• Asian-Australasian Journal of Animal Sciences
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• v.26 no.6
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• pp.845-855
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• 2013

Requirements of dietary chloride (dCl) and chloride salts were determined by using $4{\times}2$ factorial arrangement under four phase feeding program. Four levels (0.31, 0.45, 0.59 and 0.73%) and two sources ($NH_4Cl$ and $CaCl_2$) of the dCl were allocated to 1,472 chicks in eight dietary treatments in which each treatment was replicated four times with 46 birds per replicate. The four phase feeding program was comprised of four dietary phases: Prestarter (d 1 to 10), Starter (d 11 to 20), Grower (d 21 to 33) and Finisher (d 34 to 42); and diets were separately prepared for each phase. The cations, anions, pH, dissolved oxygen (DO), temperature, electrical conductivity (EC), total dissolved solids (TDS) and salinity were analyzed in drinking water and were not affected by dietary treatments. BW gain (BWG; $p{\leq}0.009$) and feed:gain (FG; $p{\leq}0.03$) were improved in $CaCl_2$ supplemented diets during d 1 to 10. The maximum response of BWG and FG was observed at 0.38% and 0.42% dCl, respectively, for d 34 to 42. However, the level of dCl for BWG during d 21 to 33 ($p{\leq}0.04$) and d 34 to 42 ($p{\leq}0.009$) was optimized at 0.60% and 0.42%, respectively. The level of dCl for optimized feed intake (FI; $p{\leq}0.006$), FG ($p{\leq}0.007$) and litter moisture (LM; $p{\leq}0.001$) was observed at 0.60%, 0.38% and 0.73%, respectively, for d 1 to 42. Water intake (DWI) was not affected by increasing dCl supplementation (p>0.05); however, the ratio between DWI and FI (DWI:FI) was found highest at 0.73% dCl during d 1 to 10 ($p{\leq}0.05$) and d 21 to 33 ($p{\leq}0.009$). Except for d 34 to 42 ($p{\leq}0.006$), the increasing level of dCl did not result in a significant difference in mortality during any phase. Blood pH and glucose, and breast and thigh weights (percentage of dressed weight) were improved while dressing percentage (DP) and gastrointestinal health were exacerbated with $NH_4Cl$ as compared to $CaCl_2$ supplemented diets ($p{\leq}0.001$). Higher plasma $Na^+$ and $HCO_3{^-}$ and lower $Cl^-$ and $Ca^{{+}{+}}$ were observed in $NH_4Cl$ supplemented diets ($p{\leq}0.001$). Increasing supplementation of dCl increased plasma $Cl^-$ ($p{\leq}0.04$; quadratically) and linearly reduced plasma $K^+$ ($p{\leq}0.001$), $Ca^{{+}{+}}$ ($p{\leq}0.003$), $HCO_3{^-}$ ($p{\leq}0.001$), and $Na^+$ ($p{\leq}0.001$; quadratically). Consequently, higher requirements of dietary chloride are suggested for feed intake; nevertheless, lower levels of dietary chloride are sufficient to support optimal BWG and FG with increasing age. The $NH_4Cl$ supplemented diets ameliorate breast and thigh meat yield along with overall energy balance (glucose).

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.68-68
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• 2011

As feature size is smaller, new technology are needed in semiconductor factory such as gap-fill technology for sub 100nm, development of ALD equipment for Cu barrier/seed, oxide trench etcher technology for 25 nm and beyond, development of high throughput Cu CMP equipment for 30nm and development of poly etcher for 25 nm and so on. We are focus on gap-fill technology for sub-30nm. There are many problems, which are leaning, over-hang, void, micro-pore, delaminate, thickness limitation, squeeze-in, squeeze-out and thinning phenomenon in sub-30 nm gap fill. New gap-fill processes, which are viscous oxide-SOD (spin on dielectric), O3-TEOS, NF3 Based HDP and Flowable oxide have been attempting to overcome these problems. Some groups investigated SOD process. Because gap-fill performance of SOD is best and process parameter is simple. Nevertheless these advantages, SOD processes have some problems. First, material cost is high. Second, density of SOD is too low. Therefore annealing and curing process certainly necessary to get hard density film. On the other hand, film density by Flowable oxide process is higher than film density by SOD process. Therefore, we are focus on Flowable oxide. In this work, dielectric film were deposited by PECVD with TSA(Trisilylamine - N(SiH3)3) and NH3. To get flow-ability, the effect of plasma treatment was investigated as function of O2 plasma power. QMS (quadruple mass spectrometry) and FTIR was used to analysis mechanism. Gap-filling performance and flow ability was confirmed by various patterns.

• Asian-Australasian Journal of Animal Sciences
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• v.26 no.7
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• pp.961-970
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• 2013

Eight multiparous Holstein cows ($569{\pm}47$ kg of BW; $84{\pm}17$ DIM) were used to evaluate the effects of different levels of coarsely ground wheat (CGW) as replacements for ground corn (GC) in diets on feed intake and digestion, ruminal fermentation, lactation performance, and plasma metabolites profiles in dairy cows. The cows were settled in a replicated $4{\times}4$ Latin square design with 3-wk treatment periods; four cows in one of the replicates were fitted with rumen cannulas. The four diets contained 0, 9.6, 19.2, and 28.8% CGW and 27.9, 19.2, 9.6, and 0% GC on dry matter (DM) basis, respectively. Increasing dietary levels of CGW, daily DM intake tended to increase quadratically (p = 0.07); however, apparent digestibility of neutral detergent fiber (NDF) and acid detergent fiber (ADF) were significantly decreased (p<0.01) in cows fed the 28.8% CGW diets. Ruminal pH remained in the normal physiological range for all dietary treatments at all times, except for the 28.8% CGW diets at 6 h after feeding; moreover, increasing dietary levels of CGW, the daily mean ruminal pH decreased linearly (p = 0.01). Increasing the dietary levels of CGW resulted in a linear increase in ruminal propionate (p<0.01) and ammonia nitrogen ($NH_3$-N) (p = 0.06) concentration, while ruminal acetate: propionate decreased linearly (p = 0.03) in cows fed the 28.8% CGW diets. Milk production was not affected by diets; however, percentage and yield of milk fat decreased linearly (p = 0.02) when the level of CGW was increased. With increasing levels of dietary CGW, concentrations of plasma beta-hydroxybutyric acid (BHBA) (p = 0.07) and cholesterol (p<0.01) decreased linearly, whereas plasma glucose (p = 0.08), insulin (p = 0.02) and urea nitrogen (p = 0.02) increased linearly at 6 h after the morning feeding. Our results indicate that CGW is a suitable substitute for GC in the diets of dairy cows and that it may be included up to a level of 19.2% of DM without adverse effects on feed intake and digestion, ruminal fermentation, lactation performance, and plasma metabolites if the cows are fed fiber-sufficient diets.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.56-63
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• 1994

The effects of sulfur treatments on the barrier heithts of Schottky contacts and the interface-state density of metal-insulator-semiconductor (MIS) capacitors on InP have been investigated. Schottky contacts were formed by the evaporation of Al, Au, and Pt on n-InP substrate before and after (NH$_{4}$)$_{2}$S$_{x}$ treatments, respectively. The barrier height of InP Schottky contacts was measured by their current-voltage (I-V) and capacitance-voltage (C_V) characteristics. We observed that the barrier heights of Schottky contacks on bare InP were 0.35~0.45 eV nearly independent of the metal work function, which is known to be due to the surface Fermi level pinning. In the case of sulfur-treated Au/InP ar Pt/InP Schottky diodes, However, the barrier heights were not only increased above 0.7 eV but also highly dependent on the metal work function. We have also investigated effects of (NH$_{4}$)$_{2}$S$_{x}$ treatments on the distribution of interface states in Si$_{3}$N$_{4}$InP MIS diodes where Si$_{3}$N$_{4}$ was provided by plasma enhanced chemical vapor deposition (PECVD). The typical value of interface-state density extracted feom 1 MHz C-V curve of sulfur-treated SiN$_{x}$/InP MIS diodes was found to be the order of 5${\times}10^{10}cm^{2}eV^{1}$. This value is much lower than that of MiS diodes made on bare InP surface. It is certain, therefore, that the (NH$_{4}$)$_{2}$S$_{x}$ treatment is a very powerful tool to enhance the barrier heights of Au/n-InP and Pt/n-InP Schottky contacts and to reduce the density of interface states in SiN$_{x}$/InP MIS diode.

• Korean Journal of Environmental Biology
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• v.35 no.2
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• pp.128-133
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• 2017

To determine the optimum water temperature (a temperature which minimizes metabolic activities and stress in fish) for long distance transportation of red-spotted grouper (Epinephelus akaara), by evaluating the behavior, survival and physiological and hematological responses to variable water temperature conditions (9, 12, 15, 18 and $21^{\circ}C$) for 48 hours. Fish exposed to $9^{\circ}C$ died at 48 hours exposure, but those exposed to 12, 15, 18 and $21^{\circ}C$ treatment groups all survived. Fish in the 15, 18 and $21^{\circ}C$ exposure groups exhibited normal swimming, while those exposed to $12^{\circ}C$ were observed to be stationary at the bottom of the tank. The plasma cortisol and glucose concentration were higher in fish exposed to $12^{\circ}C$ than at other temperature conditions. The fish in the 12 and $15^{\circ}C$ groups had significantly higher hematocrit (Ht) and hemoglobin (Hb) than those in the 18 and $21^{\circ}C$ groups (P<0.05). Levels of aspartate aminotransferase (AST), $NH_3$ and osmolality showed a pattern similar to the levels of plasma cortisol, while alanine aminotransferase (ALT) and total protein did not significantly vary among the experimental groups. These results indicate that the optimum water temperature for long distance transportation of the red-spotted grouper is $15^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.204-205
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• 2011

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.

• Asian-Australasian Journal of Animal Sciences
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• v.17 no.7
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• pp.960-966
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• 2004

The purpose of this study was to evaluate the effects of protein supplementation of green tea waste (GTW) on the performance of lactating cows. Another aim was to increase resource utilization and to eliminate any environmental negative impact from the tea waste. GTW from a beverage company was ensiled at a low pH (<4.0) and high acetic acid and lactic acid concentration, and it contained high crude protein (CP, 34.8%), total extractable tannins (TET, 9.2%) and condensed tannin (CT, 1.7%). Two experiments were conducted to investigate the palatability and performance in lactating cows fed GTW. In the palatability trial, three lactating cows were allocated to three dietary treatments in a 3$\times$3 Latin square design. The animals were offered a total mixed ration (TMR) including GTW at rates of 0, 2.5 and 5.0% on a dry matter (DM) basis. Total DM intake was not different among the treatments. In the performance trial, four lactating cows were used in a 2$\times$2 Latin square design with a 3 week sampling period. GTW was incorporated into TMR at a rate of 5.0% on a DM and 10.0% on a CP basis. Thus GTW replaced alfalfa hay and soybean meal at a level of 25.0% on a DM. DM and CP intake were not affected by the inclusion of GTW, whereas TET and CT intake were significantly increased (p<0.001). Milk production, milk composition and the efficiency of milk production were not altered by the GTW inclusion. Although ruminal pH and VFA, and blood urea nitrogen were not changed, ruminal $NH_{3}-N$ and plasma total cholesterol were relatively low in the GTW group, but not significantly different. The excretion of urinary purine derivatives and estimated MN supply were also not significantly affected by GTW treatment. It is therefore concluded that GTW can be used as a protein source without any detrimental effects on the performance of lactating cows.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.28-28
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• 2001

$TiCl_44,{\;}AICl_3,{\;}H_2,{\;}Ar,{\;}NH_3$ 기체를 사용하여 플라즈마 화학 증착법으로 $(Ti_{1-x}AI_x)N$ 피막을 증착한 후 진공열처리 실험을 통해 열처리 전후에 나타나는 피막의 가계적 특성 변화 및 상변화 양상에 대해 연구하였다. 기판으로는 M2 고속도강과 알루미나(${\alpha}-Al_2O_3$)를 사용하였으며, 열처리 실험은 진공 열처리로를 이용하여 $800$ ~ $1100^{\circ}C$ 에서 진행하였다. M2 고속도강 위에 증착한 $(Ti_{1-x}AI_x)N$ 피막은 모두 (200) 우선 방위를 갖고 있었으며, AI의 함량이 높아짐에 따라 입자의 크기가 미세해져 $(Ti_{0.2}AI_{0.8})N$ 의 경우 수 nm의 업자들로 이루어져 있었다. 열처리 시간을 일정하게 하고, 그 온도를 증가시킬 경우 비교적 낮은 온도 영역($~900^{\circ}C$)에서는 경도 증가를 나타내지만, 열처리가 더욱 진행됨에 따라 다시 경도가 감소하는 양상을 나타내었으며, 열처리 온도를 일정하게 하고 열처리 시간을 변화 시킬 경우에도 초기에 경도가 증가하다가 열처리가 진행됨에 따라 경도가 다시 감소하는 현상을 관찰 하였다. 이때 경도증가 정도는 Al 함량이 높을 수록 뚜렷하고 오래 지속되었으며, $(Ti_{0.2}AI_{0.8})N$ 피막의 경우 열처리 전 $2000HK_{0.01}$에서 열처리 후 $4500HK_{0.01}$로, 매우 큰 경도 증가를 나타내었다. 이와 같은 열처리 전후의 기계적 특성 변화는 준 안정상의 $(Ti_{1-x}AI_{x})N$ 피막에서, 열처리가 진행됨에 따라 미세한 AlN 업자가 석출되면서 나타나는 현상으로, 고분해능 전자현미경(HRTEM) 분석을 통해 경도가 증가한 시편의 경우 석출상의 크기가 5nm 이하로 매우 작고 대체로 기지와 연속적인 계면을 형성하나, 열처리가 진행될수록 석 출상의 크기가 커지고 임계크기 이상에 이르면 연속적인 계면은 거의 발견되지 않고, 대부 분 불연속적이고 확연한 계면을 형성함을 관찰 할 수 있었다. 알루미나(${\alpha}-Al_2O_3$) 기판 위에 증착한 $(Ti_{1-x}AI_{x})N$ 피막은 마찬가지로 (200) 우선 방위를 나타내었으나, 그 입자의 크기가 수십 nm로 고속도강위에 증착한 피막에 비해 상당히 크게 형성되었다. 또한 열처리 후에 AIN의 석출이 진행됨에도 불구하고 경도 증가는 나타나지 않고, 열처리가 진행됨에 따라 경도가 감소하는 양상만을 나타내었다. 결국 $(Ti_{1-x}AI_{x})N$ 피막이 열처리 전후에 보아는 기계적 특성의 변화 양상은 열역학적으로 안정한 Wurzite-AlN의 석출에 따른 것으로 AlN 석출상의 크기에 의존하며, 또한 이러한 영향은 $(Ti_{1-x}AI_{x})N$ 피막에 존재하는 AI의 함량이 높고, 초기에 증착된 막의 업자 크기가 작을 수록 클 것으로 여겨진다.