelength of 325 nm. Commercial p-type Si wafer is used for target, and any catalytic materials are not used. Scanning electron microscopy (SEM) images indicate that the diameters of Si NWs ranged from 10 to 150 nm. Si NWs have various size and shape with a substrate position inside a furnace, and their morphologic construction is reproducible. The formation mechanism of the NWs is discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.5-5
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• 2008

We design and demonstrate the controled doping into ZnO nanowires (NWs) adopting self-contrived hot-walled pulsed laser deposition (HW-PLD). Optimized synthesis conditions with the diversified dopants guarantee the excellent crystalinity and morphology as well as electrical properties of the NWs. Proprietary target rotating system in the HW-PLD fuels the controlled formation and doping of the NWs. Prepared NWs sensitive to the environment are systematically characterized, and the doping mechanism is discussed.

• Bulletin of the Korean Chemical Society
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• v.34 no.2
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• pp.590-594
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• 2013

Semiconductor CdSe nanowires (NWs) can serve as model systems for investigating the physical properties of one-dimensional (1D) nanostructures and have great potential for applications in electronics and photonic nanodevices. With numerous attractions arisen from their physical properties, CdSe NWs have been synthesized by vapor-liquid-solid (VLS) methods, but they have some limitations of high reaction temperature and low production. Here, we synthesized CdSe NWs via the solution-liquid-solid (SLS) mechanisms using bismuth (Bi) covered substrates as a low-melting point catalyst and compared the products after injecting identical amount of Se and different amount of tributylphosphine (TBP). CdSe NWs have similar diameters but longer lengths with decreasing TBP, so we proposed the role of TBP as a solvent and capping agent of Se.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.291.2-291.2
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• 2013

Growth behavior of b-Ga2O3 nanowires (NWs) on sapphire(0001) substrates during radio-frequency magnetron sputtering is reported. Upon fabrication, flat thin films grew initially, subsequent to which, NW bundles were formed on the surface of thin film with increasing film thickness. This transition of the growth mode occurred only at temperatures greater than ${\sim}450^{\circ}C$. The b-Ga2O3 NWs were grown through the self-catalytic vapor-liquid-solid mechanism with self-assembled Ga seeds. Secondary growth of NWs, which occurred from the sides of primary NWs resulting in branched NW structures, was also observed. Finally, the room temperature photoluminescence properties of as-grown and annealed b-Ga2O3 NW samples were investigated.

• Journal of the Korean Physical Society
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• v.73 no.9
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• pp.1283-1288
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• 2018

In this work, we investigate polarization-dependent excitation of the propagating surface plasmon polariton (SPP) modes in gold nanowires (Au NWs) combined with gold nanoparticles (Au NPs). The light coupling from focused light to SPPs on Au NWs is investigated for different structural combinations of Au NWs with Au NPs, using full-wave finite-element numerical simulations. The results show that the excitation of SPPs changes remarkably on varying the orientation of the NP on NW or the polarization angle of the incident light. Metallic NWs combined with NPs can be applied to the polarization-resolved SPP coupling in various optical and optoelectronic devices including photonic circuits and optical sensors.

• Journal of the Semiconductor & Display Technology
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• v.20 no.3
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• pp.167-171
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• 2021

The core-shell InGaN/GaN Multi Quantum Well-Nanowires (MQW-NWs) that were selectively grown on oxide templates with perfectly circular hole patterns were highly crystalline and were shaped as high-aspect-ratio pyramids with semi-polar facets, indicating hexagonal symmetry. The formation of the InGaN active layer was characterized at its various locations for two types of the substrates, one containing defect-free MQW-NWs with GQDs and the other containing MQW-NWs with defects by using HRTEM. The TEM of the defect-free NW showed a typical diode behavior, much larger than that of the NW with defects, resulting in stronger EL from the former device, which holds promise for the realization of high-performance nonpolar core-shell InGaN/GaN MQW-NW substrates. These results suggest that well-defined nonpolar InGaN/GaN MQW-NWs can be utilized for the realization of high-performance LEDs.