• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2003.10a
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• pp.136-137
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• 2003

Recrystallization textures of ferritic stainless steel sheets of STS 430, the crystallographic texture was modified by means of cross rolling and subsequent annealing. The conventional normal rolling led to the formation of ｛334｝＜483＞ in the final recrystallization texture. Cross rolling in the present work was performed by a 45$^{\circ}$rotation of RD around ND. After recrystallization annealing the cross-rolled samples displayed stronger｛111｝//ND orientations. The cross rolled sample displayed a higher resistance against ridging.

• Korean Journal of Optics and Photonics
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• v.8 no.2
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• pp.111-115
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• 1997

Vertical-cavity surface-emitting laser(VCSEL)s operating at 1.3-micron wavelength for optical communication are fabricated by using Si/SiO$_2$dielectric quater-wave pairs on both sides of the InGaAsP(${\lambda}_g$=1.3 ${\mu}{\textrm}{m}$) gain material. VCSELs are optically pumped with a Nd-YAG laser in a pulsed mode and lasing around 1.3 microns is observed. Lasing characteristics such as threshold pump intensity as a function of mirror-reflectivity, polarization, and threshold pump density with pump spot size are investigated.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 1998.06a
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• pp.140-147
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• 1998

The texture evolution by deep drawing was investigated and the lattice rotation rate was predicted using rate sensitive model with full constraints boundary conditions. The calculated textures show different behaviors with the amount of the flange deformation and initial crystal orientations. Among the crystal orientations located parallel to RD, the crystal orientations around the D component rotated toward the Cu component, the crystal orientations along the ${\alpha}$ fiber rotated toward the {110}<001> and {110}<111> components during deep drawing. In the case of the part parallel to 45$^{\circ}$ with respect to RD, the crystal orientations around the D component rotated about ND and the crystal orientations along the ${\alpha}$ fiber also rotated toward the (110)[23] and (110)[27] components about ND. In the part parallel to TD, the crystal orientations around the D component rotated toward the Rotated Cube and the crystal orientations along the ${\alpha}$ fiber rotated toward the {110}<113> component.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.173-179
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• 1999

The effect of the surface activation treatment on the crystallization of the amorphous silicon film was investigated. The amorphous silicon film was deposited on the silica substrate with LPCVD technique. Wet blasting with silica slurry or exposure with Nd:YAG laser beam was applied on the amorphous silicon film before annealing for the crystallization. For the analysis of the crystallinity, XRD, Raman, and SEM were employed. In this investigation, the prior surface activation treatment like silica wet blasting or Nd:YAG laser beam exposure before annealing for the crystallization were found to be effective in the enhancement of the crystallization. It is believed that these treatment lower the activation energy required for the crystallization of the amorphous silicon film.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.10a
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• pp.166-169
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• 2006

A promising capacitor, which has conformable step coverage and good uniformity of thickness and composition, is needed to manufacture high-density non-volatile FeRAM capacitors with a stacked cell structure. In this study, ferroelectric $Bi_{3.61}Nd_{0.39}Ti_3O_{12}$ (BNT) thin films were prepared on $Pt(111)/Ti/SiO_2/Si$ substrates by the liquid delivery system MOCVD method. In these experiments, $Bi(ph)_3$, $Nd(TMHD)_3$ and $Ti(O^iPr)_2(TMHD)_2$ were used as the precursors and were dissolved in n-butyl acetate. The BNT thin films were deposited at a substrate temperature and reactor pressure of approximately $600^{\circ}C$ and 4.8 Torr, respectively. The microstructure of the layered perovskite phase was observed by XRD and SEM. The remanent polarization value (2Pr) of the BNT thin film was $31.67\;{\mu}C/cm^2$ at an applied voltage of 5 V.

• Journal of the Korean Ceramic Society
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• v.42 no.4
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• pp.219-223
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• 2005

A promising capacitor, which has conformable step coverage and good uniformity of thickness and composition, is needed to manufacture high-density non-volatile FeRAM capacitors with a stacked cell structure. In this study, ferroelectric $Bi_{3.61}Nd_{0.39}Ti_3O_{12}$ (BNdT) thin films were prepared on $Pt(111)/TiO_2/SiO_2/Si$ substrates by the liquid delivery system MOCVD method. In these experiments, $Bi(ph)_{3}$, $Nd(TMHD)\_{3}$ and $Ti(O^iPr)_{2}(TMHD)_{2}$ were used as the precursors and were dissolved in n-butyl acetate. The BNdT thin films were deposited at a substrate temperature and reactor pressure of approximately $600^{\circ}C$ and 4.8 Torr, respectively. The microstructure of the layered perovskite phase was observed by XRD and SEM. The remanent polarization value (2Pr) of the BNdT thin film was $31.67\;{\mu}C/cm^{2}$ at an applied voltage of 5 V.

• Korean Journal of Child Studies
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• v.12 no.2
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• pp.111-129
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• 1991

The present study investigated how the inconsistency between episodes in a story affects judgment of the importance of a sentence. In experiment I, 120 college students read 4 stories containing 3 episodes and judged each of the sentences, one after another. The results of the importance rating showed that adult subjects were sensitive to inconsistency between episodes. The analysis of episodes revealed a significant difference between episodes in all of the 4 stories, with lowest importance ratings given to the inconsistent episodes. In experiment II, 220 children were sampled from a private school of middle S.E.S.Status. 2nd-, 4th- and 6th- graders read 2 stories, and judged the importance of the sentences. It was found that children were less sensitive to inconsistencies in a story than adults. Younger children had more difficulty in the integration of inconsistent information. Especially in the 2nd episode, the importance rating was affected by grade [F(2,2627)=195.52, p<.01], suggesting that 6th graders were more sensitive to inconsistencies than the younger children. In contrast to adults, 2nd graders gave high importance ratings to inconsistent sentences as well as to consistent sentences.

• Korean Journal of Crystallography
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• v.5 no.2
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• pp.67-77
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• 1994

From the Y3-3xNd3xAl5O12single crystals grown by the Czochralski technique, various types of defects were detected and 1) the reason of opical in homogeneous phases, 2) the mechanism of formation of the iridum metal inclusions accompanying bubbles, and 3) the mechanism of formation of the core and facet were analysed After preparing the wafers of the <111> growth parallel, defscts were observed by the polarising microscope using a photoelasic effect and then some images of stress-birefringence were compared to their etch Pits patterns.

• Journal of Sericultural and Entomological Science
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• v.39 no.2
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• pp.140-145
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• 1997

Silkworm fed on mulgerry leaves with 1000 times diluted Insegar(main component : Fenoxycarb, ethyl-2-(4-phenoxyphenoxy)ethylcarbmate) and its effects was investigated on increase of the 5th larval silkgland weight and silk quality. The oral application of fenoxycarb showed increase of the silkgland weight. The whole period of the silkgland weight falls on the 2nd instar treatment by 13%, the 3rd day of the 4th instar by 111%(3100 mg) and the whole period of the 5th instar treatment rather decreased it by 66%(497 mg), as compared to 1470mg of the control. Female and male both increased 15%(1779mg) and 12%(1554mg) of the silkgland weight with the 2nd instar treatment, as compared to 1548mg and 1391mg in control, respectively. 118%(3368mg) and 104%(2832mg) of increase in the silkgland weight were also showed with the 3rd day of the 4th instar treatment but 70%(463mg) and 61%(539mg) of decrease were shown with the 5th instar treatment. The maximum weight of the middle silkgland weight increased by 6%(1248mg) and 127%(2673mg) with the 2nd instar and with the 3rd day of the 4th instar, respectively but 67%(393mg) of decrease took place, as compared to 1175mg of the control. The maximum increase of the posterior silkgland weight with whole peried of the 2nd instar treatment increased 12%(419mg) and 75%(656mg) and 64%(135mg) of decrease was shown, as compared to 374mg of the control. The oral application of Insegar at the 2nd instar increased 26 m of cocoon length, 4.0 cg of the cocoon filament weight and 0.21d of the silk denier, as compared to 1147 m of the cocoon length, 38 cg of the cocoon filament, 2.99d of the silk denier, weight of cocoon filament and silk denier, respectively but denier variance narrowed to 0.33d, as compared to that of the control.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.135-136
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• 2006

Bismuth titanate ($Bi_4Ti_3O_{12}$, BIT) thin film has been studied intensively in the past decade due to its large remanent polarization, low crystallization temperature, and high Curie temperature. Substitution of various trivalent rare-earth cations (such as $La^{3+}$, $Nd^{3+}$, $Sm^{3+}$ and $Pr^{3+}$) in the BIT structure is known to improve its ferroelectric properties, such as remanent polarization and fatigue characteristics. Among them, neodymuim-substituted bismuth titanate, ((Bi, Nd)$_4Ti_3O_{12}$, BNT) has been receiving much attention due to its larger ferroelectricity. In this study, Ferroelectric $Bi_{3.3}Nd_{0.7}Ti_3O_{12}$ thin films were successfully fabricated by liquid delivery MOCVD process onto Pt(111)/Ti/$SiO_2$/Si(l00) substrates. Fabricated polycrystailine BNT thin films were found to be random orientations, which were confirmed by X-ray diffraction and scanning electron microscope analyses. The remanent polarization of these films increased with increase in annealing temperature. And the film also demonstrated fatigue-free behavior up to $10^{11}$ read/write switching cycles. These results indicate that the randomly oriented BNT thin film is a promising candidate among ferroelectric materials useful for lead-free nonvolatile ferroelectric random access memory applications.