• 공업화학
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• 제4권3호
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• pp.569-575
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• 1993

담지된 백금촉매에 주석의 첨가는 포화탄화수소의 탈수소고리화 반응에 대한 촉매의 활성 및 안정도의 현저한 증가를 가져왔다. n-octane의 탈수소고리화 반응에서 0.75wt%의 Pt에 대해 주석의 몰비가 약 4일 때 가장 높은 촉매적 활성을 나타냈다. 또한 K의 첨가도 n-hexane의 탈수소고리화 반응에 대해 주석과 비슷한 효과를 나타내었다. n-octane의 전환반응의 경우에는, K의 첨가 효과가 적게 나타났다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 1999년도 추계학술발표회 초록집
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• pp.49-49
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• 1999

In this study, $Cl_2/BCI_3$ magnetized inductively coupled plasmas (MICP) were used to etch GaN and the effects of magnetic confinements of inductively coupled plasmas on the GaN etch characteristics were investigated as a function of $Cl_2/BCI_3$. Also, the effects of Kr addition to the magnetized $Cl_2/BCI_3$ plasmas on the GaN etch rates were investigated. The characteristics of the plasmas were estimated using a Langmuir probe and quadrupole ma~s spectrometry (QMS). Etched GaN profiles were observed using scanning electron microscopy (SEM). The small addition of $Cl_2/BCI_3$ (10-20%) in $Cl_2$ increased GaN etch rates for both with and without the magnetic confinements. The application of magnetic confinements to the $Cl_2/BCI_3$ inductively coupled plasmas (ICP) increased GaN etch rates and changed the $Cl_2/BCI_3$ gas composition of the peak GaN etch rate from 10% $BCI_3$ to 20% $BCI_3$. It also increased the etch selectivity over photoresist, while slightly reducing the selectivity over $Si0_2$. The application of the magnetic field significantly increased positive $BCI_2{\;}^+$ measured by QMS and total ion saturation current measured by the Langmuir probe. Other species such as CI, BCI, and CI+ were increased while species such as $BCl_2$ and $BCI_3$ were decreased with the application of the magnetic field. Therefore, it appears that the increase of GaN etch rate in our experiment is related to the increased dissociative ionization of $BCI_3$ by the application of the magnetic field. The addition of 10% Kr in an optimized $Cl_2/BCI_3$ condition (80% $Cl_2/$ 20% $BCI_3$) with the magnets increased the GaN etch rate about 60%. More anisotropic GaN etch profile was obtained with the application of the magnetic field and a vertical GaN etch profile could be obtained with the addition of 10% Kr in an optimized $Cl_2/BCI_3$ condition with the magnets.

• Bulletin of the Korean Chemical Society
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• 제12권3호
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• pp.301-303
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• 1991

The rate constants for the nucleophilic addition of thiophenol to $\alpha$, N-diphenylnitrone and it's derivatives (p-$OCH_3$, p-Cl, p-$NO_2$) were determined from pH 3.0 to 13.0 by UV spectrophotometry and rate equations which can be applied over a wide pH range were obtained. On the basis of rate equation, general base and substituent effect a plausible addition mechanism of thiophenol to ${\alpha}$, N-diphenylnitrone was proposed: At high pH, the addition of sulfide ion to carbon-nitrogen double bond was rate controlling, however, in acidic solution, reaction was proceeded by the addition of thiophenol molecule to carbon-nitrogen double bond after protonation at oxygen of ${\alpha}$, N-diphenylnitrone.

• 폴리머
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• 제39권2호
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• pp.300-310
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• 2015

본 연구에서는 나노 크기의 실리카 입자 표면을 1차 및 2차 아미노기를 각각 1개씩 가지는 실란 커플링제인 N-[3-(trimethoxysilyl)propyl]ethylenediamine(TPED)으로 개질한 후, 아미노기와 마이클 부가 반응이 가능한 acrylate기를 가지는 3-(acryloyloxy)-2-hydroxypropyl methacrylate(AHM)로 표면 개질하는 연구를 수행하였다. 반응온도, 투입량 및 반응시간과 같은 반응 조건들의 변화가 실리카 표면에 도입되는 methacrylate기의 양에 미치는 영향을 연구하였다. 순수 TPED와 순수 AHM을 $50^{\circ}C$에서 5시간 반응시킨 액체-액체 반응에서는 TPED 1분자 당 존재하는 3개의 아미노기(N-H)들 중 약 85%가 마이클 부가 반응하지만, TPED로 개질한 실리카 표면에 결합한 TPED의 3개의 아미노기는 약 30% 정도만 반응하여 반응성이 매우 낮아짐을 확인하였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2007년도 춘계학술발표회 초록집
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• pp.78-79
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• 2007

In this study, chemical dry characteristics of silicon nitride layers were investigated in the $F_2/N_2/Ar$ remote plasma. A toroidal-type remote plasma source was used for the generation of remote plasmas. The effects of additive $N_2$ gas on the etch rates of various silicon nitride layers deposited using different deposition techniques and precursors were investigated by varying the various process parameters, such as the $F_2$ flow rate, the addition $N_2$ flow rate and the substrate temperature. The etch rates of the various silicon nitride layers at the room temperature were initially increased and then decreased with the $N_2$ flow increased, which indicates an existence of the maximum etch rates. The etch rates of the silicon oxide layers were also significantly increased with the substrate temperature increased. In the present experiments the $F_2$ gas flow, addition $N_2$ flow rate and the substrate temperature were found to be the critical parameters in determining the etch rate of the silicon nitride layers

• 한국결정성장학회지
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• 제18권6호
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• pp.237-241
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• 2008

AlN 소결체를 제조함에 있어서 $Y_2O_3$를 소결 첨가제로 하여 일축 가압 소결법을 적용하여 소결 조제 첨가량의 변화와 소결 시간의 변화에 따른 소결 특성, 미세구조 및 열전도도 측성에 대하여 조사하였다. $Y_2O_3$의 첨가로 인하여 AlN의 치밀화가 첨가하지 않은 경우보다 증진됨을 확인할 수 있었으며, 결정립계 및 결정립계 삼중점에서 YAG 이차상을 형성함으로써 AlN 결정 격자 내의 산소 결함 농도를 낮춰 열전도도를 향상시킴을 알 수 있었다. 특히, 소결 시간을 증대함에 따라 결정립 성장 및 열전도도의 방해 요소인 YAG 이차상이 고온에서 휘발됨에 따라 열전도도가 크게 향상됨을 확인할 수 있었다.

• 상하수도학회지
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• 제13권2호
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• pp.34-40
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• 1999

Aerobic night-soil treatment effluent containing high concentration of ammonia nitrogen was treated to remove nitrogen using Bardenpho process with Methanol addition. The objective of this study was to investigate the feasibility of complete nitrogen removal at three different HRTs such as 6.25d, 5d, and 3.75d, respectively. At each HRT, the nitrogen removal efficiencies are 92%, 99% and 97% and the required amount of methanol are 3.05gMeOH/gN, 2.75gMeOH/gN, and 3.38gMeOH/gN, respectively. Specific nitrification rates are decreased proportional to HRT and are $0.022gNH_4^+-N/g\;MLVSS{\cdot}day$, $0.0332gNH_4^+-N/g\;MLVSS{\cdot}day$ and $0.051gNH_4^+-N/g\;MLVSS{\cdot}day$ and specific denitification rate are decreased proportional to HRT and are $0.0210g\;N/gMLVSS{\cdot}day$, $0.0330g\;N/gMLVSS{\cdot}day$ and $0.0525g\;N/gMLVSS{\cdot}day$, respectively.

• 대한화학회지
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• 제51권6호
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• pp.499-505
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• 2007

세자리 비스(이미노)알릴 (N,C,N-집게발) 리간드를 가진 단핵 Ni(II) 착물을 발표하고자 한다. 새로운 착물(2,6-(ArN=CH)2C6H3)NiBr (Ar=2,6-dimethylphenyl (1), 2,6-diisopropylphenyl (2))은 산화성 첨가반응에 의해 Ni(COD)2 (COD=1,5-cyclooctadiene)와 1,3-(ArN=CH)2C6H3Br (bis(N-Ar)-2-bromoisophthalaldimine: Ar=Ph-2,6-Me2, Ph-2,6-iPr2) 으로부터 높은 수율로 합성하였다. 리간드와 니켈 착물에 대한 개선된 합성경로에 대하여 설명하고자 한다. 니켈(II) 착물 1, 2는 적외선 분광학, 수소-핵자기공명, 그리고 원소분석에 의해 구조를 밝혔다. 합성한 니켈 착물을 촉매로 사용하여 에틸렌 중합반응을 시도하였으나 목적하는 에틸렌고분자는 얻어지지 않고 소량의 올리고머가 형성되었다. 본 연구에서 합성한 니켈 착물이 에틸렌고분자 촉매반응에 활성을 보이지 않는 이유는 아마도 집게발 착물의 높은 경직성과 리간드의 비치환성 때문에 반응에 필요한 적합한 조건을 제공하지 못 했다고 사료된다.

• 한국전기전자재료학회논문지
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• 제16권1호
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• pp.33-38
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• 2003

Highly homogeneous PZT powder was prepared by a partial oxalate method using chemicals of (Z $r_{0.53}$ $Ti_{0.47}$) $O_2$, Pb(N $o_3$)$_2$and (COOH)$_2$ㆍ2$H_2O$. N $b_2$ $O_{5}$ addition effect on microstructure and electrical properties of PZT ceramics was investigated. When the precursors were calcined at 71$0^{\circ}C$, a single perovskite phase was obtained. After sintering at 110$0^{\circ}C$, X-ray diffraction Patterns showed coexistence of rhombohedral and tetragonal phases regardless of the N $b_2$ $O_{5}$ content. As the content of N $b_2$ $O_{5}$ increased, grain size decreased but sintered density increased. The electromechanical coupling factor of kp and the piezoelectric constant of $d_{31}$ increased linearly with the content of N $b_2$ $O_{5}$, and those values reached 0.7 and -200, respectively, when 1.2 mol% of N $b_2$ $O_{5}$ is added. is added.ded.

• 한국세라믹학회지
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• 제45권2호
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• pp.94-98
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• 2008

Silicon nitride($Si_3N_4)$ is one of the most widely used structural ceramic materials. However silicon nitride is difficult to sinter because of its strong covalent bonding characteristics. In this study, $Si_3N_4$ ceramics were fabricated by spark plasma sintering process with $Y_2O_3$ and $Al_2O_3$ addition to improve the sinterability and the mechanical properties and their phase transformation behavior, microstructure and mechanical properties were evaluated. Fully densified $Si_3N_4$ ceramics could be obtained by spark plasma sintering process at a lower temperature than conventional sintering method. The formation of network microstructure was affected by the addition of $Al_2O_3$ because it could accelerate a to ${\alpha}$ to ${\beta}$ phase transformation of $Si_3N_4$. As a result, the mechanical properties depended on amounts of $Al_2O_3$ addition. The hardness value increased with increasing ${\alpha}$-phase fraction, but fracture toughness value increase with increasing ${\beta}$-phase fraction.