• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.2
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• pp.1032-1037
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• 2011

In this study, simulation and optimization works for a demethanizer column have been performed to obtain ethane and heavier products from a pretreated natural gas stream. Pretreated natural gas feed stream was partially condensed after being precooled by exchanging heat with demethanizer top vapor stream and by using an external refrigeration cycle with a propane refrigerant. Vapor stream was cooled further and partially condensed through a turbo-expander. The power generated from the expansion of turbo-expander was delivered to the compressor for the residue gas compression. Liquid stream was cooled by Joule-Thomson expansion valve and was fed to the middle section of the demethanizer. Recovery percent of ethane for feed natural was set to 80% and methane to ethane molar ratio was fixed as 0.0119. On the other hand, some of the cold heat could be recovered by splitting the feed stream and by exchanging heat with side reboiler in order to reduce the heat duty in the propane refrigeration cycle.

• Korean Chemical Engineering Research
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• v.51 no.2
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• pp.245-249
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• 2013

The depropanizing, debutanizing and deisobutanizing fractionation steps of processing natural gas liquids were improved through studying complex distillation arrangements, including the double dividing wall column arrangement (DDWC), the sequence including a dividing wall column (DWC) and a bottom DWC (BDWC), and the sequence including a DWC and a BDWC with top vapor recompression heat pump. These arrangements offer benefits by decreasing reboiler and condenser power consumption. Reducing the number of columns and their diameters can potentially reduce construction costs. The result also showed that operating cost could be reduced most significantly through novel combinations of internal and external heat integration: bottom dividing wall columns employing a top vapor recompression heat pump.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.912-915
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• 2004

A vacuum environment is very important for NGL(Next Generation Lithography) apparatuses such as EUVL(Extreme Ultra Violet Lithography) or EPL(Electron Projection Lithography) and so on. The performance of these systems is dominated by vacuum level of processing and positioning accuracy of a stage. So, ultra-precision stage usable in a high vacuum level is needed for the improved performance of these devices. In contrast to atmospheric condition, a special attention must be paid to guide bearing, actuator and other elements. In this paper, air bearing is adopted because of its very high motional accuracy. So, air bearing is designed to be vacuum compatible using differential exhaust method, which prevents air from entering into vacuum chamber. For this, leakage analysis is performed theoretically and verified from experiment.

• Journal of the Semiconductor & Display Technology
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• v.6 no.3
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• pp.25-33
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• 2007

A computationally efficient and accurate Monte Carlo (MC) simulator of electron beam lithography process, which is named SCNU-EBL, has been developed for semiconductor nanometer pattern design and fabrication. The simulator is composed of a MC simulation model of electron trajectory into solid targets, an Gaussian-beam exposure simulation model, and a development simulation model of photoresist using a string model. Especially for the trajectories of incident electrons into the solid targets, the inner-shell electron scattering of an target atom and its discrete energy loss with an incident electron is efficiently modeled for multi-layer resists and heterogeneous multi-layer targets. The simulator was newly applied to the development profile simulation of ZEP520 positive photoresist for NGL(Next-Generation Lithography). The simulation of ZEP520 for electron-beam nanolithography gave a reasonable agreement with the SEM experiments of ZEP520 photoresist.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2092-2094
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• 2000

As a next generation lithography (NGL) technology for VLSI semiconductor fabrication, electron beam, ion beam, X-ray and extreme ultraviolet(EUV) are considered as possible candidates. Among these methods, EUV lithography(EUVL) is thought to be the most probable because it is easily realized by improving current optical lithography technology. In order to set EUV radiation which can be applied to EUVL, it is essential to generate very high density and high temperature plasma stably. The method using a pulse power laser and a high voltage pulse discharge is commonly used to accomplish such a high density and high temperature plasma. In this paper we review the recent trends of the EUV generation technique by high density and high temperature plasma.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.241-246
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• 2002

극자외선 노광공정(EUVL: Extreme Ultraviolet Lithography)은 반도체 공정에서 0.1$\mu\textrm{m}$ 이하의 해상도를 실현하기 위해 연구되고 있는 유력한 차세대 노장공정(NGL: Next Generation Lithography)이다. [1] 본 연구에서는 극자외선 노광공정에서 사용되는 반사형 다층박막 미러를 제조하기 위해서 직접 제작한 전산모사 도구를 이용하여 130~135$\AA$의 파장 영역에서 고반사도를 가지는 효율적인 다층박막의 구조인자를 예측하였으며, 그러한 구조인자를 실현하기 위해서 상온(~300K)에서 마그네트론 스퍼터링을 이용하여 다층박막을 증착하였다. 증착조건 중에서, 공정압력에 따른 다층박막 계면 성장의 질적 의존성이 나타났으며, 결과적으로는 낮은 공정압력에서 더좋은 계면특성을 가지는 다층박막이 형성되었다. 다층박막의 구성물질로 Ru, Mo, Si을 사용하였으며, 다층박막의 구조분석은 high/low angle XRD, 단면 TEM images 등을 이용하여 분석되었다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.633-636
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• 2005

Imprint lithography is a promising method for high-resolution and high-throughput lithography using low-cost equipment. As with other nanoimprint methods, ultraviolet-nanoimprint lithography (UV-NIL) resolution appears to be limited only by template resolution, and offers a significant cost of ownership reduction when compared to other next generation lithography (NGL) methods such as EUVL and 157 nm lithography. The purpose of this paper is to suggest optimum values of control parameters of Imprio 100 manufactured by Molecular Imprint, Inc., which is the first commercially available UV-NIL tool, for sound nanoimprint. UV-NIL experiments were performed on Imprio 100 to find dispensing recipe for avoiding air entrapment. Dispensing recipe related to residual layer thickness and uniformity was optimized and 40 nm thick residual layer was achieved.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.2
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• pp.19-24
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• 2001

The effect of thickness variation and inter-diffusion layer on the reflectivity of Mo/Si multilayer has been investigated. The reflectivity of the imperfect Mo/Si multilayer with thickness variation of 28% was found to be lowered by 10.8% compared to that of ideal Mo/Si multilayers with 40-periods. When the inter-diffusion layer is taken into account, the reflectivity is decreased by 4.7% additionally. We also fecund that the reflectivity continued to increase until the 25th-layer but it showed irregular tendencies about increment and decrement from the 26th-layer of Mo/Si multilayer structures.

• Journal of the Semiconductor & Display Technology
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• v.15 no.3
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• pp.35-39
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• 2016

Extreme Ultraviolet Lithography (EUVL) is the most promising technique in the field of Next Generation Lithography (NGL) expected to be used in the 1x-nm node for High Volume Manufacturing (HVM). But there exits remaining challenges for proper defect control of EUV mask. It was considered development of EUV pellicle for protecting the EUV mask has many obstacles due to high extinction coefficient of EUV wavelength. Recently researchers in the industry of semiconductor argue about the necessity of EUV pellicle and make effort to achieve it. In this paper, we investigated that the relationship between imaging performance and transmittance of EUV pellicle quantitatively. We made in-house EUV pellicle and analyzed its imaging performance of the dependence of pellicle transmittance using Coherent Scattering Microscopy(CSM). The imaging performance of EUV mask with pellicle is affected by its transmittance and we found that the performance of EUV mask improved with higher transmittance pellicle.

• Microbiology and Biotechnology Letters
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• v.18 no.1
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• pp.98-102
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• 1990

A strain of Erwinia spp. was selected from the soil for the production of bacteriocin to the root rot plant pathogen. Bacteriocin producing gene was not located on plasmid but on chromosome. Genomic library of Erwinia spp. were made by using pLAFR 3 as a vector system for cloning of the gene. It was been cloned and expressed in E. coli DH 5 . Bacteriocin producing colony was composed of pLAFR 3 vector and 3.0 kb EcoRI fragment of Erwinia spp. ehromosomal DNA. The inserted fragment (3.0 kb) was possessed a EcoRI and BarnHI restriction sites.