• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.8
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• pp.63-69
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• 2015

This paper presents the surface flashover characteristics to simulate the poor contact between an anode and a solid dielectric in a $N_2/O_2$ mixture gas (8/2) under a non-uniform field. The surface flashover voltage of the $N_2/O_2$ mixture gas revealed the irregular tendency that was not in accordance with the Paschen's law with an increasing gap of the poor contact. In addition, the insulation performance of the $N_2/O_2$ mixture gas at 0.6MPa was comparable to that of $SF_6$ gas of 0.1MPa based on the insulation performance on the poor contact. These results are able to apply the insulation design of eco-friendly gas insulation switchgear considering the internal faults.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.109-115
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• 2003

Quaternary Ti-Al-Si-N films were deposited on WC-Co substrates by a hybrid deposition system of arc ion plating (AIP) method for Ti-Al source and DC magnetron sputtering technique for Si incorporation. The synthesized Ti-Al-Si-N films were revealed to be composites of solid-solution (Ti, Al, Si)N crystallites and amorphous Si3N4 by instrumental analyses. The Si addition in Ti-Al-N films affected the refinement and uniform distribution of crystallites by percolation phenomenon of amorphous silicon nitride, similarly to Si effect in TiN film. As the Si content increased up to about 9 at.%, the hardness of Ti-Al-N film steeply increased from 30 GPa to about 50 GPa. The highest microhardness value (~50 GPa) was obtained from the Ti-Al-Si-N film haying the Si content of 9 at.%, the microstructure of which was characterized by a nanocomposite of nc-(Ti,Al,Si) N/a$-Si_3$$N_4$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.2
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• pp.250-254
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• 2003

A film bulk acoustic resonator (FBAR) device for 2 GHz radio frequency (RF) bandpass filter application is presented. This FBAR device consists of an aluminum nitride (AlN) film sandwiched between top(Al) and bottom(Au) electrodes and an acoustic multilayer reflector of a silicon dioxide/tungsten (SiO2/W). The A/N film deposited using a RF sputtering was observed to have small columnar grains with a strongly preferred orientation towards c axis. In addition to a high quality factor (4300), a large return loss of 37.19 dB was obtained.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2009.11a
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• pp.269-272
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• 2009

Catalytic decomposition of nitrous oxide was investigated experimentally. Two noble metal catalyst (Pt, Ir) were chosen to decompose nitrous oxide. Each catalyst was tested with different chamber pressure and preheating temperature. Ir decomposed $N_2O$ at lower temperature ($230^{\circ}C$) and suitable for $N_2O$ decomposition. In addition, the minimum required preheating temperature decreased as the chamber pressure increased. However, deactivation of Ir catalyst was observed during the experiments.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.11
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• pp.2016-2020
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• 2010

Indium-zinc-oxide (IZO) films were deposited at room temperature via RF sputtering with varying the flow rate of additive nitrogen gas ($N_2$). Thin film transistors (TFTs) with an inverted staggered configuration were fabricated by employing the various IZO films, such as $N_2$-added and pure (i.e., w/o $N_2$-added), as active channel layers. For all the deposited IZO films, effects of additive $N_2$ gas on their deposition rates, electrical resistivities, optical transmittances and bandgaps, and chemical structures were extensively investigated. Transfer characteristics of the IZO-based TFTs were measured and characterized in terms of the flow rate of additive $N_2$ gas. The experimental results indicated that the transistor action occurred when the $N_2$-added (with $N_2$ flow rate of 0.4-1.0 sccm) IZO films were used as the active layer, in contrast to the case of using the pure IZO film.

• Journal of Korea Society of Industrial Information Systems
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• v.17 no.3
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• pp.9-17
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• 2012

In this paper, we propose a SPN 256 bit block cipher so called XSB(eXtended SPN Block cipher) which has a symmetric structure in encryption and decryption. The proposed XSB is composed of the even numbers of N rounds where the first half of them, 1 to N/2-1 round, applies a pre-function and the last half of them, N/2+1 to N round, employs a post-function. Each round consists of a round key addition layer, a substiution layer, a byte exchange layer and a diffusion layer. And a symmetry layer is located in between the pre-function layer and the post-function layer. The symmetric layer is composed with a multiple simple bit slice involution S-Boxes. The bit slice involution S-Box symmetric layer increases difficult to attack cipher by Square attack, Boomerang attack, Impossible differentials cryptanalysis etc.

• The KIPS Transactions:PartA
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• v.11A no.5
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• pp.341-346
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• 2004

Recently A Hyper-Star Graph HS(m, k) has been introduced as a new interconnection network of new topology for parallel processing. Hyper-Star Graph has properties of hypercube and star graph, further improve the network cost of a hypercube with the same number of nodes. In this paper, we show that Hyper-Star Graph HS(m, k) is subgraph of hypercube. And we also show that regular graph, Hyper-Star Graph HS(2n, n) is node-symmetric by introduced mapping algorithm. In addition, we introduce an efficient one-to-all broadcasting scheme - takes 2n-1 times - in Hyper-Star Graph HS(2n, n) based on a spanning tree with minimum height.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.32 no.5
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• pp.765-777
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• 2022

The SABER algorithm, a PKE/KEM algorithm presented in NIST PQC Standardization Round 3, is an algorithm based on the Module-LWR problem among lattice-based problems and has a Meta-PKE structure. At this time, the secret information used in the encryption process is called a ephemeral key, and in this paper, the ephemeral key reuse attack using the Meta-PKE structure is described. For each parameter satisfying the security strengths required by NIST, we present a detailed analysis of the previous studies attacked using 4, 6, and 6 queries, and improve them, using only 3, 4, and 4 queries. In addition, we introduce how to reduce the computational complexity of recovering ephemeral keys with a single query from the brute-force complexity on the n-dimension lattice, 2^7.91×n, 2^10.51×n, 2^12.22×n to 2^4.91×n, 2^6.5×n, 2^6.22×n, for each parameter, and present the results and limitations.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.162-167
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• 1992

Tic and TiN layers were deposited on the stainless steel substrate by the reactive RF sputtering. Ar was used for sputtering gas and CzHz and Nz were used for reaction gas. Deposition rate increased linearly to the applied RF power, and decreased as the partial pressure ratio of sputter gas to reactive gas increased. The thin layers were stoichiometric at the partial pressure ratio of 0.03 for Tic and at partial pressure ratio of 0.05 for TiN. The morphologies and structures of the thin layers were investigated by AES, SEM and TEM. In addition, N+ ion was implanted to Tic and the resulting influence on the film and annealing effects were also examined.

• Journal of the Korean Vacuum Society
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• v.6 no.4
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• pp.314-320
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• 1997

A chemical reaction and electronic structure change at the interface between copper and titanium nitride were investigated by XPS. A thin Cu layer was deposited on a TiN substrate oxidized by exposure to air at room temperature. We observed the Ti(2p), O(1s), N(1s), Cu(2p) core-level, and Cu LMM Auger line spectra. With increasing of the thickness of Cu layer, these spectra do not show any changes in the line shape as well as in peak position. In addition, the valence band spectra in XPS do not show any changes, which indicates that Cu does not react with Ti, N, and O. This inreactivity of Cu might cause a poor adhesion between Cu and TiN.