• Journal of the Korea Institute of Military Science and Technology
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• v.18 no.2
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• pp.139-145
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• 2015

In this paper, the flexible piezoelectric nanocomposite generator(NCG) device based on $BaTiO_3$ nanostructures was fabricated via simple and low-cost spin coating method. The $BaTiO_3$ nanostructures synthesized by self-assembly reaction showed dendrite morphologies. To produce the piezoelectric nanocomposite(p-NC layer) which acts as an electric energy source in NCG device, the piezoelectric nanopowders($BaTiO_3$) were dispersed in polydimethylsiloxane(PDMS). Sequently, the p-NC layer was inserted in two dielectric layer of PDMS; these layers enabled the NCG device flexibility as well as durability prohibiting detachment(exfoliation) for significantly mechanical bending motions. The fabricated NCG device shows average maximum open circuit voltage of 6.2 V and average maximum current signals of 300 nA at 20 wt% composition of $BaTiO_3$ nanostructures in p-NC layer. Finally, the flexible energy harvester generates stable output signals at any rate of frequency which were used to operate LCD device without any external energy supply.

• 제어로봇시스템학회:학술대회논문집
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• 1991.10a
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• pp.809-814
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• 1991

기존의 CNC Controller를 재구성하면 제어성과 절삭성의 재고에 큰 효과를 낼 수 있다. 현실적으로 시스템의 재구성은, 가) 시스템의 재구성으로 2축 CNC 기계를 다축으로 전환시킬 수 있고, 나) 모터의 직접제어에 의한 G-code 작성과정의 생략이 가능하며, 다) NC 동작의 제어가 소프트웨어로 (C 언어) 이루어 지기 때문에 사용자환경에 맞도록 고객화가 가능한 강점이 있다. 나아가서는 형상의 정의에서 NC 기계동작의 제어 및 온라인 모니터링에 이르는 전과정을 소프트웨어로 일식화 시킬 수 있는 통합 NC 시스템의 구현이 가능하다. 본 논문에서는 이러한 목적으로 연구되고 있는 INCS(Integrated NC System)의 개발현황을 소개한다. INCS는 PC-286, NC Controller, Drive Amplifier, Sensing Device의 하드웨어 시스템과 CAD, CAM 및 CNC 기능을 수행하는 소프트웨어 시스템으로 구성되어 있다. 그래픽 시뮬레이션 및 실제 절삭을 통하여 개발된 방식의 유효성과 효율성을 설명한다.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.22 no.5
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• pp.852-858
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• 2013

In numerical control (NC) machining, a machining error in equipment generally occurs for a variety of reasons. If there is a change in direction in the NC code, the characteristics of the automatic acceleration or deceleration function cause an overlap of each axis of the acceleration and deceleration zones, which in turn causes a shift in the actual processing path. Many studies have been conducted for error calibration of the edge as caused by automatic acceleration or deceleration in NC machining. This paper describes a geometric interpretation of the shape and processing characteristics of the operating NC device. The paper then describes a way to determine a feedrate that achieves the desired tolerance by using linear and parabolic profiles. Experiments were conducted by the validate equations using a three-axis NC machine. The results show that the machining errors were smaller than the machine resolution. The results also clearly demonstrate that the NC machine with the developed system can successfully predict machining errors induced with a change in direction.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.418-421
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• 2001

Press brake is used as bending and forming sheet metal in vehicle and many kind of industry. This paper deals with development of NC press brake based on high precision positioning device and software, which can be operated on personal computer. In this system, positioning device is used for controlling bending angle and operated by the developed software, which is database from material property, width and thickness of material. This study will make distribution in development of computer aided press brake.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2001.10a
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• pp.214-219
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• 2001

One of the major limitations of productivity and quality in metal cutting is the machining accuracy of machine tools. The machining accuracy is affected by geometric errors, thermally-induced errors, and the deterioration of the machine tools. Geometric and thermal errors of machine tools should be measured and compensated to manufacture high quality products. In metal cutting, the machining accuracy is more affected by thermal errors than by geometric errors. In this study, the compensation device and temperature-based algorithm have been presented in order to compensate thermal error of machine tools under the real-time. The thermal error is modeled by means of angularity errors of a column and thermal drift error of the spindle unit which are measured by the touch probe unit with a star type styluses, a designed spherical ball artifact, and five gap sensors. In order to compensate thermal characteristics under several operating conditions, experiments performed with five gap sensors and manufactured compensation device on the horizontal machining center.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2002.10a
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• pp.417-422
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• 2002

One of the major limitations of productivity and quality in metal cutting is the machining accuracy of machine tools. The machining accuracy is affected by geometric errors, thermally-induced errors, and the deterioration of the machine tools. Geometric and thermal errors of machine tools should be measured and compensated to manufacture high quality products. In metal cutting, the machining accuracy is more affected by thermal errors than by geometric errors. In this study, the compensation device and temperature-based algorithm have been implemented on the machining center in order to compensate thermal error of machine tools under the real-time. The thermal errors are predicted using the neural network and multi-regression modeling methods. In order to compensate thermal characteristics under several operating conditions, experiments performed with five gap sensors and manufactured compensation device on the horizontal machining center.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.5 s.236
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• pp.770-776
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• 2005

The gains fur NC controller parameter are fixed when the controller is combined with a machine. However, the characteristics of controller could be changed as it has being used by the machine or other environmental conditions. Those result in that the tool positioning accuracy is influenced. The loading torque in servo motor influences on the tool positioning accuracy and it is controlled by the parameter gains. It is required to analyze the torque variation with angular positioning accuracy of the servo motor. This study focus on a measuring method and device for verifying angular positioning accuracy of NC servo motor. We used a high resolution An converter for acquiring analogue signal of rotary encoder in servo motor. The positional accuracy for a nominal tool path, which is generated by the combination of axial movements (X,Y,Z), is analyzed with the servo motor torque. The current variation signal is acquired at the power line using a hall sensor and converted to the loading torque of servo motor. The method of measurement and analysis proposed in this study will be used for determining the gains of parameter in NC controller. This gain tuning is also necessary when the controller is set up at a machine.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.2
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• pp.156-163
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• 2008

We proposed a new $p^+/n^+$ gate locally-separated-channel (LSC) bulk FinFET which has vertically formed oxide region in the center of fin body, and device characteristics were optimized and compared with that of normal channel (NC) FinFET. Key device characteristics were investigated by changing length of $n^+$ poly-Si gate ($L_s$), the material filling the trench, and the width and length of the trench at a given gate length ($L_g$). Using 3-dimensional simulations, we confirmed that short-channel effects were properly suppressed although the fin width was the same as that of NC device. The LSC device having the trench non-overlapped with the source/drain diffusion region showed excellent $I_{off}$ suitable for sub-50 nm DRAM cell transistors. Design of the LSC devices were performed to get reasonable $L_s/L_g$ and channel fin width ($W_{cfin}$) at given $L_gs$ of 30 nm, 40 nm, and 50 nm.

• Current Photovoltaic Research
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• v.2 no.4
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• pp.152-156
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• 2014

We report hybrid solar cells fabricated with polymer/fullerene bulk heterojunction layers that contain inorganic nanocrystals synthesized by in-situ reaction in the presence of polymer chains. The inorganic (cadmium sulfide) nanocrystal ($CdS_{NC}$) was generated by the reaction of cadmium acetate and sulfur by varying the reaction time up to 30 min. The synthesized $CdS_{NC}$ showed a rectangular flake shape, while the size of $CdS_{NC}$ reached ca. 150 nm when the reaction time was 10 min. The performance of hybrid solar cells with $CdS_{NC}$ synthesized for 10 min was better than that of a control device, whereas poor performances were measured for other hybrid solar cells with $CdS_{NC}$ synthesized for more than 10 min.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.254-255
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• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.