• Journal of the Korean Academy of Child and Adolescent Psychiatry
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• 제12권2호
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• pp.179-191
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• 2001

연구목적：신생아의 행동 특성과 DAT1, DRD2, DRD3 및 DRD4 유전자 다형성 사이에 연관이 있는지 평가하였다. 방 법：2000년 4월 17일부터 2000년 6월 17일까지 출생한 정상 신생아 114명을 대상으로 하였다. 신생아 행동 평가는 Neonatal Behavioral Assessment Scale(NBAS)을 이용하여 생후 약 18시간에 평가하였으며, 출산시 제대혈액을 채취하여 DAT1, DRD2, DRD3 및 DRD4 유전자 다형성을 검사하였다. DAT1, DRD2, DRD3 및 DRD4 유전자의 유전자형에 따라서 집단 사이에 NBAS 7개 항목 점수를 비교하였다. 결 과：DAT1 유전자는 10/10 유전자형 집단과 비교해서 기타 유전자형 집단이 사회성-상호작용, 상태 조직력 및 상태 조절 능력 항목에서 유의하게 점수가 높았다. DRD2 유전자 Ser311/Cys311 유전자형은 Ser/Ser 유전자형 집단과 기타 유전자형 집단 사이에 NBAS 항목 점수에 유의한 차이가 없었다. DRD2 유전자는 TaqI A 및 TaqI B 유전자형에 의한 집단 사이에 NBAS 항목 점수에 유의한 차이가 없었다. DRD3 유전자는 유전자형에 의한 집단 사이에 NBAS 항목 점수에 유의한 차이가 없었다. DRD4 유전자 promoter 유전자형에 의한 집단 사이에 NBAS 항목 점수에 유의한 차이가 없었다. DRD4 유전자 반복배열이 긴 유전자형 집단은 짧은 유전자형 집단보다 습관화 항목 점수가 유의하게 높았다. 결 론：이러한 성적은 DAT1 및 DRD4 유전자 반복배열 다형성이 신생아 행동 특성에 영향을 미치는 유전적 기전일 가능성을 시사한다.

• 한국정보통신학회논문지
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• 제26권5호
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• pp.793-801
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• 2022

블루투스 이어폰과 같은 대부분의 블루투스 장치는 무선이라는 편리성으로 다양하게 사용되지만 소형 무선기기라는 특성으로 자주 분실되는 단점이 있다. 그러나 대부분의 블루투스 장치에서는 합법적인 소유자에 대한 인증 기능 제공이 미흡하며, 분실된 블루투스 장치를 습득한 제 3자는 해당 기기를 손쉽게 자신의 스마트기기 등에 연결하여 사용할 수 있다. 본 논문에서는 분실이 잦은 블루투스 장치에서 NFT를 이용하여 합법적인 소유자를 인증하는 NBAS(NFT-based Bluetooth Device Authentication System)에 대해서 제안하였다. NBAS는 탈중앙화된 네트워크인 이더리움 블록체인을 활용하여 이더리움상에 디지털 지갑을 생성하고, 디지털 지갑에 블루투스 장치의 MAC 주소를 이용하여 NFT를 생성하고 보관한다. 지갑의 소유자는 개인키를 사용하여 NFT의 소유를 증명함으로써 블루투스 장치의 합법적인 소유자임을 인증하게 된다. NBAS는 평균 10.25sec의 초기 페어링 시간을 보였으며 재연결 시간은 0.007sec로 기존 방식과 비슷하며, 미승인 사용자에 대한 페어링 거절 시간은 평균 1.58sec로 측정되었다. 따라서 제안하는 NBAS는 미승인된 블루투스 장치의 연결을 방지하여 기존의 보안성이 약한 블루투스 인증 방식을 효과적으로 개선함을 보여준다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.157-157
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• 2015

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}g/m^2day$. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2day$) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study NBAS process was introduced to deposit enhanced film density single gas barrier layer with a low WVTR. Fig. 1. shows a schematic illustration of the NBAS apparatus. The NBAS process was used for the $Al_2O_3$ nano-crystal structure films deposition, as shown in Fig. 1. The NBAS system is based on the conventional RF magnetron sputtering and it has the electron cyclotron resonance (ECR) plasma source and metal reflector. $Ar^+$ ion in the ECR plasma can be accelerated into the plasma sheath between the plasma and metal reflector, which are then neutralized mainly by Auger neutralization. The neutral beam energy is controlled by the metal reflector bias. The controllable neutral beam energy can continuously change crystalline structures from an amorphous phase to nanocrystal phase of various grain sizes. The $Al_2O_3$ films can be high film density by controllable Auger neutral beam energy. we developed $Al_2O_3$ high dense barrier layer using NBAS process. We can verified that NBAS process effect can lead to formation of high density nano-crystal structure barrier layer. As a result, Fig. 2. shows that the NBAS processed $Al_2O_3$ high dense barrier layer shows excellent WVTR property as a under $2{\times}10^{-5}g/m^2day$ in the single barrier layer of 100nm thickness. Therefore, the NBAS processed $Al_2O_3$ high dense barrier layer is very suitable in the high efficiency OLED application.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.251-252
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• 2012

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low Water Vapor Transition Rate (WVTR) of $1{\times}10^{-6}g/m^2$/day. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2$/day) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study, we developed an $Al_2O_3$ nano-crystal structure single gas barrier layer using a Neutral Beam Assisted Sputtering (NBAS) process. The NBAS system is based on the conventional RF magnetron sputtering and neutral beam source. The neutral beam source consists of an electron cyclotron Resonance (ECR) plasma source and metal reflector. The Ar+ ions in the ECR plasma are accelerated in the plasma sheath between the plasma and reflector, which are then neutralized by Auger neutralization. The neutral beam energies were possible to estimate indirectly through previous experiments and binary collision model. The accelerating potential is the sum of the plasma potential and reflector bias. In previous experiments, while adjusting the reflector bias, changes in the plasma density and the plasma potential were not observed. The neutral beam energy is controlled by the metal reflector bias. The NBAS process can continuously change crystalline structures from an amorphous phase to nano-crystal phase of various grain sizes within a single inorganic thin film. These NBAS process effects can lead to the formation of a nano-crystal structure barrier layer which effectively limits gas diffusion through the pathways between grain boundaries. Our results verify the nano-crystal structure of the NBAS processed $Al_2O_3$ single gas barrier layer through dielectric constant measurement, break down field measurement, and TEM analysis. Finally, the WVTR of $Al_2O_3$ nano-crystal structure single gas barrier layer was measured to be under $5{\times}10^{-6}g/m^2$/day therefore we can confirm that NBAS processed $Al_2O_3$ nano-crystal structure single gas barrier layer is suitable for OLED application.

• Child Health Nursing Research
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• 제7권3호
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• pp.298-307
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• 2001

This study assessed behavioral characteristics of 73 normal neonates in Daegu area using the NBAS. Being one of few studies on this topic, the study is to document and to accumulate data on the neonatal behaviors of Korean babies. Overall scores were at moderate levels in 6 behavioral clusters including Habituation, Social Interactive, Motor System, State Organization, and State Regulation. Autonomic Stability showed relative stableness. Scores of Orientation were higher in neonates of working mothers and rural mothers. Neonates of mothers with no abortion history have higher scores in Motor System and State Organization. Score of State Organization was higher in neonates of mothers with no habitual use of amenity during their pregnancy. Scores of Habituation and State Organization, as well as scores of Motor System with State Organization, State Regulation and Autonomic Stability were positively correlated. Scores of Habituation and State Organization indicate that babies are agreeable and even tameable that is advantageous for attachment to caregiver.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.465-465
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• 2012

In this study, we developed an Al2O3 nanolaminated single gas barrier layer using a Neutral Beam Assisted Sputtering (NBAS) process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nanocrystal phase with various grain sizes and lead to the formation of a nanolaminated structure in the single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the nanolaminated Al2O3 thin films by NBAS process have improved more than 40% compared with that of conventional Al2O3 layers by the RF magnetron sputtering process under the same sputtering conditions.

• Child Health Nursing Research
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• 제9권1호
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• pp.74-84
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• 2003

This study was designed to investigate effects of maternal education using Brazelton Neonatal Behavioral Assessment Scale(the following will be marked as NBAS) on the mother-infant interaction and infant behavior. The subjects of this study consisted of 48 pairs of normal mother and infant, 24 pairs for intervention group and 24 pairs for control group. The subjects were recruited from two general hospitals, and an OBGY clinic located in J city. The data were collected from July 30, 2001 to October 6, 2001. Prior to investigation and data collection, following operational hypotheses were set up in order to compare the investigative data against these operational hypotheses(H). H1: Intervention group will higher mother-infant interaction score than control group. H2: Intervention group infants will higher overall performance in infant behavior test score than control group infants. The results of this study were summarized as follows: 1. The mother-infant interaction score was 59.79 points in intervention group and 53.91 points in control group. The mother-infant interaction score of intervention group showed significant difference than control group. Therefore, hypothesis 1 was supported. 2. The infant behavior score of intervention group was significantly higher than control group, but partially. Therefore, hypothesis 2 was partially supported. 1) The social interaction(orientation) score was 46.58 points in intervention group and 43.50 points in control group. The orientation score of intervention group showed significant difference than control group. 2) The state regulation score was 26.79 points in intervention group and 25.33 points in control group. The state regulation score of intervention group showed significant difference than control group. In conclusion, present work demonstrated that maternal education using NBAS is an effective intervention method for promotion of mother-infant interaction and of infant behavior development. Author believes that many inexperience young mother may find NBAS-based maternal education beneficial for their nursing babies, therefore NBAS-based intervention is recommended to be adopted routinely as an integral part of neonatal nursing strategies.

• Neonatal Medicine
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• 제17권2호
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• pp.207-216
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• 2010

목적: 본 연구의 목적은 미숙아에게 조기 중재 프로그램을 시행할 때 운동 발달과 성장에 미치는 효과와 발달 평가 도구(NBAS, HNNE)의 유용성을 조사하고자 하였다. 방법: 부산성모병원에서 태어난 42명의 미숙아와 부산성모병원과 좋은문화병원에서 태어난 20명의 만삭아를 대상으로 하였다. 조기 중재 프로그램과 발달 평가는 신생아 중환자실 물리치료사에 의해 시행되었다. 자료는 전향적으로 수집되었다. 결과: 재태주령 34주 미만의 미숙아 중재 그룹에서 인공호흡기와 폐표면활성제 사용, 심한 기관지 폐 이형성증, 뇌실 내 출혈, 수술을 시행한 동맥관 개존증이 재태주령 34주 이상 37주 미만 미숙아 중재 그룹보다 많았다. 미숙아 중재 그룹은 1번째, 2번째, 3번째 평가에서 NBAS와 HNNE 평균 점수의 향상을 보였다 (P=0.000). 미숙아 중재 그룹은 재태주령 40주 평가에서 만삭아 대조 그룹에 비해 더 높은 NBAS와 HNNE 평균 점수를 보였다(P=0.000). 재태주령 34주 이상 37주 미만 미숙아 중재 그룹은 1번째와 3번째 평가 사이에 체중과 두위의 더 많은 성장을 보였다(P<0.05). 미숙아 중재 그룹은 중재와 평가 중 무호흡, 서맥, 후기 패혈증이 없었다. 결론: 조기 중재 프로그램은 미숙아의 운동 발달과 성장에 양호한 영향을 미쳤다. 발달 평가 도구(NBAS, HNNE)는 미숙아의 운동 발달을 평가하는 안전하고 유용한 도구로 사용될 수 있다고 생각한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• 부모자녀건강학회지
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• 제1권
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• pp.20-23
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• 1998