• Bulletin of the Korean Chemical Society
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• v.26 no.1
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• pp.131-135
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• 2005

Gallium nitride (GaN) powders and nanowires were prepared by using tris(N,N-dimethyldithiocarbamato)gallium(III) (Ga(DmDTC)$_3$) and tris(N,N-diethyldithiocarbamato)gallium(III) (Ga(DeDTC)$_3$) as new precursors. The GaN powders were obtained by reaction of the complexes with ammonia in the temperature ranging from 500 to 1100 ${^{\circ}C}$. The process of conversion of the complexes to GaN was monitored by their weight loss, XRD, and $^{71}$Ga magic-angle spinning (MAS) NMR spectroscopy. Most likely the complexes decompose to $\gamma$ -Ga$_2$S$_3$ and then turn into GaN via amorphous gallium thionitrides (GaS$_x$N$_y$). The reactivity of Ga(DmDTC)$_3$ with ammonia was a little higher than that of Ga(DeDTC)$_3$. Room-temperature photoluminescence spectra of asprepared GaN powders exhibited the band-edge emission of GaN at 363 nm. GaN nanowires were obtained by nitridation of as-ground $\gamma$ -Ga$_2$S$_3$ powders to GaN powders, followed by sublimation without using templates or catalysts.

• The KIPS Transactions:PartA
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• v.14A no.6
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• pp.327-332
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• 2007

In this paper, we will analysis embedding between $2^{2n-k}{\times}2^k$ torus and interconnection networks HFN(n,n), HCN(n,n). First, we will prove that $2^{2n-k}{\times}2^k$ torus can be embedded into HFN(n,n) with dilation 3, congestion 4 and the average dilation is less than 2. And we will show that $2^{2n-k}{\times}2^k$ torus can be embedded into HCN(n,n) with dilation 3 and the average dilation is less than 2. Also, we will prove that interconnection networks HFN(n,n) and HCN(n,n) can be embedded into $2^{2n-k}{\times}2^k$ torus with dilation O(n). These results mean so many developed algorithms in torus can be used efficiently in HFN(n,n) and HCN(n,n).

• The KIPS Transactions:PartA
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• v.11A no.7 s.91
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• pp.571-576
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• 2004

In this paper, by using Lagrange polynomial interpolation with a trick such that for $f(x)^{3}$ we shall use $f(x_i)^{3}I_i(x)^{3}$ instead of $I(x)^{3}$ where $I{x}{\;}={\;}\sum_{i}^{f}(x_i)I_i(x)$. We show the convergence and stability and calculate errors. These errors are approximately less than $C(\frac{1}{N})^{N-1} hN(N-1)(\frac{N}{2})^{N-1} /(\frac{N}{2})!$ where N is a polynomial degree.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.387-387
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• 1998

This paper reports on a thermodynamic analysis for the GaN thick film growth by vapor phaseepitaxy method. The thermodynamic calculation was performed using a chemical stoichiometric algorism. Thesimulation variables include the growth temperature in a range 400~1500 K, the gas ratios $(GaCl_3)/(GaCl_3+NH_3)$and $(N_2)/(GaCl_3+NH_3)$. The theoretical calculation predicts that the growth temperature of GaN be in thelower range of 450~750 K than the experimental results. The difference in the growth temperature betweenthe simulation and the experiments indicates that the vapor phase epitaxy of GaN is kinetically limited,presumably, due to the high activation energy of thin film growth.

• Journal of the Korean Ceramic Society
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• v.38 no.1
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• pp.22-27
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• 2001

$\beta$-Si$_3$N$_4$종자입자 첨가가 소결조제로 Y-Mg-Si-Al-O-N계 oxynitride glass를 사용하여 일축가압 소결을 행한 SiC-Si$_3$N$_4$복합재료의 미세구조와 기계적 특성에 미치는 영향을 고찰하였다. 길게 자란 $\beta$-Si$_3$N$_4$입자들과 등방성의 $\beta$-SiC 입자들이 균일하게 분포된 미세구조를 얻었다. $\beta$-Si$_3$N$_4$종자입자 함량이 증가함에 따라 SiC-Si$_3$N$_4$복합재료의 강도와 파괴인성이 증가하였고, 이는 복합화에 기인하는 결함크기의 감소와 길게 자란 $\beta$-Si$_3$N$_4$입자에 의한 균열가교 및 균열회절 등에 기인하였다. SiC-70 wt% Si$_3$N$_4$복합재료의 대표적인 강도와 파괴인성은 각각 770 MPa과 6.2 MPa.m$^{1}$2/ 이었다.

• Journal of Veterinary Clinics
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• v.31 no.4
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• pp.293-297
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• 2014

Swine influenza is an acute respiratory disease prevalent in pig-growing areas worldwide. In total, 518 gilt and sow serum samples and 14 litters (66 samples) of aborted fetuses from 37 farms (average of 14 serum samples per farm) in Gyeongbuk Province were collected between September 2010 and May 2011. All samples were examined for antibodies to swine influenza virus (SIV) H1N1 and H3N2 using enzyme-linked immunosorbent assay (ELISA). The seropositive rates of gilt and sows were 59.8% (310/518) for SIV H1N1, 78.8% (408/518) for H3N2, and 55.6% (288/518) for both subtypes tested. The rate of aborted fetuses was 13.6% (9/66) for H1N1, 9.1% (6/66) for H3N2, and 9.1% for both subtypes. The seroprevalence for H1N1 in gilts and sows was 46.6% (69/148) and 65.1% (241/370), respectively, and that for H3N2 was 78.4% (116/148) and 78.9% (292/370), respectively.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2002.04a
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• pp.655-659
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• 2002

This study is performed to develop the Si$_3$N$_4$ based ceramic inserts. Si$_3$N$_4$with addition of SiC and A1$_2$O$_3$ is investigated to determine the possibility to be a new tool. The tool life of Si$_3$N$_4$ insert with more than 20wt% SiC is shorter than commercial Si$_3$N$_4$ insert during machining both heat treated SCM440 and gray cast iron. Even though SiC has higher hardness than Si$_3$N$_4$, its chemical affinity to the iron on high temperature may causes deteriorat ion of tool life. To the contrary, Si$_3$N$_4$insert with A1$_2$O$_3$ shows increase of tool life up to 300% compared to the commercial Si$_3$N$_4$insert. It may attribute to the high temperature stability of A1$_2$O$_3$. Further study will be focused on the optimization of ceramic inserts with the composition of Si$_3$N$_4$and A1$_2$O$_3$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.9
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• pp.681-685
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• 2012

We investigated the dry etching characteristics of TiN in $TiN/Al_2O_3$ gate stack using a inductively coupled plasma system. TiN thin film is etched by BCl3/He plasma. The etching parameters are the gas mixing ratio, the RF power, the DC-bias voltages and process pressures. The highest etch rate is in $BCl_3/He$ (25%:75%) plasma. The selectivity of TiN thin film to $Al_2O_3$ is pretty similar with $BCl_3/He$ plasma. The chemical reactions of the etched TiN thin films are investigated by X-ray photoelectron spectroscopy. The intensities of the Ti 2p and the N 1s peaks are modified by $BCl_3$ plasma. Intensity and binding energy of Ti and N could be changed due to a chemical reaction on the surface of TiN thin films. Also we investigated that the non-volatile byproducts such as $TiCl_x$ formed by chemical reaction with Cl radicals on the surface of TiN thin films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.44-47
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• 2012

The $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ multi layered structure was designed for the possible application of transparent electrodes in PDP (Plasma Display Panel). Multi layered film was deposited on a glass substrate at room temperature by DC/RF magnetron sputtering system and EMP (Essential Macleod Program) was adopted to optimize the optical characteristics of film. During the deposition process, the Ag layer in $TiO_2/Ag/TiO_2$ became heavily oxidized and the filter characteristic was degraded easily. In thus study, Si3N4 layer was used as a diffusion buffer layer between $TiO_2$ and Ag. in order to prevent the oxidation of Ag layer in $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ structure. It was confirmed that $Si_3N_4$ layer is one of candidate materials acting as diffusin barrier between $TiO_2/Ag/TiO_2$.

• Nutrition Research and Practice
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• v.15 no.2
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• pp.137-159
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• 2021

Long-chain (LC) n-3 polyunsaturated fatty acids (n-3 PUFAs), in particular docosahexaenoic acid (DHA) and eicosapentaenoic acid (EPA), are nutrients involved in many metabolic and physiological processes, and are referred to as n-3 LCPUFA. They have been extensively studied for their effects in human nutrition and health. This paper provides an overview on metabolism, sources, dietary intake, and status of n-3 LCPUFA. A summary of the dietary recommendations for n-3 LCPUFAs for different age groups as well as specific physiological conditions is provided. Evidence for n-3 LCPUFA in cardiovascular diseases, including new studies, is reviewed. Expert recommendations generally support a beneficial effect of n-3 LCPUFA on cardiovascular health and recommend a daily intake of 500 mg as DHA and EPA, or 1-2 servings of fish per week. The role of n-3 LCPUFA on brain health, in particular neurodegenerative disorders and depression, is reviewed. The evidence for beneficial effects of n-3 LCPUFA on neurodegenerative disorders is non-conclusive despite mechanistic support and observational data. Hence, no definite n-3 LCPUFA expert recommendations are made. Data for the beneficial effect of n-3 LCPUFA on depression are generally compelling. Expert recommendations have been established: 200-300 mg/day for depression; up to 1-2 g/day for major depressive disorder. Recent studies support a beneficial role of n-3 LCPUFAs in reducing the risk for premature birth, with a daily intake of 600-800 mg of DHA during pregnancy. Finally, international experts recently reviewed the scientific evidence on DHA and arachidonic acid (ARA) in infant nutrition and concluded that the totality of data support that infant and follow-on formulas should provide both DHA and ARA at levels similar to those in breast milk. In conclusion, the available scientific data support that dietary recommendations for n-3 LCPUFA should be established for the general population and for subjects with specific physiological conditions.