• Proceedings of the KIPE Conference
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• 2015.07a
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• pp.485-486
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• 2015

This paper introduces the new 1200V $SPM^{(R)}$ (Smart Power Module), which is fully optimized and intelligent integrated IGBT inverter modules for up to 6kW motor drive applications. It utilizes newly developed NPT trench IGBT with the advanced STEALTHTM freewheeling diode, and built-in bootstrap diode. HVICs, multi-function LVIC, and built-in thermistor provide good reliable characteristics for the entire system. This module also takes technical advantage of DBC(Direct Bonded Copper) substrate for the better thermal performance. This paper provides an overall description of the newly developed 1200V/35A $SPM^{(R)}$ 2 product.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.2
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• pp.158-163
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• 2023

Recently, the global demands for high voltage power semiconductors are increasing across various industrial fields. The use of electric cars with high safety and convenience is becoming practical, and IGBT modules of 3.3 kV and 1.2 kA or higher are used for electric locomotives. Delicate design and advanced process technology are required, and research on the optimization of high-voltage IGBT parts is urgently needed in the industry. In this study, we attempted to design a simulation process through TCAD (technology computer-aid design) software to optimize the process conditions of the fielding process among the core unit processes for an especial high yield voltage. As well, the prior circuit technology design and a ring pattern with a large number of ring formation structures outside the wafer similar to the chip structure of other companies were constructed for 3.3 kV NPT-IGBT through a unit process demonstration experiment. The ring pattern was designed with 21 rings and the width of the ring was 6.6 ㎛. By changing the spacing between patterns from 17.4 ㎛ to 35.4 ㎛, it was possible to optimize the spacing from 19.2 ㎛ to 18.4 ㎛.

• Proceedings of the KIEE Conference
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• 2005.10c
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• pp.158-161
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• 2005

For low power motor control, there are increasing demands for compactness, cost effective and built in many functions. Hence Intelligent Power Module(IPM) is considered as an important technology in inverter-driven motor applications. Regarding BID-IPM(Built In DC/DC converter, Intelligent Power Module) newly developed to integrate NPT-IGBT, HVIC and Flyback converter in a compact package, this paper discussed design of BID-IPM and presented the experimental results by using signal source board and equivalent load test board.

• Nuclear Engineering and Technology
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• v.49 no.1
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• pp.209-215
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• 2017

Fast neutron irradiation was used to improve the switching speed of a 600-V nonpunch-through insulated gate bipolar transistor. Fast neutron irradiation was carried out at 30-MeV energy in doses of $1{\times}10^8n/cm^2$, $1{\times}10^9n/cm^2$, $1{\times}10^{10}n/cm^2$, and $1{\times}10^{11}n/cm^2$. Electrical characteristics such as current-voltage, forward on-state voltage drop, and switching speed of the device were analyzed and compared with those prior to irradiation. The on-state voltage drop of the initial devices prior to irradiation was 2.08 V, which increased to 2.10 V, 2.20 V, 2.3 V, and 2.4 V, respectively, depending on the irradiation dose. This effect arises because of the lattice defects generated by the fast neutrons. In particular, the turnoff delay time was reduced to 92 nanoseconds, 45% of that prior to irradiation, which means there is a substantial improvement in the switching speed of the device.