• Title/Summary/Keyword: NH3 Plasma

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Selective Catalytic Oxidation of Ammonia over Noble Catalysts Supported on Acidic Fe-ZSM5 Supports (산성 Fe-ZSM5 담체에 담지된 귀금속 촉매를 활용한 암모니아의 선택적 산화반응)

  • Kim, Min-Sung;Lee, Dae-Won;Lee, Kwan-Young
    • Clean Technology
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    • v.18 no.1
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    • pp.89-94
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    • 2012
  • In this study, we investigated the activity of Pd and Pt supported on acidic Fe-ZSM5 supports for selective catalytic oxidation of ammonia ($NH_3$-SCO). Among the catalysts, Pt/Fe-ZSM5 catalyst exhibited superior $NH_3$-SCO activity to Pd/Fe-ZSM5 catalyst. We also tested Pt/Fe-ZSM5 catalysts with different Fe loading using ion-exchange method to prepare Fe-ZSM5 supports, which resulted in the increased catalytic performance with smaller Fe content: $NH_3$ was oxidized completely at low temperature ($250^{\circ}C$). The physicochemical properties of Fe-ZSM5 were investigated to figure out the relationship between the characteristics of the catalysts and the catalytic activity on $NH_3$-SCO by Inductively coupled plasma-atomic emissions spectrometer (ICP-AES), $N_2$ sorption, X-ray diffraction (XRD), temperature programmed desorption of $NH_3$ ($NH_3$-TPD) technique.

The Study on Characteristics of N-Doped Ethylcyclohexane Plasma-Polymer Thin Films

  • Seo, Hyeon-Jin;Jo, Sang-Jin;Lee, Jin-U;Jeon, So-Hyeon;Bu, Jin-Hyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.540-540
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    • 2013
  • In this studying, we investigated the basic properties of N-doped plasma polymer. The N-doped ethylcyclohexane plasma polymer thin films were deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition method. Ethylcyclohexenewas used as organic precursor (carbon source) with hydrogen gas as the precursor bubbler gas. Additionally, ammonia gas [NH3] was used as nitrogen dopant. The as-grown polymerized thin films were analyzed using ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, Raman spectroscopy, FE-SEM, and water contact angle measurement. The ellipsometry results showed the refractive index change of the N-doped ethylcyclohexene plasma polymer film. The FT-IR spectrashowed that the N-doped ethylcyclohexene plasma polymer films were completely fragmented and polymerized from ethylcyclohexane.

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A Study on Reaction Characteristics for NOx Reduction in Flue Gas Denitrification using Plasma (플라즈마 배연탈질에서 NOx 저감에 관한 반응제 특성 연구)

  • Baek, Hyun Chang;Shin, Dae Hyun;Woo, Je Kyung;Kim, Sang Guk;Kim, Dong Chan;Park, Yeong Seong
    • Journal of Korean Society of Environmental Engineers
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    • v.22 no.12
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    • pp.2247-2254
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    • 2000
  • This study was carried out to investigate the reaction characteristics of NOx with reagents to grope the power consumption rate reduction and NOx removal rate improvement for the non-thermal plasma denitrification process. The experiments were performed using the real flue gas and wire-plate type plasma reactor. and the flow rate of real flue gas is $20Nm^3/hr$. Paraffinic and olefinic hydrocarbons and ammonia were used as reagents. Olefinic hydrocarbon oxidizes NO more actively than paraffinic hydrocarbon under the non-thermal plasma conditions, resulting in the generation of large amount of $NO_2$ and a very small amount of CO. When the initial NOx concentration increases. oxidation rate of NO decreases and the consumption rate of olefinic hydrocarbon increases significantly. On the other hand. $NH_3$ did not promote reduction reaction with NO under non-thermal plasma conditions. however, there was a tendency that the NHa was effective to remove the $NO_2$ oxidized by olefinic hydrocarbon.

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Efficient Desulfurization and Denitrification by Low Temperature Plasma Process (저온 플라즈마 공정에 의한 효율적인 탈황 및 탈질)

  • Kim, Sung-Min;Kim, Dong-Joo;Kim, Kyo-Seon
    • Korean Chemical Engineering Research
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    • v.43 no.1
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    • pp.129-135
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    • 2005
  • In this study, we have analyzed the removal efficiencies of $SO_2$ and $SO_2/NO$ by the pulsed corona discharge process and investigated the effects of several process variables on those removal efficiencies systematically. The effects of process variables such as applied voltage, pulse frequency, residence time, and initial concentrations of reactants (NO, $SO_2$, $NH_3$, $H_2O$, and $O_2$) on the removal efficiency were analyzed. As the applied voltage, the pulse frequency or the residence time increases or as the $O_2$ or the $H_2O$ or the $NH_3$ concentration in the inlet feed gas stream increases, the $SO_2$ removal efficiencies and the simultaneous removal efficiencies of $SO_2/NO$ also increase. These experimental results can be used as a basis to design the pulsed corona discharge process to remove $NO_x$ and $SO_x$.

Construction of a PEALD System and Fabrication of Cobalt Thin Films (PEALD 장치 제작 및 Co박막 증착)

  • Lee, D.H.;Noh, S.J.
    • Journal of the Korean Vacuum Society
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    • v.16 no.2
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    • pp.110-115
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    • 2007
  • A plasma enhanced atomic layer deposition(PEALD) system has been constructed adopting an inductively coupled plasma(ICP) source with an ALD system, and its plasma generation was carried out. Cobalt thin films were deposited on a p-type Si(100) wafer at $230^{\circ}C$. $Co_{2}(CO)_{6}$ was used as a cobalt precursor, $NH_{3}$ as a reactant, and Ar as a carrier and purge gas. The properties of the thin films were investigated using field emission scanning electron microscopy(FESEM) and auger electron spectroscopy(AES). Large amounts of impurities were found in both the ALD film and the PEALD film, however, the amount of impurities in the PEALD film was reduced to about 50 % compared to that in the ALD film. It was found that $NH_{3}$ plasma, very effectively, induces the reaction with carbon in a cobalt precursor.

Atmospheric Pressure Plasma Etching Technology for Forming Circular Holes in Perovskite Semiconductor Materials (페로브스카이트 반도체 물질에 원형 패턴을 형성하기 위한 상압플라즈마 식각 기술)

  • Kim, Moojin
    • Journal of Convergence for Information Technology
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    • v.11 no.2
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    • pp.10-15
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    • 2021
  • In this paper, we formed perovskite (CH3NH3PbI3) thin films on glass with wet coating methods, and used various analytical techniques to discuss film thickness, surface roughness, crystallinity, composition, and optical property. The coated semiconductor material has no defects and is uniform, the surface roughness value is very small, and a high absorption rate has been observed in the visible light area. Next, in order to implement the hole shape in the organic-inorganic layer, Samples in the order of a metal mask with holes at regular intervals, a glass coated with a perovskite material, and a magnet were etched with atmospheric pressure plasma equipment. The shape of the hole formed in the perovskite material was analyzed by changing the time. It can be seen that more etching is performed as the time increases. The sample with the longest processing time was examined in more detail, and it was classified into 7 regions by the difference according to the location of the plasma.

Inactivation of Sewage Microorganisms using Multi-Plasma Process (멀티 플라즈마 공정을 이용한 하수 미생물의 불활성화)

  • Kim, Dong-Seog;Park, Young-Seek
    • Journal of Environmental Science International
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    • v.23 no.5
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    • pp.985-993
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    • 2014
  • For the field application of dielectric barrier discharge plasma reactor, a multi-plasma reactor was investigated for the inactivation of microorganisms in sewage. We also considered the possibility of degradation of non-biodegradable matter ($UV_{254}$) and total organic carbon (TOC) in sewage. The multi-plasma reactor in this study was divided into high voltage neon transformers, gas supply unit and three plasma modules (consist of discharge, ground electrode and quartz dielectric tube). The experimental results showed that the inactivation of microorganisms with treated water type ranked in the following order: distilled water > synthetic sewage effluent >> real sewage effluent. The dissolved various components in the real sewage effluent highly influenced the performance of the inactivation of microorganisms. After continuous plasma treatment for 10 min at 180 V, residual microorganisms appeared below 2 log and $UV_{254}$ absorbance (showing a non-biodegradable substance in water) and TOC removal rate were 27.5% and 8.5%, respectively. Therefore, when the sewage effluent is treated with plasma, it can be expected the inactivation of microorganisms and additional improvement of water quality. It was observed that the $NH_4{^+}$-N and $PO{_4}^{3-}$-P concentrations of sewage was kept at the constant plasma discharging for 30 min. On the other hand, $NO_3{^-}$-N concentration was increased with proceeding of the plasma discharge.

Effect of Low Temperature Plasma Pretreatment on the Color Depth of Wool Fabrics (양모직물의 염착농도에 미치는 저온플라즈마 처리의 영향)

  • 배소영;이문철
    • Textile Coloration and Finishing
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    • v.4 no.2
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    • pp.76-83
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    • 1992
  • Wool tropical and nylon taffeta were treated with low temperature plasma of $O_2$, $N_2$, NH$_3$, CF$_4$ and CH$_4$ for the intervals of 10 to 300 sec, and then dyed with leveling and milling type acid dyes in presence or absence of buffer solution. From the color depth of dyed fabrics, effect of plasma gases, treated time, dyeing time and temperature on dyeing property was studied. The results of the experiment can be summarized as follows: 1) The plasma treatments except methane gas increased the color depth of dyed wool fabrics, but not that of dyed nylon fabrics regardless of the plasma gases used. 2) The color depth of wool fabrics dyed in the dye bath without buffer solution was increased by the low temperature plasma, especially increased much more by CF$_4$ plasma treatment. It is found that with the identification of F- ion in the residual dye bath the hydrogen fluoride gas was adsorbed on wool fabrics in the plasma treatment. 3) The color depth of wool fabrics was increased with the time of $O_2$ and CF$_4$ plasma treatments. 4) In both cases of the leveling and milling type acid dyes, the rate of dyeing was increased in the low temperature plasma treatments, and it is found that the leveling type acid dye increased the color depth at relatively low temperature below 4$0^{\circ}C$, compared with the milling type acid dye.

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In-Line Hologram for Plasma Diagnostics

  • Kim, Byungwhan;Jung, Jin-Su
    • Journal of the Optical Society of Korea
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    • v.20 no.4
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    • pp.524-529
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    • 2016
  • Diagnostic sensors are demanded during plasma processes. Holograms of plasma taken with laser light without a reference beam were used to monitor behaviors of charged particles produced in nitrogen plasma as a function of electrode temperature ranging between 50 and 300℃. Holograms were characterized as a function of the pixel sum and grayscale value. Pixel sum calculated in identified grayscale ranges strongly correlated with ion density and emitted light intensity measured with a langmuir probe and optical emission spectroscopy, respectively. The performance was further evaluated with data acquired as a function of N2 and NH3 flow rates and improved correlations were observed in the new grayscale range. The confirmed correlations indicate that a hologram is a viable means to diagnose behaviors of plasma particles such as ions. Underlying principles are discussed in view of particle and charge composing vacuum and light.

Fabrication and Microstructure of Hydroxyapatite Coating Layer by Plasma Spraying (플라즈마 용사법에 의한 Hydroxyapatite코팅층의 제조와 미세구조)

  • 이치우;오익현;이형근;이병택
    • Journal of the Korean Ceramic Society
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    • v.41 no.3
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    • pp.259-265
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    • 2004
  • The microstructure of nano-sized hydroxyapatite (HAp) powders coating layer on ZrO$_2$ substrate was investigated, which was formed by plasma spray process. The nano-sized HAp powders were successfully synthesized by precipitation of Ca(NO$_3$)$_2$$.$4H$_2$O and (NH$_4$)$_2$HPO$_4$ solution. The HAp coating layer with thickness of 150∼250 $\mu\textrm{m}$ was free from the cracks at interfaces between the coating and ZrO$_2$ substrate. In the plasma sprayed HAp coating layer, the undesirable phases were not found, while in the HAp coating layer heat-treated at 800$^{\circ}C$, TTCP, and ${\beta}$-TCP phase were detected as well as HAp phase. However, at 900$^{\circ}C$, they were completely disappeared. At 1100$^{\circ}C$, XRD analysis revealed that the coating layer was composed of the highly crystallized HAp.