• Language and Information
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• v.19 no.2
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• pp.127-153
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• 2015

Negative expressions have their semantic function of classical negation as a pure reverser of truth-values. They also have various kin and foes of their pragmatic functions such as association of bad feelings (Russell 1948), emphasis/attenuation by negative polarity items, sarcasm, and metalinguistic negation (MN). This paper explores how MN and descriptive negation (DN) differ and whether the difference creates pragmatic ambiguity (Horn 1987) or reflects merely contextual variations of one logical negation (Carston 1996). To test the debate, this paper treats certain degree modifiers licensed exclusively by MN as in Mia-ka POTHONG/Yekan yeppu-n key an-i-a [external neg] (vs. modifier NPIs like cenhye 'at all', licensed only by DN) and contrasts them with bad utterances of the MN modifiers in [short form neg] sentences (not for MN) such as Mia-ka POTHONG an yeppu-e. The ERP results of the well-formed vs. ill-formed conditions evoked the N400 at Cz in written stimuli and the N400 near the center on both hemispheres in spoken stimuli. The results suggest that the anomalies are meaning-related and tend to support the pragmatic ambiguity.

• Journal of IKEEE
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• v.24 no.2
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• pp.604-609
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• 2020

We investigated the influence of rapid thermal annealing on aluminum nitride (AlN) thin film Schottky barrier diodes (SBDs) manufactured structures deposited on a 4H-silicon carbide (SiC) wafer using radio frequency sputtering. The Ni/AlN/4H-SiC devices annealed at 400℃ exhibited Schottky barrier diode (SBDs) properties with an on/off current ratio that was approximately 10 times higher than that of the as-deposited device structures and the devices annealed at 600℃ as measured at room temperature. Auger electron spectroscopy (AES) measurements revealed that atomic oxygen concentrations in the annealed AlN devices at 400℃, is ascribed to the improvement in on/off ratio and the reduction of on-resistance. Additionally, we investigated the electrical characteristics of the AlN/SiC SBD structures depending on the frequency variation of sound waves.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.387-387
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• 1998

This paper reports on a thermodynamic analysis for the GaN thick film growth by vapor phaseepitaxy method. The thermodynamic calculation was performed using a chemical stoichiometric algorism. Thesimulation variables include the growth temperature in a range 400~1500 K, the gas ratios $(GaCl_3)/(GaCl_3+NH_3)$and $(N_2)/(GaCl_3+NH_3)$. The theoretical calculation predicts that the growth temperature of GaN be in thelower range of 450~750 K than the experimental results. The difference in the growth temperature betweenthe simulation and the experiments indicates that the vapor phase epitaxy of GaN is kinetically limited,presumably, due to the high activation energy of thin film growth.

• KSBB Journal
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• v.20 no.2 s.91
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• pp.116-122
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• 2005

The feasibility of using bacterial cultures with the ultimate aim for the marine environmental clean-up was explored. The present study reports on the bacterial elimination of nitrogens and phosphorus by strains CK-10 and CK-13 isolated from shrimp farming pond. The strains were identified as genus Bacillus on the basis of BIOLOG test, and designated as Bacillus sp. CK-10 and Bacillus sp. CK-13, respectively. Removal of nitrogens $(NH_4^+,\;NO_2^-,\;or\;NO_3^-)$ or phosphorus $(PO_4^{-3})$ as single N or P source was studied with single cultures under aerobic conditions. Complete elimination of all nitrogens in the concentration range of $100-400{\mu}M$ was achieved in single cultures as well as co-cultures within the given incubation period. Similar results were obtained from the test cultures containing $125-599{\mu}M\;PO_4^{3-}$. Simultaneous removal of all N/P was monitored in the co-cultures. As the results, $400{\mu}M\;NH_4^+\;and\;NO_2^-$ were eliminated within 12hrs and $400{\mu}M\;NO_3^-\;and\;500{\mu}M\;PO_4^{-3}$ were completely disappeared within 36 hrs from the media. The work demonstrated that co-cultures improved the concurrent removal of N/P from the media.

• Journal of Biomedical Engineering Research
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• v.38 no.4
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• pp.175-182
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• 2017

Microcurrent electrical stimulation(MES) has been used to accelerate recovery of atrophied skeletal muscle. However, convincing stimulation parameters for suppressing muscle atrophy due to injured sciatic nerve remains unclear. The objective of this study was to investigate the effective intensity of MES on restraining muscle atrophy with rat model underwent sciatic nerve injury(SNI). Twenty-5-week-old Sprague Dawley male rats were equally assigned to five groups : Control group(Control, CON, n = 4), Denervation group(Denervation, D, n = 4), Denervation with MES of $22{\mu}A$ group(Denervation + $22{\mu}A$, D+22, n = 4), Denervation with MES of $100{\mu}A$ group (Denervation + $100{\mu}A$, D+100 n = 4), Denervation with MES of $400{\mu}A$ group(Denervation + $400{\mu}A$, D+400, n = 4). To induce muscle atrophy, all rats in the D, D+22, D+100, and D+400 groups, were subjected to sciatic nerve injury on their right hindlimb and allowed to have 1 week of resting period. Following this period, rats underwent daily MES(60 min/ a day, 5times/1week) for 4 weeks. After that, we investigate morphological changes in muscle volume by using in vivo micro-computed tomography at week 0, 1, 3 and 5. After 5 weeks, the muscle volume had the highest value in D+400 group, and also noticeably increased in D+100 group compared to it in D group. The results of this study imply that MES with current intensities between $100-400{\mu}A$ can suppress muscle atrophy effectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.388-395
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• 1998

This paper reports on a thermodynamic analysis for the GaN thick film growth by vapor phase epitaxy method. The thermodynamic calculation was performed using a chemical stoichiometric algorism. The simulation variables include the growth temperature in a range 400~1500 K, the gas ratios $(GaCl_3)/(GaCl_3+NH_3)$ and $(N_2)/(GaCl_3+NH_3)$. The theoretical calculation predicts that the growth temperature of GaN be in the lower range of 450~750 K than the experimental results. The difference in the growth temperature between the simulation and the experiments indicates that the vapor phase epitaxy of GaN is kinetically limited, presumably, due to the high activation energy of thin film growth.

• Journal of the Korean institute of surface engineering
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• v.53 no.2
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• pp.43-52
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• 2020

Various aging treatments were conducted on AISI 630 martensitic precipitation hardening stainless steel in order to optimize aging condition. Aging treatment was carried out in the vacuum chamber of Ar gas with changing aging temperature from 380℃ to 430℃ and aging time from 2h to 8h at 400℃. After obtaining the optimized aging condition, several nitrocarburizing treatments were done without and with the aging treatment. Nitrocarburizing was performed on the samples with a gas mixture of H₂, N₂ and CH₄ for 15 h at vacuum pressure of 4.0 Torr and discharge voltage of 400V. The corrosion resistance was improved noticeably by combined process of aging and nitrocarburizing treatment, which is attributed to higher chromium and nitrogen content in the passive layer, as confirmed by XPS analysis. The optimized condition is finalized as, 4h aging at 400℃ and then subsequent nitrocarburizing at 400℃ with 25% nitrogen and 4% methane gas for 15h at vacuum pressure of 4.0 Torr and discharge voltage of 400V, resulting in the surface hardness of around 1300 HV_0.05 and α'_N layer thickness of around 11 ㎛ respectively.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1434-1436
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• 2002

The 400KN suspended insulator was fabricated with feldspar, quartz, clay and $Al_2O_3$ wt% for extra high voltage. These materials were grinded with ball milling for 25 hours after mixing them. The grinded materials were sintered at $1300^{\circ}C$ for 50 minutes in the tunnel kiln after mading with jiggering method. The sintered density of specimen was reached at 97% in comparison with that of theory. The specimen had the characteristic of temperature rise with the increase of electrical losses. Also, the flexural strength and the fracture toughness of sintered parts respectively were 1658 kg/$cm^2$ and 2.3 $MPa{\cdot}m^{1/2}$.

• ALGAE
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• v.29 no.1
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• pp.27-34
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• 2014

Availability of nutrients is known to influence marine primary production; and it is of general interest to see how nutrient limitation mediates phytoplankton responses to solar ultraviolet radiation (UVR, 280-400 nm). The red tide diatom Skeletonema costatum was cultured under nitrate (N)-limited and N-replete conditions and exposed to different solar irradiation treatments with or without UV-A (315-400 nm) and UV-B (280-315 nm) radiation. Its photochemical quantum yield decreased by 13.6% in N-limited cells as compared to that in N-replete ones under photosynthetically active radiation (PAR)-alone treatment, and the presence of UV-A or UV-B decreased the yield further by 2.8 and 3.1%, respectively. The non-photochemical quenching (NPQ), when the cells were exposed to stressful light condition, was higher in N-limited than in N-replete grown cells by 180% under PAR alone, by 204% under PAR + UV-A and by 76% under PAR + UV-A + UV-B treatments. Our results indicate that the N limitation exacerbates the UVR effects on the S. costatum photosynthetic performance and stimulate its NPQ.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1014-1017
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• 2001

In recent years, The tantalum nitride(TaN) thin-film has been developed for the electronic resistor and capacitor. In this papers, The effect of thermal annealing in the temperature range of 300∼700$^{\circ}C$ on the sheet resistor properties and microistructure of tantalum nitride(TaN) thin-film deposited by RF sputtering was studied. XRD(X-ray diffractometer) and AFM were used to observe electrical properties and microstructrue of the TaN film and sheet resistance. The TCR properties of the TaN films were discussed in terms of annealing temperature, ratio of nitrogen, crystallization and thin films surface morphology due to annealing temperature. The leakage current of the TaN thin film annealed 400 $^{\circ}C$ was stabilized in the study. How its was found that the sheet resistance in the polycrystalline TaN thin film decreased with increasing the annealing temperature above 600 $^{\circ}C$ after sudden peak upen 400 $^{\circ}C$.