• Journal of Ceramic Processing Research
• /
• v.13 no.spc1
• /
• pp.93-95
• /
• 2012

We report on the growth and characterization of the nano- and micro scale GaN structures selectively grown on the vertex of GaN stripes using the metal organic vapor phase epitaxy method and conventional photolithography technique. The triangular shaped nano- and micro GaN structures which have semi-polar {11-22} facets were formed only on the vertex of the lower GaN stripes. Crystalline defects reduction was observed by transmission electron microscopy for upper GaN stripes. We also have grown the InGaN/GaN multi-quantum well structures on the semi-polar facets of the upper GaN stripes. Cathodoluminescence images were taken at 366, 412 and 555 nm related to GaN band edge, InGaN/GaN layer and defects, respectively.

• Mycobiology
• /
• v.38 no.1
• /
• pp.1-6
• /
• 2010

63 strains of Aspergillus section Fumigati were isolated from 17 samples of arable soil in a central province of Korea. Based on the results of genotypic and phenotypic analyses, they were identified as Aspergillus fumigatus, A. lentulus, Neosartorya coreana, N. fennelliae, N. fischeri, N. glabra, N. hiratsukae, N. laciniosa, N. pseudofischeri, N. quadricincta, N. spinosa and N. udagawae. Among these, N. fennelliae, N. hiratsukae, N. quadricincta, and N. udagawae had not been previously recorded in Korea. The diversity of Aspergillus section Fumigati species from arable soil in Korea is also addressed.

• Journal of the Optical Society of Korea
• /
• v.17 no.1
• /
• pp.16-21
• /
• 2013

In this paper, we report the effect of GaN/graded-composition AlGaInN/GaN quantum barriers in active regions on the electrical and optical properties of GaN-based vertical light emitting diodes (VLEDs). By modifying the aluminum composition profile within the AlGaInN quantum barrier, we have achieved improvements in the output power and the internal quantum efficiency (IQE) as compared to VLEDs using conventional GaN barriers. The forward voltages at 350 mA were calculated to be 3.5 and 4.0 V for VLEDs with GaN/graded-composition AlGaInN/GaN barriers and GaN barriers, respectively. The light-output power and IQE of VLEDs with GaN/graded-composition AlGaInN/GaN barriers were also increased by 4.3% and 9.51%, respectively, as compared to those with GaN barriers.

• Korean Journal of Materials Research
• /
• v.9 no.1
• /
• pp.42-45
• /
• 1999

The room temperature optical transmission spectra of GaN /InGaN/GaN single quantum wells (SQW) and InGaN/GaN heterostructures grwon by low pressure metalorganic chemical vapor deposition have been measured. The dependence of the absorption edges of the GaN/InGaN/GaN SQW on the well width has been determined from the transmission spectra. The result shows that the absorption edge of GaN/InGaN/GaN SQW shifts towards lower energy as increasing the well width. The dependence of the absorption edges of the InGaN/GaN heterostructures on InN mole fraction has also been determined from the transmission spectra. The result is compared with calculated values obtained from Vegards's laws. Our result shows a good agreement with the calculated values.

• Journal of Microbiology and Biotechnology
• /
• v.28 no.2
• /
• pp.218-226
• /
• 2018

Nanometric Lactobacillus plantarum nF1 (nLp-nF1) is a biogenics consisting of dead L. plantarum cells pretreated with heat and a nanodispersion process. In this study, we investigated the immune-enhancing effects of nLp-nF1 in vivo and in vitro. To evaluate the immunostimulatory effects of nLp-nF1, mice immunosuppressed by cyclophosphamide (CPP) treatment were administered with nLp-nF1. As expected, CPP restricted the immune response of mice, whereas oral administration of nLp-nF1 significantly increased the total IgG in the serum, and cytokine production (interleukin-12 (IL-12) and tumor necrosis factor alpha (TNF-${\alpha}$)) in bone marrow cells. Furthermore, nLp-nF1 enhanced the production of splenic cytokines such as IL-12, TNF-${\alpha}$, and interferon gamma (IFN-${\gamma}$). In vitro, nLp-nF1 stimulated the immune response by enhancing the production of cytokines such as IL-12, TNF-${\alpha}$, and IFN-${\gamma}$. Moreover, nLp-nF1 given a food additive enhanced the immune responses when combined with various food materials in vitro. These results suggest that nLp-nF1 could be used to strengthen the immune system and recover normal immunity in people with a weak immune system, such as children, the elderly, and patients.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.19 no.1
• /
• pp.6-10
• /
• 2009

In this paper, a selective area growth (SAG) of a GaN/AlGaN double heterostructure (DH) has been performed on r-plane sapphire substrate by using the mixed-source hydride vapor phase epitaxy (HVPE) with multi-sliding boat system. The SAG-GaN/AlGaN DH consists of GaN buffer layer, Te-doped AlGaN n-cladding layer, GaN active layer, Mg-doped AlGaN p-cladding layer, and Mg-doped GaN p-capping layer. The electroluminescence (EL) characteristics show an emission peak of wavelength, 439 nm with a full width at half maximum (FWHM) of approximately 0.64 eV at 20 mA. The I-V measurements show that the turn-on voltage of the SAG-GaN/AlGaN DH is 3.4 V at room temperature. We found that the mixed-source HVPE method with a multi-sliding boat system was one of promising growth methods for III-Nitride LEDs.

• Bulletin of the Korean Chemical Society
• /
• v.15 no.8
• /
• pp.669-673
• /
• 1994

Coordination isomers of cis-(N-N)Pt(Glu) prepared by reaction of cis-(N-N)Pt($SO_4$) (N-N=2$NH_3$, ethylenediamine(en),(R,R)-1,2-diaminocyclohexane (DACH), N,N,N',N'-tetramethylethylenediamine (TMEDA)) with barium glutamate in water have been monitored and characterized by $^1H-NMR$, $^{13}C-NMR$, IR, and mass spectra. The reaction at room temperature affords the mixture of O,O'-and N, ${\alpha}$ O-chelated platinum(II) complexes. The O,O'-chelate initially formed isomerized to N,${\alpha}$O-chelate on standing for a long time or increasing temperature. The ratio of the two isomers at room temperature depends on the nature of the nitrogen donor coligand (N-N).

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.46 no.4
• /
• pp.10-14
• /
• 2009

We propose a trapezoidal gate AlGaN/GaN high electron mobility transistor(HEMT) to improve the breakdown voltage characteristics and its feasibility is investigated by two-dimensional device simulations. The use of a trapezoidal gate structure appears to be quite effective in dispersing the electric fields concentrated near the gate edge on the drain side from the simulation result. We find that a peak value of the electric field along the 2-DEG channel is reduced by 30%, from 4.8 to 3.5 MV/cm and thereby, the breakdown voltage(Vbr) of the proposed AlGaN/GaN HEMT is increased by about 40%, from 49 to 69 V, compared to those of the standard AlGaN/GaN HEMT.

• Journal of Species Research
• /
• v.7 no.4
• /
• pp.251-290
• /
• 2018

A new genus and 28 new species are described: Collis n. gen. (type species Collis flavus n. sp.), Pholcus jindongensis n. sp., Pholcus piagolensis n. sp., Pholcus pyeongchangensis n. sp., Pholcus seorakensis n. sp., Pholcus uiseongensis n. sp., Octonoba bicornuta n. sp., Cnephalocotes ferrugineus n. sp., Diplocephaloides falcatus n. sp., Metopobactrus cornis n. sp., Pelecopsis bigibba n. sp., Pelecopsis brunea n. sp., Pelecopsis montana n. sp., Tapinocyba parva n. sp., Tapinocyba subula n. sp., Walckenaeria supercilia n. sp., Agyneta furcula n. sp., Arcuphantes chiakensis n. sp., Arcuphantes chilboensis n. sp., Arcuphantes longiconvolutus n. sp., Arcuphantes namweonensis n. sp., Arcuphantes pennatoides n. sp., Arcuphantes pyeongchangensis n. sp., Collis pusillus n. sp., Collis silvaticus n. sp., Doenitzius minutus n. sp., Nippononeta bituberculata n. sp., and Phrurolithus pennatoides n. sp. Seven species are new to Korea: Hylyphantes nigritus (Simon, 1881), Hypselistes australis Saito and Ono, 2001, Diplostyla concolor (Wider, 1834), Agyneta insulana Tanasevitch, 2000, Phoroncidia altiventris Yoshida, 1985, Theridula iriomotensis Yoshida, 2001, and Xysticus audax (Schrank, 1803).

• Journal of Ceramic Processing Research
• /
• v.13 no.spc1
• /
• pp.128-131
• /
• 2012

The selective area growth light emitting diode on GaN substrate was grown using mixed-source HVPE method with multi-sliding boat system. The GaN substrate was grown using mixed-source HVPE system. Te-doped AlGaN/AlGaN/Mg-doped AlGaN/Mg-doped GaN multi-layers were grown on the GaN substrate. The appearance of epi-layers and the thickness of the DH was evaluated by SEM measurement. The DH metallization was performed by e-beam evaporator. n-type metal and p-type metal were evaporated Ti/Al and Ni/Au, respectively. At the I-V measurement, the turn-on voltage is 3 V and the differential resistance is 13 Ω. It was found that the SAG-LED grown on GaN substrate using mixed-source HVPE method with multi-sliding boat system could be applied for developing high quality LEDs.